Gate-induced superconductivity in a solution-processed organic polymer film

The electrical and optical properties of conjugated polymers have received considerable attention in the context of potentially low-cost replacements for conventional metals and inorganic semiconductors. Charge transport in these organic materials has been characterized in both the doped-metallic and the semiconducting state, but superconductivity has not hitherto been observed in these polymers. Here we report a distinct metal-insulator transition and metallic levels of conductivity in a polymer field-effect transistor. The active material is solution-cast regioregular poly(3-hexylthiophene), which forms relatively well ordered films owing to self-organization, and which yields a high charge carrier mobility (0.05-0.1 cm2 V(-1) s(-1)) at room temperature. At temperatures below approximately 2.35 K with sheet carrier densities exceeding 2.5 x 10(14) cm(-2), the polythiophene film becomes superconducting. The appearance of superconductivity seems to be closely related to the self-assembly properties of the polymer, as the introduction of additional disorder is found to suppress superconductivity. Our findings therefore demonstrate the feasibility of tuning the electrical properties of conjugated polymers over the largest range possible-from insulating to superconducting.     

Electric-field control of ferromagnetism

It is often assumed that it is not possible to alter the properties of magnetic materials once they have been prepared and put into use. For example, although magnetic materials are used in information technology to store trillions of bits (in the form of magnetization directions established by applying external magnetic fields), the properties of the magnetic medium itself remain unchanged on magnetization reversal. The ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magnetoelectronics and spintronics. In semiconductors, the conductivity can be varied by applying an electric field, but the electrical manipulation of magnetism has proved elusive. Here we demonstrate electric-field control of ferromagnetism in a thin-film semiconducting alloy, using an insulating-gate field-effect transistor structure. By applying electric fields, we are able to vary isothermally and reversibly the transition temperature of hole-induced ferromagnetism.     

反铁电爆电换能电源研究

为了建立铁电－反铁电相变中释放的电能量与外加作用力场的关系，采用电滞回线、等静压和热释电等方法测量了Pb(Zr,Ti)O3基反铁电材料在电场、温度、压力等外场诱导下的铁电－反铁电相变性能，分析了在电容和电阻负载条件下的电输出特性。实验结果表明：铁电－反铁电相变中的输出功率与材料面电荷量的平方成正比，与实现相变的时间成反比。在此基础上提出了增加输出功率的途径。通过改善材料电滞回线的方直比，可以提高材料面电荷密度和缩短相变时间。     

Tunnel field-effect transistors as energy-efficient electronic switches

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.     

时钟控制供电电路及其工作原理

设计一种由指针工电子石英钟计时，用晶体管正反馈互补双稳态电路作为控制器，并采用电瓶供电与自动浮充电相结合的钟控供电电路，提高了电路的抗干扰能力，使其工作不受电网停电的影响。使用该电路去控制电网的接通、断开，具有安全、方便、经济、准确的优点，且可随意设定。时控器的个数相视用户的实际需要而定。     

栅压对有机薄膜场效应晶体管中载流子注入的影响

采用有机半导体材料酞菁铜作为有源层,聚四氟乙烯作为绝缘层,制作了两个不同结构的有机薄膜场效应晶体管,一个是底电极结构,另一个是倒置顶电极结构。文章通过对两个器件的电特性进行对比,分析出在倒置顶电极结构下栅压对有机薄膜场效应晶体管中载流子的注入有很大的帮助。     

碱金属单质的奇异高压行为

碱金属元素单质(锂、钠、钾、铷和铯)的原子最外层只有一个近自由的s电子, 在常温和常压下碱金属单质具有简单的体心立方结构. 在压力的作用下, 碱金属原子间距减小, 电子轨道重叠程度增加, 导致电荷发生重新分布(如, s→p或s→d电荷的转移), 引起一系列复杂的结构相变发生(如长程无序非公度结构的形成). 伴随结构相变的发生, 碱金属单质的电子性质也发生了很大的变化, 比如锂和铯出现了超导电性, 更令人惊奇的是锂和钠在高压下还发生了有违传统高压理论的金属到绝缘体的转变. 文中总结了5种碱金属元素单质锂、钠、钾、铷和铯在高压下的丰富结构相变行为, 介绍了各种新型高压相结构, 分析了相变产生的物理机制, 阐述了锂和铯的高压超导电性, 并重点介绍了锂和钠的金属-绝缘体相变. 最后我们还展望了碱金属元素单质的未来高压研究的重点.     

过渡金属氧化物自旋和电荷相关信息存储

信息技术的快速发展在某种程度上要求有高速度和大容量的非易失存储器.然而,随着晶体管尺度达到其量子极限,传统硅半导体器件的继续集成化发展遇到了瓶颈.因此,人们提出了一系列有潜力成为下一代更具功能性的存储器原型器件,并引起了广泛而持续的研究热潮.本文介绍3种基于新材料和新结构的新型存储原型器件：阻变开关器件、有机自旋阀和多铁隧道结.我们发现通过改变界面态,可将阻变式开关器件的反应速度提高数个量级,达到5ns;在实验上确认了超精细相互作用对自旋阀效应的影响;利用多铁隧道结实现了室温下的四重阻态存储.基于自旋、电荷相关信息存储的原理和实验结果,我们对这3种过渡金属氧化物器件目前还存在的问题及未来的应用前景进行了分析和讨论.     

表面增强拉曼光谱的理论机制模型分析

从SERS效应发现以来,大量的理论和实验研究建立了各种理论模型,基于散射增强的原因,可能来自于作用在分子上的局域电场的增强或者分子极化率的改变,其理论机制模型中主要分为两大类:物理模型(电磁增强)和化学模型(非电磁增强)。物理模型将SERS的产生归因于局域电场的增强,主要反映了金属材料本身的光学性质和金属表面的纳米结构性质;而化学模型侧重于分子极化率的改变,认为由分子的基态到金属费米能级附近的空电子态可以发生共振跃迁,从而改变分子的极化率,产生SERS效应。化学模型主要与分子几何形状、电子结构、分子与基底的成键作用和表面环境密切相关。     

绝缘栅场效应管工作原理的统一表述

关于绝缘栅场效应管的工作原理,现行教材有几种不同的讲解,观点各不相同。结构示意图和特性曲线画法不同。但是,对同一类的场效应管而言,结构示意图和特性曲线只能有一种表述形式是正确的。从场效应管的基本结构出发,用新观点、新方法说明其基本工作原理,击穿的位置,击穿的原因。提出工作原理结构示意图的统一表述方法应当是在源衬、漏衬PN结之间是正负离子对应的耗尽层,在反型层与衬底之间是单一离子层（它不应该与耗尽层混同）。漏极特性曲线的统一表述规律是截止状态时的漏源击穿电压|BV‘DS|是各个不同VGS时,击穿电压的最大值。     

场效应纳电子晶体管的构造和电学特性测量

研究了场效应纳电子晶体管构造过程中金属电极的结构设计,源-漏电极高度、SiO₂绝缘层厚度以及金属电极选材等因素对器件性能有关键的影响。在此基础上测量了单壁碳纳米管束的场效应行为,构造成功基于单壁碳纳米管束的场效应晶体管。     

Eu-Ru共掺NiO-SnO2复合纳米粒子薄膜的阻变特性

通过低温水浴法制备了Eu-Ru共掺杂NiO-SnO2复合纳米粒子，透射电镜图像显示纳米粒子粒径均匀，选区电子衍射表明结晶性差，所测晶面间距与SnO2和NiO相应卡片数据一致，水热机理分析表明纳米粒子由NiO-SnO2微观p-n结组成.原子力显微镜测试薄膜表面平均粗糙度约025nm，由于薄膜太薄及样品结晶性差，XRD分析未见明显衍射峰.电学测试表明纳米粒子薄膜具有可重复双极阻变特性，阈值电压约1V，开关比约500.薄膜高阻态电学输运符合缺陷俘获载流子所致空间电荷限制导电机制，低阻态呈欧姆特性，故阻变机理应为电荷俘获及再释.     

电动轿车直流斩波器的研制

介绍了以双极型晶体管（ＢＪＴ）作主开关器件，用于电动轿车的直流斩波器。由于采用了先进的元件退饱和快速保护技术、低损耗吸收电路结构、最大限流起动控制以及过流、过压、欠压保护等措施，斩波器具有较小的体积、较高的运行效率、较快的启动性能以及高的可靠性。用在ＭＡＺＤＡ改装电动轿车上，试运行情况证明该斩波器性能优良。     

Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial

Electron-electron interactions can render an otherwise conducting material insulating, with the insulator-metal phase transition in correlated-electron materials being the canonical macroscopic manifestation of the competition between charge-carrier itinerancy and localization. The transition can arise from underlying microscopic interactions among the charge, lattice, orbital and spin degrees of freedom, the complexity of which leads to multiple phase-transition pathways. For example, in many transition metal oxides, the insulator-metal transition has been achieved with external stimuli, including temperature, light, electric field, mechanical strain or magnetic field. Vanadium dioxide is particularly intriguing because both the lattice and on-site Coulomb repulsion contribute to the insulator-to-metal transition at 340?K (ref. 8). Thus, although the precise microscopic origin of the phase transition remains elusive, vanadium dioxide serves as a testbed for correlated-electron phase-transition dynamics. Here we report the observation of an insulator-metal transition in vanadium dioxide induced by a terahertz electric field. This is achieved using metamaterial-enhanced picosecond, high-field terahertz pulses to reduce the Coulomb-induced potential barrier for carrier transport. A nonlinear metamaterial response is observed through the phase transition, demonstrating that high-field terahertz pulses provide alternative pathways to induce collective electronic and structural rearrangements. The metamaterial resonators play a dual role, providing sub-wavelength field enhancement that locally drives the nonlinear response, and global sensitivity to the local changes, thereby enabling macroscopic observation of the dynamics. This methodology provides a powerful platform to investigate low-energy dynamics in condensed matter and, further, demonstrates that integration of metamaterials with complex matter is a viable pathway to realize functional nonlinear electromagnetic composites.     

聚合物稳定液晶调光器件厚度对其电光性能的影响

通过采用紫外光聚合诱导相分离法制备聚合物稳定液晶调光器件,利用紫外可见分光光度计来研究器件的不同厚度对聚合物稳定液晶调光器件电光性能的影响. 结果表明:随着器件厚度的增加,器件的关态透光率降低,阈值电压升高,饱和电压升高;当器件厚度为5 m时,聚合物稳定液晶智能调光器件的电光性能优良,未通电时,透光率高达97%,当施加40V电压时,透光率低于10%;响应时间非常短,灵敏度非常高,从关态到开态响应时间仅仅需要0.025 s,从开态到关态响应时间需要0.06 s. 这些优异性能使得基于聚合物稳定液晶的智能窗在室内光线智能管理领域有着巨大的应用潜力.     

Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and progress of InAlN- related studies, this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University, which focuses on innovation of the material growth approach and device structure for electronic applications. A novel pulsed metal organic chemical vapor deposition （PMOCVD） was first adopted to epitaxy of InAlN-related heterostructures, and excellent crystalline and electrical properties were obtained. Furthermore, the first domestic InAlN-based high-electron mobility transistor （HEMT） was fabricated. Relying on the PMOCVD in combination with special GaN channel growth approach, high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time. Additionally, other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications. Finally, some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications, showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.     

Ballistic carbon nanotube field-effect transistors

A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube--metal junctions. These energy barriers severely limit transistor conductance in the 'ON' state, and reduce the current delivery capability--a key determinant of device performance. Here we show that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduces or eliminates the barriers for transport through the valence band of nanotubes. In situ modification of the electrode work function by hydrogen is carried out to shed light on the nature of the contacts. With Pd contacts, the 'ON' states of semiconducting nanotubes can behave like ohmically contacted ballistic metallic tubes, exhibiting room-temperature conductance near the ballistic transport limit of 4e(2)/h (refs 4-6), high current-carrying capability (approximately 25 micro A per tube), and Fabry-Perot interferences at low temperatures. Under high voltage operation, the current saturation appears to be set by backscattering of the charge carriers by optical phonons. High-performance ballistic nanotube field-effect transistors with zero or slightly negative Schottky barriers are thus realized.     

The giant electromechanical response in ferroelectric relaxors as a critical phenomenon

The direct conversion of electrical energy to mechanical work by a material is relevant to a number of applications. This is illustrated by ferroelectric 'relaxors' such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT; refs 5, 6): these materials exhibit a giant electromechanical (piezoelectric) response that is finding use in ultrasonic and medical applications, as well as in telecommunications. The origins of this effect are, however, still unclear. Here we show that the giant electromechanical response in PMN-PT (and potentially other ferroelectric relaxors) is the manifestation of critical points that define a line in the phase diagram of this system. Specifically, in the electric-field-temperature-composition phase diagram of PMN-PT (the composition being varied by changing the PT concentration), a first-order paraelectric-ferroelectric phase transition terminates in a line of critical points where the piezoelectric coefficient is maximum. Above this line, supercritical evolution is observed. On approaching the critical point, both the energy cost and the electric field necessary to induce ferroelectric polarization rotations decrease significantly, thus explaining the giant electromechanical response of these relaxors.     

控制界面态减少表面可动电荷降低晶体管的电噪声

通过对比2688B, 2688S, 2688 3种工艺技术生产的彩色 电视机高频视放晶体管的CB结反向漏电流I_cbo和电噪声谱密度S_vcb (f), 论述了界面态和表面可动电荷能够引起晶体管表面漏电流, 从而使器件产生电噪声, 并间接影响到反向击穿电压、 小电流放大系数等参数. 实验表明, 采用合适的表面钝化技术, 可有效控制晶体管的表面漏电流, 降低晶体管的电噪声, 使器件的可靠性、 稳定性及其使用寿命得到提高.     

氧化钽/氧化铝薄膜的阻变特性和突触特性

通过微电子加工工艺,制备出具有ITO/TaO_x/AlO_x/Ti结构的双介质层阻变存储器.器件中引入的氧化铝介质层有效地减小了器件的运行电流,降低了高/低阻态间切换所需的功耗,并增大了高/低阻态电阻比值.研究表明,器件的高低态电阻与其切换电压均有良好的稳定性和均匀性,且器件表现出可靠的擦写性能与保持性能.进一步研究表明,器件高阻态导电受肖特基发射机制主导,低阻态导电受空间电荷限制机制主导.器件还具有连续可调的电阻渐变行为,利用反复电脉冲刺激下的器件电阻变化来表征突触的权值,可以模拟突触行为.