Differenc es between amorphous indium oxide thin films

A series of 60~nm thick indium oxide thin-films,all amorphous as determined by x-ray diffraction,were found to have physical and electrical properties that depended on the temperature of deposition.The carrier mobility and flm conductivity decreased with decreasing deposition temperature;the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed.The density of the flm also decreased with deposition temperature from 7.2g/cm3 at+50℃ to 5.3g/cm3 at 100℃.     

Electrical and band-gap properties of amorphous zinc–ind ium–tin oxide thin films

Zinc–indium–tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%,50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In22xZnxSnxO3, where x=0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.     

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Highly transparent and conducting Al-doped Zn O(Al:Zn O) thin films were grown on glass substrates using pulsed laser deposition technique.The profound effect of film thickness on the structural, optical and electrical properties of Al:Zn O thin films was observed. The X-ray diffraction depicts c-axis, plane(002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in Zn O introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:Zn O thin films are important for applications such as transparent electromagnetic interference(EMI) shielding materials and solar cells. The obtained optical band gap(3.2–3.08 e V) was found to be less than pure Zn O(3.37 e V) films. The lowering in the band gap in Al:Zn O thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:Zn O thin films for light emitting devices(LEDs) applications. The current–voltage(I–V) measurements show the ohmic behavior of the films with resistivity(ρ) 10-3Ω cm.     

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400 ℃ ）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T are amorphous at the temperature ranging from 1, the crystalline seeds appear at T1 = 300℃, and the films 27 ℃ to 400 ℃.     

退火温度对TiO2薄膜光学性能的影响

为确定合适的TiO2薄膜退火工艺,研究了退火温度对采用中频交流反应磁控溅射技术制备的TiO2薄膜光学性能的影响.利用分光光度计测得石英玻璃基体TiO2薄膜试样的透射谱和反射谱,用包络线法和经验公式法计算出薄膜的光学常数.结果表明 TiO2薄膜的折射率随退火温度的上升而增加,低温退火时薄膜消光系数略有减小, 500 ℃退火时TiO2薄膜具有最优的光学性能.     

Sol-Gel法制备Al掺杂ZnO薄膜的微结构及电学特性

采用溶胶-凝胶法在Si(100)衬底上制备了不同浓度Al掺杂的ZnO(AZO)薄膜。XRD研究表明Al掺杂对薄膜的结晶产生明显的影响。用四探针法测量其电阻特性,表明在1 mol%Al掺杂,600℃下退火,其电阻率最低。     

Electrical properties of sulfur-implanted cubic boron nitride thin films

Cubic boron nitride(c-BN)thin films were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation.To produce a uniform depth profile of S ions in c-BN films,the implantation was carried out for the multiple energies.A slight degradation of c-BN crystallinity resulted from ion implantation can be recovered by thermal annealing,keeping the cubic phase content as high as 92%.The resistance reduces from 1010X for the as-deposited c-BN film to 108X after an S implantation of 5 9 1014ions cm-2and annealing at 1,173 K,suggesting an electrical doping effect of S dopant.The electrical resistance of the S-doped c-BN thin film decreases with increasing temperature,indicating semiconductor characteristics.The activation energy of S dopant is estimated to be 0.28±0.01 eV from the temperature dependence of resistance.     

用RF—PECVD制备的SnO2薄膜光电性质及化学成分

利用ＸＰＳ研究了ＲＦ－ＰＥＣＶＤ制备ＳｎＯ２薄膜的化学计量配比，测试了ＳｎＯ２薄膜的光学和电加热特性。结果表明：具有导电性能的ＳｎＯ２薄膜是一种非理想化学计量配比的氧化物半导体薄膜材料，薄膜还具有较高的可见光透过率和较好的电加热性能。     

Facile cathodic electrosynthesis and characterization of iron oxide nano-particles

Fe2O3 nano-particles have been synthesized by simple cathodic electrodeposition from the low-temperature nitrate bath.The morphology and crystal structure of the obtained oxide powder were analyzed by means of scanning and transmission microscopy(SEM and TEM),X-ray diffraction(XRD) and Fourier transform infrared(FTIR) spectroscopy.Thermal behavior and phase transformation during the heat treatment of as-deposited sample were investigated by differential scanning calorimetry(DSC) and thermogramimetric analysis(TGA).The results showed that the deposited Fe2O3 was composed of the nanoparticles with grain size of approximately 10-60 nm.A serious problem during cathodic electrodeposition of iron oxide was splashing of deposit into electrolyte due to its low adhesion.This problem was tackled by reducing the bath temperature and dielectric constant of solvent.     

High-energy ion treatments of amorphous As40Se60 thin films for optical applic ations

The treatment of 100 MeV Ag swift-heavy ion(SHI) irradiation with five different fluences(3 1010, 1 1011, 3 1011, 1 1012, and3 1012ions/cm2) was used to design optical and structural properties of amorphous(a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple–DiDomenico relation.Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3 1012ions/cm2was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31 10 10[esu] to 1.74 10 10[esu]. Linear refractive index initially increases from 2.80 to 3.52(for fluence3 1010ions/cm2) and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.     

氮化铁薄膜的结构及磁性研究

采用直流磁控溅射方法，以Ar／N2作为放电气体在玻璃基片上沉积了单相γFe4N薄膜，采用X射线衍射（XRD）和超导量子干涉仪（SQUID）对所制备的样品进行了结构和磁性性能分析，研究了基片温度对薄膜的结构和磁性性能的影响。     

Controlled properties of perovskite oxide films by engineering oxygen octahedral rotation

Complex perovskite oxides exhibit extremely rich physical properties in terms of magnetism, electrical transport, and electrical polarization characteristics due to the competition and coupling of many degrees of freedom. The B-site ions and O ions in perovskite form six-coordinated octahedral units, which are connected at a common vertex toward the basic framework of the perovskite oxide, providing a crucial platform to tailor physical properties. The rotation or distortion of the oxygen octahedra will tip the competing balance, leading to many emergent ground states. To further clarify the subtle relationship between emergent properties and oxide octahedral behavior, this article reviews the structure of perovskite oxides, the characterization methods of oxygen octahedral rotation and the response of transport, electrical polarization and magnetism of several typical perovskite heterostructures to oxygen octahedral rotation modes. With knowledge of how to manipulate the octahedral rotation behavior and regulate the physical properties of perovskite oxides, rationally designing the sample manufacturing process can effectively guide the development and application of novel electronic functional materials and devices.     

The preparation and characterization of amorphous SiCN thin films

Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N₂, SiH₄ and C₂H₄ as the reaction sources was used to prepare amorphous ternary Si _x C _y N _z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE _opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si₃N₄, SiC, CN _x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE _opt's of all samples are within the range of 2. 71–2. 86 eV. Foundation item: Supported by the National Natural Science Foundation of China (19975035) Biography: Li Jin-chai (1946-), male, Professor, research direction: novel functional materials films & ion beam modification of materials.     

Synthesis, structure, and optical properties of manganese phthalocyanine thin films and nanostructures

Manganese phthalocyanine(MnPc) nanostructures with different morphologies were prepared on porous anodic alumina oxide(AAO) at different substrate temperature(T_S=50 ℃,80 ℃,120 ℃,180 ℃,240 ℃) in an organic molecular beam deposition(OMBD) system.The nanostructures morphologies were studied using scanning electron microscopy(SEM) and the results showed that the nanostructures morphologies could be modulated by the control of T_S,as a result,the continuous film was obtained at 50 ℃,whereas the nanorods(NRs),nanoribbons(NBs),nanowires(NWs),nanosheets(NSs) and nanoparticles(NPs) were facilely generated as T_S increased.At the same time,the density and the uniformity of the nanostructures decreased.The results of X-ray diffraction(XRD) indicated that only the(3-phase polymorph formed throughout the growth process irrelevant to the T_S.Additionally,the ultraviolet visible(UV-Vis) absorption spectra demonstrated that the main absorption bands of MnPc nanostructures showed a remarkable band broadening as the T_S was increased.     

Tailoring soft magnetic properties of Fe-based amorphous alloys through C addition

It is known that developing Fe-based amorphous alloys with the saturation flux density(B_s) higher than 1.65 T is a major challenge.In present work,effects of C addition on magnetic properties of Fe-based amorphous alloys were systematically studied.It has been found that the addition of C can significantly increase the saturation flux density(B_s) and the magnetic flux density at 800 A/m(B_(800)) of the Fe-B-C-Si-P amorphous alloys.After the addition of C,the B_s of the amorphous alloys increase from 1.61 T(Fe_(83)B_(13)Si_3 P_1) to 1.65-1.71 T(Fe_(83)B_(13-x)C_xSi_3 P_1,x=1.5,2,3 and 4). The Fe_(83)B_(10)C_3 Si_3 P_1 amorphous alloy possesses excellent soft magnetic properties with high B_s of 1.71 T and low H_c of 1.5 A/m.It shows that density increase of the alloys and weakened metalloid-sp/metal-d bonding caused by C addition contribute to the increment of B_s.It suggests that the newly developed high-performance amorphous alloys possess great potential in application.     

不同压强下制备镓-镁共掺杂氧化锌薄膜的性能研究

以镓-镁掺杂的氧化锌(ZnO)陶瓷靶作为溅射源,采用磁控溅射技术在玻璃基片上沉积镓-镁共掺杂ZnO(ZnO:Ga-Mg)薄膜样品.通过X射线衍射(XRD)和扫描电子显微镜(SEM)的测试表征,研究了压强对ZnO:Ga-Mg样品结构性质和薄膜内应力的影响.结果表明,所有薄膜样品均为六角纤锌矿晶体结构并具有(002)择优取向生长特性,压强对其结晶性能和内应力具有明显的影响.当压强为3.5 Pa时,ZnO:Ga-Mg薄膜样品具有最强的(002)衍射峰、最大的平均晶粒尺寸、最小的张应力和最好的晶体质量.     

Cu,O元素的性质与高温超导氧化物

从新的角度由Cu,O元素的电子构型,及电子构型决定的元素性质参数,分析了Cu,O在高Tc氧化物超导体中的成键特点,首次揭示了Cu,O在铜氧系列氧化物高温超导体中的作用本质起因,得出了:Cu,O元素的电子构型所决定的成键特点是铜氧系列氧化物高温超导体超导电性的根本内禀因素。取得了诠释含Cu高温氧化物超导体有别于其他含氧超导体Tc差异大的本质因素。     

铜氧化物高温超导体的晶体结构和物理性能研究

阐述了铜氧化物高温超导体的晶体结构 ,指出导电区、蓄电区的划分和电子相图是铜氧化物高温超导体重要的共性特征 .介绍了分块模型及其在研究晶体结合能、弹性模量中的应用 ,对铜氧化物高温超导体结构和性能之间的关系作了探讨 .最后对当前高温超导体研究的几个热点问题及其应用前景予以简介 .     

氧气等离子体处理对铟锡氧化物薄膜表面性质的影响（英文）

采用氧气等离子体处理对铟锡氧化物(ITO)薄膜进行表面改性,基于化学组分、接触角、表面能和极性度的测试表征,研究了氧气等离子体处理对ITO表面性质的影响以及表面性能随放置时间的变化.实验结果表明:氧气等离子体处理有效去除了ITO表面的污染物,改善了ITO表面的化学组分、提高了表面能、极性度和润湿性,从而优化了ITO的表面性能.但是随着处理后放置时间的增加,ITO薄膜的表面能减小、极性度降低、润湿性退化,从而相应的表面性能也变差.     

Effects of deposition parameters on the properties of VO_2 thin films

Up to now, much attention has been paid tovanadiumoxide (VOx) thinfil ms due to their exten-sive applications in the infrared microbolometers .Incontrast tothe conventional photon detectors ,the mi-crobolometer using VOxthinfil ms as sensitive materi-als can offer decreased systemcost ,i mproved reliabil-ity,low power-consumption and high sensitivity inthe spectral range of 8—14μm.Vanadiumoxides have various crystal structuresand valency states ,such as VO, V2O3, VO2, V2O5,whichleads tol…