Structure and magnetic properties of Ni50Mn35In15 thin film

Thin film of Ni50Mn35In15 Heusler alloy was prepared on Mg O(001) substrate by epitaxial growth in an ultra-high vacuum(UHV) chamber by a Pulsed Laser Deposition(PLD) method. The epitaxial growth process was monitored by in situ reflection high energy electron diffraction(RHEED) and the structure of the film was checked by ex situ X-ray diffraction(XRD), which indicates that high quality Ni50Mn35In15 single crystal film with a face-centered-cubic(fcc) structure could be stabilized on Mg O(001). Magnetic property measurement was also conducted at various temperatures by using physical property measurement system(PPMS). A significant exchange bias was observed for Ni50Mn35In15 film,and the strength of the exchange bias field(HEB) increases with the decrease of temperature. Such a behavior can be ascribed to the fact that the interfacial spin interaction between ferromagnetic(FM) and antiferromagnetic(AFM) cluster is enhanced with the decrease of temperature.     

钙钛矿La0.67Pb0.33MnO3薄膜的制备及表征

利用磁控溅射法在单晶LaAlO3(100)衬底上成功的外延生长了La0.67Pb0.33MnO3薄膜。用X射线衍射、原子力和超导量子干涉仪、振动样品磁强计对其进行了表征。结果表明,薄膜为赝立方钙钛矿结构,晶胞参数为a=3.861 nm,具有良好的单晶外延结构和光滑的表面。居里温度TC=345 K,在居里温度附近,发生铁磁-顺磁转变。此材料呈现出一种典型的自旋玻璃特性,是由于应力造成的。在室温条件下,当H=0.8T时,磁电阻效应非常明显,此现象是由于固有磁电阻效应引起的,并不是低场磁电阻效应引起的。室温下,其矫顽力只有50奥斯特。     

In-vitro assessments of micro arc oxidized ceramic films on AZ31 magnesium implant : Degradation and cell-surface response

In this research,phosphate and silicate based ceramic flms were synthesized via micro arc oxidation(MAO) method on the surface of the magnesium alloy.With the aim of orthopedic application of these coatings,corrosion behavior of them was investigated by potentiodynamic polarization and electrochemical impedance spectroscopy in simulated body fuid(SBF) environment.The results indicated better corrosion resistance of the phosphate flm compared to the silicate flm.Moreover,based on immersion tests,less pH and weight changes were obtained for the phosphate coating.Osteosarchoma(G292) Cell response of the coated specimens showed better cell morphology on the surface of the phosphate flm than silicate flm after 6 and 24 h of culture.This was related to the more surface roughness and less degradation rate of the phosphate flm compared with silicate coating.     

Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions

Magnetic tunnel junctions (MTJs), as the seminal spintronic devices, are expected for applications in magnetoresistive sensors due to their large magnetoresistance (MR) and high field sensitivity. Two hybrid Co/insulator/ZnO:Co junctions were fabricated with two different barriers to investigate the magneto-transport properties. Experimental results indicate that, both Co/MgO/ZnO:Co and Co/ZnO/ZnO:Co junctions show the positive and nearly linear MR, and their tunnel magnetoresistances (TMR) are 21.8% and 13.6%, respectively, when the current is applied perpendicular to the film plane under the magnetic field of 2 T at 4 K. The nonlinearity of MR is less than 1% within the magnetic field (H) of 1 kOe < H < 12 kOe at low temperature, making them attractive as magnetoresistive sensors. The higher MR of Co/MgO/ZnO:Co junctions is due to the superior spin filtering effect and larger effective barrier height of the MgO barrier. This linear MR characteristic of Co/insulator/ZnO:Co structures shows a promising future on the applications of diluted magnetic semiconductors in magnetoresistive sensors.     

正极材料Li(Ni1/3Co1/3Mn1/3)1-xCrxO2的合成与表征

采用草酸盐共沉淀法合成一系列的Li(Ni_1/3Co_1/3Mn_1/3)_1-xCr_xO₂正极材料(0 ≤x ≤0.1),用X射线衍射仪（XRD）和扫描电子显微镜（SEM）分析合成产物的晶体结构及表面形貌;利用充放电仪测定了产物的电化学性能.结果表明,合成的Li(Ni_1/3Co_1/3Mn_1/3)_1-xCr_xO₂( x = 0.01,0.03,0.05,0.07) 均保持α-2NaFeO₂ 层状结构相,属于空间R3m点群.Li(Ni_1/3Co_1/3Mn_1/3)_0.95Cr_0.05O₂的电化学性能最佳,首次放电容量达158.6 mAh/g,在2.5～4.5 V区间30次循环后比容量衰竭率仅为3.92%.Li(Ni_1/3Co_1/3Mn_1/3)_0.95Cr_0.05O₂和Li(Ni_1/3Co_1/3Mn_1/3)CrO₂ 的电极阻抗变化不同,进而影响其电化学性能.     

Magnetoresistance of the thin film ferromagnetic nanoconstrictions

The magnetoresistance and I-V characteristics at different temperatures of the thin film ferromagnetic nanoconstrictions of variable width (from 20 to 250 nm) and 10 nm thicknesses, fabricated by electron beam lithography and vacuum thin film deposition are compared. The magnetoresistance and resistance of the thin film ferromagnetic nanoconstrictions are not related to the width of the nanoconstrictions. Instead the resistance of the local nano-region in the middle of the thin film ferromagnetic nanoconstriction has only a minor role compared to that of the two microscale thin film ferromagnetic electrodes, which contribute the majority of the measured resistance. The magnetoresistances of the thin film ferromagnetic nanoconstrictions and a 0.2 cm × 0.8 cm thin ferromagnetic film deposited under the same conditions were also compared; the thin film ferromagnetic nanoconstrictions have higher magnetoresistances than the thin ferromagnetic film, which implies that the measured magnetoresistance of the thin film ferromagnetic nanoconstrictions comes mainly from the local nano-region in their centers. In conclusion, the measured magnetoresistance of the whole sample is similar to the anisotropic magnetoresistance, because the resistance of the two microscale thin film ferromagnetic electrodes is much higher than that of the local nano-region in the middle of the samples. Comparing the experimental results for the thin film ferromagnetic nanoconstrictions and the thin ferromagnetic film reveals that the magnetoresistance of the local nano-region in the middle of the sample is much higher than that of the two microscale thin film ferromagnetic electrodes attached to it.     

Ni50.3Mn27.3Ga22.4磁性形状记忆合金薄膜的磁性能研究

采用磁控溅射方法制备Ni50.3Mn27.3Ga22.4磁性形状记忆合金薄膜。系统研究薄膜的马氏体相变行为、磁场增强相变应变特性以及温度对磁感生应变的影响。试验结果表明,经823 K退火1 h的Ni50.3Mn27.3Ga22.4薄膜室温下处于奥氏体态,马氏体相变开始温度为271.5 K。当沿膜面方向施加0—0.8 T磁场时,Ni50.3Mn27.3Ga22.4薄膜的马氏体相变应变量随磁场强度的增大而增大,呈现出磁场增强马氏体相变应变效应。试验还发现,饱和磁感生应变显著依赖于测试温度。当测试温度低于拟马氏体相变结束温度时,饱和磁感生应变随温度的升高先缓慢增大,在马氏体相变开始温度附近磁感生应变值发生跳跃式增加,然后随测试温度的进一步升高而降低。     

热处理对Ta/Ni0.65Co0.35薄膜微结构和磁电阻性能的影响

选用磁致伸缩系数接近于零的软磁合金Ta/Ni0.65Co0.35作为磁敏感层,研究了热处理对Ta/Ni0.65Co0.35薄膜织构、磁学性能和磁电阻性能的影响.制备了Barber电极结构的磁电阻元件,对磁电阻元件的输出特性进行了测试.结果表明:真空退火可以有效降低薄膜内的应力和杂质缺陷,使晶粒尺寸增大,晶界对传导电子的散射减少,各向异性磁电阻(AMR)值提高;真空磁场退火有利于提高薄膜的单轴各向异性,使薄膜的AMR值和磁传感器元件的灵敏度增加.     

Experimental measurement of the electrical conductivity of single crystal olivine at high temperature and high pressure under different oxygen fugacities

At 1.0?4.0 GPa and 1123?1473 K and under oxygen fugacity-controlled conditions (Ni+NiO, Fe+Fe₃O₄, Fe+FeO and Mo+MoO₂ buffers), a YJ-3000t Model six-anvil solid high-pressure apparatus and a Sarltron-1260 Impedance/Gain-Phase analyzer were employed to conduct an in situ measurement of the electrical conductivity of single crystal olivine. Experimental results showed that: (1) within the range of experimentally selected frequencies (10³?10⁶ Hz), the electrical conductivity of the sample is of great dependence on the frequency; (2) with the rise of temperature (T), the electrical conductivity (σ) will increase, and the Arrenhius linear relationship is established between lgσ and 1/T; (3) under the control of oxygen buffer Fe+Fe₃O₄, with the rise of pressure, the electrical conductivity tends to decrease whereas the activation enthalpy and independent-of-temperature preexponential factor tend to increase, with the activation energy and activation volume of the sample estimated at (1.25±0.08) eV and (0.105±0.025) cm³/mol, respectively; (4) under given pressure and temperature conditions, the electrical conductivity tends to increase whereas the activation energy tends to decrease with increasing oxygen fugacity; and (5) the mechanism of electrical conduction of small polarons can provide insight into the behavior of electrical conduction of olivine under high pressure and high temperature.     

Ni50.3Mn27.3Ga22.4磁性形状记忆合金薄膜的磁场增强马氏体相变应变研究

采用磁控溅射方法制备Ni50.3Mn27.3Ga22.4磁性形状记忆合金薄膜。研究薄膜的晶体结构、磁化行为以及磁场对马氏体相变应变的影响。试验结果表明,经823 K退火1 h的Ni50.3Mn27.3Ga22.4薄膜,室温下处于奥氏体态,呈较强的(110)织构特性,且室温饱和磁化强度约为40 emμ/g。试验还发现,当沿膜面方向施加0到0.8 T磁场时,Ni50.3Mn27.3Ga22.4薄膜的马氏体相变应变量随磁场强度的增大而增大,呈现出磁场增强马氏体相变应变效应。     

双掺杂钙钛矿型复合氧化物La_(0.7)Sr_(0.3)Co_(1-x)M_xO_3的电性能研究

以开发新型激光器阴极材料和固体氧化物燃料电池阴极材料为目的 ,合成一系列钙钛矿型复合氧化物 La0 .7Sr0 .3 Co1- x Mx O3 ( M:过渡族金属元素 ) ,并对 Co位掺杂过渡族元素后样品的高温电阻率和热电动势进行研究 ,发现 Co位掺杂不同元素显著影响材料的电导率和导电类型 ,并对其相应的物理机制进行探讨 .     

不同锂源对富锂锰基Li1.133Mn0.466Ni0.2Co0.2O2正极材料性能的影响研究

采用共沉淀的方法将含有一定比例的镍、钴、锰的金属醋酸盐溶液均匀混合,然后加入适当的沉淀剂Na2CO3制备前驱体Mn0.466Ni0.2Co0.2CO3,最后分别与不同锂源（Li2CO3、LiOH）混合煅烧得到富锂锰基Li1.133Mn0.466Ni0.2Co0.2O2正极材料。采用XRD和SEM分别对不同锂源制备的Li1.133Mn0.466Ni0.2Co0.2O2的结构和表面形貌进行表征,采用恒电流充放电和循环伏安法测试对不同锂源制备的Li1.133Mn0.466Ni0.2Co0.2O2的电化学性能进行测试。结果表明,以LiOH为锂源合成的样品在0.1C倍率下首次充、放电比容量分别为330.1mAh/g和218.6mAh/g,首次库仑效率为66.23%,在1C倍率内表现为优秀的稳定循环比容量特性,但是在2C以及2C以上高倍率循环稳定性不及以Li2CO3为锂源合成的样品性能。     

不同衬底温度下制备的Co-Al-O介质颗粒薄膜的巨磁电阻效应

利用射频反应溅射的方法在不同衬底温度（Ｔｓ）下制备了Ｃｏ－Ａｌ－Ｏ介质颗粒薄膜。薄膜的本征电阻及磁电阻值密切依赖于薄膜制备过程中的衬底温度。通过原子力显微镜对样品表面的观察发现：以Ｃｏ为基的纳米磁性颗粒的尺寸随Ｔｓ的增加而变大,并且颗粒之间由完全初介质分离逐渐变化到互相连接．对应这种结构上的变化,薄膜的电导机制由隧道效应向金属性电导转变,相应地薄膜的磁电阻值也发生了变化。     

Cu低掺杂对La0.7Ca0.3MnO3电阻及磁电阻的影响

用溶胶凝胶法制备了Cu低掺杂的La0.7Ca0.3Mn1-xCuxO3(x=0%,1%,2%,3%,4%,5%)系列多晶材料.采用振动样品磁强计测量了系列样品的热磁曲线并获得了相应的居里温度,实验结果表明居里温度随着Cu掺杂量的增加而减少.在77~350 K温度范围内测量了样品的电阻和磁电阻,结果表明样品电阻率与温度的关系均具有明显的电阻峰结构.当x=5%时,开始出现双电阻峰结构;掺杂量x为1%,2%,3%,5%的样品在外场为0.4 T时存在较大的磁电阻极大值,分别为30.5%,25.4%,22.4%,18.8%,均大于未掺杂(x=0%)的13.5%.双交换(DE)模型简单地解释了Cu低掺杂对电阻及磁电阻行为的影响.     

Ta种子层厚度及溅射速率对Ta/Ni65Co35双层膜各向异性磁电阻和矫顽力的影响

研究了Ta种子层的厚度、溅射速率对Ta/Ni65Co35双层膜各向异性磁电阻值(△p/p)、矫顽力和织构的影响.研究表明,适当的Ta层厚度和较高的Ta层溅射速率对提高Ta/Ni65Co35双层膜的△p/p是有效的.Ta种子层的使用增大了Ta/Ni65Co35双层膜的矫顽力而其溅射速率对Ta/Ni65Co35双层膜矫顽力的影响很小.     

多边形结构富锂锰基正极材料的可控制备及性能

本文通过水热合成法成功制备了一种富锂Li1.166(Mn0.6Ni0.2Co0.2)0.834O2正极材料。并通过X射线衍射（XRD）、扫描电子显微镜（SEM）和高精度电池测试系统分别对电极材料的结构、形貌和电化学性能进行了相应的表征和测试分析.结果表明,样品Li1.166(Mn0.6Ni0.2Co0.2)0.834O2具有较好的多面体结构特点以及优异的电化学性能,该电极材料相对于商用LiCoO2材料（约135mAh g?1）具有更高的充放电比容量,其值分别为363.8 mAh g?1 和 222.2 mAh g?1,首次库仑效率为61.1%.循环100周之后可逆放电比容量仍然可以达到235.5 mAh g?1.该富锂Li1.166(Mn0.6Ni0.2Co0.2)0.834O2正极材料在高能量密度动力电池发展中具有良好的应用前景和广阔的市场空间.     

Fe,Co,Ni/MgO对氨还原SO_2到单质硫的催化性能

采用固定床流动反应装置研究了高温焙烧的负载型催化剂 Me/ Mg O(Me为 Fe,Co,Ni)对氨还原 SO2 到单质硫反应的催化性能 ,活性评价结果表明 ,Fe/ Mg O催化剂对该反应SO2 的转化率 C%和生成硫的产率 Y%都明显高于其它两种催化剂 .TPR、XRD结果表明 ,催化剂的活性大小与其还原行为及载体表面和活性组分的相互作用密切相关 ;Co/ Mg O和 Ni/Mg O催化剂在反应前后都有新物相 (Co,Mg) O和 Mg Ni O2 固溶体形成 .     

Investigation on the electrochemical activation process of Li1.20Ni 0.32Co0.004Mn0.476O2

The lithium-rich layered oxides are one of the most attractive cathode materials for lithium-ion batteries.Here,two types of Li1.20Ni0.32Co0.004Mn0.476O2 were synthesized using Li2CO3 and LiOH as lithium sources.An electrochemical activation process occurs in Li1.2Ni0.32Co0.004Mn0.476O2 prepared from Li2CO3(LLO-1),while no obvious activation in Li1.2Ni0.32Co0.004Mn0.476O2 prepared from LiOH(LLO-2) is observed.Via advanced scanning transmission electron microscopy(STEM),we found that Li2MnO3-like structure is rich in the surface region of LLO-2.The study provides a direct explanation for the electrochemical activation of lithium-rich materials.The sample with more LiMO2-like phase at the surface region shows a better cycling performance.It is likely that more LiMO2-like phase at the surface region could stabilize the interface and improve the cycling performance of the Li-rich cathode materials.     

Ca和Ba掺杂对La4/3Sr5/3Mn2O7的磁电阻效应的影响

用溶胶-凝胶法制备了双层钙钛矿锰氧化物La4/3(Sr1-xAx)5/3Mn2O7 (A是Ca或者Ba,x=0,0.1,0.2)系列多晶样品,并对其结构及电、磁输运性质进行了研究.研究结果表明:Ca和Ba的掺入虽然导致绝缘体-金属(I-M)转变温度(TI-M)降低,但可以明显提高低温区的磁电阻效应.对于x=0.2的Ca或Ba掺杂的样品,在60 K以下,磁电阻值接近100 %,且为一恒定值.对于这一实验结果可以作如下解释:Ca或Ba掺杂引起了MnO6八面体的畸变,导致eg电子占据dx2-y2轨道和d3z2-r2轨道的状态偏离了x=0时的优化组合状态,铁磁性被削弱.     

热处理及厚度对Co90Fe10薄膜磁电阻的影响

利用电子束真空蒸发方法制备了不同厚度的Co90Fe10磁性薄膜,研究了热处理及厚度对薄膜磁电阻的影响。利用四探针法测量了薄膜的磁电阻,利用磁力显微镜观察了薄膜的磁畴结构。结果表明:热处理可以提高薄膜的磁电阻,尤其是厚度较小的样品,效果更加明显。对于厚度较大的薄膜,热处理可以改善磁织构,磁畴分布更加有序,出现了类巨磁电阻特征。