La掺杂对化学沉积ZnS薄膜影响的电化学研究

采用化学沉积法在导电玻璃上制备了ZnS及其La掺杂薄膜.用扫描电子显微镜(SEM)对其形貌进行表征,并用CHI660B电化学综合分析测试仪对ZnS和La掺杂ZnS薄膜的沉积过程进行分析.结果表明,化学沉积法制备了致密的、由球状颗粒组成的ZnS薄膜,掺杂La后,由于电负性较低的La在电极表面的吸附,电位负移,沉积速率下降,薄膜颗粒尺寸增大.电化学方法为研究ZnS的化学沉积提供了有效的分析技术.     

Fabrication of MgB_2 superconducting films by different methods

MgB2 superconducting films have been successfully fabricated on single crystal MgO(111) and c-AL2O3 substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transition temperature of 38.4 K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with the zero resistance transition temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density Jc of 107 A/cm2 at 15 K in zero field for the thin film and of 105 A/cm2 for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100μΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO.     

化学镀稀土合金的研究进展及发展趋势

综述报道了化学镀稀土合金的研究新进展,分别从化学镀稀土镍基合金、稀土钴基合金、稀土铁基合金三个方面进行论述。简单介绍了一种新工艺—超声低温化学镀稀土合金的研究现状。并指出稀土合金领域目前存在的问题及今后的发展方向。     

An／C_（60）－Polymer／P－Si结构C－V特性

报道了利用ＰＥＣＶＤ技术在Ｐ－Ｓｉ衬底抛光面上淀积含Ｃ６０聚合物薄膜及在薄膜表面蒸金形成Ａｎ／Ｃ６０－Ｐｏｌｙｍｅｒ／Ｐ－Ｓｉ结构．通过常温及温偏处理后的不同Ｃ－Ｖ特性，推算了聚合物薄膜中的几种电荷密度和介电常数，并对经过温偏处理后Ｃ－Ｖ曲线的畸变做了讨论．     

铝掺杂氧化锌薄膜的光学性能及其微结构研究

以氧化铝(Al2O3)掺杂的氧化锌(Zn O)陶瓷靶作为溅射靶材,采用射频磁控溅射工艺在玻璃基片上制备了具有c轴择优取向的铝掺杂氧化锌(Zn O:Al)薄膜样品.通过可见-紫外光分光光度计和X射线衍射仪的测试表征,研究了生长温度对薄膜光学性能及其微结构的影响.实验结果表明:薄膜性能和微观结构与生长温度密切相关.随着生长温度的升高,样品的可见光平均透过率、(002)择优取向程度和晶粒尺寸均呈非单调变化,生长温度为640 K的样品具有最好的透光性能和晶体质量.同时薄膜样品的折射率均表现为正常色散特性,其光学能隙随生长温度升高而单调增大.与未掺杂Zn O块材的能隙相比,所有Zn O:Al薄膜样品的直接光学能隙均变宽.     

半导体热电材料Bi1-xSbx薄膜的电化学制备

B I1-XSBX半导体合金是性能优异的热电和磁电功能材料,为制备固态电制冷器件、温差发电器件和磁电器件的重要材料。电化学沉积薄膜技术工艺设备简单成本低,在半导体薄膜制备方面有很好的应用前景。系统研究了高浓度盐酸(2.4 MOL/L)的B I和SB盐酸溶液,成份从纯铋逐步变化到纯锑的B I1-XSBX合金半导体薄膜电化学沉积特性。测试了沉积过程I-V循环曲线和和沉积电荷效率等电化学参数。结果表明在所有成份范围内都可以得到典型的B I1-XSBX固溶体结构的高质量薄膜。薄膜生长为典型的溶液扩散控制过程,具有高的沉积电荷效率。薄膜沉积和溶解之间的电位差随溶液中SB(Ⅲ)离子浓度增加而增大,生长的薄膜越来越稳定。在30%SB浓度附近,电化学过程、薄膜结构和性能发生明显的突变。应用X射线衍射和电子显微镜研究薄膜结构,发现薄膜具有明显的(012)择优取向,薄膜晶粒尺寸也随SB浓度的增加而变化。     

Optical properties of cobalt xanthate films on different substrates

Cobalt isopropyl xanthate thin films (CXTFs) were deposited via chemical bath deposition onto different substrates: commercial glass (CG), indium tin oxide (ITO), and poly(methyl methacrylate) (PMM). Isopropyl xanthate was synthesized according to a method described in the literature. The cobalt nitrate and isopropyl xanthate were mixed in a beaker, which allowed the thin films to be deposited via a simple ion-ion mechanism. The transmission, reflectivity, refractive index, dielectric constant, and optical conductivity were investigated for various thin films coated onto different substrates. An ultraviolet-visible spectrophotometer was used to measure the optical properties of the thin films. The lowest value of the transmission and the highest value of the refractive index were observed for the thin films deposited onto PMM. The structure of the cobalt xanthate was characterized by Fourier transform infrared (FTIR) spectroscopy, which was measured using a Perkin-Elmer Spectrum 400 spectrometer. The stretching vibration of the Co-S bonds was observed at 359 cm-1 in the FTIR spectrum of the CXTFs.     

Preparation and characterization of cobalt-doped iron pyrite(FeS_2) thin films

Iron pyrite (FeS_2) incorporated with cobalt dopant varying from 2%to 6%atomic ratio,was synthesized by using an aqueous hydrothermal process.The thin films of Co-doped FeS_2were fabricated by a vacuum thermal evaporation of synthesized FeS_2powder.The structural,electrical and optical properties of as-deposited and sulfurized films were investigated.The X-ray diffraction results indicated that the synthesized powder and thin films showed a cubic pyrite structure.The crystallinity of FeS_2was slightly degraded by the doping of cobalt.The dependence of thin-film resistance on the temperature indicated an increase of activation energy until 3 at%cobalt doping and then decreased the resistance with the increase of cobalt concentration.Hall effect measurements showed that the Co-doped samples have n-type conduction except for the 2 at%.The carrier concentration was in the order of 10~(18)cm~(-3),whereas,the carrier mobility decreased from 6.52 cm~2/V.s to 4.3 cm~2/V.s with the increase of cobalt dopant.The photosensitivity of undoped and cobalt-doped FeS_2films was measured under AM 1.5G and NIR light.The sulfurized films showed a higher photoresponse than the asdeposited films for both visible and IR lights.     

氮化硅薄膜的PECVD沉积工艺与绝缘耐压性能

用PECVD法制备氮化硅介质薄膜 ,分析了沉积温度、本底真空度及气体流量比等工艺参数对氮化硅薄膜绝缘耐压性能的影响 ,制备出 0 .4 μm的性能良好的氮化硅介质绝缘膜     

Ag雕塑薄膜生长的阴影效应研究

通过引入阴影效应、层内扩散和层间扩散势能,建立了倾斜沉积条件下金属雕塑薄膜生长的三维动力学蒙特卡罗模型。利用该模型模拟了Ag在倾斜沉积实验条件下的生长过程。模拟结果表明,由于阴影效应的加强,薄膜表面随着沉积角的增加明显变得粗糙并长成纳米柱结构。通过改变不同的沉积角,研究了薄膜表面形貌的变化,并统计分析了表明粗糙度随薄膜高度的变化关系,论证了雕塑薄膜生长过程中阴影效应与扩散效应的影响机制。     

SnO_2薄膜的形貌及其电特性分析

我们用ＰＥＣＶＤ方法制备出ＳｎＯ_２薄膜，透射电镜ＴＥＭ分析表明沉积温度由高到低时，ＳｎＯ_２膜从多晶态转变为非晶态，并且其电阻率随之增加；沉积时氧气流量增加时，ＳｎＯ_２的电阻率增加。     

硅和蓝宝石基底上的高Tc薄膜

使用多层沉积和大块沉积两种技术,在硅和蓝宝石的单晶基底上沉积了Yba2XCu3O7高Tc薄膜,实验显示：在硅基底上得到了转变温度为80K的期待结果．     

微波等离子体化学气相淀积ZrO2薄膜的表面形貌研究

以锆的β-二酮螫合物为源,以微波等离子体化学气相淀积方法合成ZrO_2薄膜过程中,观察到不同淀积条件下出现的四种不同表面形貌。从等离子体的电子温度、电子密度和源物质的浓度等方面对几种形貌的成因进行了讨论。同时用扫描电镜观察了高温退火及等离子体退火对薄膜形貌的影响,以及不同衬底薄膜形貌的差异。     

强磁场下蒸镀法制备Co_3O_4薄膜

为了研究强磁场对蒸镀法制备Co3O4薄膜结构影响,以提高该材料的取向性,改善Co3O4薄膜的磁学性能,该文以99.99%的Co为原料,分别在无磁场和强磁场条件下低真空热蒸镀Co3O4薄膜,采用扫描电子显微镜、X射线衍射和振动样品磁强计研究了以Si(111)为基底的Co3O4薄膜晶粒尺寸、取向和磁性能。结果表明:随着磁场强度增加至4T,晶粒尺寸由200 nm减至20 nm,晶体由杂乱取向排列转为平行于磁场方向取向生长,薄膜的矫顽力减小,矩磁比增大至0.81。结果表明:强磁场对蒸镀法制备Co3O4薄膜晶粒的大小和取向有显著影响,能显著提高材料的矩磁比。     

衬底温度对ZnO：Al薄膜结构和光透过性能的影响

利用超声喷雾热解方法以不同的沉积温度（450～530℃）在石英衬底上制备出具备较高光学质量的ZnO：Al（AZO）薄膜.通过X射线衍射谱（XRD）研究了薄膜的结构,用扫描电子显微镜（SEM）研究了薄膜的表面形貌,用紫外可见（UV）分光光度计对薄膜的光透过特性进行了测试分析.结果表明：所制备薄膜在可见波段具有较高透过率,并且沉积温度对AZO薄膜的结构和光透过性能有很大影响.在衬底温度为470℃时得到的AZO薄膜具有（002）择优取向,结晶质量最好、光透过率最高,在可见光区平均透过率达到85%以上.     

衬底温度对In_xGa_（1-x）N薄膜结构特性的影响

本文采用MOCVD工艺,通过调整衬底温度（固定其它工艺参数）来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪（XRD）、X射线荧光光谱仪（XRF）、扫描电子显微镜（SEM）和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.     

衬底温度对InxGa1-xN薄膜结构特性的影响

本文采用MOCVD工艺,通过调整衬底温度(固定其它工艺参数)来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)、扫描电子显微镜(SEM)和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.     

Progress on Sn-based thin-film anode materials for lithium-ion batteries

Thin-film lithium-ion batteries are the most competitive power sources for various kinds of micro-electro-mechanical systems and have been extensively researched.The present paper reviews the recent progress on Sn-based thin-film anode materials,with particular emphasis on the preparation and performances of pure Sn,Sn-based alloy,and Sn-based oxide thin films.From this survey,several conclusions can be drawn concerning the properties of Sn-based thin-film anodes.Pure Sn thin films deliver high reversible capacity but very poor cyclability due to the huge volume changes that accompany lithium insertion/extraction.The cycle performance of Sn-based intermetallic thin films can be enhanced at the expense of their capacities by alloying with inactive transition metals.In contrast to anodes in which Sn is alloyed with inactive transition metals,Sn-based nanocomposite films deliver high capacity with enhanced cycle performance through the incorporation of active elements.In comparison with pure Sn anodes,Sn-based oxide thin films show greatly enhanced cyclability due to the in situ formation of Sn nanodispersoids in an Li2O matrix,although there is quite a large initial irreversible capacity loss.For all of these anodes,substantial improvements have been achieved by micro-nanostructure tuning of the active materials.Based on the progress that has already been made on the relationship between the properties and microstructures of Sn-based thin-film anodes,it is believed that manipulating the multi-phase and multi-scale structures offers an important means of further improving the capacity and cyclability of Sn-based alloy thin-film anodes.     

磁控溅射沉积Cu-W薄膜的结构及性能

 以磁控溅射制备W原子数分数为2.1%~53.1%的Cu-W薄膜,用EDX、XRD、TEM、SEM、显微硬度计和四探针电阻仪对薄膜成分、结构和性能进行表征,研究薄膜中W含量的变化对薄膜结构及性能的影响.结果表明,Cu-W薄膜呈纳米晶结构,含x=2.1%~16.2%W的Cu-W膜中存在W在Cu中的铜基fcc Cu(W) 非平衡亚稳过饱和固溶体,Cu-36.0%W膜中存在fcc铜基和bcc钨基双相固溶体,含x=48.7%~53.1%W的Cu-W膜则存在Cu在W中的钨基bcc W(Cu)亚稳过饱和固溶体.具两相结构的Cu-36%W薄膜的显微硬度最大,而Cu-W膜电导率则随W含量上升而持续降低.400 ℃退火1 h后,Cu-W薄膜发生基体相晶粒长大,硬度降低,但电导率提高.Cu-W薄膜在退火后结构和性能变化的主要原因是退火中基体相晶粒发生了长大.     

无电化学沉积法合成铜纳米线

采用无电化学沉积法制备铜纳米线,与电化学沉积法不同,无电化学沉积法不需要在通孔模板的一面溅射一层导电金膜作为阴极,以及持续供给电力才能完成纳米线的合成.考察沉积时间、敏化液等因素对铜纳米线制备的影响.使用扫描电子显微镜(SEM),X射线衍射(XRD)对样品其进行检测,结果表明,无电化学沉积法首先形成纳米粒子,随着沉积时间的延长,纳米粒子逐渐融合形成纳米管、纳米线.制备的铜纳米线为多晶态结构.在没有模板限制的情况下,铜原子自催化生长形成类似于花瓣的结构.用95%乙醇代替水配制的敏化液性质较稳定,但是,与以水配制的敏化液相比,在大约相同的沉积时间条件下较不易形成纳米线.