Co－（Cu，Ni）－B体系非晶态合金的制备及其热稳定性

用化学法制备了Ｃｏ－Ｂ、Ｃｏ－Ｃｕ－Ｂ及Ｃｏ－Ｎｉ－Ｂ非晶态合金，电子衍射表明合金为非晶，透射电镜证实合金是粒径约２０ｎｍ的球状颗粒。以示差量热法及Ｘ衍射分析研究了非晶态合金的热稳定性、晶化激活能及晶化行为。结果表明：激活能数据能从能量角度解释Ｃｏ－Ｂ热稳定性高于Ｃｏ－Ｃｕ（Ｎｉ）－Ｂ；非晶态合金的晶化过程是随处理温度升高而逐步进行的。     

C，Si在CO－CO_2－SiO气体与Fe－Si－C合金间迁移平衡与pCO_2

通过评价和优化有关热力学数据，利用冶金物理化学原理建立了钢铁冶金中最为重要的Ｆｅ－Ｓｉ－Ｃ三元体系与ＣＯ－ＣＯ２－ＳｉＯ混合气体间硅、碳迁移的热力学数学模型，计算了相关热力学数据并计算机绘制了该体系的ｐＣＯ２－ｐＳｉＯ和ｌｇｐＣＯ２－ｌｇｐＳｉＯ相平衡图。该模型的可靠性在１８７３Ｋ高温条件下的一系列平衡实验中得到了检验     

An／C_（60）－Polymer／P－Si结构C－V特性

报道了利用ＰＥＣＶＤ技术在Ｐ－Ｓｉ衬底抛光面上淀积含Ｃ６０聚合物薄膜及在薄膜表面蒸金形成Ａｎ／Ｃ６０－Ｐｏｌｙｍｅｒ／Ｐ－Ｓｉ结构．通过常温及温偏处理后的不同Ｃ－Ｖ特性，推算了聚合物薄膜中的几种电荷密度和介电常数，并对经过温偏处理后Ｃ－Ｖ曲线的畸变做了讨论．     

2－羟基－3－羧基－5－磺酸基苯重氮氨基偶氮苯与阳离子表面活性剂显色反应的研究

研究了溴化十六烷基三甲胺（ＣＴＭＡＢ）、溴化十六烷基吡啶（ＣＰＢ）、氯化十六烷基吡啶（ＣＰＣ）、氯化十四烷基二甲基苄基胺（Ｚｅｐｈ）等四种阳离子表面活性剂（ＣＳＦ）与２－羟基－３－羧基－５－磺酸基苯重氮氨基偶氨苯（ＨＣＳＤＡＡ）的显色反应。＂在ＴｒｉｔｏｎＮ－１０１存在下和ｐＨ１１．３～１２．１的缓冲介质中，各种ＣＳＦ均与ＨＣＳＤＡＡ形成摩尔比为１：１的紫色离子缔合物，其最大吸收波长是５８５ｎｍ，对比度为１５４ｎｍ，在３２～４０℃时表观摩尔吸光系数都为４．０×１０３Ｌ·ｍｏｌ－１·ｃｍ－１。ＣＳＦ在２×１０－６～１．０×１０－４ｍｏｌ／Ｌ范围内服从比尔定律。在ＥＤＴＡ的掩蔽作用下，大量常见离子对反应不干扰。可望用于阳离子型和阴离子型表面活性剂的分析。     

Fe－P－N合金的Snoek－K－Koster峰

对淬火及淬火后变形Ｆｅ－Ｐ－Ｎ合金在－５０℃～３５０℃温度区的内耗进行了测量，并用ＴＥＭ观察、分析了合金中的第二相．结果表明，在Ｎ的质量分数不超过０．００３％和Ｐ的质量分数小于０．０６４％的实验条件下，合金的ＳＫＫ峰与Ｓｎｏｅｋ峰的峰高比（ｈＳＫＫ／ｈＳｓ）和Ｃｐ－２／３呈线性关系；在Ｆｅ－Ｐ合金固溶体区中有ＦｅＰ化合物存在．     

1，4－二钠－1，1，4，4－四苯基丁烷加合物的合成与表征

用１，４－二钠－１，１，４，４－四苯基丁烷在乙醚中分别与四氢呋喃（ＴＨＦ）和１，２－二乙氧基乙烷（ＤＥＥ）反应，合成了两个未见报道的、对空气和湿气极为敏感的１，４－二钠－１，１，４，４－四苯基丁烷加合物（Ｃ６Ｈ５）２ＣＮａＣＨ２ＣＨ２ＣＮａ（Ｃ６Ｈ５）２·ｎＬ（Ｌ＝ＴＨＦ．ｎ＝８；Ｌ＝ＤＥＥ，ｎ＝６）加合物均经元素分析、红外光谱、质谱及氢核磁共振谱鉴定．     

N－酰基－（R）－四氢噻唑－2－硫酮－4－羧酸乙酯的合成

在三乙胺存在下，使ＲＣＯＣｌ与（Ｒ）－四氢噻唑－２－硫酮－４－羧酸乙酯反应，得到相应的标题化合物ａ～ｆ，它们的［α］Ｄ分别为十１．４３，＋７．８，＋１．３１，－１１０．８，－４３．０，－４９．７９．实验可见，Ｒ为芳基的标题化合物的旋光度的绝对值较Ｒ为脂肪基的标题化合物的旋光度低．     

含Zn，Ag或Sc的Al－Li－Cu－Mg－Zr合金正电子寿命谱研究

在深低温到室温的不同温度下，测量了不同时效状态的Ａｌ－Ｌｉ－Ｃｕ－Ｍｇ－Ｚｒ合金和含Ｚｎ，Ａｇ或Ｓｃ的Ａｌ－Ｌｉ－Ｃｕ－Ｍｇ－Ｚｒ合金的正电子寿命谱。对ｅ＋寿命谱特征参数的分析表明：峰值时效使热空位大量回复，缺陷的数目减少。在深低温下，空位主要以单空位形式存在且随温度升高而激活并运动复合成多空位。Ｚｎ或Ａｇ的加入对空位的运动复合有束缚作用，而Ｓｃ却有助于空位的运动复合。所有实验样品低温下基体电子密度都比室温的高，δ＇相析出长大使合金基体的电子密度提高，而Ｓ＇相析出则使合金基体的电子密度降低。Ｚｎ，Ａｇ或Ｓｃ的加入都增加了基体电子密度，有利于合金强度的提高。     

单－6－（咪唑－1－基）－β－环糊精的合成

由β－ＣＤ—ＯＴｓ或β－ＣＤ－Ｉ在ＤＭＦ中，和过量咪唑反应，合成了单－６－（咪唑－１－基）－β－环糊精（简称β－ＤＣ－Ｉｍ）．产率较高，分别为６０％和６２％．并对化合物的结构进行了ＴＬＣ、ＩＲ、ＵＶ、１ＨＮＭＲ及元素分析等确证．其中ＵＶ数据未见文献报道．     

4，4－二氯－8，11－二甲氧基三环［5，4，0，0~（3，5）］十一碳－7，9，11－三烯的合成及光谱性质

本文报导４，４－二氯－８，１１－二甲氧基三环［５，４，０，０~（３，５）］十一碳－７，９，１１－三烯的合成．用元素分析确定其分子组成为Ｃ_（１３）Ｈ_（１４）Ｏ_２Ｃｌ_２．测定并讨论其质谱，~１Ｈ和~（１３）Ｃ核磁共振谱．     

Preparation of CoP films by ultrasonic electroless deposition at low initial temperature

Electroless deposition technology has been considered as a kind of common ways to obtain cobalt alloy films. However, in order to get cobalt alloy films, high temperature(353 K) is necessary during the electroless deposition process which will increase costs and energy consumption. Ultrasonic was introduced during electroless plating process to obtain cobalt alloy films at lower initial temperature. It was found that the cobalt thin films could be prepared at lower initial temperature(323 K) with the introduction of ultrasonic. Therefore, different powers of ultrasonic were applied during the electroless deposition process to prepare CoP thin films on copper substrates from an alkaline bath in this investigation. The effects of different powers of ultrasonic on deposition rate, surface morphology, anticorrosion performance and magnetic property of films were studied. It was found that the deposition rate increased gradually with the rise in ultrasonic powers due to cavitation phenomenon. All the CoP films presented the typical spherical nodular structures with the impact of ultrasonic. Smaller and regular shaped structures could be observed when the films were deposited with higher power of ultrasonic which contributed directly to enhancement of anticorrosion performance. Saturation magnetization and coercivity of thin films increased gradually with the rise in ultrasonic powers during the electroless deposition process due to the higher amounts of cobalt.& 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.     

丙酮对金刚石膜生长速率的影响

采用灯丝热解化学气相沉积方法，在不同的碳源气体气氛中合成金刚石薄膜，并研究不同工艺条件下的金刚石膜生长速率．结果表明，在较低的灯丝分解气体温度和较近的灯丝与衬底距离条件下，以丙酮为碳源气体合成的金刚石膜具有较高的生长速率和较好的质量．     

Preparation and thermoelectric properties of p-type Bi0.52Sb1.48Te3 + 3% Te thin films

Thin films of p-type Bi0.52Sb1.48Te3 + 3% Te were deposited on glass substrates by flash evaporation.X-ray diffraction and field-emission scanning electron microscopy were performed to characterize the thin films,and the effects of preparation and annealing parameters on the thermoelectric properties were investigated.It was shown that the power factors of the films increased with increasing deposition temperature.Annealing the as-deposited films improved the power factors when the annealing time was less than 90 min and the annealing temperature was lower than 250℃.A maximum power factor of 10.66 μW cm-1 K-2 was obtained when the film was deposited at 200℃ and annealed at 250℃ for 60 min.     

Tailoring of microstructure and martensitic transformation of nanocrystalline Ti–Ni-Hf shape memory thin film

The amorphous Ti-Ni-Hf thin films with the specific compositions were prepared from single Ti-Ni-Hf alloy target by adjusting processing parameters of direct current magnetron sputtering deposition. Prior to the crystallization,a glass transition occurred in the present Ti-Ni-Hf thin films. The annealed Ti-Ni-Hf thin films were characterized by the nano-crystalline. With the annealing temperature increasing, the grain size firstly increased and then decreased owing to the presence of(Ti,Hf)_2Ni precipitate. Two endothermic and exothermic peaks corresponding to B19'■B2 martensitic transformation in heating and cooling curves were observed for the Ti-Ni-Hf thin films with the lower annealing temperature and shorter annealing time, which was closely related to the inhomogeneous composition. However, the Ti-Ni-Hf thin films annealed at higher annealing temperature and longer annealing time showed the single stage B19'■B2 martensitic transformation. In addition, the martensitic transformation temperatures firstly increased and then decreased with the annealing temperatures rising.     

Influence of Ag content on the microstructure,mechanical, and tribological properties of TaVN-Ag films

A series of TaVN-Ag nanocomposite films were deposited using a radio-frequency magnetron sputtering system. The microstructure, mechanical properties, and tribological performance of the films were investigated. The results showed that TaVN-Ag films were composed of face-centered cubic (fcc) TaVN and fcc-Ag. With increasing Ag content, the hardness of TaVN-Ag composite films first increased and then decreased rapidly. The maximum hardness value was 31.4 GPa. At room temperature, the coefficient of friction (COF) of TaVN-Ag films decreased from 0.76 to 0.60 with increasing Ag content from 0 to 7.93at%. For the TaVN-Ag films with 7.93at% Ag, COF first increased and then decreased rapidly from 0.60 at 25℃ to 0.35 at 600℃, whereas the wear rate of the film increased continuously from 3.91×10-7 to 19.1×10-7 mm3/(N·mm). The COF of the TaVN-Ag film with 7.93at% Ag was lower than that of the TaVN film, and their wear rates showed opposite trends with increasing temperature.     

水化学和腐蚀温度对锆合金氧化膜中压应力的影响

在不同水化学条件下,对Zr-4和N18管状样品进行腐蚀实验,然后用氧化膜卷曲法测量腐蚀样品氧化膜中的压应力,研究腐蚀温度、水化学对氧化膜中压应力随厚度变化的影响规律.实验结果表明,Zr-4和N18样品氧化膜中的压应力均按360℃去离子水>400℃过热蒸汽>360℃L iOH水溶液的顺序依次减小.在360℃L iOH水溶液中腐蚀时,氧化膜中的压应力最低,这与L i+和OH-会渗入氧化膜,降低氧化锆表面自由能,从而加速氧化膜中空位的扩散凝聚、孔隙的形成和微裂纹发展的过程有关.高温使空位的扩散加快,促进了氧化膜中压应力的弛豫过程.     

缓冲气体对激光烧蚀制备掺 Er 纳米 Si 晶薄膜结构特性的影响

采用 XeCl 脉冲准分子激光器,保持激光脉冲比为1:3,分时烧蚀Er靶和高阻抗单晶Si靶,在10 Pa的Ne气环境下沉积了掺Er非晶Si薄膜. 在氮气保护下,分别在1 000℃,1 050 ℃和1 100℃温度下进行30 min热退火处理. 对所得样品的Raman谱测量证实,随着退火温度的升高,薄膜的晶化程度提高;利用扫描电子显微镜观测了所制备的掺Er纳米Si晶薄膜的表面形貌,并与相同实验参数、真空环境下烧蚀并经热退火的结果进行了比较. 结果表明,Ne气的引入,使形成轮廓明显的掺Er纳米Si晶粒的退火温度降低,有利于尺寸均匀的晶粒的形成.     

W离子注入VO2薄膜结构及红外发射性能研究

探讨了低剂量离子注入技术对VO₂薄膜的结构和红外发射性能的影响,发现1×1015 cm?2注量的W离子注入掺杂时,会对VO₂薄膜的晶体结构产生一定的损伤;经400 ℃退火处理后部分恢复了薄膜的单斜相晶体结构,且退火处理后,在掺杂W离子、结构缺陷和氧空位的共同作用下,掺杂量0.12%即可使VO₂薄膜的相变温度降低8.9 ℃;掺杂原子数量每增加1%,其相变温度相应变化74.2 ℃;W离子注入并经退火处理后,VO₂薄膜的红外发射率为0.35～0.46,其在低温区间的红外发射率相比未注入薄膜降低了0.14,这大幅度提高了VO₂薄膜在低温区的红外隐身性能．      

ZnO:Al透明导电薄膜的制备及其光电性能的研究

利用溶胶-凝胶法在石英衬底上制备Al3+掺杂ZnO薄膜,研究了Al3+掺杂对ZnO薄膜微结构和光学性能的影响.XRD测量结果表明,Zn1-xAlxO薄膜具有六角纤锌矿结构,晶格常数随着Al掺杂浓度的增加而减小;紫外-可见透射光谱(UV)表明,所有薄膜在可见光区的透过率均超过80%;光致发光谱研究发现,随着Al掺杂浓度的增加ZnO的吸收带边发生蓝移,XRD和光学性能研究都证实了ZnO薄膜中的Al3+是以替位式形式存在于晶格中.     

γ′-Fe4N薄膜的制备及其磁性

采用直流磁控溅射方法, 以Ar/N₂为放电气体（N₂/(Ar+N₂)=10％）, 在玻璃和NaCl(100)单晶片上分别沉积获得Fe-N薄膜样品. 利用X射线衍射(XRD)、 原子力显微镜(AFM)和超导量子干涉仪(SQUID)对样品的结构、 形貌和磁性能进行分析, 研究基片和基片温度等条件对薄膜的影响. 结果表明, 以NaCl单晶为基片获得单相γ′-Fe₄N薄膜, 与玻璃基片相比可降低其生成的基片温度并可扩大形成温度的范围, 且比饱和磁化强度略有增大. 