准周期光子晶体的态密度

本文研究了准晶光子晶体的局域态密度和全态密度.结果表明,准晶光子晶体的局域态密度分布具有和准晶光子晶体完全相同的对称性,带隙内光子晶体中的态密度很小,不同的准晶光子晶体的局域态密度随介电材料的占空比的变化是不同的,这对构造准晶光子晶体是非常重要的.准晶光子晶体的全态密度所显示的带隙和透过率显示的带隙的一致性表明准晶光子晶体在某种程度上是各向同性的.     

十二重准晶中负折射的研究

周期性的光子晶体中存在电磁波的负折射现象.然而,这些研究主要集中在周期性结构中,对非周期结构的研究还没有相关的报道.研究从实验和理论两个方面证明了非周期性十二重准晶光子结构同样存在负折射,并且可以实现超透镜的远场成像.利用楔形结构来验证这些条件:在频率为11.82 GHz时,准周期光子晶体可以实现负折射,并且对应的有效折射率接近于-1.与周期性光子晶体相比准晶更接近于各向同性.     

一维光子晶体传输性能的分析

光子晶体具有不同介电常数的物质在空间周期性排列而成的人工微结构,是一种能承载电磁波传播的新型光学材料,具有光子带隙、抑制自发辐射、光子局域、偏振特性等性能.利用传输矩阵方法导出光波在一维光子晶体中传播的反射系数和透射系数,分析了不同参数对应的光子带隙,发现介质折射率对光子带隙有着明显的影响.     

含负折射率材料的光量子阱频率特性研究

基于平均折射率为零的光子晶体的能带理论和负折射率材料的频率响应特性设计了特定频段的光量子阱结构,并对频率响应特性随阱宽和阱内材料的变化规律进行了对比和分析.该量子阱不仅具有折射率为零的光予晶体的带隙优点,还具有局域模调控简单的特点.实验结果与理论结果相符合.     

一维非线性光子晶体全光开关

为得到响应时间较短的全光开关,在光子晶体的所有高折射率层掺入Kerr介质,基于Kerr非线性效应导致的禁带整体移动原理,设计了两种一维光子晶体全光开关结构。应用时域有限差分(FD-TD：Finite Difference-Time Domain)法,编制Matlab计算程序,对全光开关进行数值特性分析。讨论频率混合效应对全光开关的影响。观察光子局域效应增强光子晶体非线性的现象,验证光子局域效应与光子晶体完整周期结构的层数有关,层数太少光子局域效应不明显。     

GaN基二维八重准晶光子晶体制备与应用

针对半导体发光管（LED）器件普遍存在的出光效率低下的问题,首次采用聚焦离子束技术成功地在GaN基发光器件上制备了GaN二维八重准晶光子晶体（2D-8PQCs）结构。并将二维八重准晶光子晶体应用于电注入器件,当刻蚀孔径为600nm,空气填充因子为30％时,得到了表面出光效率高达2.5倍的增强。通过微区电致发光与发光图样的研究,证实二维八重准晶光子晶体结构抑制了导波模式的传播,将LED中导波模式耦合到辐射模式,从而起到改进表面出光的作用。上述结果为二维准晶光子晶体在GaN基发光器件中的应用提供了一种可能的途径。     

散射体大小对光子局域化参量的影响

根据Mie散射理论和低浓度近似,对氧化物构成的反蛋白石光子晶体中的光子局域化进行研究.结果表明,在中红外区存在多个光子局域化区,随着入射波长的增大,理想局域化区的局域化参量减小,并且局域化区向着散射体尺寸增大的方向移动,这为实验上在该类晶体中实现局域化现象提供理论参考.     

电介质和磁介质光子晶体光学特性分析

从电磁场麦克斯韦方程组出发,将光子晶体的电磁场分析问题归结为求解电磁本征函数问题,明确求解光子晶体遵循的物理原理和数学方法.针对由电介质构成的光子晶体,分析该光子晶体周期结构下TE和TM入射光波的带隙特性和缺陷结构下的能量集聚特性,计算结果表明,光子晶体的频带特性与其几何结构紧密相关,通过改变光子晶体尺寸,可使其获得良好的带隙特性.针对磁介质构成的光子晶体,分析磁性光子晶体的频率特性,计算结果表明,磁性光子晶体具有和电介质光子晶体相似的光学性质,也具有频率禁带特性,其与入射波性质、光子晶体几何尺寸、磁介质参数紧密相关.     

不同对称性条件下光子晶体局域态的演化

光子晶体不仅可以用来调控自发辐射,还可以用来控制光的传输和局域.研究采用平面波展开法进行模拟计算.首先改变光子晶体H1缺陷及其附近介质柱的半径,使得光子晶格缺陷处超晶胞的旋转对称性具有C6v,C3v或C2v等点群的性质;然后分析二维圆形介质柱三角光子晶体的局域态在光子禁带中演化.计算结果表明：随着介质柱的半径的变化,光子晶体局域态会发生变化,其演化表现出阶段性;同时随着对称性破缺程度的加深,会有更多缺陷态进入光子禁带.计算选择硅（Si）作为介质柱材料,主要为硅基光子晶体激光器的选模提供理论参考.     

一维光子晶体表面模的特性

【目的】研究一维光子晶体表面模的特性,探究使用衰减全反射(ATR)技术激发光子晶体表面模的可行性。【方法】采用超元胞法和迭代菲涅尔方程计算一维光子晶体表面模的色散曲线及其ATR反射谱(利用棱镜装置)。【结果】当一维光子晶体最外层是高折射率层时,改变其厚度可以灵活控制表面模,相同带隙内不同位置的表面模其电场局域性不同;能带图中同一带隙内远离真空光线且居于带隙中部的表面模其电场局域性更强。【结论】利用棱镜装置能激发一维光子晶体的表面波;通过反射谱的形状和极小值点的位置可以判断透射介质的光学性质。     

利用光子晶体的禁带特性实现无源电磁屏蔽

为了实现一维二元光子晶体的全方位禁带,利用传输矩阵法,对于不发生Brewester效应的一维光子晶体的禁带结构特点进行了研究,获得了TE波和TM波的反射率随频率和入射角的变化关系图,分析了TE波和TM波光子禁带特征.根据全方位禁带特性,提出了一种新的光子晶体的无源电磁屏蔽设计,并指出了在给定屏蔽频段范围内,两种介质光学厚度的选取范围.数值计算表明了只要TM波满足屏蔽条件就能实现电磁屏蔽.     

Low frequency dispersion law for two-dimensional metallic photonic crystals

Using the rigorous multiple-scattering theory, we study the dispersion relation of electromagnetic （EM） waves in two dimensional dielectric photonic crystals （PCs） and metallic photonic crystals （MPCs） in the low-frequency limit. Analytic formula for the effective velocity of EM waves in PCs and MPCs is obtained. Accuracy of our formula is checked by comparing the results with rigorous calculations. For PCs, our result is exactly the same as the coherent potential approximation （CPA）, which is accurate even when the filling fraction is high. But for MPCs, our approach demonstrates special advantages, while the CPA theory fails, in predicting the effective velocity of EM waves in MPCs at low frequency.     

一维正负折射率光子晶体结构禁带及传播特性

采用传递矩阵的方法研究了由正折射率材料和负折射率材料交替排列组成的一维光子晶体结构的透射谱,并对其能带结构和色散关系进行分析,这种正负折射率光子晶体不仅存在一般的布拉格禁带,还存在低频共振禁带.本文也对含左手材料的一维无序结构的局域化进行了分析研究.     

Smart Processing in Materials Tectonics: Fabrication of Photonic Crystals for Terahertz Wave Control by Using Micro-Stereolithography

Photonic crystals with three-dimensional dielectric structures were fabricated to control terahertz waves effectively by using micro-stereolithography of a CAD/CAM process. The photonic crystals with a diamond structure composed of acrylic lattice with nanosized alumina particles were fabricated. Dense alumina structures were obtained by successive dewaxing and sintering in an air atmosphere. The electromagnetic wave properties of these samples were measured by using a terahertz spectroscopy device. The micro periodic structures exhibited perfect band gaps in the terahertz range. To control terahertz waves, micrometer sized electromagnetic devices for cavities, filters, and antennas will be necessary.     

光子晶体及其应用研究

对光子晶体的性质和应用,如光局域化或光子晶体波导,甚至于是沿着一个很尖锐的弯曲的光子晶体波导能力,以及光子晶体激光器,进行了讨论.在这一技术领域,有许多基础方面的特点被认为是正确的,但却没有给出严格的证明.这是由于下列两方面的原因,第一是这个新领域发展的非常迅速,第二是由于在光子晶体中分析电磁波是很困难的,除了使用计算机去得到定量结果外,没有别的选择.板型的光子晶体(带有一个周期性空洞系统的高折射率板片),对高集成的光电路器件来说,也许是最佳结构.     

Smart Processing in Materials Tectonics:Fabrication of Photonic Crystals for Terahertz Wave Control by Using Micro-Stereolithography

Photonic crystals with three-dimensional dielectric structures were fabricated to control terahertz waves effectively by using micro-stereolithography of a CAD/CAM process. The photonic crystals with a diamond structure composed of acrylic lattice with nanosized alumina particles were fabricated. Dense alumina structures were obtained by successive dewaxing and sintering in an air atmosphere. The electromagnetic wave properties of these samples were measured by using a terahertz spectroscopy device. The micro periodic structures exhibited perfect band gaps in the terahertz range. To control terahertz waves, micrometer sized electromagnetic devices for cavities, filters, and antennas will be necessary.     

Complete photonic bandgaps in 12-fold symmetric quasicrystals

Photonic crystals are attracting current interest for a variety of reasons, such as their ability to inhibit the spontaneous emission of light. This and related properties arise from the formation of photonic bandgaps, whereby multiple scattering of photons by lattices of periodically varying refractive indices acts to prevent the propagation of electromagnetic waves having certain wavelengths. One route to forming photonic crystals is to etch two-dimensional periodic lattices of vertical air holes into dielectric slab waveguides. Such structures can show complete photonic bandgaps, but only for large-diameter air holes in materials of high refractive index (such as gallium arsenide, n = 3.69), which unfortunately leads to significantly reduced optical transmission when combined with optical fibres of low refractive index. It has been suggested that quasicrystalline (rather than periodic) lattices can also possess photonic bandgaps. Here we demonstrate this concept experimentally and show that it enables complete photonic bandgaps--non-directional and for any polarization--to be realized with small air holes in silicon nitride (n = 2.02), and even glass (n = 1.45). These properties make photonic quasicrystals promising for application in a range of optical devices.     

Dodecagonal tiling in mesoporous silica

Recent advances in the fabrication of quasicrystals in soft matter systems have increased the length scales for quasicrystals into the mesoscale range (20 to 500 ?ngstr?ms). Thus far, dendritic liquid crystals, ABC-star polymers, colloids and inorganic nanoparticles have been reported to yield quasicrystals. These quasicrystals offer larger length scales than intermetallic quasicrystals (a few ?ngstr?ms), thus potentially leading to optical applications through the realization of a complete photonic bandgap induced via multiple scattering of light waves in virtually all directions. However, the materials remain far from structurally ideal, in contrast to their intermetallic counterparts, and fine control over the structure through a self-organization process has yet to be attained. Here we use the well-established self-assembly of surfactant micelles to produce a new class of mesoporous silicas, which exhibit 12-fold (dodecagonal) symmetry in both electron diffraction and morphology. Each particle reveals, in the 12-fold cross-section, an analogue of dodecagonal quasicrystals in the centre surrounded by 12 fans of crystalline domains in the peripheral part. The quasicrystallinity has been verified by selected-area electron diffraction and quantitative phason strain analyses on transmission electron microscope images obtained from the central region. We argue that the structure forms through a non-equilibrium growth process, wherein the competition between different micellar configurations has a central role in tuning the structure. A simple theoretical model successfully reproduces the observed features and thus establishes a link between the formation process and the resulting structure.     

Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres

Photonic technology, using light instead of electrons as the information carrier, is increasingly replacing electronics in communication and information management systems. Microscopic light manipulation, for this purpose, is achievable through photonic bandgap materials, a special class of photonic crystals in which three-dimensional, periodic dielectric constant variations controllably prohibit electromagnetic propagation throughout a specified frequency band. This can result in the localization of photons, thus providing a mechanism for controlling and inhibiting spontaneous light emission that can be exploited for photonic device fabrication. In fact, carefully engineered line defects could act as waveguides connecting photonic devices in all-optical microchips, and infiltration of the photonic material with suitable liquid crystals might produce photonic bandgap structures (and hence light-flow patterns) fully tunable by an externally applied voltage. However, the realization of this technology requires a strategy for the efficient synthesis of high-quality, large-scale photonic crystals with photonic bandgaps at micrometre and sub-micrometre wavelengths, and with rationally designed line and point defects for optical circuitry. Here we describe single crystals of silicon inverse opal with a complete three-dimensional photonic bandgap centred on 1.46 microm, produced by growing silicon inside the voids of an opal template of dose-packed silica spheres that are connected by small 'necks' formed during sintering, followed by removal of the silica template. The synthesis method is simple and inexpensive, yielding photonic crystals of pure silicon that are easily integrated with existing silicon-based microelectronics.