Photonic integrated technology for multi-wavelength laser emission

We summarized the design, fabrication challenges and important technologies for multi-wavelength laser transmitting photonic integration. Technologies discussed include multi-wavelength laser arrays, monolithic integration and modularizing coupling and packaging. Fabrication technique requirements have significantly declined with the rise of reconstruction-equivalent-chirp and second nanoimprint mask technologies. The monolithic integration problem between active and passive waveguides can be overcome with Butt-joint and InP array waveguide grating technologies. The dynamic characteristics of multi-factors will be simultaneously measured with multi-port analyzing modules. The performance of photonic integration chips is significantly improved with the autoecious factors compensation packaging technique.     

Serial time-encoded amplified microscopy for ultrafast imaging based on multi-wavelength laser

In this paper, a serial time-encoded amplified microscopy （STEAM） by employing a multiwavelength laser as the light source is proposed and experimentally demonstrated. This system achieves ultrafast optical imaging with a tunable frame rate. The measuring range depends on the spectrum width of the multiwavelength laser. Through tuning the speed of the modulating signal, the frame rate ranges from 100 to 250 MHz. In addition, the spatial resolution can be improved by increasing the group velocity dispersion and reducing the wavelength spacing. Finally, with the development of photonic integrate circuits （PIC）, the multiwavelength laser source has the potential for integration on a photonic chip and thus the size of the proposed STEAM could be reduced in the future.     

Compact packaging for multi-wavelength DML TOSA

A compact multi-wavelength hybrid-integrated directly-modulated distributed-feedback laser （DML） transmitter optical sub-assembly （TOSA） has been achieved in our laboratory. The 8-channel distributed feedback （DFB） lasers are monolithically integrated based on the reconstruction-equivalent-chirp （REC） technology. With the high-density and high-speed packaging technique, the laser array and a multi-mode interference （MMI） multiplexer are assembled in the TOSA. The channel spacing of the TOSA is 200 GHz between adjacent lasers. It meets the 8 ; 12.5 Gb/s operation demand and gives rather low channel crosstalk of less than -25 dB. This compact TOSA is of effective cost and shows good sta- bility for mass production, which is expected to improve the performance of devices in access networks, data centers and supercomputing.     

用于光纤传感网的窄线宽多波长光纤光源研究

窄线宽多波长光纤光源是光纤传感系统中的重要光源,可同时为多路复用技术中的传感器阵列提供所需的多个工作波长．为此对多波长光纤光源的稳态输出进行了数值模拟,理论分析了未泵浦掺铒光纤长度对输出线宽的窄化作用．同时实验构建了一种带有单程反馈和线宽窄化机制的多波长光纤光源,测量分析了这2种机制以及激光腔输出耦合比对多波长输出结果的影响．实验实现功率谱不平坦度〈土3dB时,多波长个数可达27个,3dB线宽约0．06nm,波长在50GHz范围内整体连续可调．     

2μm状态可切换光纤激光器实验研究

报道了一种2μm状态可切换的光纤激光器,该激光器结合萨格纳克环(Sagnac loop)和非线性放大环镜,通过调节泵浦功率和偏振控制器,能够稳定工作在2个不同区域,即多波长工作区(Ⅰ区)和多波长与锁模态可切换工作区(Ⅱ区).Ⅰ区:激光器运行的中心波长为2017.4 nm,获得了19个稳定的波长,且相邻波长间隔为1.03 nm;Ⅱ区:激光器实现了多波长与锁模态之间的灵活切换,多波长态类似于Ⅰ区;其锁模态的脉冲宽度、光谱宽度和信噪比分别为1.62 ns,15.23 nm和34 dB.研究结果对2μm状态可切换光纤激光器输出动力学特性研究具有一定的指导意义.     

光纤通信技术发展动向评析

概述信息业务种类和数量需求的增长趋势，说明通信扩大建设对光纤技术发展的原则性要求，包括延长传输距离，加大传输容量，发掘利用已设光纤的潜力和设计今后应用的新型光纤，光子器件和集成的加快研究开发，以及新技术必须提高可靠性和降低成本等要求。介绍光纤通信新技术近年研究，实验和应用的进展趋向，包括光纤放大器，密集波分多路，非零色散光纤和高性能光子器件与集成等新技术的进展。     

波分多址通信网技术的发展前景

概述了从点－点线路至结点联成通信网和从多路技术至多址技术的发展过程，解释了光纤通信网发掘利用潜在容量以及建立未来高速通信网的关键问题．说明了波分多路／波分多址光纤通信使用的可调谐滤波器、可调谐激光管和光子集成的激光管阵列．着重解释光纤本身的色散与非线性特性对波分多路／波分多址系统运用的影响     

单向拓扑密集波分复用光分组交换网络结构及性能分析

提出了在单向网络拓扑下应用密集波分复用技术构造的多波长分组交换网络及其节点结构模型，在此基础上，应用简化的带缓存固定路由算法模拟了网络在稳态下的分组丢失率和归一化节点吞吐量等性能参数．模拟结果表明，密集波分复用(DWDM)技术的应用能使分组交换网络缓存数量急剧减少，整体性能大幅度提高．     

The research and progress of micro-fabrication technologies of two-dimensional photonic crystal

The novel material of photonic crystal makes it possible to control a photon, and the photonic integration will have breakthrough progress due to the application of photonic crystal. It is based on the photonic crystal device that the photonic crystal integration could be realized. Therefore, we should first investigate photonic crystal devices based on the active and the passive semiconductor materials, which may have great potential application in photonic integration. The most practical and important method to fabricate two-dimensional photonic crystal is the micro-manufacture method. In this paper, we summarize and evaluate the fabrication methods of two-dimensional photonic crystal in near-infrared region, including electron beam lithography, selection of mask, dry etching, and some works of ours. This will be beneficial to the study of the photonic crystal in China.     

掺铒光纤激光器中的模式损耗测量与模式竞争

模式竞争效应是实现激光器稳定输出的理论基础。由于各纵模的损耗不同,导致起振阈值不同。在测量掺铒光纤Bragg光栅FP腔激光器振荡模式损耗的基础上,对掺铒光纤Bragg光栅FP腔激光器的模式竞争效应进行理论与实验研究。采用衰荡光谱技术测量掺铒光纤Bragg光栅FP腔激光器振荡模式的损耗,确定各振荡模式的阈值条件,讨论激光器中的模式竞争。研究结果表明各振荡纵模损耗直接影响模式竞争结果。所得结果为单波长、双波长及多波长光纤激光器制作提供理论依据。     

单片集成正装结构的GaAlAs/GaAs激光器的热阻特性

本文利用二维热流模型,计算了适于单片集成正装结构GaAlAs/GaAs激光器的热阻,讨论了各种参数对热阻的影响。此外,还采用正向压降法测量了不同腔长激光器的热阻,并与理论曲线进行了比较。     

微波光子雷达及关键技术

 雷达是人类进行全天候目标探测与识别的主要手段,多功能、高精度、实时探测一直是雷达研究者追求的目标。这些特性实现的基础都是对宽带微波信号的高速操控,但受限于"电子瓶颈",宽带信号的产生、控制和处理在传统电子学中极为复杂甚至无法完成。光子技术与生俱来的大带宽、低传输损耗、抗电磁干扰等特性,使其成为突破雷达带宽瓶颈和"照亮雷达未来"的关键使能技术。同时光子系统重量轻、体积小、可集成,可以将雷达系统的体积重量降低数十倍,从而大大减轻飞机、卫星、舰艇等的载荷。因此光子技术的引入有可能改变现有雷达系统的体制,赋予雷达系统更加蓬勃的生命力。本文总结了国内外光子雷达系统的主要研究进展,讨论了光子雷达系统中的关键技术,并展望了光子雷达及其关键技术的发展趋势。     

基于单片机的激光图案投射仪中的接口电路

利用单片机对电机进行可逆调速，实现对激光束的调制，可获得一系列合成的激光图案．介绍了基于８０３１单片机的激光图案投射仪的整机结构、工作原理及供电电路，着重阐述了其接口的原理及电路实现，并给出了实现两路模拟信号同步输出的程序     

微流控技术及其应用与发展

微流控技术广泛应用于生化分析、疾病诊断、微创外科手术、环境检测等领域。微通道结构的设计与制造、微纳尺度流体的驱动与控制、微流控器件及系统的集成与封装是该领域的3大关键技术。本文综述了微流控技术在这3个方面的发展现状及在不同领域中的应用,展望了微流控技术的发展前景,指出多相微流体的介观传输理论及跨尺度流体的性质将是今后研究的重点与热点。     

聚合物微透镜阵列制作及单片集成应用研究

以聚酰亚胺和聚二甲基硅氧烷两类材料为例,研究了聚合物微透镜阵列的制备工艺以及与CCD图像传感器芯片的单片集成工艺,阐述了光学聚合物用于单片集成应具有的材料性能,对热熔产生的光刻胶微透镜阵列进行反应离子刻蚀得到了这两种聚合物材料微透镜阵列。     

A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor

Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III-V semiconductor compounds and/or electro-optic materials such as lithium niobate. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only approximately 20 MHz (refs 10, 11), although it has been predicted theoretically that a approximately 1-GHz modulation frequency might be achievable in some device structures. Here we describe an approach based on a metal-oxide-semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.     

Terahertz semiconductor-heterostructure laser

Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications--for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm(-2) up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.     

光子微波信号的亚谐波产生技术

光子微波信号的频率变换技术在光子微波技术中具有重要意义。然而由于光子器件的相对不成熟以及光子自身的物理特性,光子微波信号在亚谐波产生方面还面临许多困难。本文对外光注入激光器的倍周期、全光反馈、光电混合反馈以及光纤锁模腔结构的光子微波信号亚谐波产生的典型方法和原理进行介绍,并对这些方案进行总结评述,探讨光子微波信号亚谐波产生的发展方向。     

基于光子射频波高次倍频的深度融合通信研究

文中提出了基于光子射频高次倍频的微波与光纤深度融合的通信系统架构,从理论上论证了在已调制光信号中只存在奇数光谱边带所携带的调制信息,而偶数光谱边带不包含调制信息,并且在输出光谱边带中不存在二阶光谱边带. 在已调光信号传输到基站后,用中心光谱边带作为下行数据信号传输链路的激光光源,用分离出的低的第四阶光谱边带作为上行基带传输链路的激光光源,用高的和低的第三阶光谱边带拍频产生光子射频波. 通过专业仿真套件对25 km标准单模光纤传输的信号进行了模拟测试,分别得到下行光纤链路信号和上行光纤链路信号的清晰眼图和良好的误码率. 在该系统网络架构中,基站侧没有激光光源,其复杂度降低;利用光子射频波高次倍频直接产生毫米波,极大简化了射频处理单元.     

铒镱共掺光波导放大器增益特性模拟和性能优化

在分析铒镱共掺系统的能级结构和相关跃迁的基础上,根据速率方程和传输方程,建立了EY-CDWA的增益模型,给出了EY-CDWA的增益公式,对增益特性进行了模拟,并对影响放大器增益的波导长度及泵浦功率等相关条件进行了优化.模拟计算中建立了参数优化方案,实现了放大器泵浦波长、泵浦功率和增益的同步优化,得到最佳长度下的最大增益,该理论模型应用于实际制作的Yb-Er共掺Al2O3光波导放大器.结果与实验数据相符.