沉积温度对类金刚石薄膜性能的影响

液相法制备工艺简单、成本低等,已成为制备类金刚石薄膜的热点方法,但适合工业化生产的制备工艺参数尚不明确。以Si单晶为基底,通过液相沉积法在Si表面制备类金刚石薄膜,研究了沉积温度与其摩擦学性能之间的关系。结果表明:在40℃条件下制备的类金刚石薄膜表面光滑平整、硬度最高。此时类金刚石薄膜的干摩擦系数最小,耐磨性最强,具有良好的摩擦学性能。     

基底对类金刚石薄膜摩擦学性能的影响

为了研究不同基底对类金刚石薄膜摩擦磨损性能的影响,采用等离子体增强化学气相沉积方法在高速钢、SiC和304不锈钢基底上成功制备了类金刚石薄膜。采用SEM,TEM,Raman测试手段对膜层的微结构进行了表征:SEM表征结果显示膜层总厚度约为6.5μm,而且层与层之间有明显的界面;TEM表征结果显示沉积的膜层为无定型结构;Raman光谱分析显示沉积的薄膜存在明显的G峰和D峰,可以确定沉积的薄膜为类金刚石薄膜。摩擦测试结果显示,基底对类金刚石薄膜摩擦磨损性能具有显著影响,对于不同基底,钢球对偶上均存在明显的转移膜,高速钢基底的磨痕宽度最小,而且沉积在高速钢基底上的类金刚石薄膜具有最低的磨损率,摩擦系数约为0.1。采用Raman光谱对不同基底磨痕表面微结构进行了分析,认为高速钢基底具有最低磨损率可归因于其磨痕的石墨化程度低。研究可为制备具有优异摩擦磨损性能的类金钢石薄膜提供参考。     

HIPIB烧蚀等离子体沉积DLC薄膜结构及性能

利用强流脉冲离子束(HIPIB)烧蚀等离子体在Si(100)基体上快速沉积类金刚石(DLC)薄膜．电压为250keV,柬流密度为250A／cm^2,脉宽为70ns的离子柬(主要由碳离子和氢离子组成)聚焦到石墨靶材上．使石墨充分电离产生稠密的烧蚀等离子体,在石墨靶的法线方向的Si基体上沉积出非晶的DLC薄膜,基片温度选择25℃和100℃,XPS分析显示DLC薄膜中sp^3C的含量达到40％．扫描电镜和原子力显微镜分析得知薄膜表面比较光滑,100℃时沉积的DLC薄膜的表面更光滑,表面粗糙度为0．927nm,其摩擦因数为O．10;TEM分析表明DLC薄膜的相结构是非晶的;X射线衍射分析得出薄膜的宏观残余应力为压应力,其大小约为4GPa．     

Controllable synthesis of Ni-catalyzed tetragonal tungsten nanowires via chemical vapor deposition

Controllable synthesis of Ni-catalyzed tetragonal tungsten nanowires via chemical vapor deposition     

采用热丝化学气相沉积法制备SiCN薄膜的研究

采用热丝化学气相沉积(HFCVD)系统,在单晶Si衬底上制备SiCN薄膜。所采用的源气体为高纯的SiH4,CH4和N2。用原子力显微镜(AFM)、X线衍射谱(XRD)和X线光电子能谱(XPS)对样品进行表征与分析。研究结果表明:SiCN薄膜表面由许多粒径不均匀、聚集紧密的SiCN颗粒组成;薄膜虽然已经晶化,但晶化并不充分,存在着微晶和非晶成分,通过Jade软件拟合计算出薄膜的结晶度为48.72%;SiCN薄膜不是SiC和Si3N4的简单混合,薄膜中Si,C和N这3种元素之间存在多种结合态,主要的化学结合状态为Si—N,Si—N—C,C—N,N=C和N—Si—C键,但是,没有观察到Si—C键,说明所制备的薄膜形成了复杂的网络结构。     

Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

A corona discharge phasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array ,The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom.The characterization results by the scanning electron microscopy,transmission electron microscopy,energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 μm, and the carbon anotubes are mainly restrained within the channels of templates.     

Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

Carbon nanotube array plays an important role in the area of nanomaterials due to its potential applications, e.g. as field emitter in flat panel display[1,2] and as template for synthesizing arrays of other important nanomaterials[3]. Anodic aluminum oxide (AAO) template possesses an ordered porous structure that is formed through self-or- ganization during anodization[4,5], and is widely used to synthesize one-dimensional nanomaterial arrays[6]. Carbon nanotubes are usually assembled into t…     

石墨烯薄膜的化学气相法制备及光、电特性研究

利用化学气相沉积方法制备了石墨烯薄膜,并研究了其光电特性。以乙醇做反应原料、氩气作为携载气体,在873 K、973 K、1 073 K的温度下合成石墨烯薄膜。应用光学显微镜观察,发现在1 073 K时能够制备大面积均匀、平整光滑的石墨烯薄膜。纳曼光谱分析结果表明:制备的石墨烯薄膜出现2 650 cm-1的石墨烯的特征峰-D强峰,同时该峰强度随温度的升高而迅速增强,说明低温不能使沉积的碳原子有效的石墨化为石墨烯,而较高的温度有助于乙醇分解并石墨化为石墨烯薄膜。在1 073 K时沉积的石墨烯薄膜具有良好的光、电特性,其电子迁移率可以达到104 cm2.(V.s)-1,光透射率达97%,因此,可用于制备石墨烯晶体管、太阳能电池等光电子器件。     

Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

Recently,chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene.In this paper,we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper,and then focus on the recent progress on the quality improvement,number of layers control and transfer-free growth of graphene.In the end,we attempt to analyze the possible development of CVD growth of graphene in future,including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders.     

溶胶-凝胶石墨涂层的表面特征与摩擦学性能

为了拓展固体润滑石墨涂层的制备方法,利用溶胶凝胶法在45钢基体上制备了4种不同质量分数的石墨涂层.扫描电镜观察表明,涂层中石墨均匀分布. X衍射分析表明,涂层中石墨以单质形式存在.摩擦学实验表明 石墨涂层的减摩、耐磨、抗擦伤性能十分优异,其中石墨质量分数为30%的涂层摩擦学性能最好; 涂层失效以剥落为主.     

Well-aligned carbon nanotube array membrane synthesized in porous alumina template by chemical vapor deposition

A new simple approach was devetoped for preparing wetl-aligned and monodispersed carbon nanotube (CNT) array membrane within the cylindrical pores of anodic aluminum oxide (AAO) template by chemical vapor deposition (CVD). Acetylene and hydrogen were used in the CVD process with Fe-catalyzer at 700°C under 250 Pa. Scanning etectron microscope (SEM) and transmission etectron microscope (TEM) were employed to characterize the resulting highly-oriented uniform hollow tube array which had a diameter of about 250 nm, a tube density of 5.3x10⁸ cm² and a length of about 60 μm. The length and diameter of the tubes depend on the thickness and pore diameter of the template. The growth properties of the CNT array film can be achieved by controlling the structure of the template, the particle size of Fe-catalyzer, the temperature in the reactor, the flow ratio and the deposition time. The highly-oriented and uniform CNT array membrane fabricated by this simple method is very much useful in a variety of applications.     

Fabrication of tungsten films by metallorganic chemical vapor deposition

Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition (MOCVD). The chemical purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited films both before and after annealing treatment were investigated by X-ray energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and four-point probe method. It is found that the films deposited at 460℃ are metastable β-W with (211) orientation and can change into α-W when annealed in high-purity hydrogen atmosphere at high temperature. There are small amounts of C and O in the films, and the W content of the films increases with increasing deposition temperature and also goes up after annealing in high-purity hydrogen atmosphere. The films have columnar microstructures and the texture evolution during their growth on copper substrates can be divided into three stages. The resistivity of the as-deposited films is in the range of 87-104 μΩ·cm, and low resistivity is obtained after annealing in high-purity hydrogen atmosphere.     

几种不锈钢的拉伸应变硬化行为

采用金相、X射线衍射(XRD)、拉伸试验和洛氏硬度检测等实验方法,研究4种不锈钢(410S、430、409L和304)的室温拉伸应变硬化行为,探讨其拉伸应变行为的特征与规律.结果表明:304不锈钢的加工硬化能力远高于410S、430、409L不锈钢.而且304冷轧(固溶)态的n值(0.57)高于304热轧(空冷)态n值...     

凹坑型微织构对不锈钢/皮质骨摩擦副摩擦性能的影响

采用MMW-1型立式万能摩擦磨损试验机研究了凹坑型微织构在微量润滑条件下对4cr13不锈钢/猪骨皮质骨摩擦副的滑动摩擦性能的影响.利用激光加工技术在4cr13不锈钢盘上加工出不同尺寸的凹坑型微织构.在相同载荷、转速情况下,分析有无微织构对摩擦副摩擦系数的影响,以及凹坑型微织构的直径、间距、深度对微织构减摩性能的影响.结果表明,在试验参数范围内,微织构参数中凹坑的间距对摩擦系数的影响最显著,深度次之,直径对摩擦系数影响最小.     

玻璃陶瓷基板上铜薄膜的化学气相沉积

使用低介电常数基板和高电导率、高抗电迁移的金属Cu进行布线,可以提高高密度电子封装的传输速度和可靠性。采用乙酰丙酮铜作为前驱体,在常压下利用化学气相沉积技术对玻璃陶瓷基板进行Cu薄膜金属化。利用热重分析、X射线衍射和扫描电子显微镜等技术对前驱体、Cu薄膜进行分析观察。结果表明:影响Cu导体的电阻的主要因素是沉积温度。在温度为290～310℃,N2气流量为200～350mL/min和H2气流量为450～600mL/min的条件下,获得了致密的Cu薄膜,Cu导体方块电阻为25mΩ。     

NiCo/纳米SiO2复合镀层的耐腐蚀及其摩擦学性能研究

采用电沉积法在铜基底上沉积了NiCo/纳米SiO2复合镀层和NiCo合金镀层,用扫描电子显微镜、CHI660A电化学工作站及UMT-2M摩擦磨损测试机考查了镀层的表面形貌、磨损形貌、耐腐蚀性能及摩擦学性能.结果表明,纳米SiO2颗粒的加入抑制了NiCo晶体的增长,使得镀层中NiCo颗粒明显得到细化,镀层更加均匀致密;在相同的腐蚀和摩擦条件下,纳米复合镀层的耐蚀性、耐磨性能明显高于NiCo合金镀层;随着镀液中纳米颗粒悬浮量的增加,复合镀层的摩擦系数先降低后增大,当镀液中SiO2纳米颗粒含量为5 g/L时复合镀层的摩擦系数最小.     

Catalyst enhanced chemical vapor deposition of nano-particle nickel films on teflon surface

Films formed with nanosized nickel particles on teflon surface were prepared by means of catalyst enhanced chemical vapor deposition (CECVD) with Ni(dmg)₂, Ni(acac)₂, Ni(hfac)₂, Ni(TMHD)₂, and Ni(cp)₂ as precursors, and complexes Pd(hfac)₂, PdCl₂ and Pd(η ³-2-methylallyl)acac as catalyst under carrier gas (H₂). The film growth rate depends on the precursors and substrate temperature. The chemical value, purity and surface morphology of the Ni particle films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The films obtained were shiny with silvery color, and consisted of grains with a particle size of 50–140 nm. The Ni was metallic of which the purity was about 90%–95% from XPS analysis. SEM micrograph showed that the film had good morphology.      

镁合金表面制备硅掺杂类金刚石膜的性能研究

将无铬化学转化新工艺与射频等离子化学气相沉积（PECVD）技术相结合,先在镁合金表面生成一层多孔结构、附着力高的化学转化膜作为过渡层,再采用PECVD技术低温沉积一层硅掺杂类金刚石（Si-DLC）薄膜复合涂层。扫描电子显微镜和拉曼光谱图分析证实,获得的薄膜由sp2和sp3键杂化的碳硅氢化合物呈层状堆积而成,薄膜均匀、平整致密;制备的薄膜为典型的类金刚石结构。原子力显微镜直观地观察到,掺杂硅的类金刚石薄膜比未掺杂的平整致密。当硅含量达到20%时,得到的DLC薄膜最为平整致密,无铬化学转化膜层均被含硅的DLC薄膜覆盖。性能测试实验表明,将化学转化膜作为中间过渡层并采用PECVD沉积含硅的DLC薄膜明显提高了镁合金基体与其的结合强度,同时也大幅度提高了镁合金的耐磨、耐高温和耐蚀性。     

沉积温度对CVD-HfC涂层微观结构和力学性能的影响

采用HfCl4-CH4-H2-Ar体系,利用化学气相沉积法(CVD)在C/C复合材料表面制备HfC涂层.利用X线衍射仪、扫描电子显微镜和纳米压痕测试仪对涂层的微观结构和力学性能进行表征与分析.研究沉积温度对HfC涂层的物相组成、沉积速率、微观结构和力学性能的影响.研究结果表明:在1 400～1 600℃沉积温度内,沉积涂层均由单一的立方HfC组成.随着沉积温度的提高,HfC涂层沉积速率逐渐增加;涂层表面HfC晶粒的择优取向面由(220)向(200)转变,涂层组织结构由细柱状晶转变为粗大柱状晶.HfC涂层的显微硬度和弹性模量分别在16～21 GPa和247～282 GPa之间.1 500℃沉积HfC涂层的力学性能最佳,其显微硬度和弹性模量分别达到20.29GPa和282.34GPa.