Photoluminescence and cathodoluminescence properties of a novel CaLaGa307：Dy3＋ phosphor

A single host white emitting phosphor, CaLaGa3O7:Dy3+, was synthesized by chemical co-precipitation. Field emission scanning electron microscopy, X-ray diffraction, laser particle size analysis, and photoluminescence and cathodoluminescence spectra were used to investigate the structural and optical properties of the phosphor. The phosphor particles were composed of microspheres with a slight tendency to agglomerate, and an average diameter was of about 1.0 μm. The Dy3+ ions acted as luminescent centers, and substituted La3+ ions in the single crystal lattice of CaLaGa3O7 where they were located in Cs sites. Under excitation with ultraviolet light and a low voltage electron beam, the CaLaGa3O7:Dy3+ phosphor exhibited the characteristic emission of Dy3+ (4F9/2-6H15/2 and 4F9/2-6H13/2 transitions) with intense yellow emission at about 573 nm. The chromaticity coordinates for the phosphor were in the white region. The relevant luminescence mechanisms of the phosphor are investigated. This phosphor may be applied in both field emission displays and white light-emitting diodes.     

Fabrication and spectra characteristics of high efficiency white organic light-emitting diodes with single emitting layer

High-efficiency white organic light-emitting devices with single emitting layer are demonstrated. N,N‘-diphenyI-N,N‘-bis(1,1‘-biphenyl)-4,4‘-diamine (NPB) is used as hole transport layer, while 4,7-diphenyl-l,10-phenan-throline (BPhen) as electron transport layer and 9,10-di-(2-naphthyl)-2-terbutyl-anthracene (TADN) doped with the fluorescent dye 4-(dicyanomethylene)-2-t-buty1-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) as single emissive layer. The effects of performance by the concentration of DCJTB and the thickness of emissive layer are studied. The device with a structure of indium tin oxide/NPB (50 nm)/TADN: 0.2% DCJTB (15 nm)/BPhen (40 nm)/Mg: Ag shows a maximum brightness of 11400 cd/m^2, a peak current efficiency of 5.6 cd/A and power efficiency of 4.1 Ira/W, while the low turn-on voltage of 3.1 V and the stability of the Commission International De L‘Eclairage coordinate. The spectra through color filter of the device are also studied.     

Removal of NO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> by radical injection

Removal of NOx(DeNOx, NOx is the total of NO and NO2) from flue gas by radical injection has been investigated .the discharge characteristics were examined and the steady streamer corona was acquired hy adjusting the nozzle gases properly. It was Found that an increase in the voltage resulted in a decrease in the NO concentration and the concentration of the NO2 increased at tow voltages but decreased as the voltage rose to a certain level. The DeNOx efficiency increased as the applied voltage rose and reached a maximum of 70% when the voltage approached the breakdown voltage. The hypothetical mechanism of NOx removal suggested that the radicals formed in the discharge process converted the NO and NO2 into acidic species. The Monte Carlo method was used to calculate the rate coefficients and the productivity of the radicals, and then the concentrations of both NO and NO2 and the DeNOx effielencies were calculated with chemical kinetics. The calculated DeNOx efficiencies were coalparable with the experimental DeNOx efficiencies at low voltages, but were lower at high voltages.     

Dependence of the stability of organic light-emitting diodes on driving mode

We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic light-emitting diodes with and without hole-injection layers (HILs).Two different HIL materials were used:copper phthalocyanine (CuPc) and 4,4’,4″-tris(3-methylphenylphenylamino)triphenylamine (m-MDTATA).It was found that the half-lives of devices using PC driving modes were different from those of comparable devices using DC driving modes.For the devices without HILs,with CuPc HILs and with MTDATA HILs,the half-lives of the devices were changed by factors of 1.91,1.41 and 0.86,respectively,when operated in PC rather than DC driving modes.Our analysis of the electrical characteristics of the corresponding hole-only devices showed that the number of holes injected into devices was greatly reduced by inserting an m-MTDATA layer compared with other designs.The results indicate that different ratios of injected electrons and holes can be obtained in these devices.Moreover,these ratios play a dominant role in the dependence of the stability of the device on the driving mode.     

Enhanced deposition of Zn O films by Li doping using radio frequency reactive magnetron sputtering

Radio frequency(RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide(Zn O) films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–Zn O. X-ray diffraction analysis demonstrates that Li doping promotes the(002) preferential orientation in Li-doped Zn O films. However, an increase in the Zn O lattice constant, broadening of the(002) peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2 O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped Zn O will make significant applications in future surface acoustic wave devices.     

Stability study of saturated red polymer light-emitting diodes

Saturated red polymer light-emitting diodes have been fabricated with a single emitting polymer blend layer of poly[2-(2-ethylhexyloxy)-5-methoxy-1,4-phenylenevinylene] (MEH-PPV) and poly[9,9-dioc- tylfluorene-co-4,7-di-2-thienyl-2,1,3-benzothiadiazole] (PFO-DBT15). Saturated red emission with the Commission Internationale de l’Eclairage (CIE) coordinates of (0.67, 0.33) was obtained. The device stability was investigated. The results showed that energy transfer occurred from MEH-PPV to PFO-DBT15, and MEH-PPV improved the hole injection and transportation.     

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Highly transparent and conducting Al-doped Zn O(Al:Zn O) thin films were grown on glass substrates using pulsed laser deposition technique.The profound effect of film thickness on the structural, optical and electrical properties of Al:Zn O thin films was observed. The X-ray diffraction depicts c-axis, plane(002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in Zn O introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:Zn O thin films are important for applications such as transparent electromagnetic interference(EMI) shielding materials and solar cells. The obtained optical band gap(3.2–3.08 e V) was found to be less than pure Zn O(3.37 e V) films. The lowering in the band gap in Al:Zn O thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:Zn O thin films for light emitting devices(LEDs) applications. The current–voltage(I–V) measurements show the ohmic behavior of the films with resistivity(ρ) 10-3Ω cm.     

Preparation of Zn-doped TiO2 nanotubes electrode and its application in pentachlorophenol photoelectrocatalytic degradation

Zn-doped titanium oxide （TiO2） nanotubes electrode was prepared on a titanium plate by direct anodic oxidation and immersing method in sequence. Field emission scanning electron microscopy （FESEM） showed that the Zn-doped TiO2 nanotubes were well aligned and organized into high density uniform arrays with diameter ranging from 50 to 90 nm. The length and the thickness were about 200 and 15 nm respectively. TiO2 anatase phase was identified by X-ray diffraction （XRD）. X-ray photoelectronspectroscopy （XPS） indicated that Zn ions were mainly located on the surface of TiO2 nanotubes in form of ZnO clusters. Compared with TiO2 nanotubes electrode, about 20 nm red shift in the spectrum of UV-vis absorption was observed. The degradation of pentachlorophenol （PCP） in aqueous solution under the same condition （initial concentration of PCP： 20 mg/L; concentration of Na2SO4：0.01 mol/L and pH： 7.03） was carried out using Zn-doped TiO2 nanotubes electrode and TiO2 nanotubes electrode. The degradation rates of PCP using Zn-doped TiO2 nanotubes electrode were found to be twice and 5.8 times as high as that using TiO2 nanotubes electrode by UV radiation （400 μw/cm^2） and visible light radiation （4500 μw/cm^2）, respectively. 73.5% of PCP was removed using Zn-doped TiO2 nanotubes electrode against 45.5% removed using TiO2 nanotubes electrode in 120 min under UV radiation. While under visible light radiation, the degradation efficiency of PCP was 18.4% using Zn-doped TiO2 nanotubes electrode against 3.2% using TiO2 nanotubes electrode in 120 min. The optimum concentration of Zn doping was found to be 0.909%. The PCP degradation efficiencies of the 10 repeated experiments by Zn-doped TiO2 nanotubes electrode were rather stable with the deviation within 3.0%.     

Effect of Zinc additive on dielectric properties of Cd–Se glassy system

Cd5Se95–xZnx(x=0, 2, 4, 6) glassy alloy has been prepared by a melt-quenching technique. Thin films were deposited by thermal coating unit on ultraclean glass substrate under a vacuum of 10–6Torr. The absence of any sharp peaks in the X-ray diffraction confirms the amorphous nature of thin films. The frequency and temperature dependence of dielectric constant and dielectric loss in the frequency range of 1 kHz to 1 MHz and in the temperature range of 290–370 K were studied. Dielectric dispersion was observed when Zinc(Zn) was incorporated into the Cd–Se system.The increase in dielectric parameter with Zn concentration may be due to increase in defect states. The DC conductivity has been reported to investigate the effect of Zn concentration on DC conduction loss. The results are interpreted in term of dipolar theory for Cd5Se95 and Cd5Se93Zn2samples, while the remaining samples have been explained on the basis of DC conduction loss. It was also observed that the DC conductivity increased with the increase of Zinc concentration, which may be due to the decrease in the band gap near Fermi level.     

Zinc oxide nanostructures and porous films produced by oxidation of zinc precursors in wet-oxygen atmosphere

Wet oxidation can be used to produce high quality zinc oxide(ZnO) nanostructures at moderately high temperatures with low requirements of equipment and experimental conditions.Zn precursor films were prepared by magnetron sputtering and controlled ZnO nanostructures were produced by oxidation of the Zn precursor films in wet O_2.The growth mechanism of the ZnO nanowires and nanobelts in wet oxidation was discussed based on the experimental results.Silver and nitrogen doping were realized in the wet oxida...     

混合主体材料分布对白色磷光有机发光二极管器件光谱性能的影响

在具有双发光层结构的二元白光器件中,研究了混合主体材料的位置和混合主体与客体材料的不同组合对白色有机发光二极管(WOLED)器件电光特性和光谱性能的影响。通过实验,在简单的器件结构中,同时获得了高效率和高颜色稳定性的器件,最优器件的最大亮度为29 630cd/m~2,最大功率效率和电流效率分别为20.84lm/W和33.87cd/A。当电压在5～9V之间变化时,色坐标(CIE1931)为(0.37±0.01,0.44±0.01)。     

两种芳胺基团修饰的螺二芴衍生物在有机电致发光材料及荧光探针中的应用

通过在螺二芴上引入芳胺基团制备出两种全新的螺二芴衍生物SPF-1和SPF-2.化合物SPF-1能够通过荧光强度检测有机溶剂中的含水量.其中,SPF-1在1,4-二氧六环中对水的检测限达到0.018％,在四氢呋喃（THF）中对水的检测限达到0.049％,结果优于大多数文献的报道.另外,SPF-1和SPF-2都可用作有机电致发光（EL）器件的发射层材料.SPF-1制备的器件在506 nm附近有强的发射峰,色度坐标为（0.24,0.48）;SPF-2制备的器件在471 nm和502 nm处有较强发射,色度坐标为（0.31,0.54）.两个器件都具有低开启电压、高热稳定性等优异性能.其中SPF-1的最大亮度、最大电流效率和最大功率效率分别为1 653 cd·m^-2,2.55 cd·A^-1和1.23 lm·W^-1,SPF-2的最大亮度、最大电流效率和最大功率效率为是1 660 cd·m^-2,2.1 cd·A^-1和1.28 lm·W^-1.     

Rubrene分子间距对有机发光二极管中单重态激子裂变过程的调控

利用5,6,11,12-tetraphenylnaphthacene（Rubrene）中单重态激子分裂的性质（一个单重态激子（S）可以分裂成两个三重态激子（T）,S→T＋T）,本文制备了Rubrene与Bathocuproine（BCP）共混型有机发光二极管（OLEDs）,测量了器件电致发光的磁效应（Magneto-Electroluminescence,MEL）及其瞬态电致发光光谱．实验发现,随着Rubrene分子间距的增大（掺杂浓度减小）,单重态激子分裂强度逐渐变弱,即Rubrene分子间距对内部激子分裂有调控作用．该调控作用表现在两个方面：第一,MEL的高场上升幅度（-500mT处对应的值）随着掺杂浓度减小而下降,当浓度为20wt％时高场出现下降;第二,在～20mT处MEL的值随着掺杂浓度的减小从负变到正．此外,器件瞬态电致发光光谱在撤去脉冲电压后的快速下降部分在小掺杂浓度时下降变快．通过分析单重态激子分裂与Rubrene分子间距之间的关系,以及磁场对单重态激子分裂的影响,我们对该现象做了定性的讨论．     

Structural diversity and reactivity of d^10 metal- （4-pyridylthio）acetate system

The hydrothermal synthesis and crystal structures of four coordination polymers, namely, 2D [Zn（μ3-ta）（pytaH）]n （1）, 2D [Zn（μ3-pyta）Cl]n （2）, 1D [Cd（μ-pyta）2（H2O）]n （3）, and 3D [Cd（μ3-pyta）（μ-Cl）]n （4） （pyta = （4-pyridylthio）acetate, ta = thioglycolate）, are reported. They are based on （4-pyridylthio）acetate and its derived ligand. The ta^2- ligand present in 1 was generated from an in situ C（sp^2）-S bond cleavage of the pyta ligand. In these compounds, versatile intermolecular interactions, such as close S…S interactions and strong （O-H…O/N/S） or weak （C-H…O/S, C-H…Cl） hydrogen bonding interactions, play an important role in the formation of three-dimensional supramolecular networks in the solid state.     

白光LED用新型低温玻璃荧光体SiO2YAG:Ce3+的制备及性能研究

 采用溶胶凝胶法制备并研究了白光LED用新型低温玻璃荧光体SiO₂YAG:Ce³⁺的发光性能。X-射线衍射(XRD)图谱分析表明所得荧光体主相为Y₃Al₅O₁₂;扫描电镜照片(SEM)显示其粒径在10 μm左右;双指数拟合后的荧光寿命是10.29和58.89 ns;该玻璃荧光体与蓝光芯片组合成的白光LED器件具有良好的色坐标(0.303,0.319),研究表明SiO₂YAG:Ce³⁺是一种潜在的无环氧树脂的新型白光LED用荧光体。     

Treatment of Wastewater Containing Polyacrylamide Using Three Dimensional Electrodes

A method using three-dimensional electrode is applied to treat wastewater in oil fields, which contains polyacrylamide (PAM), for analogue. A best condition for electrolysis (I=1.0 A, t=90 min, c=0.1%, m=980 g,φ =5 mm, d=5.0 cm) has been determined, under which the COD removal efficiency reached 96.0%, COD containing in wastewater reduced to 64.3 mg/L from 1 622.9 mg/L, the figure before treatment. Three categories of PAM-containing wastewater in production practice have been treated with the COD removal ratios being 87.5%, 82.4% and 84.7% respectively. Presence of H_2O_2 and·OH are detected by means of Ti(Ⅳ)-5-Br-PADAP technique and colorimetry respectively. The concentration is positively proportional to the COD removal ratio and increases in accordance with increment of time of electrolysis and current.     

基于N-BDAVBi的非掺杂高效蓝色OLEDs

采用真空蒸镀方法,制备了以N-BDAVBi为发光层的高效率非掺杂蓝色有机电致发光器件,器件的结构为ITO/2T-NATA(40 nm)/NPB( 10 nm)/N-BDAVBi( (3+d) nm)/ADN(7 nm)/N-BDAVBi( (3+d) nm)/ADN (7 nm)/Alq3 (30 nm)/LiF(0....     

Preparation and luminescence characteristics of Sr3SiO5：Eu^2＋ phosphor for white LED

The Sr3SiO5：Eu^2＋ phosphor was synthesized by high temperature solid-state reaction. The emission spectrum of Sr3SiO5：Eu^2＋ shows two bands centered at 487 and 575 nm, which well agree with the theoretic values of emission spectrum. The excitation spectrum for 575 nm emission center has several excitation bands at 365, 418, 458 and 473 nm. And the results show that the emission spectrum of Sr3SiO5：Eu^2＋ is influenced by the Eu^2＋ concentration. The relative emission spectra of the white-emitting InGaN-based YAG：Ce^3＋ LED and Sr3SiO5：Eu^2＋ LED were investigated. The results show that the color development of InGaN-based Sr3SiO5：Eu^2＋ is better than that of InGaN-based YAG：Ce^3＋, and the CIE chromaticity of InGaN-based Sr3SiO5：Eu^2＋ is （x=0.348, y=0.326）.     

锌掺杂对Li4Ti5O12负极材料电化学性能的影响

通过溶胶凝胶法制备Li4Ti5O12及锌掺杂Li4-2x/3ZnxTi5-x/3O12(x=0.05,0.10,0.15,0.20)活性材料,并优化了最佳掺杂量为x=0.10。通过X射线衍射(XRD)、扫描电镜(SEM)、恒流充放电测试对材料进行结构、形貌及电化学性能表征。结果表明:掺杂适量的锌离子不会改变钛酸锂的尖晶石结构和形貌,1C时,Li3.93Zn0.10Ti4.97O12放电比容量升高且容量保持率为99.74%;而纯相的容量保持率仅为94.30%。     

A Novel Degradation Pathway of Zn（dmid） （ phen）2 in Pyridine

The light-oxidation degradation processes of Zn(dmid)(phen)2(dmid = 4, 5-dimercapto-1,3-dithiole-2 one, phen = 1,10-phenanthroaline) in pyridine solvent has been monitored, h has been found under the light, dmid^2- of Zn(dmid)(phen)2 in pyridine solution could generate NCS^- and NCS^-replaces dmid^2- to form Zn(NCS)2 (phen)2 simultaneously. The crystal structure of Zn(NCS)2 (phen)2 has been determined. In the crystal of Zn(NCS)2 (phen)2. two NCS^- ligands are arranged in syn-configuration, and there is strong π-π interaction between the two adjacent parallel phen.