Cu层厚度对NiFe/Cu/Co 的巨磁电阻效应影响

用磁控射频溅射法制备了NiFe/Cu/Co多层膜;研究了薄膜的磁特性和磁电阻特性与中间层Cu厚度的关系.在适当的Cu层厚度下 (大约为2 nm),制备出了具有很好自旋阀巨磁阻效应的多层膜.研究表明,在弱磁场下,薄膜的磁电阻回线的斜率与原来的磁化过程有关,因此该薄膜材料可以用于巨磁电阻存储器中.     

铁磁/半导体/铁磁异质结中电子的自旋翻转及磁电阻效应

考虑半导体中自旋轨道耦合作用的自旋翻转效应及铁磁半导体边界处的界面势垒作用,研究了自旋极化电子在准一维铁磁/半导体/铁磁(F/S/F)异质结中的输运行为.数值结果表明,随着界面势垒的增大能够实现电子自旋的翻转.随着两边铁磁体磁化方向夹角的变化,磁电阻在夹角为π处出现正负转变,而且磁电阻正负值的绝对值关于夹角π不对称,这些现象均起源于Rashba自旋轨道耦合作用而不是Dresselhaus自旋轨道耦合作用.与Dresselhaus自旋轨道耦合作用相比,Rashba自旋轨道耦合作用更能增大磁电阻效应.     

FeCo-SiO_2颗粒膜的磁性和隧道磁电阻效应研究

用射频共溅射的方法制备了不同金属含量φ的 Fe- Si O2 金属 -绝缘体颗粒膜 ,系统研究了薄膜的微结构、磁性以及隧道磁电阻 ( TMR)效应 .在φ=0 .33处得到最大磁电阻比 RTMR为- 3. 3% .在同样的制备条件下保持φ =0 . 33,用 Co 取代 Fe 得到一系列的( Fe10 0 -x Cox) 0 .33( Si O2 ) 0 .67的颗粒膜 .对其 TMR的研究发现在 x =53时得到最大的磁电阻比为 -4 .3% ,且 Co对 Fe的替代基本没有影响薄膜的微结构 .由 Inoue关于隧道磁电阻效应的理论得到的自旋极化率 P和 Co的原子百分数 x的关系曲线和实验测得的 RTMR ～ x曲线具有相似的变化趋势 .表明在 Fe Co- Si O2 膜中由于磁性颗粒自旋极化率 P的提高而使 RTMR 变大 .这也和基于第一原理的线性缀加平面波方法得到的理论计算结果一致 .     

热处理对Ta/Ni0.65Co0.35薄膜微结构和磁电阻性能的影响

选用磁致伸缩系数接近于零的软磁合金Ta/Ni0.65Co0.35作为磁敏感层,研究了热处理对Ta/Ni0.65Co0.35薄膜织构、磁学性能和磁电阻性能的影响.制备了Barber电极结构的磁电阻元件,对磁电阻元件的输出特性进行了测试.结果表明:真空退火可以有效降低薄膜内的应力和杂质缺陷,使晶粒尺寸增大,晶界对传导电子的散射减少,各向异性磁电阻(AMR)值提高;真空磁场退火有利于提高薄膜的单轴各向异性,使薄膜的AMR值和磁传感器元件的灵敏度增加.     

Cu低掺杂对La0.7Ca0.3MnO3电阻及磁电阻的影响

用溶胶凝胶法制备了Cu低掺杂的La0.7Ca0.3Mn1-xCuxO3(x=0%,1%,2%,3%,4%,5%)系列多晶材料.采用振动样品磁强计测量了系列样品的热磁曲线并获得了相应的居里温度,实验结果表明居里温度随着Cu掺杂量的增加而减少.在77~350 K温度范围内测量了样品的电阻和磁电阻,结果表明样品电阻率与温度的关系均具有明显的电阻峰结构.当x=5%时,开始出现双电阻峰结构;掺杂量x为1%,2%,3%,5%的样品在外场为0.4 T时存在较大的磁电阻极大值,分别为30.5%,25.4%,22.4%,18.8%,均大于未掺杂(x=0%)的13.5%.双交换(DE)模型简单地解释了Cu低掺杂对电阻及磁电阻行为的影响.     

退火处理对Dy4(Co21Cu79)96颗粒膜结构和巨磁电阻效应的影响

采用磁控溅射法制备Dy₄(Co₂₁Cu₇₉)₉₆颗粒膜,研究薄膜的巨磁电阻（GMR）效应及磁性能.应用X射线衍射仪（XRD）对薄膜微观结构随退火温度的变化进行分析,采用四探针及振动样品磁强计（VSM）测量薄膜的磁电阻和磁性能.X射线衍射实验结果表明:制备态的薄膜形成了单相亚稳态面心合金结构,退火处理将促进Cu和Co的相分离.磁电阻测试发现:所有不同成分的Dy_x(Co₂₁Cu₇₉)_100-x（x=0,4,8,9,12,14）薄膜样品均随着退火温度的升高,颗粒膜巨磁电阻（GMR）效应不断增大,当达到最佳退火温度之后,GMR值又随退火温度的升高而降低.当退火温度为425℃时,Dy₄(Co₂₁Cu₇₉)₉₆薄膜的巨磁电阻效应达到最大,GMR值为-4.68%.退火前后样品磁滞回线的变化表明薄膜中发生了从超顺磁性到铁磁性的转变,矫顽力H_c随退火温度的升高逐渐增大.     

多通道铁磁纳米线中的自旋极化和磁电阻

利用散射矩阵理论,研究了多通道纳米线结构中的量子化电导、自旋极化和弹道磁电阻.结果表明:在铁磁排列时,自旋简并解除,量子化电导以e2/h为单位变化,自旋极化率可以达到33%;随着纳米线宽度的减小,弹道磁电阻增长迅速;当线细到只有一种自旋态电子通过时,磁电阻达到无穷大,其自旋极化率为100%.     

颗粒间隧穿体系H-A模型的磁电阻翻转效应

基于HELMAN-ABELES模型,超越传统的一级近似,对磁场相关库仑阻塞下体系的磁输运性质进行了系统的理论分析.我们发现,磁场相关的库仑能隙将引起低温下的正磁电阻发散行为,该行为与自旋极化引起的低温负磁电阻相互竞争,使体系的宏观磁电阻随参数的区域变化呈现出复杂的特征.我们分析了该正磁电阻出现的根本原因,从而指出影响磁电阻的因素除了传统的自旋极化率之外,还有与之效果相反的自旋相关库仑能隙的作用,后者为颗粒体系中的磁电阻效应提供了新的可能来源.     

La0.67Ca0.33MnO3/Zn0.95Co0.05O复合材料的输运特性

用溶胶凝胶法制备了Zn0.95Co0.05O包覆的La0.67Ca0.33MnO3 (LCMO) 纳米复合材料,研究了包覆材料对磁电阻性能的影响.实验结果表明,Zn0.95Co0.05O的表面包裹(修饰)大幅度增强了复合材料的磁电阻值;低场和高场下以及不同的温度区域内磁电阻有着不同的温度和磁场效应,意味在不同温区具有不同的磁电阻机制;采用低温隧穿磁电阻效应和逾渗模型较好地解释了实验结果.     

La_(1-x)Ag_xMnO_3多晶非均匀颗粒系统的巨磁电阻效应

采用固相烧结法制备了名义成分为La1 xAgxMnO3(0≤x≤ 0 .50 )的大块多晶样品 ,并且首次研究了它们的巨磁电阻效应 .分析表明 :当x≤ 0 .2 5时 ,样品基本上由单一的钙钛矿结构相组成 ;当x >0 .2 5时样品明显由两相组成 ,钙钛矿结构相和富Ag合金相 .它们组成了一个非均匀的颗粒系统 .在x =0 .30时 ,具有高达 2 5.5%的巨磁电阻效应 .非均匀颗粒系统呈现的磁电阻效应与电子在两相颗粒界面的自旋相关散射有关 .     

GIANT MAGNETORESISTANCE EFFECTS IN Co／Cu （111） SUPERLATTICE

We present a spin-dependent scattering theory to explain the new type of magnetoresistance effect and magnetization in Co/Cu(111) su-perlattice with atomically smooth interfaces. Our model is simple, but the calculated results are consistent with the experimental ones.     

具有垂直各向异性的Co/Pt多层膜中各Co层之间铁磁性耦合

使用磁控溅射法制备了一系列具有不同Pt中间层厚度的glass/NiO(1.nm)/[Co(0.4.nm)/Pt(0.5.nm)]3/Pt(xnm)/[Co(0.4.nm)/Pt(0.5.nm)]3样品并对Co层之间的铁磁性耦合强度进行了测量.整体磁滞回线和局部磁滞回线的测量结果表明,上下两层Co/Pt多层膜之间的铁磁性耦合强度随着Pt中间层厚度的增加单调减小,当Pt中间层厚度超过4.nm时铁磁性耦合消失.除了上下两层Co/Pt多层膜之间通过Pt中间层产生的铁磁性耦合作用之外,它们之间也存在弱的次耦合作用,这导致底层出现宽的磁滞.     

Enhancement of magnetism of Zn0.95Co0.05O films by p-type Cu+ doping

Organic solar cells withμ-oxo-bridged gallium phthalocyanine dimer(GaPc dimer) and fullerene were produced by an evaporation method.A device based on the GaPc dimer provided a conversion efficiency of 4.2×10~(-3)%,which is better compared to a device based on phthalocyanine monomer.Dimerization effect was discussed with a molecular orbital calculation,and the crystalline phases of the present solar cells were investigated by X-ray diffraction.Further improvement of the efficiency was discussed on the bas...     

Cu对WC-Fe/Co/Ni合金组织和性能的影响

研究了添加元素Cu及其含量对WC-Fe/Co/Ni合金组织和性能的影响。结果表明,当Cu添加较少时,合金的抗弯强度随Cu含量的增加而提高,当Cu含量增加到0.8％时,合金的抗弯强度出现极大值;继续增加Cu的含量,合金的抗弯强度又下降。并对组织结构进行了分析。     

Modulation structure stability of heat-treated Co/C and CoN/CN soft X-ray multilayers

Modulation structure stability of Co/C and CoN/CN soft X ray multilayers has been investigated by X ray diffraction and Raman spectroscopy. The graphitization of the amorphous carbon layers in Co/C multilayers causes a period expansion of 12% at annealing temperatures below 400℃. An enormous period expansion (～40%) induced by the crystallization and agglomeration of Co layers has been observed at 500℃. While the period expansion of CoN/CN multilayers is only 4% at 400℃. The interface pattern of the CoN/CN multilayers still exists even if they were annealed at 700℃. The relatively good thermal stability of CoN/CN multilayers can be attributed to the suppression of the formation of the sp 3 bonding and, at annealing temperatures higher than the phase transition temperature of 420℃ (from hcp to fcc), the coexistence of hcp and fcc Co structures through doping nitrogen.     

Chemical states of the atoms in magnetic multilayersTa/NiOx/Ni81Fe19/Ta and Co/AlOx/Co

Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm.     

Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions

Magnetic tunnel junctions (MTJs), as the seminal spintronic devices, are expected for applications in magnetoresistive sensors due to their large magnetoresistance (MR) and high field sensitivity. Two hybrid Co/insulator/ZnO:Co junctions were fabricated with two different barriers to investigate the magneto-transport properties. Experimental results indicate that, both Co/MgO/ZnO:Co and Co/ZnO/ZnO:Co junctions show the positive and nearly linear MR, and their tunnel magnetoresistances (TMR) are 21.8% and 13.6%, respectively, when the current is applied perpendicular to the film plane under the magnetic field of 2 T at 4 K. The nonlinearity of MR is less than 1% within the magnetic field (H) of 1 kOe < H < 12 kOe at low temperature, making them attractive as magnetoresistive sensors. The higher MR of Co/MgO/ZnO:Co junctions is due to the superior spin filtering effect and larger effective barrier height of the MgO barrier. This linear MR characteristic of Co/insulator/ZnO:Co structures shows a promising future on the applications of diluted magnetic semiconductors in magnetoresistive sensors.     

Co-Cu-B催化剂用于糠醛液相加氢制糠醇

用KBH4还原CoCl2和CuCl2混合溶液制得Co-Cu-B催化剂，用于糠醛液相选择性加氢制糠醇，研究了不同Cu掺入量对催化剂性能的影响，发现当Cu：Co的摩尔比（X）为9．64×10^-3时，催化活性达到最佳．在反应1．5h后，糠醛的转化率为100％，对糠醇的选择性为100％．同时发现，随着Cu含量升高，催化剂活性显著下降，并通过催化剂的一系列表征，如XRD，XPS，TEM，ICP等，初步讨论了催化性能与催化剂结构，电子态的相互关系．     

钴掺杂Mn3O4作为模板制备锂离子电池正极LiMn2O4

以水热合成的钴掺杂Mn₃O₄作为模板,通过固相反应制备尖晶石LiMn₂O₄。XRD谱图和SEM照片显示制备的LiMn₂O₄具有岩石状结构并呈现良好的结晶性,同时Co的引入能够引起LiMn₂O₄晶格的收缩。作为锂离子电池正极材料,Co含量的增加能够提高循环稳定性但降低材料放电比容量,3% Co掺杂的LiMn₂O₄在0.5 C的电流密度下,经过100次循环后,剩余放电比容量达101.6 mAh·g^-1;在10 C的电流密度下,放电比容量可维持在81.0 mAh·g^-1,优于未掺杂的LiMn₂O₄。这是由于Co的引入能够稳定LiMn₂O₄晶体结构并抑制循环中的姜-泰勒扭曲。     

Chemical states of the atoms in magnetic multilayers Ta/NiO x /Ni81Fe19/Ta and Co/AlO x /Co

Ta/NiO _x /Ni₈₁Fe₁₉/Ta and Co/AlO _x /Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (H _ex) and the coercivity (H _c) of NiO _x /Ni₈₁Fe₁₉ as a function of the ratio of Ar to O₂ during the deposition process were studied. The composition and chemical states at the interface region of NiO _x /NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O₂ is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiO _x is antiferromagnetic NiO and the corresponding H_ex is the largest. As the ratio of Ar/O₂ deviates from 7, the H _ex will decrease due to the presence of magnetic impurities such as Ni⁺³ or metallic Ni at the interface region of NiO _x /NiFe, while the H _c will increase due to the metallic Ni. Al layers in Co/AlO _x /Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AlO _x was 1.2 nm.