10 Gbit/s可调谐全光波长转换器的实验研究

基于可调谐激光器和半导体光放大器中的交叉增益调制效应,实现了宽带可调谐全光波长转换器,采用单端耦合半导体光放大器改善波长转换的输出消光比特性.在10Gbit/s可调谐波长转换实验中,转换输出在1528~1563nm范围内可调,在适当条件下,可使在整个调谐范围内输出消光比大于10dB,转换效率大于0dB.该机制的波长转换在向上转换时能够得到较好的眼图,向下转换时眼图效果较差,噪声特性恶化明显.     

量子点半导体光放大器的自发辐射特性研究

从导带、价带和浸润层的能级跃迁出发,采用分段模型对量子点半导体光放大器的增益和自发辐射进行了数值研究．物理模型包括自发辐射行波方程和各能级栽流子与光子数速率方程．经过大量数值计算,得到基态电子占用概率随注入光脉冲的变化,以及增益动态过程（饱和与恢复）和输出光脉冲的时域波形畸变．进一步研究了量子点光放大器自发辐射谱和增益平坦性,结果表明自发辐射功率随输入信号功率增大而减小,引入合适的钳制光,可在20nm带宽内获得小于0．3dB的增益平坦度,或者40nm带宽内小于1．0dB．     

Theoretical analysis of ultra-fast phase recovery in semiconductor optical amplifiers

We present results from theoretical analysis of the phase dynamics in semiconductor optical amplifiers(SOAs).In particular,we focus on an aspect of the ultra-fast phase recovery that currently does not have adequate in-depth theoretical analysis and clear explanation of the physical mechanism.We build up a numerical model to analyze the ultra-fast phase recovery of semiconductor optical amplifiers in details.To investigate the phase response characteristics,we analyze the different contributions to the phase shift,including intra-band effects such as carrier heating,spectral hole burning,and inter-band effects such as carrier depletion.In addition,the impact of the pulses energy on phase shift is also investigated.Based on the analysis of phase response characteristics,we further explain the reason why a delay occurs between gain response and phase response.The analysis results are in good agreement with the reported experimental results.The results presented in this paper are useful for the SOA-based ultra-fast optical signal processing,such as optical switches,optical logic gates,and optical Add/Drop multiplexer.     

半导体光放大器中几种非线性效应关系研究

采用分段模型和琼斯矩阵方法,分析了半导体光放大器(SOA)中的交叉增益调制、交叉相位调制和交叉偏振调制这三种非线性效应之间的联系．结果证实了相位调制、偏振调制与增益压缩之间的正比关系,可以解释基于SOA交叉偏振调制和交叉增益调制波长转换的一些实验现象,对SOA的非线性应用具有指导意义．     

All-optical 2R regeneration based on self-induced polarization rotation in a single semiconductor optical amplifier

An all-optical 2R regeneration based on self-induced polarization rotation in a single semiconductor optical amplifier is presented. A theoretical model is built up to simulate the system performance. Experiment evidence is also provided. An extinction ratio improvement of 8.3 dB is obtained at a bit-rate of 10 Gbit/s. In the BER measurements, 6 dB improvement of the power penalty is achieved, clearly demonstrating the feasibility of the proposed scheme. Our approach has a simple structure, and allows photonic integration.