CVD金刚石薄膜的织构与显微组织研究

对直流电弧等离子喷射化学气相沉积法(CVD)制备的自支撑金刚石薄膜,用X射线衍射测量了薄膜织构,并用扫描电镜观察了薄膜显微组织。发现金刚石薄膜的织构为{110}、{111}、{112}和{221}等纤维织构。实验结果表明,金刚石薄膜比较致密并且晶形比较完整,不同生长因子对应不同立方体-八面体几何形状。分析和讨论了金刚石薄膜的制备工艺参数如衬底温度和甲烷浓度对其织构和显微组织产生的影响。     

CVD金刚石膜中的缺陷

研究了利用直流电弧等离子体喷射(DC Arc Plasma Jet)制备的大面积金刚石膜中的缺陷问题.研究表明:金刚石膜中的缺陷包括表面缺陷、晶内缺陷和晶界缺陷,以及由于内应力产生的金刚石膜宏观和微观裂纹.金刚石膜中的缺陷与制备工艺参数有着密切关系.     

金刚石膜抛光表面缺陷对其红外透射率的影响

通过等离子体喷射CVD(chemical vapor deposition)方法生长了光学级金刚石厚膜,运用电火花和机械抛光技术对厚膜进行了双面抛光,并研究抛光表面缺陷对厚膜红外透射率的影响.结果表明:表面的台阶、孔洞、裂纹和沟槽等缺陷均会引起入射红外光波的散射和吸收,从而导致金刚石厚膜透射率的下降.表面的台阶、孔洞、裂纹和沟槽等缺陷厚膜的平均红外透射率分别为46.53%,62.56%,50.11%,58.26%.     

快速沉积的金刚石薄膜生长特性

本文研究了用直流电弧等离子体喷射法快速沉积的金刚石薄膜的生长特性,并与用热解CVD法沉积的金刚石薄膜生长特性做了比较。     

Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD) are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 1011-1013 cm?2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method (TLM). Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10?5 Ω·cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.     

Deposition of crackless freestanding diamond films on Mo substrates with Zr interlayer

The Mo substrate with Zr interlayer, namely composite substrate, was employed to solve the problem of crack formation in the freestanding diamond film deposition. Freestanding diamond films deposited on the composite substrates by the direct current arc plasma jet chemical vapor deposition (CVD) method were investigated with scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Raman spectroscopy. In addition, the stress distribution during the large area freestanding diamond film deposition on the composite substrate was analyzed based on the finite element model ANSYS. The results reveal that Zr interlayer can be easily destroyed during the post-deposition cooling process, which is helpful for stress release and crack avoiding in diamond films.     

用金刚石膜的X射线衍射谱估算其热导率

讨论直流电弧等离子体喷射化学气相沉积的金刚石膜其热导率和晶面取向间的关系,并介绍了利用Ｘ射线衍射图谱估算以（１１１）取向为主的三向系金刚石膜热导率的方法     

终成正果贵在坚持——对CVD金刚石膜研究工作的回顾

100kW级直流等子体喷射化学气相沉积金刚石膜设备的研制成功,使我们成为继美国两家公司之后第三家能独立开发此种设备的单位,具有独创性和实用性。由于多年来的不断努力,我们不仅一直位于该项技术领域的前沿,而且也取得了很好的市场效果。金刚石膜制备工作因贵在坚持而终成正果。通过忆往昔,看今朝,思明日,对以往工作的简单回顾,来纪念院庆30周年。     

快速生长金刚石薄膜的装置及其工作性能

本文设计了用直流电弧等离子体喷射法快速生长金刚石薄膜的装置,并对其工作性能进行了研究。     

Infrared spectra study associated with hydrogen impurity in low pressure CVD diamond films

The infrared absorbance peaks at 2 852.4, 2 924.3, 2 963.0 and 3 034.9 cm-1 have been observed in diamond films made by the direct current arc discharge plasma chemical vapor deposition. Three former absorbance peaks have been assigned to C-H stretching in SP3 configuration, 3 034.9 cm-1 has been assigned to C-H stretching in SP2 configuration. The effect of methane concentration and H2 gas flow rate on absorption in the "C-H stretch" range has been investigated. Electron spin resonance analysis indicated that a considerable amount of defects exist in diamond films produced by low pressure chemical vapor deposition.     

强直电流伸展弧CVD硬质合金金刚石涂层工具

采用自行研制的强电流直流扩展电弧设备对酸浸和渗硼预处理的YG6刀片进行了金刚石薄膜涂层沉积，并对放于不同位置的沉积刀片表面涂层的激光Raman谱和SEM形貌进行了分析、研究。结果表明：渗硼预处理工艺优于酸浸预处理工艺；在渗硼处理的GY6刀片上，沉积的金刚石薄膜涂层具有大面积、均匀性好和质量高的特点。     

用于等离子体喷射金钢石膜设备的循环水冷却系统

本文论述了用于等离子体喷射金钢石膜设备的循环水冷却系统的特点和基本原理，给出了系统的有关参数和使用结果。     

金刚石薄膜在热敏打印头上的应用

首次报道了用微波等离子体化学气相沉积技术在ＴａＮ２电阻材料上沉积高质量金刚石薄膜的制备工艺，以及扫描电镜，Ｘ射线衍射，拉曼光谱，压痕测试的测试结果，从实验上表明了ＣＶＤ金刚石薄膜作用ＴａＮ２热打印头表面保护层的可能性。     

电弧放电法快速合成金刚石薄膜

本文用电弧放电等离子体ＣＶＤ快速生长金刚石薄膜。用拉曼散射，Ｘ射线衍射、电子显微镜等方法进行了结构表征。文中所论述的恒定的基板温度对沉积金刚石薄膜是非常重要的。     

合成金刚石薄膜生长工艺的研究

采用一种快速生长金刚石薄膜的直流等离子体弧焰合成法，进行生长金刚石薄膜的实验。讨论了生长金刚石薄膜时各种工艺条件对成膜形态的影响。ＳＥＭ照片与拉曼光谱分析表明，在工艺条件合适时，可快速生长金刚石薄膜。     

光学级透明金刚石膜的性

采用微波等离子体化学气相沉积(MWPCVD)方法在单晶硅片上制备光学级透明金刚石膜, 利用傅里叶红外分光光度计和紫外-可见分光光度计分别测试不同厚度金刚石膜的红外光和紫外-可见光波段的透过率, 并分析了测试结果.      

化学气相沉积金刚石膜的硬度

使用力驱动静态超微压痕测量仪器（Ｆｏｒｃｅ Ｄｒｉｖｅｎ Ｓｔａｔｉｃ Ｍｅａｓｕｒｉｎｇ Ｕｌｔｒａ Ｍｉｃｒｏ－ Ｉｎｄｅｎ－ｔａｔｉｏｎ Ｓｙｓｔｅｍ ）－ ＵＭＩＳ－ ２０００ 对由直流等离子体喷射法沉积的金刚石膜进行测量。结果显示金刚石膜的硬度不仅与晶体生长方向和晶粒大小有关,还与厚度有关。生长面和与基底接触面的金刚石膜硬度也有区别。后者被认为由于随机取向的微小晶粒占优势,其硬度比生长面略高。在所进行的测量中,硬度值在９０ＧＰａ左右。     

金刚石晶体生长研究进展

介绍利用高温高压（HPHT）合成高质量金刚石单晶和化学气相沉积法（CVD）制备金刚石薄膜的设备、方法、工艺参数以及热丝CVD和微波等离子体CVD的优缺点;P型和N型金刚石掺杂研制现状.重点介绍N型金刚石掺杂的困难,氮、锂、钠、磷、硫等杂质的掺杂效果,共掺杂对于金刚石薄膜的影响,以及近年来P型和N型掺杂取得的成果.     

大面积金刚石膜的均匀沉积

研究了大面积金刚石膜沉积过程中的均匀性问题和金刚石膜质量的均匀性问题,研究了表明：用于生长金刚石的大面积磁旋转等离子体电弧是均匀的,能使气体混合均匀;金刚石膜在形核阶段是均匀的;金刚石膜在生长阶段是均匀的,有利于提高成膜几率;沉积后的金刚石膜的质量是均匀的,大面积磁控长通道等离子矩能生长均匀的金刚石膜,可用于金刚石膜的研究和工业生产。     

晶圆级二维单晶材料生长的研究进展

低维材料因其原子级的物理尺寸而拥有独特的物理化学性质. 以石墨烯为代表的二维材料具有优越的光学、电学、力学及热学性能,在电子、光电、能源、催化等领域具有巨大的应用潜力. 大尺寸、高质量的单晶材料是大规模高端器件的应用基础. 为此,研究者们致力于实现晶圆级二维单晶材料的制造研究. 利用化学气相沉积法(CVD)制备二维材料具有薄膜质量高、可控性强、均匀性好等优点,因此,CVD成为制备高质量二维单晶材料的首选. 文章从二维导电石墨烯、绝缘氮化硼和半导体过渡金属硫族化合物入手,总结了近年来利用CVD技术外延制造二维单晶薄膜的研究进展,讨论了大面积二维单晶材料的制备策略与生长机理,指出了目前存在的问题,对未来高质量二维单晶薄膜的制备方法进行了展望. 该综述为进一步推动二维单晶材料的规模化应用提供借鉴.