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1.
CVD金刚石膜场发射机制的探讨   总被引:2,自引:0,他引:2  
通过分析CVD金刚石膜的结构,对CVD金刚石膜的场发射机制进行了研究,结果表明金刚石膜内含有一定数量的石墨,当电子通过石墨时从石墨的电场中获得能量增大了电子隧穿金刚石晶粒的系数,据此提出了金刚石膜内石墨相增强电子隧穿金刚石颗粒以增强金刚石膜场电子发射的机制,并且根据该机制解释了一些实验现象。  相似文献   

2.
The growth of coarse grains of diamond was observed with graphite as carbon source and Fe80Ni20 alloy powder as catalyst at HPHT in a China-type SPD 6×1670T cubic high-pressure apparatus with highly exact control system. To synthesize coarse grains of diamond crystal with high quality, advanced indirect heat assembly, powder catalyst technology and catalyst with optimal granularity were used. Especially the nucleation of diamond and the growth rate were strictly controlled by the optimized synthesis craft. At last, diamond crystals (about 0.85 mm) in the perfect hex-octahedron shape were successfully synthesized at ~5.4 GPa and ~1360℃ in 60 min. The characteristic of crystal growth with powder catalyst technology under HPHT was discussed. The results and techniques might be useful for production of coarse grains of diamond.  相似文献   

3.
High quality cubic diamond crystals were grown using the temperature gradient method at high pressure and high temperature(HPHT),in a new FeNi alloy as solvent.The crystals were grown at relatively low temperatures suitable for the growth of {100} faces.An increase in the radial growth rate,and inhibition of the axial growth caused the growth of large,high quality cubic diamond single crystals at high growth rates.For example,over 33 h,the radial growth rate was 0.22 mm/h,while the axial growth rate was only 0.08 mm/h;the growth rate by weight was also increased to 7.3 mg/h.The yellow color of our crystal samples was more uniform than samples from Sumitomo Corporation of Japan and Element Six Corp.The Raman FWHW of the 1332 cm 1 peak in our diamond sample was smaller than the Element Six Corp.sample,but larger than that of the Sumitomo Corp.sample.The nitrogen content of our diamond samples was 240 ppm,which was much higher than the Sumitomo and Element Six samples because of the higher growth rate of our diamond samples.  相似文献   

4.
The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive boron on type-Ib gem diamond was extensively studied including the growth characteristic,morphology and nitrogen concentration.The synthesized boron-doped type-Ib gem diamond crystals were characterized by optical microscope (OM),scanning electron microscope (SEM) and infrared spectrometer (IR)...  相似文献   

5.
Diamond crystals with low nitrogen concentration were synthesized from the Fe-Ni-C system with Ti additive at high pressure and high temperature (HPHT) in a china-type cubic high pressure apparatus (CHPA). The synthesis pressure range was 4.8-5.2 GPa, and the temperature range was 1420-1600 K. The lowest synthesis pressure for diamond fell first and then rose with the increase of Ti additive. The color, shape, surface morphology and nitrogen impurity concentration of the synthesized diamond crystals were characterized using optical microscopy (OM), scanning electron microscopy (SEM) and micro Fourier transform infrared (FTIR) spectrometry. The results show that the Ti additive has significant effects on color, growth rate, crystal shape, surface morphology and nitrogen impurity con- centration of the synthesized diamond crystals. The color of diamond crystals synthesized without Ti additive is yellow, while that with Ti additive becomes light and nearly colorless. The growth rate without Ti additive is higher than that with Ti additive. The crystal shapes of as-grown diamond crystals vary with the increase of Ti additive. The {111} crystal faces become dominant and some {311} crystal faces appear with the increase of Ti additive. The concentration of nitrogen impurity in diamond crystals without Ti additive is higher than that with Ti additive.  相似文献   

6.
Investigations of crystal habit, micro-topographic imaging, micro-composition and micro-structural analysis of HPHT synthetic diamonds from the Fe-C(H) system indicate that most of them have an octahedral habit. The crystals grow mainly layer-to-layer from center to periphery. HPHT synthetic diamond is smaller in size than natural diamond because it only goes through nucleation and growth in the early stage. In the middle and late stages, due to the coalescence of diamond grains related to differences of surface energy, the growth of HPHT synthetic diamond is limited. The active energy (E) of transforming single nitrogen into a nitrogen-pair is lowered and the time of transforming single nitrogen into a nitrOgen-pair is shortened because of the existence of hydrogen. Therefore, aggregate nitrogen (A-centers) may exist in synthetic diamond from HPHT and explosive detonation processes. It needs further discussion on a worldwide view that the time of natural diamond formation extracted from nitrogen aggregation is some hundred million years. Consideration of the way in which surface energy influences the growth of diamond can help to understand some of the remaining issues (e.g. growth mechanism, etc.) in the HPHT synthetic process and effectively explain the formation of natural diamond in terms of HPHT thermodynamic theory. Especially, it is important to pay more attention to the influence of hydrogen on surface energy in that hydrogen may be a "bridge" for explaining the formation of HPHT synthetic and natural diamond.  相似文献   

7.
本文报道作者用 CoCl_2·6H_2O 溶液浸泡石墨片渗钴使钴元素在高温高压前进入石墨的实验结果.实验用扫描电镜、x 射线能谱及透射电镜观察,证明钴已渗入到石墨片中.用该石墨片合成的金刚石产量和粒度比都有明显改善.从而验证了石墨在触媒作用下向金刚石转化的机理.  相似文献   

8.
对钠硼解石在H3BO3水溶液中,常压沸点温度下的溶解和相转化进行了研究,通过化学分析及X射线粉晶衍射,红外光光谱物相鉴定表明,相转化产物为CaO.3B2O3.4H2O,提出相转移化机理。  相似文献   

9.
毛毛虫树三角和四边形变换下的割宽不变性   总被引:1,自引:0,他引:1       下载免费PDF全文
图的割宽问题在一般情形下,是NP难的,但对于树的情形有多项式算法.本文对于毛毛虫树给出了对其进行三角和四边形变换后,割宽保持不变的充分必要条件.  相似文献   

10.
ZrC/奥氏体相界面形变诱导相变动力学   总被引:2,自引:0,他引:2  
研究热模拟单向压缩条件下含ZrC粒子的低碳锰(铌)钢在形变诱导相变过程中的铁素体转变动力学关系。研究结果表明:添加ZrC粒子使试验用钢奥氏体晶界的形核率明显增加,影响形变诱导铁素体的形态、分布及晶粒细化效果;高温变形时由于形变诱导的作用,铁素体转变量随应变的增大不断增加,而铁素体晶粒的细化主要是由于动态再结晶的作用,试验用钢在形变诱导相变的变形温度TAe3~TAr3之间的低温区进行变形(TAe3为形变诱导相变的开始温度,TAr3为形变诱导相变的终止温度),可以加速铁素体形核;同时,一定粒径和体积分数(0.6%)的ZrC粒子作为形变和再结晶核心,不仅阻碍位错的运动,而且造成位错密度增大,因而提高α-Fe形核率。在温度为900℃、应变速率为1s-1的条件下,试验用钢获得超细组织对应的ZrC粒子临界体积分数为0.6%。  相似文献   

11.
不同湿度条件下外源铅、锌在土壤矿物中的形态转化   总被引:1,自引:1,他引:0  
湿度条件是影响重金属在土中存在形态的重要因素之一,通过对纯高岭土和石英砂矿物中添加外源铅、锌离子,并在恒干、干湿交替和恒湿三种条件下培养32 d,中间按照BCR法测定了铅、锌的形态并测定了土样的p H和阳离子交换量(CEC)的变化。研究发现可溶态外源铅、锌进入惰性石英砂中有2.5%转化成可还原形态(F2),并且经过不同干湿条件下的养护后,转化到其他形态的总量不超过10%,说明重金属本身在土中的形态变化较小。进入高岭土中的可溶态铅、锌立即有34%转化成其他形态,而且随着培养时间的增加,可交换态(F1)和可氧化态(F3)含量大多降低并向F2和残渣态(F4)转化,其转化速率是恒干干湿循环恒湿。土样的p H均随培养时间先降低后增加,而高岭土的CEC总体持续降低,说明在老化过程中养护条件会促进高岭土与阳离子的结合,并且使结合的阳离子不断向矿物晶格内部转移,从而向更稳定的结合形态转化。  相似文献   

12.
13.
在干摩擦条件下利用 SRV磨损试验机比较了在硬质合金基体上金刚石薄膜、石墨 /金刚石复合膜以及硬质合金 3种试样的摩擦学性能。利用扫描电子显微镜观察了试样和磨痕的表面形貌。利用表面形貌仪测试了磨损体积。研究了振动频率对试样的摩擦学性能影响。结果表明 ,在干摩擦条件下 ,金刚石薄膜与石墨 /金刚石复合膜的摩擦学性能差别不大 ,二者的磨损机理均为微断裂磨损。在干摩擦条件下 ,高频时金刚石薄膜的耐磨性是硬质合金耐磨性的 8~ 10倍 ,其原因是硬质合金的磨损机理存在着从粘着磨损到微断裂磨损的转变  相似文献   

14.
低温域湿地植物根际氮转化强度   总被引:2,自引:0,他引:2  
在低温条件下(0 ~15℃),对菖蒲、芦苇、香蒲等10种湿地植物根际土壤的氮转化强度进行对比分析.结果表明,湿地植物根际氨化、反硝化作用强度随温度下降而逐渐降低,硝化作用强度在10℃左右出现大幅下降;低温域植物根际反硝化作用强度明显高于硝化作用强度;植物种类对根际土壤氨化、硝化作用强度影响较大,其中香蒲氨化作用强度最大...  相似文献   

15.
以迭代函数系统理论为基础,研究并导出了实现IFS吸引子图像仿射变换的分形码变换通式,讨论了几种常见的吸引子变换.为分形图像变换和分形图形设计提供了一种简捷、高效和灵活的处理方式.  相似文献   

16.
金刚石和石墨的价电子结构与硬度的关系   总被引:2,自引:0,他引:2  
根据余氏“固体与分子经验电子理论”,应用键距差方法,对工业中广泛应用的金刚石和石墨的价电子结构进行计算和分析,计算结果较好地解释了金刚石的本质高硬度和石墨的本质低硬度。  相似文献   

17.
大面积CVD金刚石膜的热铁板抛光   总被引:8,自引:0,他引:8  
研制成功国内第1台大面积CVD金刚石膜热铁板抛光机,它可以在10^-3pa真空条件下,加热到1100℃;抛光台可以在0-10r/min间实现无级调速,一次完成3片φ110mm的金刚石膜的抛光,金刚石膜在980℃,2h抛光的结果表明该装置有良好的抛光效果。金刚石膜在980℃抛光不同时间的Raman谱表明,金刚石热铁板抛光是金刚石石墨化和C原子不断扩散的过程。  相似文献   

18.
介绍利用高温高压(HPHT)合成高质量金刚石单晶和化学气相沉积法(CVD)制备金刚石薄膜的设备、方法、工艺参数以及热丝CVD和微波等离子体CVD的优缺点;P型和N型金刚石掺杂研制现状.重点介绍N型金刚石掺杂的困难,氮、锂、钠、磷、硫等杂质的掺杂效果,共掺杂对于金刚石薄膜的影响,以及近年来P型和N型掺杂取得的成果.  相似文献   

19.
研究基于Box-Cox变换与Johnson变换方法计算PCIs的有效性,比较Box-Cox变换与Johnson变换计算PCIs的性能优劣,仿真结果显示,Box-Cox变换与Johnson变换均能将常见概率分布转换为正态分布,成功率超过97%,而Johnson变换的转换能力更强,成功率超过99.5%。在计算PCIs的有效性方面,Box-Cox变换与Johnson变换的性能差异不大,利用PCIs估计的产品不合率与理论不合格率相比,相对误差均在2%以内。  相似文献   

20.
设On是[n](n≥3)上的保序变换半群,证明了半群On的顶端Jn-1中平方幂等元个数为2n-4。  相似文献   

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