氧化还原循环对Ag/γ-吡啶甲酸体系表面增强喇曼散射效应的影响

通过改变非对称方波电位阶跃的各个参数,控制0.1 mol·L~(-1)KBr及0.05 mol·L~(-1)γ-吡啶甲酸体系(pH=9.5)中银的氧化还原循环(ORC)过程的氧化过电位、还原过电位及氧化电量。用扫描电镜观察不同参数的ORC过程对银电极表面微观形态的影响,并研究了电极表面形态的变化对表面增强喇曼散射(SERS)效应的影响。实验结果表明,还原过电位和ORC过程中的氧化电量对电极表面形态及SERS效应有较明显的影响。另外,还用电结晶理论及表面局域场增强理论对实验结果进行了讨论。     

SBD势垒高度的影响因素分析

目前,硅材料的肖特基势垒二极管(Schottky Barrier Diode SBD)的击穿电压普遍很低,严重影响其实际应用。为了解决这个关键性的问题,本文采用实验与理论分析相结合的方式,着重于表面态、界面层对势垒高度的影响进行研究。提取出三个重要参数,表面态密度Di、界面层电容密度Ci和表面态中性能级Φ0。结果表明:势垒高度的高低强烈依赖于这三个特性参数的大小。     

肖克莱对表面物理的贡献

本文依据所掌握的物理学史料,在简要回顾固体物理和表面物理发展历史的基础上,着重叙述肖克莱对表面能级的描述、表面态的最早认识和半导体表面特性研究,尤其是对开启了半导体电子时代的大门的半导体PN结表面特性的开创性研究.时至今日,PN结表面的研究还在继续.为了重新认识肖克莱对表面物理的贡献,在肖克莱诞辰100周年纪念之际,特撰此文.     

EQCM研究表面活性剂对金电极电化学行为的影响

利用电化学石英微天平（ＥＱＣＭ）,研究了表面活性剂在金电极上的吸附及其对金电极氧化还原过程的影响⒚结果表明：不同的表面活性剂在金电极上吸附能力不同,对金的氧化还原过程产生不同的影响⒚十八烷基三甲基溴化铵易在金电极表面吸附,更易在氧化态金表面吸附,阻碍了金的氧化还原⒚相比之下,十二烷基磺酸钠在金电极上吸附能力较弱,在氧化态金形成后还有些脱落,对金电极的氧化还原影响不大⒚ＴｒｉｔｏｎＸ１００介于以上两种表面活性剂之间⒚还对金电极在磷酸缓冲液中的氧化还原机理作了初步探讨     

变价金属配合物的氧化还原电位及其在分析化学中的应用

阐述变价金属元素形成配合物后电位变化规律。邻二氮菲、联吡啶与铁、钴、钌等变价元素形成配合物，低价态呈稳定态，电对电位升高，且高低价态配合物颜色有明显差异，使之在光度分析，氧化还原滴定中获得重要应用。     

新型二维ZnO/InSe纳米复合材料电子结构与光催化性能的第一性原理研究

基于密度泛函理论方法,系统研究了新型二维ZnO/InSe异质结的电子结构和光催化性能。计算结果表明,二维ZnO/InSe异质结的晶格失配率为3.3%,形成能为-2.43eV,表明异质结的结构稳定。异质结表现为Ⅱ型能带对齐,价带和导带的带偏置分别为0.51和1.34eV,能够有效降低电子和空穴的复合率,提高ZnO/InSe异质结的光催化性能。二维ZnO/InSe异质结是带隙值为2.23eV的直接带隙半导体材料,对应有良好的可见光吸收范围,且光吸收系数高达10~5 cm~(-1),能够进一步提升光吸收效率。此外,异质结的带边位置分别跨过水的氧化还原电位,可用于光解水制备氢气。因此,二维ZnO/InSe异质结是一种有前景的可见光光催化材料。     

ORP的测量及数显ORP标定的原理

通过对氧化还原电位概念的分析,讨论了氧化还原电位的计算方法及测量原理,并以化学反应式的形式论述了数显ORP计的使用及标定原理。结合实际应用进行了使用方法和注意事项的说明。特别对氧化还原电位在环境检测中的物理意义进行了分析说明。     

Fermi能级钉扎理论及ZnSnO3气敏材料表面态测定

为了进一步研究ZnSnO3气敏半导体表面的能带结构情况和电子得失情况,提出了Fermi能级钉扎理论在气敏材料开发研究中的应用．从实验出发,利用具有高表面态的FeCl2／FeCl3氧化还原对测定了ZnSnO3气敏材料的表面态与表面处导带底的相对位置．结果发现：Femli能级被钉扎在ZnSnO3表面处导带边Ecs下面约0．2eV处．其值基本上不受杂质掺入比例的影响,与掺杂剂的掺入浓度基本上无关,与工作气氛也基本上无关．从而从实验上验证了Fermi能级钉扎理论．     

氧化还原滴定曲线的图解法

在氧化还原滴定中,随着滴定剂的加入,氧化态或还原态的浓度是在逐渐变化的,电对的电位也随之不断变化,这一变化的情况可以由实验方法测得,也可用奈恩斯特(Nernst)方程进行计算,但计算过程中有关     

电极电势对反应速率常量的影响

讨论了处于平衡态的氧化还原电极电势对反应速率常量的影响问题.当体系中氧化态粒子浓度增加时,体系平衡电位上升,还原反应速率常量减小,氧化反应速率常量增加,无净反应发生,体系仍处于平衡态.     

Photoelectrochemical Solar Cells Based on Chitosan Electroylte

1 Results ITO-ZnTe/Chitosan-NH4I-I2/ITO photoelectrochemical solar cells have been fabricated and characterized by current-voltage characteristics.In this work,the ZnTe thin film was prepared by electrodeposition on indium-tin-oxide coated glass.The chitosan electrolyte consists of NH4I salt and iodine.Iodine was added to provide the I3-/I- redox couple.The PEC solar cell was fabricated by sandwiching an electrolyte film between the ZnTe semiconductor and ITO conducting glass.The area of the solar cell...     

A photovoltage-based integrated sensor for extracellular redox potential measurement and acidification detection

In this study,photovoltage technique is applied in the development of a monolithically integrated sensor for redox(reduction–oxidation)potential and pH measurement.The sensor employs the electrolyte–insulator–semiconductor structure,with deposition of a layer of gold metal on partial surface of insulator silicon dioxide.Silicon dioxide and gold layer on a single chip form two distinct sensing sites,by sharing the same measuring system,the detection of redox potential and pH variation can be realized.In this work,the sensor characteristics is tested,and the sensitivity for redox potential and pH measurement is53.8 mV/log([Fe(II)]/[Fe(III)])and 44.3 mV/pH respectively.To demonstrate the validity of the sensor in extracellular detection,neonatal rat kidney cells are cultured on the sensor surface and then packaged in a flow chamber,thus the acidification rate of metabolites and the redox potential variation in extracellular microenvironment can be continuously monitored.Experimental results indicate increasing acidification and reducing potentials under physiological conditions.The synthesis parameters have potentials in detail revelation of cell metabolism.     

MXene and MXene-based materials for lithium-sulfur batteries

Lithium-sulfur (Li–S) batteries are regarded as potential alternatives to lithium-ion batteries due to their extremely high theoretical energy density. Nevertheless, Li–S batteries still suffer from low coulombic efficiency, low sulfur utilization, and poor cycling life, which hinder their further applications. To obtain ideal Li–S cells, intensive work has been dedicated to improve the conductivity of the electrode, inhibiting the shuttle of lithium polysulfides, and promoting the redox of sulfur. Two-dimensional transition metal carbides, nitrides or carbonitrides, also known as MXenes, attracting significant research interest in Li–S batteries due to their high conductivity, abundant active sites, layered structure and adjustable surface chemistry. In this review, we summarize the partial etching methods of MXenes with different surface terminations, the role of MXenes in Li–S batteries and MXene-based composites designed for Li–S batteries based on interfacial chemistry and interlayer structure. In the end, we also propose the perspectives of MXenes for Li–S batteries.     

金属掺杂对半导体薄膜光学性质的影响

研究了射频溅射法制备的半导体膜的光学特性.通过样品透射谱分析,发现在半导体In2O3材料中掺入金属Fe颗粒的薄膜中,电子的带间跃迁由In2O3的直接跃迁变为间接跃迁;随Fe所占体积份数的增加,局域态尾变宽,带隙变窄.这是由于掺入Fe颗粒后,母体材料与金属颗粒的界面处表面态增多,以及母体材料的非晶化引起的.     

Solid State Polymer Electrolytes for Dye-sensitized Solar Cell

1 Introduction Over the past decade,Dye-sensitized solar cells (DSSCs) have been intensively investigated as potential alternatives to conventional inorganic photovoltaic devices due to their low production cost and high energy conversion[1-4]. This type of solar cell has achieved an impressive energy conversion efficiency of over 10%,whose electrolyte is a voltaic organic liquid solvent containing iodide/triiodide as redox couple.However,the use of a liquid electrolyte brings difficulties in the practi...     

压力下半导体GaAs的电子表面态

使用插值拟合近似获得晶格常数、带隙随压力的解析表示，采用变分法研究了流体静力学压力对半导体GaAs电子本征表面态的影响，数值结果表明，随压力增加电子表面态能级明显向上移动，且电子趋近表面。     

Experimental evidence for sub-3-fs charge transfer from an aromatic adsorbate to a semiconductor

The ultrafast timescale of electron transfer processes is crucial to their role in many biological systems and technological devices. In dye-sensitized solar cells, the electron transfer from photo-excited dye molecules to nanostructured semiconductor substrates needs to be sufficiently fast to compete effectively against loss processes and thus achieve high solar energy conversion efficiencies. Time-resolved laser techniques indicate an upper limit of 20 to 100 femtoseconds for the time needed to inject an electron from a dye into a semiconductor, which corresponds to the timescale on which competing processes such as charge redistribution and intramolecular thermalization of excited states occur. Here we use resonant photoemission spectroscopy, which has previously been used to monitor electron transfer in simple systems with an order-of-magnitude improvement in time resolution, to show that electron transfer from an aromatic adsorbate to a TiO(2) semiconductor surface can occur in less than 3 fs. These results directly confirm that electronic coupling of the aromatic molecule to its substrate is sufficiently strong to suppress competing processes.     

平面介质靶周围离子体鞘的特征

该文研究了在等离子体浸没离子注入（ＰＩＩＩ）中介质材料（高聚物、半导体等）为被注入对象时,其周围离子体鞘的扩展厚度和电势特征。在常规应用中,薄介质材料的厚度和相对介电常数对离子体鞘的厚度和离子集群势能分布及大小影响不大。因此在现有的等离子体处理、沉积、聚合、刻蚀等设备中都能方便地引入ＰＩＩＩ方式。     

A GaAs polariton light-emitting diode operating near room temperature

The increasing ability to control light-matter interactions at the nanometre scale has improved the performance of semiconductor lasers in the past decade. The ultimate optimization is realized in semiconductor microcavities, in which strong coupling between quantum-well excitons and cavity photons gives rise to hybrid half-light/half-matter polariton quasiparticles. The unique properties of polaritons-such as stimulated scattering, parametric amplification, lasing, condensation and superfluidity-are believed to provide the basis for a new generation of polariton emitters and semiconductor lasers. Until now, polariton lasing and nonlinearities have only been demonstrated in optical experiments, which have shown the potential to reduce lasing thresholds by two orders of magnitude compared to conventional semiconductor lasers. Here we report an experimental realization of an electrically pumped semiconductor polariton light-emitting device, which emits directly from polariton states at a temperature of 235 K. Polariton electroluminescence data reveal characteristic anticrossing between exciton and cavity modes, a clear signature of the strong coupling regime. These findings represent a substantial step towards the realization of ultra-efficient polaritonic devices with unprecedented characteristics.