界面二氧化硅层对二极管辅助硅基磁电阻效应影响的研究

本文制备了二极管辅助的晶体硅磁阻(magnetoresistance,MR)器件,研究了界面二氧化硅层的磁阻放大作用及器件在硅基磁电子器件中的可能应用.通过有与无二氧化硅层的实验对比,发现引入二氧化硅层后器件的磁阻在室温和1.2T磁场下达到了527%,磁阻性能提升了76%以上.通过对无磁场作用下伏安特性的测量,证明了氧化硅层的引入增加了界面电阻,通过等效电路分析,对相关机理进行了讨论.这项工作将为硅基磁电子器件的可能应用提供一种新的方法.     

Non-saturating magnetoresistance in heavily disordered semiconductors

The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of the order of 1 T (refs 1, 2). A surprising exception to this behaviour has recently been observed in doped silver chalcogenides, which exhibit an anomalously large, quasi-linear magnetoresistive response that extends down to low fields and survives, even at extreme fields of 55 T and beyond. Here we present a simple model of a macroscopically disordered and strongly inhomogeneous semiconductor that exhibits a similar non-saturating magnetoresistance. In addition to providing a possible explanation for the behaviour of doped silver chalcogenides, our model suggests potential routes for the construction of magnetic field sensors with a large, controllable and linear response.     

A subfemtotesla multichannel atomic magnetometer

The magnetic field is one of the most fundamental and ubiquitous physical observables, carrying information about all electromagnetic phenomena. For the past 30 years, superconducting quantum interference devices (SQUIDs) operating at 4 K have been unchallenged as ultrahigh-sensitivity magnetic field detectors, with a sensitivity reaching down to 1 fT Hz(-1/2) (1 fT = 10(-15) T). They have enabled, for example, mapping of the magnetic fields produced by the brain, and localization of the underlying electrical activity (magnetoencephalography). Atomic magnetometers, based on detection of Larmor spin precession of optically pumped atoms, have approached similar levels of sensitivity using large measurement volumes, but have much lower sensitivity in the more compact designs required for magnetic imaging applications. Higher sensitivity and spatial resolution combined with non-cryogenic operation of atomic magnetometers would enable new applications, including the possibility of mapping non-invasively the cortical modules in the brain. Here we describe a new spin-exchange relaxation-free (SERF) atomic magnetometer, and demonstrate magnetic field sensitivity of 0.54 fT Hz(-1/2) with a measurement volume of only 0.3 cm3. Theoretical analysis shows that fundamental sensitivity limits of this device are below 0.01 fT Hz(-1/2). We also demonstrate simple multichannel operation of the magnetometer, and localization of magnetic field sources with a resolution of 2 mm.     

Giant magnetoresistance in organic spin-valves

A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling magnetoresistance in metallic spin valves have revolutionized applications such as magnetic recording and memory, and launched the new field of spin electronics--'spintronics'. Intense research efforts are now devoted to extending these spin-dependent effects to semiconductor materials. But while there have been noteworthy advances in spin injection and detection using inorganic semiconductors, spin-valve devices with semiconducting spacers have not yet been demonstrated. pi-conjugated organic semiconductors may offer a promising alternative approach to semiconductor spintronics, by virtue of their relatively strong electron-phonon coupling and large spin coherence. Here we report the injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure, yielding low-temperature giant magnetoresistance effects as large as 40 per cent.     

磁电阻温度关系的二端法测量和数据处理

介绍了一种磁电阻测量方法，采用直流稳压电源、电脑X－Y记录仪、电磁铁和温度装置，通过测量电路中串入标准电阻R1两端的电压，计算出被测样品在不同温度下的电阻，进而计算出磁电阻。方法简单，测量数据精确。     

Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions

Magnetic tunnel junctions (MTJs), as the seminal spintronic devices, are expected for applications in magnetoresistive sensors due to their large magnetoresistance (MR) and high field sensitivity. Two hybrid Co/insulator/ZnO:Co junctions were fabricated with two different barriers to investigate the magneto-transport properties. Experimental results indicate that, both Co/MgO/ZnO:Co and Co/ZnO/ZnO:Co junctions show the positive and nearly linear MR, and their tunnel magnetoresistances (TMR) are 21.8% and 13.6%, respectively, when the current is applied perpendicular to the film plane under the magnetic field of 2 T at 4 K. The nonlinearity of MR is less than 1% within the magnetic field (H) of 1 kOe < H < 12 kOe at low temperature, making them attractive as magnetoresistive sensors. The higher MR of Co/MgO/ZnO:Co junctions is due to the superior spin filtering effect and larger effective barrier height of the MgO barrier. This linear MR characteristic of Co/insulator/ZnO:Co structures shows a promising future on the applications of diluted magnetic semiconductors in magnetoresistive sensors.     

颗粒系统稀土掺杂氧化物的磁电阻效应

具有钙钵矿结构的稀土掺杂氧化物具有很强的磁电阻效应，该类材料所显示的复杂的物理现象和可能的应用前景引起人们的很大兴趣。但是其磁转变温度一般低于室温，而且需要很高的外加磁场才能够饱和。为实现室温和低场磁电阻，人们采用多种方法，如制备复合材料或尺寸在纳米量级的多晶体系。本文重点介绍了锰酸盐颗粒体系的结构特点、磁电阻效应以及产生成电阻效应的可能机理。     

Magnetoresistance from quantum interference effects in ferromagnets

The desire to maximize the sensitivity of read/write heads (and thus the information density) of magnetic storage devices has stimulated interest in the discovery and design of new magnetic materials exhibiting magnetoresistance. Recent discoveries include the 'colossal' magnetoresistance in the manganites and the enhanced magnetoresistance in low-carrier-density ferromagnets. An important feature of these systems is that the electrons involved in electrical conduction are different from those responsible for the magnetism. The latter are localized and act as scattering sites for the mobile electrons, and it is the field tuning of the scattering strength that ultimately gives rise to the observed magnetoresistance. Here we argue that magnetoresistance can arise by a different mechanism in certain ferromagnets--quantum interference effects rather than simple scattering. The ferromagnets in question are disordered, low-carrier-density magnets where the same electrons are responsible for both the magnetic properties and electrical conduction. The resulting magnetoresistance is positive (that is, the resistance increases in response to an applied magnetic field) and only weakly temperature-dependent below the Curie point.     

Spintronic materials and devices based on antiferromagnetic metals

In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring is realized by adopting ionic liquid. In addition, promising spin-orbit effects in AFM as well as spin transfer via AFM spin waves reported by different groups have also been reviewed, indicating that the AFM can serve as an efficient spin current source. To explore the crucial role of AFM acting as efficient generators, transmitters, and detectors of spin currents is an emerging topic in the field of magnetism today. AFM metals are now ready to join the rapidly developing fields of basic and applied spintronics, enriching this area of solid-state physics and microelectronics.     

在垂直和任意方向磁场中的六角形超导网络相边界

给出了在垂直外磁场和任意方向外磁场中的七节点六角形超导网络相边的精确解析表达式,由此表达式求出了两种情况下的六角形网络的相边界,得到了在任意方向外磁场中的网络相边界Ｔｃ（Ｈ）是以敏感和复杂的方式依赖于磁场大小和方向,并对相边界Ｔｃ（Ｈ）这些特性的某些应用给予了讨论。     

增强型电磁驱动装置瞬态磁场分析

 基于ANSYS有限元仿真平台的动网格技术,建立了三维增强型电磁驱动装置有限元模型。结合440 kA发射条件下增强型电磁驱动装置附近的空间磁场分布,验证了模型的可靠性。结合模型开展仿真,获得了增强型电磁驱动装置内膛中轴线上磁场的分布规律,以及电磁驱动装置径向磁场在空间的衰减规律。指出电流峰值时刻,电枢前端的磁感应强度随着距离增大先增大,而后趋于不变。在模型中,可认为电枢前端磁场最大为2.3~3.3 T。     

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.     

Current-induced domain-wall switching in a ferromagnetic semiconductor structure

Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest as a promising alternative encoding method. Indeed, spin-polarized currents can reverse the magnetization direction of nanometre-sized metallic structures through torque; however, the high current densities of 10(7)-10(8) A cm(-2) that are at present required exceed the threshold values tolerated by the metal interconnects of integrated circuits. Encoding magnetic information in metallic systems has also been achieved by manipulating the domain walls at the boundary between regions with different magnetization directions, but the approach again requires high current densities of about 10(7) A cm(-2). Here we demonstrate that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 10(5) A cm(-2). The slow switching speed and low ferromagnetic transition temperature of our current system are impractical. But provided these problems can be addressed, magnetic reversal through electric pulses with reduced current densities could provide a route to magnetic information storage applications.     

Strongly linked current flow in polycrystalline forms of the superconductor MgB2

The discovery of superconductivity at 39 K in magnesium diboride, MgB2, raises many issues, a critical one being whether this material resembles a high-temperature copper oxide superconductor or a low-temperature metallic superconductor in terms of its behaviour in strong magnetic fields. Although the copper oxides exhibit very high transition temperatures, their in-field performance is compromized by their large anisotropy, the result of which is to restrict high bulk current densities to a region much less than the full magnetic-field-temperature (H-T) space over which superconductivity is found. Moreover, the weak coupling across grain boundaries makes transport current densities in untextured polycrystalline samples low and strongly sensitive to magnetic field. Here we report that, despite the multiphase, untextured, microscale, subdivided nature of our MgB2 samples, supercurrents flow throughout the material without exhibiting strong sensitivity to weak magnetic fields. Our combined magnetization, magneto-optical, microscopy and X-ray investigations show that the supercurrent density is mostly determined by flux pinning, rather than by the grain boundary connectivity. Our results therefore suggest that this new superconductor class is not compromized by weak-link problems, a conclusion of significance for practical applications if higher temperature analogues of this compound can be discovered.     

磁场退火对无取向硅钢再结晶织构和组织的影响

为了研究磁场退火对金属材料的再结晶织构和晶粒尺寸的影响,对冷轧无取向硅钢薄板进行了普通退火以及0.1,6和12 T下的磁场退火,磁场沿轧向施加.研究表明,磁场退火显著影响再结晶织构的取向密度和晶粒尺寸,且与磁感应强度成非线性关系.磁场退火增强有利的η(〈001〉∥RD)和{100}织构,减弱不利的γ(〈111〉∥ND)织构,该效应在6 T磁场下较显著;再结晶晶粒尺寸在6 T磁场退火时较大,普通及12T磁场退火时居中,0.1 T磁场退火时较小.从磁场降低晶界可动性和提供与取向相关的附加晶界迁移驱动力的角度,分析了磁场作用机制.     

Electronic measurement and control of spin transport in silicon

The spin lifetime and diffusion length of electrons are transport parameters that define the scale of coherence in spintronic devices and circuits. As these parameters are many orders of magnitude larger in semiconductors than in metals, semiconductors could be the most suitable for spintronics. So far, spin transport has only been measured in direct-bandgap semiconductors or in combination with magnetic semiconductors, excluding a wide range of non-magnetic semiconductors with indirect bandgaps. Most notable in this group is silicon, Si, which (in addition to its market entrenchment in electronics) has long been predicted a superior semiconductor for spintronics with enhanced lifetime and transport length due to low spin-orbit scattering and lattice inversion symmetry. Despite this promise, a demonstration of coherent spin transport in Si has remained elusive, because most experiments focused on magnetoresistive devices; these methods fail because of a fundamental impedance mismatch between ferromagnetic metal and semiconductor, and measurements are obscured by other magnetoelectronic effects. Here we demonstrate conduction-band spin transport across 10 mum undoped Si in a device that operates by spin-dependent ballistic hot-electron filtering through ferromagnetic thin films for both spin injection and spin detection. As it is not based on magnetoresistance, the hot-electron spin injection and spin detection avoids impedance mismatch issues and prevents interference from parasitic effects. The clean collector current shows independent magnetic and electrical control of spin precession, and thus confirms spin coherent drift in the conduction band of silicon.     

基于二步法的多芯电缆非侵入式电流测量校正方法

为了解决多芯电缆的非侵入式电流测量由于被测对象信号微弱、系统灵敏度高、易受环境因素干扰,造成测量误差较大的问题,采用磁阻传感器的非侵入式电流测量系统为研究对象,在分析系统测量方法及硬铁、软铁和比例因子等误差构成的基础上,提出一种基于二步法的误差校正方法,该方法通过对传感器输出信号进行非线性变换,构造了与误差相对应的矩阵方程,并在对方程求解后进行非线性回归计算,从而实现对多芯电缆的电流测量值的动态误差修正.实验结果表明,该方法可以同时校正非侵入式电流测量系统的线性误差与部分非线性误差.     

巨磁电阻自旋阀多层膜的结构和磁性

用磁控溅射镀膜方法，制成了巨磁电阻自旋阀多层膜Ｔａ／ＮｉＦｅ／Ｃｕ／ＮｉＦｅ／ＦｅＭｎ／Ｔａ。它具有优良的特性。其室温磁电阻比率ＭＲ〉２％，自由层矫元力Ｈｃｌ〈１６０Ａ／ｍ，自由层零磁场漂Ｈｆ〈８００Ａ／ｍ和钉 扎层交换场Ｈｅｘ≈２０×１０＾３Ａ／Ｍ。     

Megagauss sensors

Magnetic fields change the way that electrons move through solids. The nature of these changes reveals information about the electronic structure of a material and, in auspicious circumstances, can be harnessed for applications. The silver chalcogenides, Ag2Se and Ag2Te, are non-magnetic materials, but their electrical resistance can be made very sensitive to magnetic field by adding small amounts--just 1 part in 10,000--of excess silver. Here we show that the resistance of Ag2Se displays a large, nearly linear increase with applied magnetic field without saturation to the highest fields available, 600,000 gauss, more than a million times the Earth's magnetic field. These characteristics of large (thousands of per cent) and near-linear response over a large field range make the silver chalcogenides attractive as magnetic-field sensors, especially in physically tiny megagauss (10(6) G) pulsed magnets where large fields have been produced but accurate calibration has proved elusive. High-field studies at low temperatures reveal both oscillations in the magnetoresistance and a universal scaling form that point to a quantum origin for this material's unprecedented behaviour.     

钙钛矿La0.67Pb0.33MnO3薄膜的制备及表征

利用磁控溅射法在单晶LaAlO3(100)衬底上成功的外延生长了La0.67Pb0.33MnO3薄膜。用X射线衍射、原子力和超导量子干涉仪、振动样品磁强计对其进行了表征。结果表明,薄膜为赝立方钙钛矿结构,晶胞参数为a=3.861 nm,具有良好的单晶外延结构和光滑的表面。居里温度TC=345 K,在居里温度附近,发生铁磁-顺磁转变。此材料呈现出一种典型的自旋玻璃特性,是由于应力造成的。在室温条件下,当H=0.8T时,磁电阻效应非常明显,此现象是由于固有磁电阻效应引起的,并不是低场磁电阻效应引起的。室温下,其矫顽力只有50奥斯特。