Structural, magnetic and transport properties of Sc-doped La0.7Sr0.3MnO3

The Sc-doped La_0.7Sr_0.3MnO₃ polycrystallines were prepared by thermal decomposition of complexes of metal ions with ethylenediamine-tetraacetic acid (EDTA). The dependence of structural, magnetic and transport properties on Sc doping was investigated. Moderate Sc doping level results in a sharp drop in Curie temperature, an increase in resistance and enhancement of magnetoresistance effect. At temperatures aboveT _MI,R(T) can be described asR(T) = R ₀exp(T ₀/T)^1/4, which indicates that conduction takes place by hopping between the localized states. The experimental data reveal that the change in magnetoresistance property is related to the structure.     

A位的Sm掺杂对La0.67Sr0.33MnO3体系磁电性质的影响

通过实验研究了La0.67-xSmxSr0.33MnO3(x=0.00,0.10,0.20,0.30)体系的M-T曲线、ESR曲线、ρ-T曲线和MR-T曲线.实验结果表明:随着Sm掺杂的增加,体系从长程铁磁有序向自旋团簇玻璃态和反铁磁状态转变,Sm掺杂引起的磁结构变化和额外磁性耦合将导致CMR效应.     

巨磁电阻材料La_(0.7)Ba_(0.3)Fe_xMn_(1-x)O_3的研究

采用溶胶-凝胶工艺制备了La0.7Ba0.3FexMn1-xO3化合物．研究了Fe掺杂对La－Ba－Mn－O体系的磁性、导电性和磁电阻效应的影响．     

过度掺杂的La1-xAgxMnO3室温磁电阻研究

对采用溶胶凝胶法制备的不同Ag含量的La1-xAgxMnO3样品进行了研究.观察到Ag的名义含量x为0.3和0.65的样品表现出显著的室温磁电阻,在1.8 T的外场下磁电阻(外加磁场后的电阻和未加磁场的电阻差值比上未加磁场的电阻值)分别达到-23.0%和-22.7%,接近实际应用要求.对其成因进一步分析后发现,在两种不同Ag含量的样品中出现的显著室温磁电阻效应,其形成原因并不相同.     

Cu低掺杂对La0.7Ca0.3MnO3电阻及磁电阻的影响

用溶胶凝胶法制备了Cu低掺杂的La0.7Ca0.3Mn1-xCuxO3(x=0%,1%,2%,3%,4%,5%)系列多晶材料.采用振动样品磁强计测量了系列样品的热磁曲线并获得了相应的居里温度,实验结果表明居里温度随着Cu掺杂量的增加而减少.在77~350 K温度范围内测量了样品的电阻和磁电阻,结果表明样品电阻率与温度的关系均具有明显的电阻峰结构.当x=5%时,开始出现双电阻峰结构;掺杂量x为1%,2%,3%,5%的样品在外场为0.4 T时存在较大的磁电阻极大值,分别为30.5%,25.4%,22.4%,18.8%,均大于未掺杂(x=0%)的13.5%.双交换(DE)模型简单地解释了Cu低掺杂对电阻及磁电阻行为的影响.     

Ca和Ba掺杂对La4/3Sr5/3Mn2O7的磁电阻效应的影响

用溶胶-凝胶法制备了双层钙钛矿锰氧化物La4/3(Sr1-xAx)5/3Mn2O7 (A是Ca或者Ba,x=0,0.1,0.2)系列多晶样品,并对其结构及电、磁输运性质进行了研究.研究结果表明:Ca和Ba的掺入虽然导致绝缘体-金属(I-M)转变温度(TI-M)降低,但可以明显提高低温区的磁电阻效应.对于x=0.2的Ca或Ba掺杂的样品,在60 K以下,磁电阻值接近100 %,且为一恒定值.对于这一实验结果可以作如下解释:Ca或Ba掺杂引起了MnO6八面体的畸变,导致eg电子占据dx2-y2轨道和d3z2-r2轨道的状态偏离了x=0时的优化组合状态,铁磁性被削弱.     

Magnetic properties and giant magnetoresistance effect of nanometer Fe-In2O3 granular films

Nanometer ferromagnetic metal-semiconductor matrix Fe-In2O3 granular films are fabricated by the radio frequency sputtering. Magnetic properties and the giant magnetoresistance (GMR) effect of Fex(In2O3)1x granular film samples are studied. The result shows that the magne-toresistance (MR) ratio/0 value of the granular film samples with Fe volume fraction x = 35% is 4.5% at room temperature. The temperature dependence (T = 1.5-300 K) of the MR ratio /0 value of Fe0.35(In2O3)0.65 granular films shows that /0 value below 10 K increases rapidly with the decrease of the temperature, and when T = 2 K,/0 value is 85%. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that, when the temperature decreases to a critical point TP = 10 K, the change of the structure in Fe0.35(In2O3)0.65 granular films results in the transformation of state from ferromagnetic to spin-glass-like. The remarkable increase of the MR ratio ???/??0 value of Fe0.35(In2O3)0.65 granular films below 10 K seems to arise from the peculiar conducting mechanism of the granular film samples in the spin-glass-like state.     

Co/Cu/Co结构中纳米氮化物界面掺杂研究

研究了纳米氮化物(NNL)界面掺杂对Co/Cu/Co磁电阻的影响.当NNL在下界面(Co/Cu)掺杂时,得到了反常磁电阻为-0.043%;当NNL在上界面(Cu/Co)掺杂时,磁电阻近似为0;当NNL同时在上、下界面掺杂时,得到的反常磁电阻为-0.005%.运用Camley-Barnas的玻尔兹曼半经典理论模型,通过调整界面参数计算其磁电阻,发现改变界面自旋相关散射系数能对实验结果给出合理解释,证明了NNL掺杂确实能改变界面自旋相关散射系数.     

非线性波方程Cauchy问题整体解的存在性和非存在性

考虑非线性波方程utt- 2kuxxt=g（ ux ）x,的Cauchy问题,其中,k〉0为实数,g（s）是给定非线性函数．当g（s）=s^n时（n≥2为整数）,由Fourier变换方法和绝对值估计,证明了对任意T〉0,如果初始数据u0∈W^3.1（R） ∩ H^2（R） , u1∈W^1.1（R） ∩ L^2（R）,则Cauchy问题存在惟一的整体光滑解 u∈C^∞（（0,T] ;H^∞（R）） ∩ C（[0,T] ;H^2（R）） ∩ C^1（[0, T] ;L^2（R）） ．利用凸性方法,证明了相应的Cauehy问题在空间C^∞（（0,T] ;H^∞（R））∩C（[0,T] ;H^2（R））∩C^1（[0,T] ;L^2（R））中不存在整体广义解。     

含Zn,Ag或Sc的Al-Li-Cu-Mg-Zr合金正电子寿命谱研究

在深低温到室温的不同温度下，测量了不同时效状态的Ａｌ－Ｌｉ－Ｃｕ－Ｍｇ－Ｚｒ合金和含Ｚｎ，Ａｇ或Ｓｃ的Ａｌ－Ｌｉ－Ｃｕ－Ｍｇ－Ｚｒ合金的正电子寿命谱，对ｅ＾＋寿命谱特征参数的分析表明，峰值时的使热空位大量回复，缺陷的数目减少，在深低温下，空位主要以单空位形式存在且随温度升高而激活运动复合成多空位，Ｚｎ或Ａｇ的加入对空间的运动复合有束缚作用，而Ｓｃ却有助于空位的运动复合，所有实验样品低温下基体电子密     

First-principles exploration of the stabilization mechanism of long-period stacking ordered structures in high performance Al alloys

Long-period stacking ordered(LPSO) structures, like 9 R, 12 R, 15 R and 18 R phases etc., play a key role in improving the mechanical properties of Al alloys. In the present study the Gaussian-Like distribution(GLD)model was utilized to investigate the effects of solute atoms(Cu, Fe, Ga, Ge, Li, Mg, Sc, Si, Sn, Sr, Ti, Y, Zn) on these phase stabilizations in Al alloys by first-principles calculations. The interaction energies between solute atoms and these phases were strictly calculated. The results suggested that the solute segregations showed different characteristics in these phase structures, and solute atoms(Ga, Ge, Si, Sn, Sr, Y) tended to segregate to the stacking fault(SF) planes of them, and Sr atom was the easiest to promote the stabilization of 15 R phase compared to other structures. High solute concentrations promoted the stabilizations of these phases, while high temperature inhibited their stabilizations. In the light of the degrees of reducing the intrinsic stacking fault energies(ISFEs), the solute atoms can be ranked by:(a) For 9 R and 12 R phases, Sr Y Sn Sc;(b) For15 R and 18 R phases, Sr Y Sc Sn. Thus, it may be concluded that Sr and Y atoms are hopeful to become the underlying candidates for exploring and exploiting high-performance Al alloys with LPSO structures.     

Investigation on high magnetoresistance Ni0.81Fe0.19 films grown on （Ni0.81Fe0.19）1-xCrx underlayers

We have fabricated Ni0.18Fe0.19 films with (Ni0.18Fe0.19)1-xCrx films as underlayers by dc magnetron sputtering, the results show that larger anisotropic magnetoresistance (△R/R) values of Ni0.18Fe0.19 films are observed using the underlayers with Cr concentration of -36 at.% at an optimum underlayer thickness of -4.4 nm, the maximum AMR value is 3.35%. The results of atomic force microscope (AFM) and X-ray diffraction (XRD) show that the △R/R enhancement is attributed to the formation of large average grain size and the strong(111)texture in the Ni0.18Fe0.19 films.     

一类奇异二阶阻尼差分方程周期边值问题正解的存在性

研究了一类奇异二阶阻尼差分方程周期边值问题{Δ²x(t-1)+αΔx(t-1)+βx(t)=f(t,x(t), Δx(t-1)), t∈［1,T］_Z,x(0)=x(T), Δx(0)=Δx(T)正解的存在性,其中T >2是一个整数, α、 β均为常数, f(t,x,y):［1,T］_Z×(0,∞)×R→R关于(x,y)∈(0,∞)×R连续且允许f在x=0处奇异即lim_x→0⁺ f(t,x,y)=+∞,(t,y)∈［1,T］_Z×R。主要结果的证明基于Leray-Schauder非线性抉择。     

部份熔融YBCO超导体的载流特性

通过高温短时间处理,获得不同程度的晶界熔融态的YBCO超导块状试样。研究表明,部份熔融使试样体积收缩6％时,临界电流密度可提高26％。测量了在不同磁场强度变化率H(从1.3Oe/s至500Oe/s)时试样的磁阻曲线R(H)。发现R(H)曲线随H的增大而增大,在某一H值处产生拐点:在拐点之前d~2R(H)/dH~2>0,R(H)随H增加而增大;在拐点之后,d~2R(H)/dH~2<0,H对R(H)影响不大。R(H)曲线的拐点对应的磁场相当于下临界场Hcl。     

Cu doping effect on Mn sites of La2/3Ca1/3 MnO3 system

The temperature dependence of resistance and magnetoresistance at 77 K for Cu-doped La 2/3Ca 1/3Mn 1-xCu xO-3 have been investigated. Besides the transition similar to the Cu-free sample at ～260 K, a new transition at lower temperature appears for Cu-doped samples. The new transition moves toward low temperature with increasing of Cu content. A new conductive proceeding related to Cu ion may exist. Magnetoresistance at liquid nitrogen shows that MR increased three orders when x is changed from 0 to 0 15. Moreover, the main variation of magnetoresistance is below the field of 1 T.     

二阶奇异耦合系统正周期解的存在性

Using Schauder's fixed point theorem, we study the existence of positive periodic solutions for second order non-autonomous singular coupled systems where a_i, e_i∈L¹(R/TZ, R), f_i∈Car(R/TZ×(0,∞), R), that is, f_i|_[0,T]:[0,T]×(0,∞)→R are L¹-Carathéodory functions(i=1, 2), and f₁, f₂ may be singular at y=0, x=0, respectively. The existence of positive periodic solutions for the singular coupled systems are obtained under the conditions that the signs of integral disturbance terms are positive, or negative, or different.     

La位Dy3+的替代对(La1-x Dyx)0.67 Ca0.33 MnO3传输性质的影响

在La0.67Ca0.33MnO3中用Dy对La进行了部分替代,随替代量增加,材料的居里温度和金属-绝缘体相变温度单调下降,峰值电阻率单调增加,磁电阻比急剧增大。这些变化可以用稀土离子平均直径的减小和自旋团簇模型来解释。Dy掺杂引起的磁结构变化将导致CMR效应。     

Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3／SrNb0.01Ti0.99O3

We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. The I-V characteristics of the LSMO/SNTO p-n junctions as a function of applied magnetic field (0—5 T) were studied between 100 and 300 K. We found that the p-n junction exhibited the CMR behavior. The CMR ratio △R/R0 (△R = RH - R0) is positive in magnetic fields below 0.13 T and at high temperature, while it displays a negative CMR near 100 K and in magnetic fields over 0.13 T. The CMR ratio values are 8% at 0.1 T and 13% at 5 T and 300 K, 40% at 0.1 T and 150 K, 10% at 0.13 T and -60% at 5 T and 100 K. The CMR behavior of the p-n junction is different from those of the LaMnO3 compound family.     

铁磁/绝缘层/有机半导体/铁磁多层膜隧道结的隧穿磁电阻的温度和偏压特性研究

采用Slonczewski的近自由电子模型, 利用转移矩阵的方法, 研究了铁磁/绝缘层/有机半导体/铁磁隧道结的自旋极化载流子隧穿的温度和偏压特性. 计算了T=4 K和T=300 K时, 隧穿磁电阻(Tunneling Magnetic Resistance, TMR)随偏压的变化关系, 同时还研究了零温时在有限偏压下隧穿磁电阻TMR与绝缘层厚度、有机半导体层厚度以及铁磁/有机半导体界面势垒U的变化关系. 我们的计算结果较好地解释了有关的实验 结论.     

复合体系AgδLa0.60Sr0.40-xAgx-δMnO3的磁电阻效应

采用溶胶-凝胶法(sol-gel)制备了名义组分为AgδLa0.60Sr0.40-xAgx-δMnO3的多晶样品.研究发现,用Ag+替代Sr2+后,样品的居里温度降至室温附近,并且室温磁电阻比替代前明显增大.在1.8T的磁场下,x=0.30的样品在289K时,Rm=17.0%,因此提高了室温时样品的磁电阻.