Orbital Kondo effect in carbon nanotubes

Progress in the fabrication of nanometre-scale electronic devices is opening new opportunities to uncover deeper aspects of the Kondo effect--a characteristic phenomenon in the physics of strongly correlated electrons. Artificial single-impurity Kondo systems have been realized in various nanostructures, including semiconductor quantum dots, carbon nanotubes and individual molecules. The Kondo effect is usually regarded as a spin-related phenomenon, namely the coherent exchange of the spin between a localized state and a Fermi sea of delocalized electrons. In principle, however, the role of the spin could be replaced by other degrees of freedom, such as an orbital quantum number. Here we show that the unique electronic structure of carbon nanotubes enables the observation of a purely orbital Kondo effect. We use a magnetic field to tune spin-polarized states into orbital degeneracy and conclude that the orbital quantum number is conserved during tunnelling. When orbital and spin degeneracies are present simultaneously, we observe a strongly enhanced Kondo effect, with a multiple splitting of the Kondo resonance at finite field and predicted to obey a so-called SU4 symmetry.     

Determination of electron orbital magnetic moments in carbon nanotubes

The remarkable transport properties of carbon nanotubes (CNTs) are determined by their unusual electronic structure. The electronic states of a carbon nanotube form one-dimensional electron and hole sub-bands, which, in general, are separated by an energy gap. States near the energy gap are predicted to have an orbital magnetic moment, mu(orb), that is much larger than the Bohr magneton (the magnetic moment of an electron due to its spin). This large moment is due to the motion of electrons around the circumference of the nanotube, and is thought to play a role in the magnetic susceptibility of CNTs and the magnetoresistance observed in large multiwalled CNTs. But the coupling between magnetic field and the electronic states of individual nanotubes remains to be quantified experimentally. Here we report electrical measurements of relatively small diameter (2-5 nm) individual CNTs in the presence of an axial magnetic field. We observe field-induced energy shifts of electronic states and the associated changes in sub-band structure, which enable us to confirm quantitatively the predicted values for mu(orb).     

Triplet-singlet spin relaxation via nuclei in a double quantum dot

The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the electron spin to its orbital motion or to nuclear spins. Relaxation of confined electron spin has been previously measured only for Zeeman or exchange split spin states, where spin-orbit effects dominate relaxation; spin flips due to nuclei have been observed in optical spectroscopy studies. Using an isolated GaAs double quantum dot defined by electrostatic gates and direct time domain measurements, we investigate in detail spin relaxation for arbitrary splitting of spin states. Here we show that electron spin flips are dominated by nuclear interactions and are slowed by several orders of magnitude when a magnetic field of a few millitesla is applied. These results have significant implications for spin-based information processing.     

Nanomechanical oscillations in a single-C60 transistor

The motion of electrons through quantum dots is strongly modified by single-electron charging and the quantization of energy levels. Much effort has been directed towards extending studies of electron transport to chemical nanostructures, including molecules, nanocrystals and nanotubes. Here we report the fabrication of single-molecule transistors based on individual C60 molecules connected to gold electrodes. We perform transport measurements that provide evidence for a coupling between the centre-of-mass motion of the C60 molecules and single-electron hopping--a conduction mechanism that has not been observed previously in quantum dot studies. The coupling is manifest as quantized nano-mechanical oscillations of the C60 molecule against the gold surface, with a frequency of about 1.2 THz. This value is in good agreement with a simple theoretical estimate based on van der Waals and electrostatic interactions between C60 molecules and gold electrodes.     

Electronic read-out of a single nuclear spin using a molecular spin transistor

Quantum control of individual spins in condensed-matter devices is an emerging field with a wide range of applications, from nanospintronics to quantum computing. The electron, possessing spin and orbital degrees of freedom, is conventionally used as the carrier of quantum information in proposed devices. However, electrons couple strongly to the environment, and so have very short relaxation and coherence times. It is therefore extremely difficult to achieve quantum coherence and stable entanglement of electron spins. Alternative concepts propose nuclear spins as the building blocks for quantum computing, because such spins are extremely well isolated from the environment and less prone to decoherence. However, weak coupling comes at a price: it remains challenging to address and manipulate individual nuclear spins. Here we show that the nuclear spin of an individual metal atom embedded in a single-molecule magnet can be read out electronically. The observed long lifetimes (tens of seconds) and relaxation characteristics of nuclear spin at the single-atom scale open the way to a completely new world of devices in which quantum logic may be implemented.     

Fabry - Perot interference in a nanotube electron waveguide

The behaviour of traditional electronic devices can be understood in terms of the classical diffusive motion of electrons. As the size of a device becomes comparable to the electron coherence length, however, quantum interference between electron waves becomes increasingly important, leading to dramatic changes in device properties. This classical-to-quantum transition in device behaviour suggests the possibility for nanometer-sized electronic elements that make use of quantum coherence. Molecular electronic devices are promising candidates for realizing such device elements because the electronic motion in molecules is inherently quantum mechanical and it can be modified by well defined chemistry. Here we describe an example of a coherent molecular electronic device whose behaviour is explicitly dependent on quantum interference between propagating electron waves-a Fabry-Perot electron resonator based on individual single-walled carbon nanotubes with near-perfect ohmic contacts to electrodes. In these devices, the nanotubes act as coherent electron waveguides, with the resonant cavity formed between the two nanotube-electrode interfaces. We use a theoretical model based on the multichannel Landauer-Büttiker formalism to analyse the device characteristics and find that coupling between the two propagating modes of the nanotubes caused by electron scattering at the nanotube-electrode interfaces is important.     

Spin-orbital separation in the quasi-one-dimensional Mott insulator Sr2CuO3

When viewed as an elementary particle, the electron has spin and charge. When binding to the atomic nucleus, it also acquires an angular momentum quantum number corresponding to the quantized atomic orbital it occupies. Even if electrons in solids form bands and delocalize from the nuclei, in Mott insulators they retain their three fundamental quantum numbers: spin, charge and orbital. The hallmark of one-dimensional physics is a breaking up of the elementary electron into its separate degrees of freedom. The separation of the electron into independent quasi-particles that carry either spin (spinons) or charge (holons) was first observed fifteen years ago. Here we report observation of the separation of the orbital degree of freedom (orbiton) using resonant inelastic X-ray scattering on the one-dimensional Mott insulator Sr2CuO3. We resolve an orbiton separating itself from spinons and propagating through the lattice as a distinct quasi-particle with a substantial dispersion in energy over momentum, of about 0.2 electronvolts, over nearly one Brillouin zone.     

Allowed and forbidden transitions in artificial hydrogen and helium atoms

The strength of radiative transitions in atoms is governed by selection rules that depend on the occupation of atomic orbitals with electrons. Experiments have shown similar electron occupation of the quantized energy levels in semiconductor quantum dots--often described as artificial atoms. But unlike real atoms, the confinement potential of quantum dots is anisotropic, and the electrons can easily couple with phonons of the material. Here we report electrical pump-and-probe experiments that probe the allowed and 'forbidden' transitions between energy levels under phonon emission in quantum dots with one or two electrons (artificial hydrogen and helium atoms). The forbidden transitions are in fact allowed by higher-order processes where electrons flip their spin. We find that the relaxation time is about 200 micro s for forbidden transitions, 4 to 5 orders of magnitude longer than for allowed transitions. This indicates that the spin degree of freedom is well separated from the orbital degree of freedom, and that the total spin in the quantum dots is an excellent quantum number. This is an encouraging result for potential applications of quantum dots as basic entities for spin-based quantum information storage.     

Optical pumping of a single hole spin in a quantum dot

The spin of an electron is a natural two-level system for realizing a quantum bit in the solid state. For an electron trapped in a semiconductor quantum dot, strong quantum confinement highly suppresses the detrimental effect of phonon-related spin relaxation. However, this advantage is offset by the hyperfine interaction between the electron spin and the 10(4) to 10(6) spins of the host nuclei in the quantum dot. Random fluctuations in the nuclear spin ensemble lead to fast spin decoherence in about ten nanoseconds. Spin-echo techniques have been used to mitigate the hyperfine interaction, but completely cancelling the effect is more attractive. In principle, polarizing all the nuclear spins can achieve this but is very difficult to realize in practice. Exploring materials with zero-spin nuclei is another option, and carbon nanotubes, graphene quantum dots and silicon have been proposed. An alternative is to use a semiconductor hole. Unlike an electron, a valence hole in a quantum dot has an atomic p orbital which conveniently goes to zero at the location of all the nuclei, massively suppressing the interaction with the nuclear spins. Furthermore, in a quantum dot with strong strain and strong quantization, the heavy hole with spin-3/2 behaves as a spin-1/2 system and spin decoherence mechanisms are weak. We demonstrate here high fidelity (about 99 per cent) initialization of a single hole spin confined to a self-assembled quantum dot by optical pumping. Our scheme works even at zero magnetic field, demonstrating a negligible hole spin hyperfine interaction. We determine a hole spin relaxation time at low field of about one millisecond. These results suggest a route to the realization of solid-state quantum networks that can intra-convert the spin state with the polarization of a photon.     

自旋对表面磁极化子自陷能磁场特性的影响

讨论了电子自旋对表面磁极化子特性的影响.应用么正变换、线性组合算符和微扰法研究了电子自旋对电子与表面光学声子耦合强、与体纵光学声子耦合弱的表面磁极化子自陷能Etr磁场特性的影响.以TlB r晶体为例所作的数值计算结果表明:电子自旋使Etr分裂为二,且随磁场B的加强,分裂间距增大;若电子与光学声子耦合强,自旋量子数mS取-1/2时,Etr随B的加强而增大,mS取1/2时Etr随B的加强而减少;若电子与光学声子耦合弱,不论mS取何值,Etr都随B的加强而减少;不论电子与光学声子耦合强还是弱,电子自旋作用对Etr的影响都随B的加强而增大.     

Magnetic trapping of rare-earth atoms at millikelvin temperatures

The ability to create quantum degenerate gases has led to the realization of Bose-Einstein condensation of molecules, atom-atom entanglement and the accurate measurement of the Casimir force in atom-surface interactions. With a few exceptions, the achievement of quantum degeneracy relies on evaporative cooling of magnetically trapped atoms to ultracold temperatures. Magnetic traps confine atoms whose electronic magnetic moments are aligned anti-parallel to the magnetic field. This alignment must be preserved during the collisional thermalization of the atomic cloud. Quantum degeneracy has been reached in spherically symmetric, S-state atoms (atoms with zero internal orbital angular momentum). However, collisional relaxation of the atomic magnetic moments of non-S-state atoms (non-spherical atoms with non-zero internal orbital angular momentum) is thought to proceed rapidly. Here we demonstrate magnetic trapping of non-S-state rare-earth atoms, observing a suppression of the interaction anisotropy in collisions. The atoms behave effectively like S-state atoms because their unpaired electrons are shielded by two outer filled electronic shells that are spherically symmetric. Our results are promising for the creation of quantum degenerate gases with non-S-state atoms, and may facilitate the search for time variation of fundamental constants and the development of a quantum computer with highly magnetic atoms.     

Coherent spin manipulation without magnetic fields in strained semiconductors

A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be coupled; this is known as spin-orbit coupling. Such an interaction opens a pathway to the manipulation of electron spins within non-magnetic semiconductors, in the absence of applied magnetic fields. This interaction has implications for spin-based quantum information processing and spintronics, forming the basis of various device proposals. For example, the concept of spin field-effect transistors is based on spin precession due to the spin-orbit coupling. Most studies, however, focus on non-spin-selective electrical measurements in quantum structures. Here we report the direct measurement of coherent electron spin precession in zero magnetic field as the electrons drift in response to an applied electric field. We use ultrafast optical techniques to spatiotemporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial layers. Unexpectedly, we observe spin splitting in these simple structures arising from strain in the semiconductor films. The observed effect provides a flexible approach for enabling electrical control over electron spins using strain engineering. Moreover, we exploit this strain-induced field to electrically drive spin resonance with Rabi frequencies of up to approximately 30 MHz.     

Crossover from 'mesoscopic' to 'universal' phase for electron transmission in quantum dots

The measurement of phase in coherent electron systems--that is, 'mesoscopic' systems such as quantum dots--can yield information about fundamental transport properties that is not readily apparent from conductance measurements. Phase measurements on relatively large quantum dots recently revealed that the phase evolution for electrons traversing the dots exhibits a 'universal' behaviour, independent of dot size, shape, and electron occupancy. Specifically, for quantum dots in the Coulomb blockade regime, the transmission phase increases monotonically by pi throughout each conductance peak; in the conductance valleys, the phase returns sharply to its starting value. The expected mesoscopic features in the phase evolution--related to the dot's shape, spin degeneracy or to exchange effects--have not been observed, and there is at present no satisfactory explanation for the observed universality in phase behaviour. Here we report the results of phase measurements on a series of small quantum dots, having occupancies of between only 1-20 electrons, where the phase behaviour for electron transmission should in principle be easier to interpret. In contrast to the universal behaviour observed thus far only in the larger dots, we see clear mesoscopic features in the phase measurements when the dot occupancy is less than approximately 10 electrons. As the occupancy increases, the manner of phase evolution changes and universal behaviour is recovered for some 14 electrons or more. The identification of a transition from the expected mesoscopic behaviour to universal phase evolution should help to direct and constrain theoretical models for the latter.     

（SO＋2O）／Cu（100）NEXAFS谱反常共振峰结构的研究

利用多重散射团簇（MSC）方法对（SO＋2O）／Cu(100)的硫1s和氧1s近边X射线表细结构（NEXAFS）谱的理论分析和利用DV－Xα方法对该系统的团簇电子结构研究,揭示了该系统NEXAFS谱反常共振结构的物理起源,SO和衬底的相互作用使π分裂为二个轨道方向相互垂直的π与衬底的耦合态,NEXAFS谱的反常共振结构对应于1S电子跃迁到这二个π与衬底的耦合态。     

Kondo resonance in a single-molecule transistor

When an individual molecule, nanocrystal, nanotube or lithographically defined quantum dot is attached to metallic electrodes via tunnel barriers, electron transport is dominated by single-electron charging and energy-level quantization. As the coupling to the electrodes increases, higher-order tunnelling and correlated electron motion give rise to new phenomena, including the Kondo resonance. To date, all of the studies of Kondo phenomena in quantum dots have been performed on systems where precise control over the spin degrees of freedom is difficult. Molecules incorporating transition-metal atoms provide powerful new systems in this regard, because the spin and orbital degrees of freedom can be controlled through well-defined chemistry. Here we report the observation of the Kondo effect in single-molecule transistors, where an individual divanadium molecule serves as a spin impurity. We find that the Kondo resonance can be tuned reversibly using the gate voltage to alter the charge and spin state of the molecule. The resonance persists at temperatures up to 30 K and when the energy separation between the molecular state and the Fermi level of the metal exceeds 100 meV.     

双势垒磁性隧道结中电子的自旋极化输运

 采用相干量子输运理论和传递矩阵方法,数值计算了两端具有铁磁接触的双势垒异质结构(F/DB/F)中自旋相关的隧穿几率和自旋极化率。结果表明,隧穿几率和自旋极化率随阱宽的增加发生振荡周期不随垒厚变化的周期性振荡;Rashba自旋轨道耦合强度的增加加大了隧穿几率和自旋极化率的振荡频率;隧穿几率和自旋极化率的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角。与铁磁/半导体/铁磁（F/S/F）磁性隧道结中的结果相比,发现垒厚的增加增大了隧穿几率和自旋极化率的峰谷比,自旋极化率的取值明显增大,并具有自旋劈裂和自旋翻转现象出现。     

金属串配合物[CoMCo(dpa)4(NCS)2](M=Co,Ni,Pd,Pt)结构和自旋过滤性质研究

应用密度泛函理论B3LYP方法对金属串配合物[CoMCo(dpa)4(NCS)2](1:M=Co, 2:M=Ni, 3:M=Pd, 4:M=Pt; dpa=dipyridylamide)的成键性质和自旋过滤效应进行了研究,结果表明：配合物1的基态为二重态,Co36+金属链形成三中心三电子键(2nb1*0);而配合物2~4的基态均为反铁磁耦合单重态(AF态),对应的最低能量高自旋态(HS态)分别为三重态、七重态和七重态,单电子分布在两端Co原子上,[CoMCo]6+链具有三中心四电子键(2nb1*1)。由分子轨道能级图和PDOS图分析得到配合物1~4均具有自旋过滤效应,电子传输通道主要为-自旋nb轨道,与费米能级的距离大小为1234。电场作用下,1~4的高电势端Co2―N4键增长而低电势端Co3―N7键缩短,Co―M平均键长略为缩短,Co―M键增强;电场作用下金属原子的自旋密度和电荷密度变化很小,电磁性质稳定;电场作用下nb轨道分布仍保持沿金属轴方向离域,LUMO-HOMO能隙减小,有利于电子输运。     

Observation of the two-channel Kondo effect

Some of the most intriguing problems in solid-state physics arise when the motion of one electron dramatically affects the motion of surrounding electrons. Traditionally, such highly correlated electron systems have been studied mainly in materials with complex transition metal chemistry. Over the past decade, researchers have learned to confine one or a few electrons within a nanometre-scale semiconductor 'artificial atom', and to understand and control this simple system in detail(3). Here we combine artificial atoms to create a highly correlated electron system within a nano-engineered semiconductor structure. We tune the system in situ through a quantum phase transition between two distinct states, each a version of the Kondo state, in which a bound electron interacts with surrounding mobile electrons. The boundary between these competing Kondo states is a quantum critical point-namely, the exotic and previously elusive two-channel Kondo state, in which electrons in two reservoirs are entangled through their interaction with a single localized spin.     

Single-electron transistor of a single organic molecule with access to several redox states

A combination of classical Coulomb charging, electronic level spacings, spin, and vibrational modes determines the single-electron transfer reactions through nanoscale systems connected to external electrodes by tunnelling barriers. Coulomb charging effects have been shown to dominate such transport in semiconductor quantum dots, metallic and semiconducting nanoparticles, carbon nanotubes, and single molecules. Recently, transport has been shown to be also influenced by spin--through the Kondo effect--for both nanotubes and single molecules, as well as by vibrational fine structure. Here we describe a single-electron transistor where the electronic levels of a single pi-conjugated molecule in several distinct charged states control the transport properties. The molecular electronic levels extracted from the single-electron-transistor measurements are strongly perturbed compared to those of the molecule in solution, leading to a very significant reduction of the gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital. We suggest, and verify by simple model calculations, that this surprising effect could be caused by image charges generated in the source and drain electrodes resulting in a strong localization of the charges on the molecule.     

单壁磁性纳米管的自旋波谱

利用量子统计理论的多体格林函数方法计算了单壁磁性纳米管的自旋波的色散关系.Armchair型纳米管的自旋波谱只有一支,这一支有int(m/2+1)条色散曲线.当q1a+q2a=2π时,自旋波能量是简并的.当纳米管的管径m(亦即圆周方向上的格点数)一定时,自旋波能量曲线随温度的升高而降低.Zigzag型磁纳米管的自旋波谱分为两支:ω1支和ω2支.每一支都有m条色散曲线.当q1b+q2b=π时,自旋波能量是简并的.自旋波能量简并在物理上是由对称性所致.