耗散准模腔场与激子相互作用的量子统计性质

研究了耗散准模腔场与激子相互作用的量子统计特性 ,给出了当腔场初始处于真空态而激子处于真空态与粒子数态大于 2的叠加态时的腔场与激子能量交换的表达式。研究结果表明 ,激子和腔场可以呈现亚泊松分布状态 ,激子与腔场之间的关联是经典的 ,不存在Cauchy Schwartz不等式的偏离现象。     

声子之间相互作用对量子点中激子性质的影响

本文采用线性组合算符和幺正变换方法研究了抛物型量子点中强耦合激子的性质．当计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论了量子点中激子的基态能量的影响．以氯化铊半导体为例进行了数值计算,结果表明：激子的基态能量随量子点半径的增大而减小,随量子点受限强度的增大而增大．     

III族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响

在有效质量近似下,运用变分方法,考虑内建电场效应和量子点(QD)的三维约束效应的情况下,研究了类氢施主杂质在量子点中的位置对III族氮化物量子点中束缚激子结合能的影响。结果表明:当类氢施主杂质位于量子点中心时,对于InxGa1-xN/GaN量子点,量子点高度和In含量存在临界值,当参数大于临界值时,约束在QD中束缚激子的结合能升高,激子态的稳定性增强,提高了激子的离解温度,使人们能在较高的温度条件下观察到半导体量子点吸收谱中的激子峰。而类氢施主杂质总是使束缚在GaN/A lxGa1-xN量子点中激子的结合能升高,载流子被更强的约束在量子点中。说明对GaN/A lxGa1-xN量子点,杂质使人们能在更高温度下观察到量子点中的激子。类氢施主杂质位于量子点上界面时,束缚激子的结合能最大,系统最稳定;随着施主杂质下移,激子结合能减小,激子的离解温度下降。     

纤锌矿GaN/AlN无限量子阱中激子能量

利用改进的LLP变分法计算了纤锌矿GaN/AlN无限量子阱中激子的基态能量和结合能,并对闪锌矿GaN/AlN量子阱和纤锌矿GaN/AlN量子阱中激子的基态能量和结合能进行了对比.结果表明:纤锌矿GaN/AlN无限量子阱材料中激子基态能量和结合能随着量子阱宽度增大而降低,当阱宽较小时急剧下降,阱宽较大时缓慢下降,最后趋近GaN体材料的三维值;考虑极化子效应时激子的基态能量和结合能明显低于裸激子的基态能量和结合能,电子-声子相互作用对激子能量的贡献较大;纤锌矿GaN/AlN量子阱中激子基态能量小于闪锌矿GaN/AlN量子阱中激子的基态能量,纤锌矿GaN/AlN量子阱中激子的结合能大于闪锌矿GaN/AlN量子阱中激子的结合能,且随着阱宽的增大,两种阱中基态能量和结合能的差距越来越小.     

量子点量子阱结构中激子的极化效应(英文)

考虑激子与体纵光学声子的相互作用,采用变分法研究了量子点量子阱结构中澈子的极化效应.以CdS/HgS量子点量子阱结构为例进行数值计算,得到了激子的基态能量和束缚能.研究结果表明,声子对澈子束缚能的贡献随着阱宽的增加而增加,极化子效应不能忽略.激子的基态能量和束缚能明显依赖于量子点量子阱结构的核半径和壳层厚度,量子点量子阱结构的尺寸对激子-声子相互作用有重要的影响.     

Spontaneous coherence in a cold exciton gas

If bosonic particles are cooled down below the temperature of quantum degeneracy, they can spontaneously form a coherent state in which individual matter waves synchronize and combine. Spontaneous coherence of matter waves forms the basis of a number of fundamental phenomena in physics, including superconductivity, superfluidity and Bose-Einstein condensation. Spontaneous coherence is the key characteristic of condensation in momentum space. Excitons--bound pairs of electrons and holes--form a model system to explore the quantum physics of cold bosons in solids. Cold exciton gases can be realized in a system of indirect excitons, which can cool down below the temperature of quantum degeneracy owing to their long lifetimes. Here we report measurements of spontaneous coherence in a gas of indirect excitons. We found that spontaneous coherence of excitons emerges in the region of the macroscopically ordered exciton state and in the region of vortices of linear polarization. The coherence length in these regions is much larger than in a classical gas, indicating a coherent state with a much narrower than classical exciton distribution in momentum space, characteristic of a condensate. A pattern of extended spontaneous coherence is correlated with a pattern of spontaneous polarization, revealing the properties of a multicomponent coherent state. We also observed phase singularities in the coherent exciton gas. All these phenomena emerge when the exciton gas is cooled below a few kelvin.     

半导体量子点非本征吸收区的三阶极化率

通过变分法计算了量子点激子基态能量和偶极跃迁振子强度,分析了半导体量子点在非本征吸收区的三阶极化率.量子点中激子的基态能量随量子点半径的增大而单调减小,这是量子尺寸效应的反映;量子点中由基态到激子基态的跃迁振子强度,随量子点半径的增大而单调增大;在弱受限量子点情况下,三阶极化率的实部和虚部都是负的,对应于非线性光学自散焦效应,其绝对值随入射光频率的增加而增加,且随量子点半径的增大而增大.     

Macroscopically ordered state in an exciton system

There is a rich variety of quantum liquids -- such as superconductors, liquid helium and atom Bose-Einstein condensates -- that exhibit macroscopic coherence in the form of ordered arrays of vortices. Experimental observation of a macroscopically ordered electronic state in semiconductors has, however, remained a challenging and relatively unexplored problem. A promising approach for the realization of such a state is to use excitons, bound pairs of electrons and holes that can form in semiconductor systems. At low densities, excitons are Bose-particles, and at low temperatures, of the order of a few kelvin, excitons can form a quantum liquid -- that is, a statistically degenerate Bose gas or even a Bose-Einstein condensate. Here we report photoluminescence measurements of a quasi-two-dimensional exciton gas in GaAs/AlGaAs coupled quantum wells and the observation of a macroscopically ordered exciton state. Our spatially resolved measurements reveal fragmentation of the ring-shaped emission pattern into circular structures that form periodic arrays over lengths up to 1 mm.     

Quantum nature of a strongly coupled single quantum dot-cavity system

Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is strongly coupled to a cavity mode, it is possible to realize important quantum information processing tasks, such as controlled coherent coupling and entanglement of distinguishable quantum systems. Realizing these tasks in the solid state is clearly desirable, and coupling semiconductor self-assembled quantum dots to monolithic optical cavities is a promising route to this end. However, validating the efficacy of quantum dots in quantum information applications requires confirmation of the quantum nature of the quantum-dot-cavity system in the strong-coupling regime. Here we find such confirmation by observing quantum correlations in photoluminescence from a photonic crystal nanocavity interacting with one, and only one, quantum dot located precisely at the cavity electric field maximum. When off-resonance, photon emission from the cavity mode and quantum-dot excitons is anticorrelated at the level of single quanta, proving that the mode is driven solely by the quantum dot despite an energy mismatch between cavity and excitons. When tuned to resonance, the exciton and cavity enter the strong-coupling regime of cavity QED and the quantum-dot exciton lifetime reduces by a factor of 145. The generated photon stream becomes antibunched, proving that the strongly coupled exciton/photon system is in the quantum regime. Our observations unequivocally show that quantum information tasks are achievable in solid-state cavity QED.     

量子点限制对束缚激子基态能和结合能的影响

用变分法计算了ＧａＡｓ／Ｇａ１－ｘＡｌｘＡｓ材料中束缚激子的基态能和结合能，并对计算结果进行了讨论，得出当量子半径取适当数值时人们有可能在更高温度下观测到量子点中的激子的结论。     

类氢杂质对In_xGa_（1-x）N/GaN和GaN/Al_xGa_（1-x）N量子点中束缚激子态的影响

在考虑内建电场效应和量子点（QD）的三维约束效应的情况下,运用变分方法研究了类氢施主杂质的位置对Ⅲ族氮化物量子点中束缚激子态的影响.结果表明：当类氢施主杂质位于量子点中心,InxGa1-xN/GaN量子点的高度和In含量大于临界值时,约束在QD中激子的基态能降低,激子态的稳定性增强,在较高的温度下观察到半导体量子点吸收谱中的激子峰,发光波长增大.而类氢施主杂质总是使束缚在GaN/AlxGa1-xN量子点中激子的基态能降低,杂质可能使在更高温度下观察到GaN/AlxGa1-xN量子点中的激子,发光波长增大.研究发现类氢施主杂质位于量子点上界面时,激子的基态能最小,系统最稳定;随着施主杂质下移,激子基态能增加,激子的解离温度下降,发光波长减小.     

声子之间相互作用对量子点中弱耦合激子基态能量的影响

采用线性组合算符方法研究了半导体量子点中弱耦合激子的性质.讨论了声子之间相互作用对激子基态能量的影响.数值结果表明:声子之间相互作用对激子基态能量的影响不能忽略.     

GaN/AlxGa1-xN量子点中的激子态

在有效质量近似框架内,运用变分方法,考虑内建电场效应和量子点的三维约束效应,研究了含类氢杂质的G aN/A lxG a1-xN量子点中的激子态.结果表明:量子点中心的类氢杂质使激子的基态能降低,结合能升高,Q D系统的稳定性增强,光跃迁能减小;杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定;随着杂质从量子点的上界面沿着z轴移至下界面,激子基态能和光跃迁能增大,结合能减小.     

量子点的尺寸效应及声子对激子基态结合能的影响

利用变分法研究了有很小厚度圆盘形GaAs量子点模型中激子的基态结合能，及电子-空穴间距随量子点尺寸变化的规律．考察了电子-空穴的关联明显加强时及完全束缚发生时量子点的横向尺度，初步考虑了体纵光学声子对量子点中激子基态结合能的影响，得出一些定性的结论。     

双层量子点中的带负电荷激子

利用精确对角化方法,研究了抛物势双层量子点中带负电荷激子的1S态和3P态的关联能与量子点的束缚势大小的变化关系,以及1S态对应几个不同的量子点间点与点的距离的束缚能随束缚势大小的变化关系,计算了电子与空穴质量比为σ=0.677和σ=0.197的缚能随束缚势大小的变化关系.     

A topological Dirac insulator in a quantum spin Hall phase

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi(1-x)Sb(x) single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher-dimensional analogues of the edge states that characterize a quantum spin Hall insulator. In addition to its interesting boundary states, the bulk of Bi(1-x)Sb(x) is predicted to exhibit three-dimensional Dirac particles, another topic of heightened current interest following the new findings in two-dimensional graphene and charge quantum Hall fractionalization observed in pure bismuth. However, despite numerous transport and magnetic measurements on the Bi(1-x)Sb(x) family since the 1960s, no direct evidence of either topological Hall states or bulk Dirac particles has been found. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy (IPEM-ARPES), we report the direct observation of massive Dirac particles in the bulk of Bi(0.9)Sb(0.1), locate the Kramers points at the sample's boundary and provide a comprehensive mapping of the Dirac insulator's gapless surface electron bands. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the 'topological metal'. They also suggest that this material has potential application in developing next-generation quantum computing devices that may incorporate 'light-like' bulk carriers and spin-textured surface currents.     

氮化物柱形量子点中离子施主束缚激子态波函数的研究

在有效质量近似和变分原理的基础上,选取三个不同的尝试波函数,研究了纤锌矿结构的InxGa1-xN/GaN柱形量子点中离子施主束缚激子（D＋,X）的束缚能随量子点高度L、In含量x及离子施主杂质位置z0的变化规律.计算结果表明：三个不同尝试波函数变分计算得到的束缚能随量子点高度L、In含量x及离子施主杂质位置z0的变化规律一致.但对比三个不同尝试波函数计算所得结果,依据变分原理可知,三参量尝试波函数优越.     

直接带隙Ge/Si_(1-x)Ge_x量子阱中激子态和带间光跃迁

利用有效质量近似和变分原理,对直接带隙Ge/Si1-x Gex量子阱中激子态和带间光跃迁进行研究.结果表明:直接带隙Ge/Si1-x Gex量子阱中带间光跃迁能、激子复合时间和基态振子强度依赖于阱宽和Si1-x Gex中Ge含量.当阱宽大于30nm时,跃迁能、激子复合时间、振子强度对Ge含量和阱宽的变化不敏感;基态线性光极化率随着Ge含量的增加而减小,同时光极化率峰值所对应的光子能量减小.     

介电量子阱中激子的Stark效应

在考虑像势影响的情况下，利用变分的方法计算了垂直电场下无限深介电势阱中激子的结合能，得到了像势对激子结合能的修正随阱宽、电场强度以及阱垒介电函数之比的变化曲线，我们发现：考虑像势影响对激子结合能及其Ｓｔａｒｋ效应的修正是很有意义的，而且自像势和互像势对Ｓｔａｒｋ效应的影响是相反的。