大鼠腹主动脉植入DSI血压监测植入子手术若干问题的探讨

长期遥测血压系统的应用是高血压动物实验研究的趋势,提高血压监测植入子植入手术的成功率是顺利获取实验动物血压、进行下一步实验的前提。本文拟对该手术中遇到的导致实验失败的问题进行分析并提出解决的方法,以期对相关研究者有所帮助。     

一台400keV离子注入机的光路设计

本文给出了一台400keV离子注入机的物理设计总体方案。根据设计指标,详细计算了该机主要部件的参数。经调试,各项指标达到设计要求。     

SD—400keV离子注入机调试报告

一、引言 SD—400keV离子注入机是一种多用途离子注入机,它具有注入元素种类多、能量调节范围广、扫描面积大等特点,可以注入从质量数为1的氢离子直到质量数大于200的重离子;能量从50keV到400keV连续可调;具有垂直扫描和非垂直扫描两种功能。本机主要用于功能材料、固体材料改性和功能器件的研究以及离子与固体相互作用的基础研究等领域。     

氮离子注入纤维素酶产生菌的诱变效应研究

作为一种新型的生物诱变手段,离子注入技术以其独特的诱变机理和显著的生物学效应受到关注,被广泛地应用于植物、微生物育种和转基因.本文应用低能离子注入技术对纤维素酶产生菌里氏木霉(Trichoderma reesei)进行诱变选育,研究低能N+注入对其存活率、菌体总抗氧化能力(T-AOC)、蛋白质含量以及产酶能力的影响.结果表明,低能N+注入对T.reesei的诱变效应显著,T.reesei经N+离子注入后存活率曲线呈现"双马鞍型",而菌体注量-总抗氧化能力曲线与注量-存活率曲线呈现一致的变化趋势.由此推测,离子注入微生物所诱导的总抗氧化能力的强弱变化很有可能决定微生物的存活情况.在注入剂量为250×1014N+/cm2的条件下得到突变幅度提高最多的菌株,CMCA活力较对照增加了24.3%.     

50型MEVVA源离子注入机

详细介绍了50型强束流、大束斑MEVVA源注入机的结构和各项性能.50型MEVVA源注入机是北京师范大学低能核物理研究所于九五期间承担的"八六三"计划项目"先进离子束注入技术的工业应用"所取得的成果,是专用于工业生产的MEVVA源离子注入机.     

Transferring gfp gene with ion implantation and transient expression of gfp in liliaceous pollen cells

Liliaceous pollen cells were implanted by 4.0 MeV C2+ ion beam or by 25.0 keV N+ ion beam. Laser confocal scanning microscopy (LCSM) of the implanted intact samples showed that parts of the implanted pollen cells could be stained by propidium iodide (PI). This indicated that energetic ion beam could directly act on cells beneath the pollen coats and made channels for entry of the molecules from outside of the cells. LCSM analysis of green fluorescent protein (GFP) showed that energetic ion beam could mediate transient expression of gfp in treated pollen cells. Compared with 25.0 keV N+ ion beam, implantation of 4.0 MeV C2+ ion beam greatly improved gene transfer efficiency in pollen cells.     

Transferring gfp gene with ion implantation and transient expression of gfp in liliaceous pollen cells

Anewtechniqueofgenetransfermediatedbyenergeticionbeamirradiationorimplantationwasde velopedinrecentyears .Stokeretal.[1] foundthatthesusceptibilityofcricetidaeembryocellstoaden ovirustransformationwassignificantlyimprovedbyX rayradiation .Stevensetal.[2 ] andZengetal.[3]foundthatpreliminarytransferrateofplasmidDNAcouldbeimprovedtoalargedegreebyionizingradia tion .UV[4 ] andenergeticheavyions[5] werefoundtohavesimilareffects ,whichindicatedthationizingra diationcouldmakeiteasyforextraneousDN…     

低能V+注入花生种子引起生物体的微结构变化及其机理

以植物干种子花生为生物体材料,注入200keV的低能V＋离子,采用正电子湮没技术（PAT）测定了经离子注入和未经离子注入的2类花生生物样品的正电子湮没寿命谱PAL,实验结果表明,在花生种子生物体内存在着大量微小的孔洞,孔洞的直径为0．7nm,经低能离子注入以后,这些孔洞的大小会有所变化,对低能离子注入生物效应的机理进行了探讨。     

280keV离子注入机磁分析器的研究

概述了２８０ｋｅＶ离子注入机磁分析器的设计和性能，详细地讨论了调节极面对聚焦的影响。     

Biological Effects on Fruit Fly by N+ ion Beam Implantation

Mutation induced by low energy ion beam implantation has beenapplied widely both in plants and microbes. However, due to the vacuum limitation, such ion implantation into animals was never studied except for silkworm. In this study, Pupae of fruit fly were irradiated with different dosage N+ ions at energy 20 KeV to study the biological effect of ion beam on animal. The results showed a saddle-like curve exists between incubate rate and dosage. Damage of pupae by ion beam implantation was observed using scanning electron microscope. Some individuals with incomplete wing were obtained after implantation but no similar character was observed in their offspring. Furthermore, about 5.47% mutants with wide variation appeared in M1 generation. Therefore, ion beam implantation could be widely used for mutation breeding.     

管型材料离子注入内表面改性研究进展

利用在管材中心引入同轴接地电极并在金属管材上加脉冲负偏压以产生径向离子加速电场,实现了金属管材内表面离子注入。目前国内外还有其它一些技术手段实现材料内表面改性,如脉冲放电爆炸金属箔注入、离子束溅射沉积、等离子体化学气相沉积法等。这些实验方法所遇到的主要问题是离子注入沿轴向不均匀、膜与基底结合不牢。在原实验方法基础上,又提出了一种新的方法——栅极增强等离子体源离子注入法。实验结果表明：此方法不但可以大大提高离子注入沿轴向的均匀性,而且可以实现气体离子和金属离子两种离子的共同注入。     

Co离子注入对ZnO纳米棒物理性质的影响

采用离子注入方法对ZnO纳米棒阵列进行Co离子掺杂,对比分析未掺杂的和Co离子注入后的微观结构的变化.通过室温光致发光测试比较发现两类样品具有显著不同的结果,分析得出与离子注入后氧空位缺陷的增加有关.同时磁学性能的测试结果表明富含氧空位缺陷的掺杂后的样品有利于实现铁磁性.     

离子注入金属的实验研究

介绍离子注入物理冶金及表面改性方面的研究成果。研究离子注入非晶合金、化合物形成、细化晶粒;离子注入改变金属表面性质的作用。进一步说明了离子注入不仅是一种理想的物理冶金方法,而且也是一种新的表面处理技术。     

离子注入对多晶金刚石薄膜场发射特性影响的研究

对等离子增强化学气相淀积多晶金刚石薄膜在Ｎ离子注入前后的场发射特性进行研究。研究发现,同一工艺条件下的淀积的多晶金刚石薄膜样口的发展射特性在离子注入前有较大的差异,离子注入后金刚石石薄膜场发射特性的差异基本上得到消除,而且在高场下发射电流密有一定程度的提高,场发射特性得到较大改善。     

用内转换电子穆斯堡尔谱研究氮离子注入纯铁和GCr15 钢的温度效应

在离子束注入金属材料表面改性的研究中，氮离子束注入钢已被证实是一种很有效的表面改性 方法，它能显著改善钢表面的耐磨性能，但表面性能的改善与注入条件密切相关。本文用内转换电子穆斯堡尔谱分析不同温主廿注入的纯铁和ＧＣｒ１５，并讨论注入温度对改性的影响。     

低能碳离子对甜菊生长和叶绿体发育的影响

研究了能量为１００ｋｅＶ,剂量为１０＾１５／ｃｍ＾２的碳离子对甜菊种子萌发率、幼苗生长发育及叶绿体结构的影响,证明被注入种子出现萌发迟缓、生长速度减慢、植株型变矮和生物量减少等生物学性状变化,幼叶细胞的叶绿体发育分化减慢,基质类囊体形成滞后,基粒数及基粒类囊体片层减少,部分幼叶细胞叶绿体膜破损、基质片层断裂直至叶绿体解体,表明该能量剂量的碳离子注入将影响种子的生长发育,其原因之一是叶绿全发育迟缓和     

Research progress in the inner surface modification of metal tubes by plasma processing

The recent progress in inner surface hardening of tubes by plasma processing is summerized. Several techniques of inner surface plasma source ion implantation and deposition are introduced, and their advantages and disadvantages are discussed. The basic principles, technical features and new progress of inner surface plasma source ion implantation methods for metal tubes, which were developed in our laboratory, are described in detail. And perspectives of the future technical development for inner surface ion implantation of tubes are presented.     

Simulation methods of ion sheath dynamics in plasma source ion implantation

Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is discussed by analyzing some calculated results. In addition,based on the relative researches in our laboratory, some calculated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Finally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.     

H+ passivation of poly-si solar cells processed by different annealing processes

The effects of different annealing processes on the photovoltaic (PV) properties and the spectral response as well as minority carrier lifetime in the bulk of unanalyzed PF₅ ion implantation poly-Si solar cells were investigated. The different hydrogen passivation effects of defects in poly-Si induced by three heat treatment processes are reported. We used RTA-rapid thermal annealing, YAG pulse laser annealing and CTSA-classical three-step annealing for this study. The results show that cells processed by RTA (800°C, 4 sec) achieved the best PV properties and spectral response among all annealed samples. Under this precess condition, no or few defects were induced in bulk. While RTA (>-850°C for 4 sec), CTSA as well as YAG laser processes induced defects of different nature and concentration in the bulk of cells. It is further shown that hydrogen ion implantation significantly improved, the performances of poly-Si cells. It is able to efficiently remove the YAG laser induced defects in bulk. However, it cannot completely passivate the defects induced by CTSA and RTA processes. Biography: LI Jin-chai (1946-), male, Associate professor. Research direction: studies of ion beam modification of materials and films of new functionail materials.     

用质子激发X射线发射分析技术测量晶片表面的污染物

介绍了PIXE（质子激发X射线发射）分析技术分析硅晶片表面杂质元素的探测灵敏度和最低可探测限,用此分析技术,对在几个注入机上进行的注氧硅晶片的污染情况进行了测定,发现在有的注入机上注氧时带进了Cr,Mn,Fe,Cu等污染元素,结果表明,PIXE分析技术具有高灵敏、非破坏性等优点,十分适合在这一领域的研究中应用。