Study of phase separation in Ga25Se75 xTex chalcogenide thin films

The effects of composition and thermal annealing in between glass transition and crystallization temperature on the optical and structural properties of Ga25Se75-xTex were investigated. The glass transition and crystallization temperature of the synthesized samples was measured by non-isothermal DSC measurements. Amorphous thin films of Ga25Se75-xTex glasses were grown onto ultra clean glass/Si wafer (100) substrates using the vacuum evaporation technique. The effect of thermal annealing on the optical gap (Eg) for Ga25Se75-xTex thin films in the temperature range 358-388K is studied. As-prepared and annealed thin films were characterized by X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and optical absorption. Thermal annealing was found to be accompanied by structural effects, which in turn, lead to changes in the optical constants. The optical absorption coefficient (a) for as-deposited and thermally annealed films was calculated from the absorbance data. From the knowledge of absorption coefficient at different wavelengths, the optical band gap (Eg) was calculated for all compositions of Ga25Se75-xTex thin films before and after thermal annealing. Results indicate that allowed indirect optical transition is predominated in as-deposited and thermally annealed thin films. The influence of Te incorporation and thermal annealing in Ga25Se75-xTex thin films results in a gradual decrease in the indirect optical gap, this behaviorcan be explained as increased tailing. The decrease in optical band gap and an increase in absorption coefficient and extinction coefficient with thermal annealing can be attributed to transformation from amorphous to crystalline phase.     

Effect of Mg content on the structural and optical properties of Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>O alloys

Mgx Zn1–x O thin films with x = 0, 0.11, 0.28, 0.44, 0.51, and 0.65 were grown by plasma-assisted molecular beam epitaxy on (0001) sapphire substrates. X-ray diffraction measurement reveals that phase separation of the Mgx Zn1–x O films occurred at x =0.44 and 0.51. Optical absorption spectra show that the absorption edges of the films shift to high-energy side with increasing Mg contents. In resonant Raman spectra, multiple-order Raman peaks originating from ZnO-like longitudinal optical phonons were obser...     

Microstructures and optical properties of sol-gel derived TiO2 anatase thin films

TiO₂ anatase thin films on quartz substrates were prepared with sol-gel method. The dry gel films, made by spin coating 10 times, were calcined at various temperatures. From X-ray diffraction analyses, it is found that the anatase to rutile phase transformation temperature of the films is higher than 850°C, the films are preferentially oriented on (0 0 1) plane, i. e.c-axis oriented. The thickness, refractive indexes, absorption coefficients and extinction coefficients of the films were determined from UV-Vis transmission spectra of the films using a UV-Vis spectrophotometer. The thickness of the films is about 570 nm. The refractive indexes, absorption coefficients and the extinction coefficients of the present films are larger than the values of anatase films prepared by sputtering. This indicates that the films made with sol-gel method are very dense. Biography: LIU Zhong-chi(1967-), male, Master candidate. Research direction: non-linear optical materials.     

Microstructure and optical absorption properties of Au/NiO thin films

Au nanoparticles dispersed NiO composite films were prepared by a chemical solution method. The phase structure, microstructure, surface chemical state, and optical absorption properties of the films were characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, and Uv-vis spectrometer. The results indicate that Au particles with the average diameters of 35–42 nm are approximately spherical and disperse in the NiO matrix. The optical absorption peaks due to the surface plasmon resonance of Au particles shift to the shorter wavelength and intensify with the increase of Au content. The bandwidth narrows when the Au content increases from 8.4wt% to 45.2wt%, but widens by further increasing the Au content from 45.2wt% to 60.5wt%. The band gap E_g increases with the increase of Au contents from 8.4wt% to 45.2wt%, but decreases by further increasing the Au content.     

Pixel switching of epitaxial Pd/YHx/CaF2 switchable mirrors

Exposure of rare-earth films to hydrogen can induce a metal-insulator transition, accompanied by pronounced optical changes. This 'switchable mirror' effect has received considerable attention from theoretical, experimental and technological points of view. Most systems use polycrystalline films, but the synthesis of yttrium-based epitaxial switchable mirrors has also been reported. The latter form an extended self-organized ridge network during initial hydrogen loading, which results in the creation of micrometre-sized triangular domains. Here we observe homogeneous and essentially independent optical switching of individual domains in epitaxial switchable mirrors during hydrogen absorption. The optical switching is accompanied by topographical changes as the domains sequentially expand and contract; the ridges block lateral hydrogen diffusion and serve as a microscopic lubricant for the domain oscillations. We observe the correlated changes in topology and optical properties using in situ atomic force and optical microscopy. Single-domain phase switching is not observed in polycrystalline films, which are optically homogeneous. The ability to generate a tunable, dense pattern of switchable pixels is of technological relevance for solid-state displays based on switchable mirrors.     

TiO2-x(V2O5)纳米复合薄膜的光吸收

采用溶胶 -凝胶技术 ,以Ti(C4H9O) 4 和V2 O5粉末为原材料制备了纳米结构的TiO2 -x(V2 O5) (x为V2 O5的质量分数 ,分别为 10 % ,2 0 % ,30 % ,10 0 % )复合薄膜 .采用原子力显微镜观察薄膜的表面形貌 ;使用UV VIS NIR分光光度计测量了复合薄膜在紫外 -可见光波段的透射率和反射率光谱 ,研究其光吸收特性 .实验结果表明 :复合薄膜具有纳米颗粒结构 ;随着V2 O5用量的增加 ,复合薄膜在紫外光区的吸收逐渐增加 ,(αhv) 1/ 2 与hv存在线性关系 ,光学带隙由纯TiO2 的 3.36eV减小为x =30 %时的 2 .83eV ,光学带隙与x满足Eg(x) =Eg(0 ) [Eg(1)-Eg(0 ) -b]x bx2 关系式 ;复合薄膜光吸收边缘红移起因于V2 O5复合后薄膜中定域态宽度的增加 .     

MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices

Two kinds of short-period type II superlattices(SLs)InAs(6 monolayers(MLs))/GaSb(3 MLs)and InAs(8 MLs)/GaSb(8 MLs)which can serve for mid-infrared(MIR)detection have been grown by molecular beam epitaxy(MBE)on p-type GaSb(100)substrates.The cutoff wavelength for the two superlattices(SLs)was found to be around 4.8 lm at 300 K.The high resolution X-ray diffraction(HRXRD)measurements indicated that the InAs(8 MLs)/GaSb(8 MLs)SLs have better crystalline quality than that of the InAs(6 MLs)/GaSb(3 MLs)SLs.However,compared with infrared absorption in the 2.5–4.3 lm range,the optical absorption of InAs(6 MLs)/GaSb(3MLs)SLs was more excellent.This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.     

铜掺杂纳米氧化锌薄膜的制备及光学特性

氧化锌（ZnO）是一种新型稀磁半导体材料,有优良的磁学及光学性质,透明度高,常温发光性能优异.根据半导体掺杂原理,以氧化锌为原料,过渡金属元素铜为掺杂元素,采用化学气相沉积法（CVD）,制备了铜掺杂纳米氧化锌薄膜.利用晶向显微镜观察ZnO：Cu在衬底硅片上的表面形貌和生长情况,利用光致发光谱和分光光度计分析了样品的光发射和光吸收特性,研究了薄膜的伏安特性.发现铜掺杂对氧化锌薄膜的光吸收和光发射以及表面伏安特性都有很大的影响.随铜掺杂含量的增加,光吸收强度明显增大,光发射峰更加丰富.适当掺杂量的情况下,电流明显增大,但掺杂量太大,会引入缺陷和晶界,反而会使漏电流增大.10％-20％掺杂量为比较理想的掺杂量.     

CuInSe<Subscript>2</Subscript> thin films obtained by pulse-plating electrodeposition technique with novel pulse wave

CuInSe₂ films were electrodeposited onto indium tin oxide (ITO) substrate in constant current mode using bell-like wave modulated square wave in aqueous solution. The films obtained at different pulse frequencies were characterized by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). UV-Vis-NIR absorption spectro- scopy was used to study the optical properties of these films. The results showed that the chalcopyrite phase CuInSe₂ films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency. The crystallinity of CuInSe₂ films could be further improved after annealing treatment. Despite this, we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS elec-trodeposition technique, which is significant to the low-cost CIS thin film solar cell production.     

Preparation and optical properties of composite thin films with embedded InP nanoparticles

InP nanoparticles embedded in SiO₂ thin films were prepared by radio-frequency magnetron co-sputtering. We analyzed the structure and growth behavior of the composite films under different preparation conditions. X-ray diffraction and Raman spectroscopy analyses indicate that InP nanoparticles have a polycrystalline structure. The average size of InP nanoparticles is in the range of 3–10 nm. The broadening and red shift of the Raman peaks were observed, which can be interpreted by the phonon confinement model. Optical transmission spectra indicate that the optical absorption edges of the films can be modulated in the visible light range. The marked blue shift of the absorption edge with respect to that of bulk InP is explained by the quantum confinement effect. The theoretical values of the blue shift predicted by the effective mass approximation model are different from the experimental results for the InP-SiO₂ system. Analyses indicate that the exciton effective mass of the InP nanoparticles is not constant and is inverse relative to the particles radius, which may be the main reason that results in the discrepancy between the theoretical and the experimental result. We discussed the possible transition of the direct band gap to the indirect band gap for InP nanoparticles embedded in SiO₂ thin films.     

Growth and optical absorption properties of silver nanorod arrays in porous anodic aluminum oxide templates

Silver nanorod arrays have been fabricated by alternat-ing current(AC) and pulsed direct current(DC) electrodeposition in porous anodic aluminum oxide(AAO) templates with controlled pore diameters of 19,38,and 65 nm,respectively.The variation of their optical absorption properties with the incident angle and the nanorods length(corresponding to the electrodeposition time) has been investigated.Optical absorption spectra show that the posi-tion of longitudinal surface plasmon resonance(LSPR) peak has a small blueshift with the increase of incident angle of the excitation light.While the aspect ratio of the nanorods increases,the position of LSPR peak first redshifts and then blueshifts to a certain wave-length.Furthermore,the position of LSPR peak can be tuned,ranging from 550 nm to 900 nm,which makes it possible to cou-ple various wavelength of excitation source to assist radiative en-ergy transfer to the acceptor.     

<Emphasis Type="Italic">In-situ</Emphasis> growth and spectrum characterization of ZnSe nanocrystals in silica gel-glasses

ZnSe nanocrystals were in-situ grown in silica gel-glasses by using sol-gel process and the reductive thermal treatment. The transparent, homogeneous ZnSe/SiO2 nanocomposites with the yellow color were first obtained. We used X-ray diffraction pattern (XRD), UV-VIS optical absorption and Raman scattering to characterize the spectrum properties of ZnSe nanocrystals. The broadening of XRD peaks, the blueshift of interband optical absorption edge and the change of Raman spectrum were observed. From these experimental results, we theoretically calculated the size of ZnSe nanocrystals. The results of XRD, optical absorption and Raman spectra were approximately consistent, with the mean diameter of about 4.6 nm. The discrepancies from different methods were discussed.     

zr掺杂对Ti02光学性质的影响

利用电子束沉积方法在玻璃基底上制备了TiO2薄膜及zr掺杂TiOz薄膜．采用拉曼光谱仪和分光光度计对膜的结构和吸收光谱进行了表征;研究结果表明：退火温度为773K时,沉积得到的Ti02薄膜为锐钛矿结构的薄膜;Zr掺杂锐钛矿型TiO2,导致带隙减小,掺杂后在350—450nm附近的光吸收系数增大,TiO2的吸收带产生红移,增强了TiO2的光催化活性;1％掺杂量对光的吸收系数于大5％的掺杂量．     

Zr 掺杂对锐钛矿型TiO2 电子结构和光学性质的影响

本文采用密度泛函理论的平面波超软赝势方法研究了Zr 掺杂对锐钛矿型TiO₂ 电子结构和光学性质的影响, 计算了Zr 掺杂前后锐钛矿型TiO₂ 的电子态密度分布、能带结构、光吸收系数等性质, 定性地分析了掺杂前后电子结构和光学性质的变化. 研究结果表明: Zr 掺杂锐钛矿型TiO₂, 导致带隙减小, 掺杂后在360~400nm 附近的光吸收系数增大, TiO₂ 的吸收带产生红移, 增强了TiO₂ 的光催化活性, 理论与实验结果 一致.     

P型重掺杂硅薄膜及其在叠层电池隧道结中的应用

本文采用等离子体增强化学气相沉积(PECVD)方法沉积出不同掺杂浓度的硅薄膜.利用原子力显微镜(AFM),IR和Raman散射等手段对硅薄膜的微结构进行了研究.通过测试薄膜的暗电导和激活能,对硅薄膜的电学特性进行了分析.为提高隧道结的复合速率,在隧道结的N层、P层之间插入不同掺杂浓度的硅薄膜做复合层,并测试了隧道结的电流-电压特性和透光性.实验结果表明:随着掺杂气体比例R(B2H6/SiH4)的增加,硅薄膜逐渐由微晶硅转变为非晶硅,薄膜的微结构和电学特性随之改变.隧道结复合层的最佳掺杂气体比例R=0.04,在该条件下的薄膜是含有少量品粒的非晶硅.使用该复合层的隧道结具有阻抗小、接近欧姆接触、光吸收少等优点.     

溶胶-凝胶法制备TiO_2薄膜及其光学特性

采用溶胶 -凝胶方法在二氧化硅玻璃基片上制备了TiO2 薄膜 ,通过测量薄膜在紫外 -可见光波段的透射率和反射率光谱 ,对其光学特性和吸收边缘进行了研究 .实验结果表明 ,吸收边缘大约在 35 0nm附近 ,并且随热处理温度的升高 ,吸收边缘向长波方向移动 ,锐钛矿相的禁带宽度比金红石相的禁带宽度高 0 .15eV     

Influence of catalyst on structural and morphological properties of TiO2 nanostructured films prepared by sol–gel on glass

Transparent TiO2 thin films have been prepared by the sol-gel method using titanium alkoxides as precursors.Thin films were deposited on glass supports by the dip-coating technique.The TiO2 layer acts as a self-cleaning coating generated from its photocatalysis and photoinduced superhydrophilicity.The crystalline structure of TiO2 films was dominantly identified as the anatase phase,consisted of uniform spherical particles of about 14-50 nm in size,which strongly depends upon catalyst-type and heat treatment temperature.Increasing heat treating temperature can lead to an increase in crystalline size.The results indicated that the sample S.S(sample derived from sol containing sulfuric acid as catalyst) exhibits superhydrophilic nature and better photocatalytic activity,which can be attributed to its higher anatase content and lower crystalline size.Morphological studies,carried out using Atomic Force Microscopy(AFM),confirm the presence of crystalline phase with such a grain size and low surface roughness.Thus,the applied films exhibiting high photocatalytic activity,superhydrophilic behavior,and low surface roughness can be used as an efficient self-cleaning coating on glass and other optical applications.     

预制层结构对CZTS薄膜微观组织和光学性能的影响

研究了叠层顺序对磁控溅射沉积铜锌锡硫（CZTS）吸收层的微观结构、表面形貌和光学性能的影响.试验结果表明：当预制层结构为Cu/ZnS/SnS₂时,制备的CZTS薄膜在（112）晶面具有择优生长取向,并具有较好的结晶一致性,在288,335和368 cm^-1处呈现出特征拉曼（Raman）峰,薄膜表面晶粒较大、形状规则、薄膜空隙较少、比较致密,可见光范围内的吸收系数较高,光学带隙1.5 eV,适合作为CZTS薄膜太阳能电池的吸收层;当预制层结构为SnS₂/Cu/ZnS和ZnS/SnS₂/Cu时,由于在预制层硫化过程中造成一定的Zn和Sn流失,使CZTS薄膜中含有CuS杂相,导致薄膜表面质量下降,禁带宽度增加,不适合做CZTS薄膜太阳能电池的吸收层.     

络合剂对ZnO薄膜的结构及其光催化性能的影响

采用溶胶-凝胶技术,以醋酸锌为前驱体,分别以乙醇胺、二乙醇胺、三乙醇胺为络合剂,在玻璃载玻片上制备了ZnO薄膜。利用X射线衍射(XRD)、原子力显微镜(AFM)、紫外-可见(UV-Vis)吸收光谱和X射线光电子能谱(XPS)等技术研究了以不同络合剂制备的ZnO薄膜的结构、表面形貌和光吸收性能以及表面化学态。以浸渍在ZnO薄膜表面的亚甲基兰为目标降解物评价薄膜的光催化活性。结果表明,乙醇胺为络合剂制备的ZnO薄膜具有良好的c轴择优取向,主要是由较小的晶粒扩散距离所致;以二乙醇胺为络合剂制备的ZnO薄膜显示较高的光催化活性,可能是由相对较好的光吸收性能以及较多的氧缺陷所致。     

Electroabsorption spectrum of substituted polyphenylacetylenes

Electroabsorption (EA) measurements on thin films of poly[ o (trimethylsilyl) phenylacetylene] and poly[ o (trimethylsilylmethyl) phenylacetylene] have been performed. The spectral change induced by an exernal electric field (EA spectra) has been observed, which shows the similar shape of the second derivative of the optical absorption spectra. The change in the absorption Δ α is obtained from the EA spectrum, and Δ n is calculated through Kramers_Krong transformation. The optical properties of substituted polyphenylacetylenes (PPAs) were discussed.