High heat loading performance of actively cooled W/Cu FGM-based components

A functionally graded material-based actively water-cooled tungsten-copper mockup with a dimension of 30 mm×30 mm×25 mm was designed and fabricated by infiltration-brazing method. The thicknesses of the pure W layer and W/Cu graded layer were 2 and 3 mm, respectively. High heat flux tests were performed on the mockup using an e-beam device. There is no damage occurring on the joint after heat loading at 5 MW/m2. The temperature on the pure W surface is less than 500℃ after irradiation for 100 s at 5 MW/m2, while the temperature on the brazing seam/copper surface is around 200℃.     

Grain size-dependent electrical resistivity of bulk nanocrystalline Gd metals

The electrical resistivity of the as-consolidated and coarse-grained bulk gadolinium(Gd) metals was studied in the temperature range of 3-315K.The experimental results showed that with decrease in the grain size of Gd grains from micrometer to nanometer range,the room temperature electrical resistivity increased from 209.7 to 333.0 μΩcm,while the electrical resistivity at the low temperature of 3K was found to increase surprisingly from 16.5 to 126.3 μΩcm.The room temperature coefficient resistivity(TCR) values were obtained as 39.2×10-3,5.51×10-3 and 33.7×10-3K-1.The ratios of room temperature to residual resistivity [RRR=ρ(300K)/ρ(3K)] are 2.64,11.0,respectively,for the as-consolidated samples at 280℃ and 700℃ with respect to that of the coarse-grained sample.All results indicate the remarkable influence of the nanostructure on the electrical resistivity of Gd due to the finite size effect and large fraction of grain boundaries.     

Structure and magnetic properties of ZnO:Cr prepared by Cr ion implantation into ZnO crystals

ZnO:Cr layer was prepared by Cr ion implantation into ZnO bulk crystals. The structural, optical, and magnetic properties of the ZnO:Cr layer were studied with X-ray diffraction, photoluminescence, and superconductor quantum interferometer, respectively. The ZnO:Cr layer implanted Cr with a dose of 5 10 16 cm 2 remained wurtzite structure and exhibited near-band-edge photoluminescence at 3.365 eV with full-width at half-maximum of 8.4 meV at 10 K. The magnetic measurement showed that the ferromagnetism changed at room temperature by different Cr concentration. For samples implanted to high doses, remanent magnetization reached 1.805 10 -4 emu/g and coercive field was 244.5 Oe. Hall effect measurement showed a decrease of the resistivity from 251.7 cmto 28.6 cmafter annealing at 800 ℃. The magnetism is interpreted by bound magnetic polarons, which were taken into account of the process that electrons were locally trapped by oxygen vacancies and occupied the orbitals that overlapped with d shell of neighboring Cr ions.     

Temperature dependence of niobium superconducting nanowire single-photon detectors in He-3 cryocooler

Performances of superconducting nanowire single-photon detectors （SNSPDs） based on low Tc mate- rials strongly depend on the operating temperatures. We have fabricated infrared-sensitive niobium SNSPDs based on doped niobium （Nb＊） films and measured them in He-3 cryocooler. The critical current approaches to the de-pair- ing current at 0.3 K. Therefore, with the decrease in tem- peratures, we have observed a monotonous increase of count rate at the wavelength of 1,521 nm and exponential decrease of dark count rate at all bias currents. The possible origin of dark counts for doped Nb devices is also discussed.     

Magnetocrystalline anisotropy and spin-wave stiffness in tensile-strained La0.67Ba0.33MnO3 films: An investigation via ferromagnetic resonance

Tensile-strained epitaxial La_0.67Ba_0.33MnO₃ (LBMO) film has been prepared by magnetron sputtering technique on (001) oriented spinel MgAl₂O₄ substrate. The transport and magnetic measurements give an insulator-metal transition and paramagnetic-ferromagnetic transition occurring at ～150 K and 250 K respectively, which implies the phase separation in such a tensile-strained film. By analyzing the angular and temperature dependences of the ferromagnetic resonance (FMR), we determine the magnetocrystalline anisotropy of the film. It is found that the tensile-strained film is dominated by an easy-axis corresponding to the compressive out-of-plane direction, though the magnitudes of anisotropy constants are relatively small and their temperature dependences are some complex. Furthermore, the FMR spectra show additional spin wave resonance (SWR), and the field positions can be indexed to follow a linear dependence on the square of index n. The scaling gives a spin-wave exchange stiffness D of 20.7 meV Ų at low temperature, which is less than half of that in strain-free LBMO films, implying that the double exchange interaction is remarkably suppressed in the tensile-strained LBMO films.     

基于实测值的Landsat 8水面温度反演算法对比——以太湖为例

水面温度是影响湖泊物理、化学、生物和生态过程的关键因素,遥感反演可以扩展获取水面温度的空间尺度,现有研究多选择表层水温或其他温度产品而非实际水面温度来验证遥感反演结果。为获取太湖水面温度的最佳反演算法,首先量化水面温度与水下20 cm和50 cm水温的差异,再基于太湖四季典型日期的Landsat 8热红外数据,利用辐射传输方程法（radiative transfer equation, RTE算法）、覃志豪单窗算法（mono-window algorithm, MW算法）、Offer Rozenstein劈窗算法（split window, SW1算法）和Jiménez-Mu?oz劈窗算法（SW2）反演水面温度,以实测值验证反演结果。结果表明：太湖水面温度与表层水温存在显著差异,白天水面温度分别比20 cm和50 cm深处水温高3.6 K和5.6 K,Landsat 8过境时刻水面温度分别比20 cm和50 cm深处水温高2.7 K和2.9 K;以实测值为准,SW2算法对太湖水面温度的反演效果最佳,绝对误差范围为0.1~1.4 K,MW和RTE算法次之,SW1算法反演效果最差,在低温/高温时的反演值较实测值偏低/高2.0~3.0 K;四种算法均能反演出太湖水面温度的时间变化,但难以量化其空间格局。     

CeO2 thin films grown on biaxially textured nickel (001)

CeO\-2 films have been grown on biaxially textured Ni substrates at various temperatures. The results show that CeO\-2 films without IBAD are dominated by (111) orientation from room temperature to 800℃ while the preferential orientation of CeO\-2 films with IBAD is (001) at lower deposition temperature and (111) at deposition temperature higher than 450℃. CeO\-2 films with better in_plane texture and out_of_plane orientation can be grown at 360℃ with 240 eV ion energy and 200 μA/cm\+2 ion current density.     

Surface tension and specific heat of liquid Ni<Subscript>70.2</Subscript>Si<Subscript>29.8</Subscript> alloy

The thermophysical properties of liquid alloys in me-tastable state are of importance for liquid-solid phase transformation under nonequilibrium conditions[1―10]. Sur-face tension and specific heat, two of the most important thermophysical properties, have significant influences on the process of crystal nucleation and growth. Furthermore, it is necessary to obtain these data so as to perform quan-titative research on rapid solidification[3―10]. The tradi-tional measurement methods, however,…     

Insight into the covalent grafting of organic films onto carbon steel surfaces for protection

The novel use of p-nitrophenyldiazonium tetrafluoroborate salt(GG salt)as a protectant that is electrochemically grafted onto carbon steel has been investigated in0.05 mol L-1H2SO4and 5 wt%NaCl solutions using various corrosion monitoring techniques,such as electrochemical impedance spectroscopy,potentiodynamic polarisation,infrared spectra and scanning electron microscopy measurements.The electrochemical study reveals that this compound is a mixed inhibitor that predominantly controls the cathodic reaction.The surface-grafted film decreases the double-layer capacitance and obviously increases the charge transfer resistance relative to a bare carbon electrode.The values of inhibition effect remain nearly unchanged with an increase in temperature range of 298–318 K.The aryl diazonium is covalently bonded on the steel surface,causing a slight decrease in the apparent activation energy.Overall,the surface-grafted films exhibit excellent inhibition performance in acid and saline solutions within the studied temperature range.     

基于Landsat 8TIRS的地表温度反演算法对比分析

为研究地表温度反演算法之间的异同,以神东矿区为例,以Landsat 8 TIRS为数据源,利用辐射传导方程法、基于影像算法(image-based method,IB算法)、单窗算法(mono-window algorithm,MW算法)和单通道算法(single-channel method,SC算法)分别反演研究区地表温度,并用MODIS地表温度(land surface temperature,LST)数据进行验证,结果表明辐射传导方程法、MW算法和SC算法分别高于MODIS LST数据0.19 K、0.03 K和0.58 K,IB算法低于MODIS LST数据0.65 K,四种算法与MODIS LST数据的相关系数均达到0.9以上,其中MW算法与MODIS LST数据相关系数为0.971 1,精度最高。     

Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet

We have fabricated InGaN-based superlumi-nescent diodes （SLDs） with one-sided oblique facet. The characteristics of the SLDs and laser diodes with the same cavity length （800 μm） were compared. The typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 μm cavity length. The characteristics of the SLDs with different cavity length were also demon-strated in a comparative way. It is found that the gain of the InGaN multi-quantum wells in blue spectral range is a linear function of the current density below gain saturation region. The lasing threshold current turns out to be higher for the shorter SLD （S-SLD） （400 μm）, but the output light intensity of the longer SLD （800 μm） is higher than that of the S-SLD under the same current density. The gain saturation phe-nomenon was observed in S-SLD when it was biased at a current density larger than 27.5 kA/cm^2. The increase of junction temperature was identified as the main reason for gain saturation through spectra analysis.     

Superconductivity at 39 K in magnesium diboride

In the light of the tremendous progress that has been made in raising the transition temperature of the copper oxide superconductors (for a review, see ref. 1), it is natural to wonder how high the transition temperature, Tc, can be pushed in other classes of materials. At present, the highest reported values of Tc for non-copper-oxide bulk superconductivity are 33 K in electron-doped Cs(x)Rb(y)C60 (ref. 2), and 30 K in Ba(1-x)K(x)BiO3 (ref. 3). (Hole-doped C60 was recently found to be superconducting with a Tc as high as 52 K, although the nature of the experiment meant that the supercurrents were confined to the surface of the C60 crystal, rather than probing the bulk.) Here we report the discovery of bulk superconductivity in magnesium diboride, MgB2. Magnetization and resistivity measurements establish a transition temperature of 39 K, which we believe to be the highest yet determined for a non-copper-oxide bulk superconductor.     

The bulk transfer coefficients and surface fluxes on the western Tibetan Plateau

On the gradient observational data of the atmospheric surface layer from September 1997 to December 1998 collected by two sets of Automatic Weather Station (AWS) installed in Gaize and Shiquanhe on the western Tibetan Plateau, mean surface roughness lengths at the two stations above are determined to be 2.7 and 2.9 cm, respectively. The bulk transfer coefficients each day are computed by the profile-flux method, means of the bulk transfer coefficient for momentum (i.e. drag coefficient) in 1998 are 4.83×10⁻³ and 4.75×10³ at the two stations. The surface fluxes of momentum, sensible heat and latent heat each day are further estimated by the bulk formulas, annual mean of these fluxes is 3.4×10⁻² and 1.8×10²N/m², 73.1 and 67.2 W/m², 15.4 and 2.9 W/m², respectively. The diurnal and seasonal variations are obtained by a composite method and the relationships among the heat transfers between land and atmosphere, plateau monsoon and plateau rain season are also discussed.     

Temperature dependent spectral response characteristic of III-V compound tandem cell

The GaInP/GaAs/Ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Temperature dependence of the spectral response measurements of the GaInP/GaAs/Ge tandem cell was performed by a quantum effi-ciency system at temperatures ranging from 25℃ to 160℃. The red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap nar-rowing with temperature. The short-circuit current densities (J_sc)of GaInP, GaAs and Ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 mA/cm², re-spectively. The temperature coefficient of J_sc for the tandem cell was determined to be 8.9 mA/(cm²·℃), and the corresponding temperature coefficient of the open-circuit voltage deduced from the se-ries-connected model was -6.27 mV/℃.     

CSP生产线高速钢轧辊温度场有限元分析

采用有限元软件ANSYS,结合某CSP生产线F4机架工作辊表面温度的实测值,建立轧辊二维温度场模型,对轧辊在轧制过程中的温度和热凸度变化进行研究。结果表明,轧辊在咬入弧区的换热系数为5.8×104 W/(m2·K),在非咬入弧区的水冷等效换热系数为1.1×104 W/(m2·K);在此等效换热边界条件下,使轧辊热凸度达到稳定的烫辊时间约为75min。     

Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semicon-ductor-metal (MSM) ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional (2D) numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio (PDCR). Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wave-length response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature.     

Low melting point nanocrystalline Sn–Ag solder synthesized by a refined chemical reduction method

The commercial market of Sn-Pb solder is gradually decreasing due to its toxicity, calling for Pb-free substitute materials. Sn-Ag alloy is a potential candidate in terms of good mechanical property. The major problematic issue of using Sn-Ag is their high melting temperature, consequently this study is dedicated to lowering the melt- ing temperature of Sn3.5Ag （wt%） alloy by developing nanomaterials using a chemical reduction approach. The resultant nanocrystalline Sn3.5Ag is characterized by field emission scanning electron microscope. The size dependence of the melting temperature is discussed based on differential scanning calorimetry results. We have reduced the melting temperature to 209.8 ℃ in the nanocrystalline Sn3.5Ag of （32.4± 8.0） nm, compared to ～221 ℃ of the bulk alloy. The results are consistent with the prediction made by a relevant theoretical model, and it is possible to further lower the melting temperature using the chemical reduction approach developed by this study.     

Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

Wide bandgap(3.37 eV)and high excitonbinding energy of ZnO(60 meV)make it a promising candidate for ultraviolet light-emitting diodes(LEDs)and low-threshold lasing diodes(LDs).However,the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p–n homojunction LEDs.An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials(such as p-GaN)or building new device structures.In this article,we will briefly review the recent progress in ZnO LEDs/LDs based on p–n heterostructures and metal–insulatorsemiconductor heterostructures.Some methods to improve device efficiency are also introduced in detail,including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.     

Kinetics of the electrochemical process of galena electrodes in the diethyldithiocarbamate solution

The electrochemical process of galena in a pH 12.8 buffer solution was investigated using chronoamperometry and chronopotentiometry. To establish kinetic parameters on the surface of galena in the diethyldithiocarbamate solution, the exchange current density and the dependence of current density on reaction time were determined. Experimental results demonstrate that the exchange current density of galena is 1.585×10-2 A/m2 in the diethyldithiocarbamate-free solution. In the diethyldithiocarbamate solution, the thickness of lead diethyldithiocarbamate adsorbed on the surface of galena is 3.28 molecular layers, the diffusion coefficient of diethyldithiocarbamate on the surface of galena electrodes is 1.13×10-10 m2/s, and the exchange current density of galena is 0.45 A/m2. Lead diethyldithiocarbamate on the surface of galena is firmly adsorbed.