院校新闻

北京大学研制出新型超导材料日前从北京大学物理学院获悉,以冯庆荣教授为首的研究组成功制备出了具有超高载流能力的干净极限二硼化镁薄膜样品,以及超高上临界场的碳掺杂二硼化镁薄膜。据介绍,作为"973"计划项目"超导材料科学及应用中的基础问题研究"的子课题,以冯庆荣为首的研究组在甘子钊院士支持下,与国内外科研小组合作,利用改进的     

硼化镁超导体的掺杂性质

基于双带模型引入非电子－声子相互作用，利用自治近似方法讨论了硼化镁超导体的超导转变温度与掺杂之间的关系．     

北京大学研制出新型超导材料

日前从北京大学物理学院获悉，以冯庆荣教授为首的研究组成功制备出了具有超高载流能力的干净极限二硼化镁薄膜样品，以及超高上临界场的碳掺杂二硼化镁薄膜。     

超导体二硼化镁电子结构和掺杂研究

利用基于密度泛函理论(DFT)的线性缀加平面波方法(LAPW)对多频带双能隙超导体二硼化镁进行电子结构研究,研究了二硼化镁的电子能带图、态密度(DOS)和电荷密度.对二硼化镁进行电子掺杂和空穴掺杂,分别用铝原子代替镁原子,碳原子代替硼原子,对其能带和电荷密度的改变进行探讨.     

超导理论与应用研究的最新进展

介绍了超导理论与应用研究近况，特别是2001年的最新进展。在高温超导体微观机理的重新认识方面，已有证据显示，在高温超导体中存在很强的电子－声子耦合作用；在新型超导材料探索方面，主要有二硼化镁（MgB2），有机聚合物（P3HT），碳60等。超导材料具有现实和潜在的良好应用前景，特别是在能源、电力、交通、微波通信、计算机、医学和各种检测器等领域。     

铁基对垂直作用于MgB2/Fe超导带材外场的影响

铁基二硼化镁（MgB2／Fe）超导线带材有望在20K-30K、低场下得到广泛应用．本文考虑到铁的磁导率与磁场关系的非线性，结合J-A磁滞回线方程，构建了MgB2／Fe超导带材内超导芯的磁场与外加磁场的关系的模型．通过数字计算，研究了铁基截面尺寸及不同铁基底对外场的影响，计算了影响大小与外加磁场大小的关系．这对于解释MgB2／Fe超导带材的临界电流与外场的关系、进一步分析其应用中的低频交流损耗都将具有一定意义．     

元素、合金与化合物超导体的Matthias规律分析

根据元素、合金和化合物，特别是高温氧化物超导材料的一些新的实验结果，重新分析了Ｍａｔｔｈｉａｓ经验规律．发现碱金属、碱土金属元素发生超导电性的峰值出现在平均价电子数为２，５和７处，Ａ－１５化合物、碳和氨化合物超导转变温度的峰值出现在５和７处．对于分析Ｃｈｅｖｒｅｌ硫化物和氧化物超导体的特性，合理的方法是计算其平均化合价，二者Ｔｃ的峰值在２附近，处于同一区．     

CVD金刚石薄膜的掺硼研究

主要介绍硼掺杂金刚石膜的生长．采用热灯丝CVD法在硅上制备金刚石薄膜，采用三氧化二硼制备硼掺杂金刚石膜．利用拉曼光谱分析硼掺杂金刚石膜的生长情况．结果表明：硼的掺杂质量分数随生长时间延长而增大；利用SEM观察硼掺杂金刚石膜的表面晶粒变小；利用银浆在掺杂金刚石膜表面制备电极，测试电流随温度升高而变大.     

硼和铝所形成化合物的“缺电子”性

硼和铝都是ⅢA族元素。它们的价电子数少于价轨道数，当它们形成共价化合物时，成键电子对数往往少于中心原子价电子层的轨道数，使硼和铝的许多化合物具有缺电子性。由于硼是非金属元素，铝是金属元素，另外硼原子半径比铝原子半径小得多，而且硼的前三个电离能总和（6764KJ·mol-1）比铝的前三个电离能总和（5114KJ·mol-1）大，硼主要形成共价型化合物，缺电子性成为硼的化学最重要的特征，而铝则不然。本文以硼和铝形成化合物的缺电子性为线索，将有关它们分散而重要的描述性化学事实，从组成、结构、性能和应用等方面有机地联系起来…     

gossamer超导体基态相图的研究

在t-t’-J-U模型下,应用Gutzwiller平均场近似的方法,研究了gossamer超导体基态情况下的相图。结果表明,大U极限下,在欠掺杂区域,反铁磁序和d波超导序在很大的掺杂浓度范围内都共存。随着次近邻跃迁的增大,超导序参数在欠掺杂区域受到抑制,在最佳掺杂和过掺杂区域得到加强,从而导致反铁磁序和d波超导序共存区域变大,d波超导序在较大的掺杂浓度范围内一直存在。这些都与数值计算结果的趋势一致。     

超导的纯电子机制

从电子晶格的相互作用，受晶格屏蔽的电子间的相互作用，以及电子自旋的磁力作用等纯电子机制阐明正常超导和高温超导共同的机理，说明MgB2的超导和陶瓷性超导的机理相同，都是由于自由电子少的原因，以此对BCS公式作以修正，并预言Li2O的临界温度高于MgB2。     

无定形C掺杂对MgB2微结构和超导电性的影响

采用原位法粉末装管工艺制备了MgB2-xCx/Nb/Cu单芯线材.通过X射线衍射(XRD)、扫描电镜(EMS)和物性测试仪(PPMS)等手段研究了无定形C掺杂对线材微观结构及超导电性的影响.结果显示,随着C掺杂量的增加,进入MgB2晶格的C含量增加,MgB2层间结构不变.样品性能达到实用化超导磁体要求,在温度30 K外场0.2 T条件下,C掺杂量x=0,0.05,0.10,0.15的样品临界电流密度分别达8.1×104,1.7×105,1.6×105和1.0×105A/cm2.实验表明最佳C掺杂量x在0.05与0.10之间.     

原子及轨道电亲性：新能量标度及其相关分析

应用原子的平均电离能来近似度量电亲性或电负性。所提出的电亲性新标度XLL与总电离能U除以原子价壳层电子数目N即平均电离能B成正比，进一步地从原子总电离能T或平均电离能B可确定其价与杂化轨道电亲性。它们虽支接从基态自由原子计算得到，却与从热化学数据得到的鲍林电负性颇为一致，因而计算上避免了其经验性，也可方便地计算惰性元素的电亲性，应用上同样具有广适性，并已显示出其优越性和独到处。     

Doping effects of ZrC and ZrB2 in the powder-in-tube processed MgB2 tapes

We have investigated the effects of ZrC and ZrB2 doping on the superconducting properties of the powder-in-tube processed MgB2/Fe tapes. Sam- ples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM/EDX), transport and magnetic measurements. We confirmed the fol- lowing quite different roles of ZrC and ZrB2 in MgB2. ZrC doping was found to decrease the transport critical current density (Jc) at 4.2 K, while the critical temperature (Tc) kept constant. In contrast, the Jc values in magnetic fields were enhanced greatly by the ZrB2 addition, which resulted in a decrease in Tc by only 0.5 K. The reason for different effects of two dopants is also discussed.     

Enhancement of the high-magnetic-field critical current density of superconducting MgB2 by proton irradiation

Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially attractive for technological applications in the temperature range 20-30 K. But in the bulk material, the critical current density (Jc) drops rapidly with increasing magnetic field strength. The magnitude and field dependence of the critical current are related to the presence of structural defects that can 'pin' the quantized magnetic vortices that permeate the material, and a lack of natural defects in MgB2 may be responsible for the rapid decline of Jc with increasing field strength. Here we show that modest levels of atomic disorder induced by proton irradiation enhance the pinning of vortices, thereby significantly increasing Jc at high field strengths. We anticipate that either chemical doping or mechanical processing should generate similar levels of disorder, and so achieve performance that is technologically attractive in an economically viable way.     

The origin of multiple superconducting gaps in MgB2

Magnesium diboride, MgB2, has the highest transition temperature (T(c) = 39 K) of the known metallic superconductors. Whether the anomalously high T(c) can be described within the conventional BCS (Bardeen-Cooper-Schrieffer) framework has been debated. The key to understanding superconductivity lies with the 'superconducting energy gap' associated with the formation of the superconducting pairs. Recently, the existence of two kinds of superconducting gaps in MgB2 has been suggested by several experiments; this is in contrast to both conventional and high-T(c) superconductors. A clear demonstration of two gaps has not yet been made because the previous experiments lacked the ability to resolve the momentum of the superconducting electrons. Here we report direct experimental evidence for the two-band superconductivity in MgB2, by separately observing the superconducting gaps of the sigma and pi bands (as well as a surface band). The gaps have distinctly different sizes, which unambiguously establishes MgB2 as a two-gap superconductor.     

A-H键振动频率

本文用价层轨道平均能和价电子的平均核势来研究A－H键振动的规律性,得出了一个关系式,用此公式计算振动频率的值与实验值非常接近。     

Effect of Nano－SiC and Nano－Si Doping on Critical Current Density of MgB2

The discovery of superconductivity in magnesium diboride (MgB2) has opened up a new field in materials science research. It offers a possibility of a new class of high performance superconducting materials for practical applications because of the relatively low cost of fabrication, high critical current densities (Jc)and fields, large coherence length, absence of Weak links, higher Tc (Tc = 39 K) compared with Nb3Sn and Nb-Ti alloys (two or four times that of Nb3Sn and Nb-Ti alloys). However, the weak flux pinning in the magnetic field remains a major challenge. This paper reports the most interesting results on nenomaterial (SiC and Si) doping in magnesium diboride. The high density of nano-scele defects introduced by doping is responsible for the enhanced pinning. The fabrication method, critical current density, microstructures, flux pinning and cost for magnesium diboride bulks, wires and tapes are also discussed. It is believed that high performance SiC doped MgB2 will have a great potential for many practical applications at 5K to 25K up to 5T.     

自旋梯状化合物Sr14(Cu1-xZnx)24O41的电输运及磁学性质

采用标准固相反应法制备了Sr14(Cu1-xZnx)24O41(x=0, 0. 01, 0. 02, 0. 03)系列多晶样品. X射线衍射谱表明所有样品均呈单相,且样品晶格常数大小随Zn掺杂量x的变化存在微弱波动. X射线光电子能谱表明Sr14Cu24O41中Cu离子以+2价形式存在,Zn掺杂对体系中Cu离子化合价不造成影响. 磁化率测量结果表明在10~300 K温度范围内Zn掺杂使体系磁化率降低,拟合结果表明随着Zn掺杂量x的增大,居里-外斯项对体系磁化率贡献逐渐减弱,二聚体耦合能JD 逐渐降低,每个分子中CuO2 自旋链内二聚体个数ND 与自由Cu2+离子自旋数NF 均逐渐减少,进一步分析显示替换二聚体内Cu2+离子的Zn2+离子数少于替换自由Cu2+离子的Zn2+离子数. 电阻率测量结果表明Sr14Cu24O41体系具有半导体特性,并且Zn掺杂会使体系电阻率降低,降低程度随掺杂量x增大而增大,但并未使体系发生金属- 绝缘体转变. 认为电阻率降低可能是由于Zn2+离子掺杂使体系内CuO2 自旋链中二聚体发生退耦,破坏了电荷有序超结构,从而使更多的空穴释放出来并转移到导电性好的Cu2O3自旋梯子中所致.