Enhancing thermoelectric performance of Cu-modified Bi0.5Sb1.5Te3 by electroless plating and annealing

With the capacity of energy conversion from heat to electricity directly, thermoelectric materials have been considered as an alternative solution to global energy crisis. In this work, Cu modified Bi_(0.5)Sb_(1.5)Te_3(BST)composites are prepared by a facile electroless plating Cu method, spark plasma sintering, and annealing. The annealed 0.22 wt.%Cu/BST has an enhanced peak Figure of Merit(z T) of ~ 0.71 at 573 K with high average z T of0.65 in the wide temperature range between 300 and 573 K. Due to the significant increase of electrical conductivity and low lattice thermal conductivity, the annealed 0.22 wt.%Cu/BST shifts peak z T to high temperature, and shows 492% enhancement than that of pristine BST with z T of 0.12 at 573 K. Through detailed structural characterization of the annealed 0.22 wt.%Cu/BST, we found that Cu can dope into BST matrix and further form Cu2 Te nanoprecipitates, dislocations, and massive grain boundaries, leading to a low lattice thermal conductivity of 0.30 Wm-1 K-1 in the annealed 0.22 wt.%Cu/BST. Such enhanced peak z T in high-temperature and high average z T in the wide temperature range shows that the electroless plating Cu method and annealing can improve the thermoelectric performance of commercial BST and expand the applicability of Bi_2Te_3 thermoelectric materials in the power generations.     

Fabrication and property of high-performance Ag-Pb-Sb-Te system semiconducting thermoelectric materials

High performance Ag-Pb-Sb-Te system thermoelectric bulk materials were fabricated by a combination of mechanical alloying (MA) and spark plasma sintering (SPS). Phase composition and microstructure of the resultant materials were investigated by X-ray diffraction (XRD) and scanning electron micros-copy (SEM) analysis. A special emphasis was paid to the effects of chemical composition, especially the Pb content on the thermoelectric properties of the Ag0.8Pb18 xSbTe20 samples, including electrical resistivity, Seebeck coefficient, power factor, thermal conductivity and dimensionless figure of merit. The present study reveals that the optimal composition of Ag0.8Pb18 xSbTe20 samples is Ag0.8Pb22.5SbTe20 and the maximum figure of merit (ZT) is 1.2 at 673 K.     

扩散处理对Ag-Cu复合电触头界面区域组织、成分及导电性的影响

通过等离子喷涂工艺制备Ag-Cu复合电触头试样,研究扩散退火对触头界面区域微观组织、成分分布以及导电性的影响.结果表明:400℃扩散处理使Ag-Cu复合电触头涂层在高温下产生烧结现象,涂层裂纹、孔隙减少,导电率上升;600℃扩散处理在界面区域有Cu的第二相析出,使电子散射几率下降,导电率显著上升,但随着退火时间延长,涂层内部因体积收缩,涂层裂纹、空隙增加,导电率呈现下降趋势.     

Effect of vacuum annealing on the characteristics of composite pellets containing DBSA-doped polyaniline and Fe nanoparticles

The DBSA-PANI-Fe composite powder with 50wt% of Fe nanoparticles was prepared by mechanically mixing the DBSA-doped polyaniline powder and Fe nanoparticles. The composite powder was compacted to pellets and the pellets were annealed in vacuum at 443,493,543, and 593 K for 60 and 120 min. The conductivity of the pellet increases markedly with increasing the annealing temperature up to 493 K, and then decreases with further increasing the annealing temperature. When the pellet was annealed at 493 K for 60 min, the increment of conductivity reaches a maximum value, and the conductivity is 2.6 times as large as that of the pellet unannealed. The conductivities of the pellets annealed under the conditions of 543 K/120 min, 593 K/60 min, and 593 K/120 min are lower than the conductivity of the pellet unannealed. For all the pellets, the variation in conductivity with temperature reveals that the charge transport mechanism can be considered to be 1-D variable-range-hopping (1-D VRH). The composite pellet shows a magnetic hysteresis loop independent of the annealing condition. The saturation magnetization is about 5.4×104 emu/kg. The saturation field and the coercivity are estimated to be 4.38×105 and 3.06×104 A/m, respectively. The crystalline structure ofFe nanoparticles in the composites does not change with the annealing condition. The annealing condition cannot destroy the polymer backbones.     

Dependence of mechanical behavior on grain size of metastable Ti–Nb–O titanium alloy

Cold-rolled metastable β-type Ti–38Nb-0.2O alloy was subjected to annealing treatment to obtain different precipitates and grain sizes. The influence of annealing on microstructure and mechanical properties was investigated. The alloy annealed at 673 ?K or 773 ?K exhibited a single-stage yielding with high strength and low uniform elongation, due to the residual work hardening and the precipitation of ω or α phases. The alloy annealed at above 873 ?K exhibited an obvious double yielding behavior resulting from the stress-induced martensitic transformation. The grain growth kinetics of single β phase alloy is sensitive to temperature, and it is suggested that the existence of oxygen decreases the grain growth exponent and increases the required activation energy for grain growth. The critical stress for slip decreased monotonously with the increase of grain size, following the classic Hall-Petch relationship. However, the critical stress for martensitic transformation decreased to a minimum and then increased again, as the grain size increased. The results are worth for design of the heat-treatment parameters of the Ti–38Nb-0.2O alloy for engineering applications.     

Doping effect on thermoelectric properties of nonstoichiometric AgSbTe<Subscript>2</Subscript> compounds

Nonstoichiometric ternary thermoelectric materials Ag_0.84Sb_1.15M_0.01Te_2.16 (M=Ce, Yb, Cu) were prepared by a direct melt-quench and hot press process. The carrier concentration of all the samples increased after doping. Thermoelectric properties, namely electrical conductivity, Seebeck coefficient, and thermal conductivity, were measured from 300 to 673 K. The phase transition occurring at about 418 K representing the phase transition from β-Ag₂Te to α-Ag₂Te influenced the electrical transport properties. The electrical conductivities of Ce and Yb doped samples increased after doping from 1.9×10⁴ to 2.5×10⁴ and 2.3×10⁴ S·m⁻¹, respectively, at 673 K. Also, at room temperature, the Seebeck coefficient of the Ce doped sample relatively increased corresponding to the high carrier concentration due to the changes in the band structure. However, all the thermal conductivities increased after doping at low temperature. Because of the higher thermal conductivity, the dimensionless figure of merit ZT of these doped samples has not been improved.     

Optical parameters induced by phase transformation in RF magnetron sputtered TiO2nanostructured thin films

Pure TiO2 thin films were deposited onto quartz substrates using a ceramic TiO2 target at an elevated substrate temperature of 573 K by RF magnetron sputtering, and an analysis of structural, optical and photoluminescence characteristics of the films upon phase transformation is reported in this paper. Structural investigations using X-ray diffraction revealed that the as-deposited film was amorphous in nature. Thermal annealing for 2 h at 873 K in air resulted in the formation of anatase phase, and a phase transformation to rutile was observed at 1073 K.An increase in grain size and an improvement in crystallinity were also observed on annealing. Rod- like rutile crystallites were observed in the SEM images of the film annealed at 1273 K. As-deposited films and films annealed up to 1073 K were highly transparent in the visible region with a transparency 480%. Optical band gap of the films decreased upon thermal annealing which is attributed to phase transformation from amorphous to anatase and then to rutile. Optical parameters such as refractive index, optical conductivity and optical dielectric constant increased with increase in annealing temperature. Since rutile is the optically active phase, the superior refractive index of the film annealed at 1073 K along with its high transparency in visible region suggests the application of this film in antireflective coatings. Photoluminescence emission of maximum intensity was observed for the film annealed at 873 K, which exhibits anatase phase. Intense blue emission observed in this film makes it suitable for use in optoelectronic display devices.     

(Nd0.62 Li0.15)TiO3陶瓷的制备及其热电性能

采用固相反应法与无压烧结法相结合制备了ABO₃型钙钛矿(Nd_0.62Li_0.15)TiO₃晶体陶瓷材料,并对其热电性能进行了表征.高分辨率透射电镜观察显示,制备的材料具有纳米超晶格结构,导致材料表现出玻璃态热传导特征且热导率小于2W/(m·K),该玻璃态热传导源于超晶格结构形成的大量纳米域界面对声子的强烈散射.A位空位填充使材料的电子电导率得到了明显改善,但对材料的热导率影响不大.塞贝克系数因为TiO₆八面体的扭曲而受到一定的影响.在测试温度范围内,块体陶瓷在500K时得到了最高的无因次热电优值(ZT)0.019.     

PbTe热电材料的合金化研究

[目的]探索PbTe热电材料的合金化方法。[方法]利用机械合金化方法和高频熔炼方法快速制备PbTe热电材料。首先,通过调整Pb和Te成分配比,球磨时间,制备出品质较好的PbTe热电材料;其次,利用高频熔炼的方法制备PbTe材料;最后对所制备的样品进行X射线衍射(XRD)和扫描电镜(SEM)测试和分析,比较两种方法制备样品的优缺点。[结果]机械合金化制备的PbTe样品退火时,细化的晶粒开始回复和再结晶,结晶度明显增加,但是仍然低于高频熔炼的样品,且退火后,块状PbTe材料中存在大量的缺陷和晶格的畸变。[结论]通过机械合金化制备的PbTe样品结晶度明显低于高频炉制备的样品。     

氧化锆试样电子导电特征氧分压的测定

采用双电池电动势法测定了氧化镁部分稳定的氧化锆试样在1633—1729K温度范围内的电子导电特征氧分压，并计算了氧化锆试样在空气、碳饱和铁液等气氛中的氧离子迁移数。结果表明：可以用双电池电动势法评估氧化锆试样的电子导电特征氧分压的大小。对于实验中选用的2．18％氧化镁部分稳定的氧化锆试样在1683K空气条件下，氧离子迁移数等于1，在碳饱和铁液条件下，氧离子迁移数较小。     

化学镀Zn对n型Bi2Te2.4Se0.6合金热电性能的影响

为了研究化学镀Zn对n型Bi2Te2.4Se0.6材料的热电性能的影响及作用机制,采用化学镀法制备n型Zn/Bi2Te2.4Se0.6纳米粉体,并结合放电等离子烧结烧制成块体材料,n型Zn/Bi2Te2.4Se0.6热电材料的Seebeck系数(SS)提升,热导率显著降低,其中0.15％Zn/Bi2Te24Se06的热导率最低,在371 K达到最小值0.74 W/(m·K),这是由于载流子浓度的降低引起电子热导减小,以及第二相和晶界增多引起声子散射造成晶格热导降低.结果表明,0.15％Zn/Bi2Te2.4Se0.6的热电优值(ZT)有很大的提升,在421 K达到1.06.     

Thermoelectric properties of phase separated Ti substituted Zr_(0.75)Hf_(0.25)NiSn_(0.985)Sb_(0.015) half-Heuslers

Sb is a very effective dopant for ZrNiSn based half-Heusler alloys.The effect of Ti substitution on Zr_(0.75)Hf_(0.25)NiSn_(0.985)Sb_(0.015) half-Heusler(HH) semiconductor alloys has been investigated to explore the structural modifications and composition variation.TixHf_(0.25) Zr_(0.75-x)NiSn_(0.985)Sb_(0.015)(x=0,0.15,0.30,0.45) alloys were synthesized by induction melting.A set of samples was also annealed for comparative studies.The samples were then sintered using plasma activated sintering(PAS) technique.XRD results confirmed the existence of ZrNiSn type HH compounds.Backscattered electron(BSE) images showed phase separations in the samples.Ti substitution improved the carrier concentration and electrical conductivity of the alloys.Moreover,thermal conductivity was also significantly reduced due to the enhanced phonon scattering.Consequently,a ZT value of 1.11 at 873 K was obtained for 30% Ti substituted(annealed) sample.     

Gd2-xNdxZr2O7烧绿石的高温高压快速合成

为了探索模拟三价锕系核素在Gd2Zr2O7基材中的快速固化方法,按照化学计量关系Gd 2-x Nd xZr2O7(x=0.42和x=0.86)设计配方,以Gd2O3,ZrO2和Nd2O3(Nd3+作三价锕系核素替代物)粉体为原料,进行了高温高压合成实验。制备的样品通过X射线衍射分析和扫描电镜分析表明:在压力分别为3 GPa,3.5 GPa,4 GPa,温度为1 573 K,1 673 K条件下保温保压15 min,获得了单相烧绿石结构的Gd 2-x Nd xZr2O7致密烧结体。该方法可为锆基烧绿石陶瓷固化锕系核素提供一种快速高效的技术途径。     

Improving thermoelectric properties of p-type Bi_2Te_3-based alloys by spark plasma sintering

High-performance(Bi_2Te_3)_x(Sb_1Te_3)_(1-x) bulk materials were prepared by combining fusion technique with spark plasma sintering,and their thermoelectric properties were investigated.The electrical resistivity and Seebeck coefficient increase greatly and the thermal conductivity decreases significantly with the increase of Bi_2Te_3 content,which leads to a great improvement in the thermoelectric figure of merit ZT.The maximum ZT value reaches 1.33 at 398 K for the composition of 20%Bi_2Te_3-80%Sb_2Te_...     

镁含量和热处理对Zn_(1-x)Mg_xO薄膜晶体结构的影响

采用溶胶-凝胶法在玻璃衬底上制备Zn1-xMgxO(x=0.1、0.2、0.3、0.4、0.5、0.6(mol))薄膜.X射线衍射谱测试结果发现,在0.1相似文献   

Improving thermoelectric properties of p-type Bi2Te3 -based alloys by spark plasma sintering

High-performance (Bi2Te3)x(Sb2Te3)1?x bulk materials were prepared by combining fusion technique with spark plasma sintering, and their thermoelectric properties were investigated. The electrical resistivity and Seebeck coefficient increase greatly and the thermal conductivity decreases signi ficantly with the increase of Bi2Te3 content, which leads to a great improvement in the thermoelectric figure of merit ZT. The maximum ZT value reaches 1.33 at 398 K for the composition of 20%Bi2Te3-80%Sb2Te3 with 3% (mass fraction) excess Te.     

退火对表面纳米化纯钛热稳定性的影响

采用表面机械研磨技术实现纯钛材料表面纳米化,并研究了纳米化处理后的材料表层组织结构,详细分析了样品表层纳米晶组织在不同温度、不同时间退火后的热稳定性.结果表明:纯钛TA2经过表面机械研磨处理后可以在表面形成等轴且取向随机的纳米晶层,晶粒尺寸约为12nm.对表面纳米化样品退火后发现,表层纳米晶组织在773 K以下温度退火后具有良好的热稳定性,晶粒尺寸没有明显增大;在773 K温度退火150min后晶粒尺寸稍有增大,而在773 K温度退火240min后晶粒尺寸明显增大,且横截面显微硬度也比表面纳米化后未退火样品显著下降,良好的热稳定性消失.     

BaPbO3与BaTiO3陶瓷的导电特性比较

从BaPbO3与BaTiO3多晶态陶瓷的缺陷结构出发,结合不同气氛下烧成试样的室温电导率,探讨两种材料的导电特性与晶体缺陷结构之间的关系,从微观本质上阐述晶体缺陷对材料电学性能的影响.结果表明:BaPbO3与BaTiO3不同的缺陷结构决定了两种材料具有不同的电学性能;BaPbO3材料中受主能级较浅,受主中心所束缚的空穴很容易跃迁至价带形成导电载流子,在氧化气氛下烧成的试样呈高导电性;BaTiO3材料中受主能级较深,氧化气氛下烧成的试样为绝缘体.     

静态再结晶处理对Co36Fe36Cr18Ni8Ti2合金力学性能与耐腐蚀性的影响

对冷变形后的Co₃₆Fe₃₆Cr₁₈Ni₈Ti₂合金在700 ℃和800 ℃下再结晶退火,制备成具有高强度及良好耐蚀性的多主元合金。采用电子背散射衍射（electron back-scattered diffraction, EBSD）表征了合金的相分布、再结晶组织以及晶界分布等微观结构特征,采用静态拉伸试验测试了合金的力学性能。结果表明,700 ℃退火的合金断后伸长率较低,但其抗拉强度与屈服强度分别达到了1 038和956 MPa。采用电化学工作站与扫描电子显微镜（scanning electron microscope, SEM）表征了合金在模拟体液中的耐蚀性。结果表明,700 ℃退火的样品具有较好的耐蚀性,腐蚀后的样品表面较为均匀。结合力学性能可知,700 ℃退火的样品具有作为新型医用金属材料的潜力。     

高优值P型(BiXSb1-X)2Te3热电材料的优化制备工艺

根据影响 P型 (Bi XSb1 - X) 2 Te3半导体热电材料优值系数的主要因素和大量实验结果 ,采用高纯原料、筛选配方、慢速区熔长晶及退火等优化工艺 ,在晶锭的相当长的范围内获得了晶体结构完整、热电性能均匀、优值系数高达 3.46的半导体热电材料