Thermoelectric properties of quaternary Mg2Sn0.4Si0.6−xGex alloys

Quaternary alloys Mg₂Sn_0.4Si_0.6−xGe_x (x=0, 0.02, 0.05, 0.08 0.1, and 0.2) were prepared using induction melting followed by hot-pressing. Relative densities of the sintered samples were over 97% of the theoretical values. Multiple phases were detected in the samples. It was found that the Seebeck coefficient was sensitive to the content of Mg₂Ge and a maximum value of about 350 μ V.K⁻¹ was obtained. The introduction of Ge increases the electrical conductivity and the thermal conductivity simultaneously. The mechanism of this phenomenon was discussed. A maximum dimensionless figure of merit, ZT, of about 0.28 was obtained for Mg₂Sn_0.4Si_0.55Ge_0.05 at 550 K.     

Preparation of three-dimensionally ordered macroporous perovskite materials

In this paper,we use La0.8Sr0.2MnO3 and La0.7Ca0.2Sr0.1MnO3 as examples to demonstrate a preparation method for threedimensionally ordered macroporous(3DOM) perovskite thermochromic materials.Polystyrene spheres with an average diameter of 220 nm were self-assembled into a three-dimensionally ordered colloidal crystal template.A mixed metal nitrate solution prepared using La(NO3) 3·6H2O,Ca(NO3) 2·4H2O,Sr(NO3) 2,Mn(CH3COO) 2·4H2O and an ethanol precursor was used to fill the interstitial voids of the polystyrene colloidal crystal templates.3DOM La0.8Sr0.2MnO3 and La0.7Ca0.2Sr0.1MnO3 materials were then obtained after the sphere templates were removed via drying and calcination.The results show that the framework of the 3DOM materials can have different thicknesses and pore shrinkage rates by varying the filling times.In addition,the Curie temperatures of the 3DOM and bulk La0.8Sr0.2MnO3 materials can be varied by altering the preparation method.     

Towards understanding the influence of Mg content on phase transformations in the La3-xMgxNi9 alloys by in-situ neutron powder diffraction study

The present work is focused on the studies of the phase-structural transformations in the La_3-xMg_xNi₉ (x = 1.0, 1.1 and 1.2) alloys as active materials of negative electrodes in the Nickel-Metal Hydride(Ni/MH) batteries. The phase equilibria and phase-structural transformations in the alloys were probed by in situ neutron powder diffraction(NPD) at the temperatures ranging from 300 K to 1273 K using the measurements of the equilibrated alloys at 8 setpoint temper...     

中温SOFC阴极材料La0.7Sr0.3Co1-xCuxO3-δ的制备及性能

采用固相反应法制备了La_0.7Sr_0.3Co_1-xCu_xO_3-δ系列中温固体氧化物燃料电池（SOFC）阴极材料粉体.对其进行晶体结构表征,高温电导率和热膨胀曲线测试,并选取其中性能较好的样品进行了单电池实验.结果表明,Cu的掺杂降低了（La,Sr）CoO La₃体系阴极材料的热膨胀系数,在x=0.05时电导率略高于未掺Cu的样品.以La_0.7Sr_0.3Co_0.95Cu _0.05O _3-δ为阴极、Ce_0.8Sm_0.2O_1.9为电解质组成的SOFC单电池,在850℃最大短路电流密度达511mA/cm²,最大输出功率密度约为0.106W/cm².     

Direct determination of trace silicon in lanthanum oxide by using a selective volatility and slurry sampling-FETV-ICP-AES

A new method for determination of trace sillicon in high purity lanthanum oxide by using electrothermal vaporization (ETV)-ICP-AES with polytetrafluoroethylene (PTFE) slurry as a fluorinating reagent has been proposed. Under the optimized experimental conditions, the fluorination reactions of analyte (Si) and matrix(La) with PTFE in the graphite furnace took place at high temperature, and the fractional volatilily between Si and La was observed. Based on this principle the matrix interference could be eliminated. The detection limit of Si was 4.0μg·L⁻¹, and the RSD was 3.4%(C=0.2mg·L⁻¹,n=10). The procedure proposed has been applied successfully to determine trace Si in La₂O₃ without any chemical pre-treatment. Supported by the National Natural Science Foundation of China Qin Yongchao: born in Dec. 1953, ph. D., Assciate Professor     

La掺杂对SrTiO_3纳米颗粒光催化性能的影响

采用高温固相反应法,向SrTiO_3中掺杂不同含量La制备光催化剂,通过XRD、SEM、UV-Vis等手段对其结构和形貌进行表征,并以罗丹明B(RhB)为模拟污染物,研究掺杂不同含量La所制催化剂对RhB的光催化降解能力的影响,从而评价所制催化剂的光催化性能。结果表明,随着掺La含量的增加,所制催化剂的晶体结构从SrTiO_3的立方晶系逐步向La_2Ti_2O_3的单斜晶系转变;La掺杂使得所制催化剂的禁带宽度减小、对紫外光的吸收阈值增大,使其光催化性能得到显著提升;掺La含量越高,所制催化剂的光催化性能越好。     

Isothermal section of ternary Sn ? Zn?Ni phase equilibria at 250 °C

Ternary Sn ?Zn? Ni alloys were prepared and equilibrated at 250 °C for 4? 15 weeks. The phases formed in these equilibrated alloys were determined experimentally. The isothermal section of Sn ?Zn? Ni system was constructed, based on the phase diagrams of the three constituent binary sy stems and the ternary phase equilibria data, determined in this study and referenced in literatures. 12 single-phase regions were identified in the Sn? Zn?Ni ternary system at 250 °C, including the three ternary compounds, δ , τ1 and τ2. There were 13 ternary phase regions and 23 binary phase regions in the 250 °C Sn ? Zn? Ni isothermal section. The solubility of Zn in the binary Sn ?Ni compounds is significant, and is 15.1% (mole fraction) in the Ni3Sn phase.     

Effect of sintering temperature on the physical properties and electrical contact properties of doped AgSnO<Subscript>2</Subscript> contact materials

AgSnO₂ electrical contact materials doped with Bi₂O₃, La₂O₃, and TiO₂ were successfully fabricated by the powder metallurgy method under different initial sintering temperatures. The electrical conductivity, density, hardness, and contact resistance of the AgSnO₂/Bi₂O₃, AgSnO₂/La₂O₃, and AgSnO₂/TiO₂ contact materials were measured and analyzed. The arc-eroded surface morphologies of the doped AgSnO₂ contact materials were investigated by scanning electron microscopy (SEM). The effects of the initial sintering temperature on the physical properties and electrical contact properties of the doped AgSnO₂ contact materials were discussed. The results indicate that the physical properties can be improved and the contact resistance of the AgSnO₂ contact materials can be substantially reduced when the materials are sintered under their optimal initial sintering temperatures.     

Formation, structure and properties of GeCn± and Ge2Cn± binary clusters

The binary cluster ions Ge₂C_n⁺/Ge₂C_n^- and GeC_n⁺ have been produced by laser ablation. The parity effect is present in the negative ions Ge₂C_n^-, though it is not very prominent. While the experiments tell that the parity effect is totally not shown in the positive ions Ge₂C_n⁺. An extensive theoretical investigation on GeCn/GeC_n⁺/GeC_n^-(n=1-10) and Ge₂Cn/Ge₂C_n⁺/Ge₂C_n^-(n=1-9) has been carried out by density functional theory at B3LPY level. The calculation shows that the low-lying states of GeC_n/GeC_n⁺/GeC_n^-(n=1-10) and Ge₂C_n/Ge₂C_n⁺/Ge₂C_n^-(n=1-9) are linear structure with germanium atoms locating at terminals respectively. The electronic distributions, ionization potential (IP_ad), elec-tron affinity (EA) and increasing bonding energy reveal that the parity effect of neutral species is much stronger than that of ions, which is attributed to the valence π-electrons. It is explained that the differences between experiments and cal-culations are due to the kinetic factor in the formation of Ge₂C_n^±.     

Properties of garnet-type Li6La3ZrTaO12 solid electrolyte films fabricated by aerosol deposition method

The garnet-type Li_6La_3ZrTaO_(12)(LLZT) solid electrolyte films were fabricated by aerosol deposition(AD)method.Ball-milled LLZT powder with a cubic garnet structure and a particle size of 1-2 urn was used as raw material and deposited directly on a SUS316L or a glass substrate via impact consolidation.As-deposited LLZT film has a cubic garnet structure but contains Li_2CO_3 and La_2Zr_2O_7 phases.SEM observation revealed that the film consists of LLZT particles fractured into submicron size.The impurity phase formation during AD process was caused by the local heating by the collision between LLZT particles and deposition surface and reaction with CO_2.The Li~+ ion conductivity of LLZT film was estimated to be 0.24 × 10~(-5)S cm~(-1) at room temperature.Electronic conductivity of LLZT film was confirmed to be around 10~(-12) S cm~(-1),indicating the dominant Li~+ ion conduction of LLZT film.     

Dielectric,piezoelectric, and ferroelectric properties of lanthanum-modified PZTFN ceramics

Specimens of Pb_1?1.5xLa_x(Zr_0.53Ti_0.47)_1?y?zFe_yNb_zO₃(x = 0, 0.004, 0.008, 0.012, and 0.016, y = z = 0.01) (PZTFN) ceramics were synthesized by a semi-wet route. In the present study, the effect of La doping was investigated on the structural, microstructural, dielectric, piezoelectric, and ferroelectric properties of the ceramics. The results show that, the tetragonal (space group P4mm) and rhombohedral (space group R3c) phases are observed to coexist in the sample at x = 0.012. Microstructural investigations of all the samples reveal that La doping inhibits grain growth. Doping of La into PZTFN improves the dielectric, ferroelectric, and piezoelectric properties of the ceramics. The hysteresis loops of all specimens exhibit nonlinear behavior. The dielectric, piezoelectric and ferroelectric properties show a maximum response at x ≥ 0.012, which corresponds to the morphotropic phase boundary (MPB).     

Microstructure and wear behavior of Mo–60Si–5B coating doped with 0.5 ​at% La by spark plasma sintering

Mo–60Si–5B coating doped with 0.5 ?at% La was prepared on niobium silicon based alloy by spark plasma sintering. The microstructure and wear behavior of the 0.5La–Mo–60Si–5B (0.5La-MSB) coating were investigated. The results show that the mean grain sizes of the Mo–60Si–5B (0La-MSB) and 0.5La-MSB coatings are calculated to be 3.27 ?μm and 2.85 ?μm, respectively. The addition of La plays a role of refining the grains of 0.5La-MSB coating. The specific wear rate of 0.5La-MSB coating is decreased by up to 26.8% at the oscillation frequency of 20 ?Hz and the sliding load of 11 ?N compared to 0La-MSB coating. The anti-friction performance of Mo–60Si–5B coating is modified by the addition of 0.5 ?at.% La. The improvement of anti-friction performance of the Mo–60Si–5B coating is due to the increased hardness and the provided lubrication function by La₂O₃.     

HoNi2Ge2的X射线粉末衍射数据

给出尚未出现在ＪＣＰＤＳ－ＰＤＦ上的ＨｏＮｉ２Ｇｅ２相的Ｘ射线粉末衍射数据。该化合物属四方晶系，空间群为Ｉ４／ｍｍｍ，ａ＝４．０３０３（１），ｃ＝９．７７４５（４）。每个晶胞中有２个化合式量。衍射数据指标化可靠性因子Ｆ２９＝５４．６（０．００９３５７）。     

Layered La-Ba-Cu mixed oxides with perovskite structure as catalyst for NO reduction by CO

The mixed oxides, including LaBa₂Cu₃O₇, LaBaCu₂O₅, La₄BaCu₅O₁₂ with perovskite structure, were prepared. The catalysts were characterized by means of chemical analysis, XRD, H₂-TPR. It was found that their structures were layered ABO₃ perovskite structure and they were the active catalysts for the NO reduction by CO. The existance of Cu³⁺ is an important factor to give the catalysts a high activity for the NO reduction by CO.     

Preparation and characterization of γ-La<Subscript>2</Subscript>S<Subscript>3</Subscript> nanoparticles from thermal decomposition

To synthesize pure γ-La₂S₃ at lower temperature, lanthanide complex La(Et₂S₂CN)₃·phen, containing La-S bond, was chosen as the precursors to decompose. The obtained samples were characterized by X-ray power diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) with an energy dispersive spectrometer and UV-Vis diffuse reflectance spectra. The decomposition mechanism of the lanthanide complex was studied by thermogravimetric analyses (TGA). The results show that the obtained samples are cubic phase particles with sizes among 20–50 nm and the band gap is 2.97 eV, which is bigger than that of its bulk crystal. TG/DTG results indicate that La(Et₂S₂CN)₃·phen decomposed to γ-La₂S₃ via La₄(Et₂S₂CN)₃ as an intermediate product.     

Microstructural study and numerical simulation of phase decomposition of heat treated Co–Cu alloys

The influence of heat treatment on the phase decomposition and the grain size of Co–10 at% Cu alloy were studied. Few samples were aged in a furnace for either 3 or 5 h and then quenched in iced water. The materials and phase compositions were investigated using energy dispersive spectrometry and X-ray diffraction techniques. X-ray diffraction analysis showed that the samples contained Co, Cu, Cu O, Co Cu2O3, Co Cu O2 phases in different proportions depending on the heat treatment regimes. The formation of dendrite Co phase rendered the spinodal decomposition while the oxidations prevent the initiation of the spinodal decomposition even for a deep long aging inside the miscibility gap.Since the Bragg reflections from different phases of Co–Cu alloy significantly overlap, the crystal structural parameters were refined with FULLPROF program. The shifts in the refined lattice constants(a, b and c), the space group and the grain size were found to be phase- and heat treatment-dependant. Two-dimensional computer simulations were conducted to study the phase decomposition of Co–Cu binary alloy systems.The excess free energy as well as the strain energy, without a priori knowledge of the shape or the position of the new phase, was precisely evaluated. The results indicate that the morphology and the shape of the microstructure agree with SEM observation.     

稀土氧化物掺杂对TiO2/沸石光催化性能的影响

以钛酸丁酯和稀土氧化物为原料, 采用溶胶 凝胶法制备了镧、 钕和镱稀土离子掺杂TiO₂/沸石光催化剂. 通过XRD和IR方法对样品进行表征, 研究了不同沸石粒径及不同稀土氧化物掺杂量(质量分数)对农药敌敌畏光催化降解性能的影响. 结果表明, 当沸石最佳粒径为0.15 mm, La³⁺掺杂量质量分数为3.0%时（以TiO₂质量计）, 稀土离子的掺杂可显著提高TiO₂//沸石的光催化降解性能.     

Fabrication of high quality strained SiGe on Si substrate by RPCVD

In this study,the growth kinetics of SiGe in a reduced pressure chemical vapor deposition system using dichlorosilane(SiH2Cl2) and germane(GeH4) as the Si and Ge precursors were investigated.The SiGe growth rate and Ge content were found to depend on the deposition temperature,GeH4 flow and reactor chamber pressure.The SiGe growth rate escalates with increasing deposition temperature,while the Ge content is reduced.The SiGe growth rate accelerates with increasing GeH4 flow,while the Ge content increases more slowly.According to the experimental data,a new relationship between Ge content(x) and F(GeH4)/F(SiH2Cl2) mass flow ratio is deduced:x2.5/(1x) = nF(GeH4)/F(SiH2Cl2).The SiGe growth rate and Ge content improve with increasing reactor chamber pressure.By selecting proper precursor flows and reactor pressure,SiGe films with the same Ge content can be fabricated at various temperatures.However,the quality of the SiGe crystals is clearly dependent on the deposition temperature.At lower deposition temperature,higher crystalline quality is achieved.Because the growth rate dramatically drops with lower temperatures,the optimum growth temperature must be a compromise between the crystalline quality and the growth rate.X-ray diffraction,Raman scattering spectroscopy and atomic force microscopy results indicate that 650°C is the optimum temperature for fabrication of Si0.75Ge0.25 film.     

喹啉酮荧光探针的合成及性能研究

通过乙酰乙酸乙酯与间苯二胺反应制得4-甲基-7-氨基-2-喹啉酮(3),进一步与氨三乙酸反应制得新的喹啉酮酰胺衍生物5,其结构经红外、核磁氢谱、质谱等表征。5与La(NO3)3配位得到新的配合物6。元素分析、红外、质谱、热重-差热分析和摩尔电导等确定配合物6的分子式为[La(C16H15N3O6)NO3]·4H2O。荧光测试表明,化合物5与稀土金属La配位后,荧光发光强度明显增加,荧光区间变窄。此外,化合物5与不同浓度鲱鱼精DNA作用的荧光变化情况表明:化合物5与鲱鱼精DNA有较强的相互作用,荧光光谱变化明显;鲱鱼精DNA对化合物5有荧光增强作用,DNA浓度为4.02×10-6mol/L时,增幅最大可达40%。实验结果表明,化合物5在DNA检测或疾病防治等方面有潜在的应用价值。     

Highly effective La-deficient La_(1-x)Ce_xMnO_3 mixed oxides for the complete oxidation of methane

La-deficient La_1-xCe_xMnO₃ mixed oxides, obtained by selective dissolution in 1 M nitric acid, were employed in methane complete oxidation. The majority of the La cations in these perovskites were removed, resulting in increased specific surface areas, better reducibility and greater activity. Incorporation of a small amount of Ce stabilized the structure and a perovskite phase persisted in La-deficient La_1-xCe_xMnO₃ mixed oxides af...