A位掺杂Sr1-xLa2x/3Bi4Ti4O15陶瓷的铁电介电性能

Sr1-xL a2x/3B i4T i4O15(SLBT-x,x=0.00~0.75)陶瓷居里温度(tC)随掺杂量的增加而降低,显示掺杂导致晶格畸变减小,这是由于L a3 取代Sr2 位而产生的A位空位弱化了相邻T iO6八面体的耦合作用所致.样品介电峰峰高随掺杂量增加而降低,峰形宽化,表现出弥散相变的特征,这是由于L a3 和Sr2 离子半径的差异以及高掺杂量下L a3 离子部分进入铋氧层所致.样品的剩余极化(2Pr)在掺杂量为0.3时增加到23.1×10-2C.m-2,同时矫顽场降低到79.6×105V.m-1,高价掺杂所形成的偶极子缺陷使得样品铁电性能明显改善.     

Nd掺杂Bi4Ti3O12-SrBi4Ti4O15陶瓷的电性能

Nd等价取代Bi_4Ti_3O_(12)-SrBi_4Ti_4O_(15)的A位,形成SrBi_(8-x)Nd_xTi_7O_(27)(x=0.00～1.50)共生陶瓷.结果表明:Nd掺杂未改变晶体的共生结构,样品剩余极化(2P_r)在掺杂量x=0.50时取得极大值,为32.3×10~(-2) C·m~(-2),比未掺杂时增加了70%,而矫顽场则从未掺杂时的90.5×10~5 V·m~(-1)上升为103×10~5 V·m~(-1).Nd掺杂使得样品的居里温度(t_C)有所下降,x=0.50时的t_C为538℃.掺杂使得样品的压电性能明显改善,压电系数d_(33)从未掺杂时的6 pC·N~(-1)增加到x=0.50时的11 pC·N~(-1).     

Nb掺杂SrBi_4Ti_4O_(15)陶瓷的铁电介电性能

用传统的固相烧结工艺,制备了铌掺杂SrBi_4Ti_4O_(15)(SBTi)铁电陶瓷SrBi4-x/3Ti4-xNbxO15(SBTN-x),Nb掺杂量x=0.00,0.003,0.012,0.03和0.06.X射线衍射的结果表明,所有样品均为单一的层状钙钛矿结构相,Nb掺杂未改变SBTi的晶体结构.铁电测量结果表明,Nb掺杂使SBTi的铁电性能得到较大改善.随掺杂量x的增加,样品的剩余极化(2Pr)呈现出先增大,后减小的规律.在x=0.03时,2Pr达到最大值24.7μC/cm2,而SrBi4Ti4O15的2Pr仅为15.8μC/cm2,掺杂使2Pr提高近60%.同时,样品的矫顽场几乎不随掺杂量的改变而变化.掺杂后,样品的居里温度变化很小,表明Nb对SrBi_4Ti_4O_(15)的B位掺杂基本未影响材料的热稳定性能.     

Zn掺杂对MgB2电子结构及超导转变温度的影响

建立Zn掺杂含量不同的6个MgB2模型Mg1-xZnxB2（x=0,1/18,1/16,1/12,1/8,1/6）,对模型进行参数优化,分析Zn掺杂对MgB2几何构型的影响;计算纯MgB2和x为1/6,1/8,1/12时掺杂模型的能带结构和态密度,对得到的结果进行分析和处理,并指出Zn掺杂时MgB2超导临界转变温度Tc变化的大致规律.根据强耦合BCS理论的Mc-Millan公式,推导第一性原理计算公式,计算Zn掺杂MgB2的超导临界转变温度Tc.     

SrBi_(4-x)Nd_xTi_4O_(15)铁电陶瓷性能研究

用固相烧结法制备了不同Nd掺杂量的SrBi4-xNdxTi4O15(SBNT-x,x=0.00～1.00)铁电陶瓷.X射线衍射谱显示Nd掺杂未改变SrBi4Ti4O15(SBTi)的晶体结构.铁电测量表明,适量的Nd掺杂使SBTi的剩余极化(2Pr)显著增加.当x=0.18时,2Pr达到极大值,为25.8μC/cm2,和未掺杂相比,增长约56%.样品的矫顽场在x=0.00到0.18之间几乎不变,而在更大掺杂量下,随掺杂量的增加而逐步减小.掺杂引起材料中点缺陷浓度降低和晶格畸变减小,这两种因素的共同作用决定了剩余极化的变化.变温介电谱显示,样品的居里温度随掺杂量的增加而下降.在掺杂量大于0.75以后,SBNT-x样品出现驰豫铁电体的典型特征.     

粉末套管法制备碳掺杂MgB2线材及其超导电性

采用原位粉末套管法制备了无定形碳掺杂MgB2/Nb/Cu超导线材。利用扫描电镜、输运法测试和磁测法等手段分析了无定形碳掺杂对超导线材的微观结构和超导电性的影响。结果表明,无定形碳掺杂降低了线材的临界转变温度,但可以显著提高超导线材的临界磁场和临界电流密度,750℃处理线材在20K下的不可逆场达到5.2T。实验结果表明,采用无定形掺杂原位粉末套管法可以制备出具有高临界电流密度的MgB2线材。     

超高载流能力的干净极限MgB2薄膜与超高上临界场的碳掺杂MgB2薄膜

本本文报道了基于混合物理化学气相沉积方法制备高质量干净极限MgB2薄膜和碳掺杂MgB2薄膜的最新结果.c轴外延干净的MgB2薄膜具有高达41.4K的超导转变温度,低于0.3μΩcm的正常态剩余电阻率.样品处于干净极限.薄膜表面RMS粗糙度小于5nm,在150nm宽的纳桥上测量到了大于1×108A/cm2的临界电流密度,接近MgB2,材料理论上的拆对电流密度,同样的结果也从对相同样品的磁性测量中推导得到.利用甲烷作为碳源,基于改进的热丝辅助混合物理化学气相沉积装置,高性能碳掺杂MgB2薄膜得以成功实现.不同程度的碳掺杂调制了MgB2双能带的带内和带间散射,进而明显增强了薄膜的上临界场.在重碳掺杂MgB2薄膜样品中,平行于样品表面的上临界场分量,Hc2//ab在临界温度(27K)附近对温度的斜率,-dHc2//ab/dT达到了3 T/K,暗示了样品具有非常高的上临界场Hc2//ab(0).碳掺杂同时使得样品的磁通钉扎能力得到很大增强.高场下具有比干净样品高出数个量级的临界电流密度,和更高的不可逆场.     

Co掺杂对共沉淀法制备Co-Ni铁氧体纳米颗粒结构及磁性能影响研究

利用共沉淀法成功地合成了(x=0、0.2、0.2、0.4和0.8)纳米颗粒并进行了退火处理.对样品进行了XRD、FT-IR、TG-DSC和VSM等表征.结果显示,样品前驱体中存在少量的杂质如吸收水和硝酸盐,退火处理是获得单相和高度结晶Co-Ni尖晶石铁氧体的必备条件.所有退火样品均是单相立方尖晶石结构纳米晶粒,其平均尺寸在40~60 nm的范围.晶格常数随着Co掺杂含量增加而增加.比表面积测试显示Co掺杂量的增加在一定程度上减少了样品的表面体积比,有利于CoNi铁氧体的晶粒生长.样品饱和磁化(Ms)和矫顽力(Hc)与钴掺杂量密切相关.Ms值从37.5 emu/g(x=0)增加到62.0 emu/g(x=0.8),这是由于较高的掺杂Co~(2+)阳离子磁矩的增强导致A和B亚晶格之间的超交换相互作用增强.矫顽力Hc的大小从73.0 Oe(x=0)到558.3 Oe(x=0.8),这主要是由于掺杂Co~(2+)阳离子具有比Ni~(2+)阳离子更大的磁晶各向异性常数.     

Ca、Zn掺杂对高温超导体YBa2Cu3O7-δ晶体结构的影响

采用固相反应法成功的制备出了Y1-yCayBa2Cu3-xZnxO7-δ(y=0,x=0;y=0.1,x=0,0.05,0.1,0.2)的系列样品.利用X射线衍射(XRD)和扫描电镜(SEM)对所制备系列样品结构进行了研究.结果表明,在整个掺杂范围内样品的单相性很好.随着锌离子掺杂量的增加,样品的晶格常数和表面形貌都发生了较大的变化,这是因为掺杂使样品的电子局域化增加,从而使样品的结构发生变化.     

Nd掺杂BiFeO3多铁陶瓷的磁电性能

采用快速液相烧结工艺制备出Bi1-xNdxFeO3(BNFO-x,x=0.00～0.20)多铁陶瓷样品,研究了掺杂对BiFeO3微观结构和铁电、磁电及介电性能的影响.X射线衍射谱显示样品BiFeO3的相均已形成,且在掺杂量x=0.10附近出现结构相变.掺杂后样品的剩余磁化(2Mr)和剩余极化(2Pr)都有一定程度的提高,以铁电性能改善最为明显.当掺杂量x=0.10时,样品的耐压性能最好,可观察到完全饱和的电滞回线,且剩余极化达到最大值, 2Pr=0.494 C·m-2,比未掺杂时提高了117.6%. 随着Nd的掺杂,样品介电常数随温度变化的关系曲线在尼尔温度之前179℃附近多出一个介电峰,但是在BiFeO3样品中并未发现该介电峰.     

Doping effects of ZrC and ZrB2 in the powder-in-tube processed MgB2 tapes

We have investigated the effects of ZrC and ZrB2 doping on the superconducting properties of the powder-in-tube processed MgB2/Fe tapes. Sam- ples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM/EDX), transport and magnetic measurements. We confirmed the fol- lowing quite different roles of ZrC and ZrB2 in MgB2. ZrC doping was found to decrease the transport critical current density (Jc) at 4.2 K, while the critical temperature (Tc) kept constant. In contrast, the Jc values in magnetic fields were enhanced greatly by the ZrB2 addition, which resulted in a decrease in Tc by only 0.5 K. The reason for different effects of two dopants is also discussed.     

掺杂二硼化镁体系超导电性与平均价电子数的关系

用平均价电子数作为掺杂二硼化镁超导电性的一个判断标准，对二硼化镁超导体及掺杂二硼化镁超导体系平均电子数进行研究．结果表明，二硼化镁体系超导材料的平均价电子数值在Tc-Zv图中集中分布在2.61附近.     

Effect of Nano－SiC and Nano－Si Doping on Critical Current Density of MgB2

The discovery of superconductivity in magnesium diboride (MgB2) has opened up a new field in materials science research. It offers a possibility of a new class of high performance superconducting materials for practical applications because of the relatively low cost of fabrication, high critical current densities (Jc)and fields, large coherence length, absence of Weak links, higher Tc (Tc = 39 K) compared with Nb3Sn and Nb-Ti alloys (two or four times that of Nb3Sn and Nb-Ti alloys). However, the weak flux pinning in the magnetic field remains a major challenge. This paper reports the most interesting results on nenomaterial (SiC and Si) doping in magnesium diboride. The high density of nano-scele defects introduced by doping is responsible for the enhanced pinning. The fabrication method, critical current density, microstructures, flux pinning and cost for magnesium diboride bulks, wires and tapes are also discussed. It is believed that high performance SiC doped MgB2 will have a great potential for many practical applications at 5K to 25K up to 5T.     

Effect of Nano-SiC and Nano-Si Doping on Critical Current Density of MgB_2

The discovery of superconductivity in magnesium diboride (MgB2) has opened up a new field in materials science research. It offers a possibility of a new class of high performance superconducting materials for practical applications because of the relatively low cost of fabrication, high critical current densities (Jc) and fields, large coherence length, absence of weak links, higher Tc(TC = 39K) compared with Nb3Sn and Nb-Ti alloys (two or four times that of Nb,,Sn and Nb-Ti alloys). However, the weak flux pinning in the magnetic field remains a major challenge. This paper reports the most interesting results on nanomaterial (SiC and Si) doping in magnesium diboride. The high density of nano-scale defects introduced by doping is responsible for the enhanced pinning. The fabrication method, critical current density, microstructures, flux pinning and cost for magnesium diboride bulks, wires and tapes are also discussed. It is believed that high performance SiC doped MgB2 will have a great potential for m     

Enhancement of the high-magnetic-field critical current density of superconducting MgB2 by proton irradiation

Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially attractive for technological applications in the temperature range 20-30 K. But in the bulk material, the critical current density (Jc) drops rapidly with increasing magnetic field strength. The magnitude and field dependence of the critical current are related to the presence of structural defects that can 'pin' the quantized magnetic vortices that permeate the material, and a lack of natural defects in MgB2 may be responsible for the rapid decline of Jc with increasing field strength. Here we show that modest levels of atomic disorder induced by proton irradiation enhance the pinning of vortices, thereby significantly increasing Jc at high field strengths. We anticipate that either chemical doping or mechanical processing should generate similar levels of disorder, and so achieve performance that is technologically attractive in an economically viable way.     

Superconducting Properties and Microstructure in MgB2 Bulks, Wires and Tapes

We prepared a series of MgB2 bulk samples under different temperatures, holding time and increasing rates in temperature by the solid state reaction. The thermodynamic behavior and phase formation in the Mg-B system were studied by using DTA, XRD and SEM. The results indicate that the formation of the MgB2 phase is very fast and the high increasing rate in temperature is necessary to obtain high quality MgB2. In addition, the effects of the Zr-doping in Mg1-xZrxB2 bulk samples fabricated by the solid state reaction at ambient pressure on phase compositions, microstructure and flux pinning behavior were investigated by using XRD, SQUID magnetometer, SEM and TEM. Critical current density Jc can be significantly enhanced by the Zr-doping and the best data are achieved in Mg0.9Zr0.1B2. For this sample, Jc values are remarkably improved to 1. 83 × 106 A/cm2 in self-field and 5. 51 × 105 A/cm2in 1T at 20K. Also, high quality MgB2/Ta/Cu wires and tapes with and without Ti-doping, MgB2/Fe wires and 18 filamen     

MgB2超导体的相图及其对薄膜制备的指导作用

MgB2适合于制备约瑟夫森结,在超导电子学领域有很好的应用前景。制备高质量的MgB2薄膜至关重要,应用Mg-B/Mg-B-O体系的相图指导MgB2薄膜生长意义重大。总结MgB2相体系及相关系,详细对比分析Mg-B/Mg-B-O体系的热力学相图,总结分析富氧区杂项MgO的生成机理及其对MgB2薄膜质量和性能的影响,研究分析有氧体系下Mg-B/Mg-B-O热力学相图对MgB2薄膜材料制备生长的指导意义,探讨HPCVD环境下采用原位生长技术制备MgB2超导薄膜时热力学相图的指导作用及相关制备工艺。     

Loss of superconductivity with the addition of Al to MgB2 and a structural transition in Mg1-x AlxB2

The basic magnetic and electronic properties of most binary compounds have been well known for decades. The recent discovery of superconductivity at 39 K in the simple binary ceramic compound magnesium diboride, MgB2, was therefore surprising. Indeed, this material has been known and structurally characterized since the mid 1950s (ref. 2), and is readily available from chemical suppliers (it is commonly used as a starting material for chemical metathesis reactions). Here we show that the addition of electrons to MgB2, through partial substitution of Al for Mg, results in the loss of superconductivity. Associated with the Al substitution is a subtle but distinct structural transition, reflected in the partial collapse of the spacing between boron layers near an Al content of 10 per cent. This indicates that superconducting MgB2 is poised very near a structural instability at slightly higher electron concentrations.     

High critical current density in powder-in-tube processed MgB2/Ta/Cu wire

The magnetization of dense MgB2/Ta/Cu wires prepared by the powder-in-tube method is measured by a SQUID magnetometer. The results indicate that the critical temperature of MgB2/Ta/Cu is around 38.4 K with a sharp transition width of 0.6 K. The MgB2/Ta/Cu wire shows a strong flux pinning and the critical current density is higher than 105 A/cm2 (5 K, self-field) and 104 A/cm2 (20 K, 1 T). Also, the irreversibility field of the sample reaches 6.6 T at 5 K.     

rGO/Ce掺杂SnO_2复合纳米纤维的制备及H_2S气敏性能研究

采用静电纺丝法制备还原氧化石墨烯(rGO)/SnO_2复合纳米纤维,研究了Ce掺杂及掺杂量对rGO/SnO_2纳米纤维的微结构与气敏性能的影响.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM,带SAED)、X射线衍射仪(XRD)及拉曼光谱仪(Raman)对复合纳米纤维的结构与形貌进行表征.结果表明:不同含量Ce掺杂对复合纳米纤维的晶体结构和形貌均无明显影响.气敏测试结果表明:不同的Ce掺杂量均能改善rGO/SnO_2纳米纤维对H_2S的灵敏度,在Ce掺杂摩尔分数为3%时复合材料对H_2S具有最佳的气敏性能,在75℃时5μL/L H_2S气体的灵敏度高达300,同时选择性和响应恢复性能也均有显著提高.