Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors

For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal-oxide-semiconductor field-effect transistor (MOSFET). In the current generation of transistors, the transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.     

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Semiconducting carbon nanotubes and nanowires are potential alternatives to planar metal-oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique electronic structure and reduced carrier scattering caused by one-dimensional quantum confinement effects. Studies have demonstrated long carrier mean free paths at room temperature in both carbon nanotubes and Ge/Si core/shell nanowires. In the case of carbon nanotube FETs, devices have been fabricated that work close to the ballistic limit. Applications of high-performance carbon nanotube FETs have been hindered, however, by difficulties in producing uniform semiconducting nanotubes, a factor not limiting nanowires, which have been prepared with reproducible electronic properties in high yield as required for large-scale integrated systems. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar counterparts is still unclear. Here we report studies on Ge/Si core/shell nanowire heterostructures configured as FETs using high-kappa dielectrics in a top-gate geometry. The clean one-dimensional hole-gas in the Ge/Si nanowire heterostructures and enhanced gate coupling with high-kappa dielectrics give high-performance FETs values of the scaled transconductance (3.3 mS microm(-1)) and on-current (2.1 mA microm(-1)) that are three to four times greater than state-of-the-art MOSFETs and are the highest obtained on NWFETs. Furthermore, comparison of the intrinsic switching delay, tau = CV/I, which represents a key metric for device applications, shows that the performance of Ge/Si NWFETs is comparable to similar length carbon nanotube FETs and substantially exceeds the length-dependent scaling of planar silicon MOSFETs.     

Self-assembled monolayer organic field-effect transistors

The use of individual molecules as functional electronic devices was proposed in 1974 (ref. 1). Since then, advances in the field of nanotechnology have led to the fabrication of various molecule devices and devices based on monolayer arrays of molecules. Single molecule devices are expected to have interesting electronic properties, but devices based on an array of molecules are easier to fabricate and could potentially be more reliable. However, most of the previous work on array-based devices focused on two-terminal structures: demonstrating, for example, negative differential resistance, rectifiers, and re-configurable switching. It has also been proposed that diode switches containing only a few two-terminal molecules could be used to implement simple molecular electronic computer logic circuits. However, three-terminal devices, that is, transistors, could offer several advantages for logic operations compared to two-terminal switches, the most important of which is 'gain'-the ability to modulate the conductance. Here, we demonstrate gain for electronic transport perpendicular to a single molecular layer ( approximately 10-20 A) by using a third gate electrode. Our experiments with field-effect transistors based on self-assembled monolayers demonstrate conductance modulation of more than five orders of magnitude. In addition, inverter circuits have been prepared that show a gain as high as six. The fabrication of monolayer transistors and inverters might represent an important step towards molecular-scale electronics.     

Ballistic carbon nanotube field-effect transistors

A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube--metal junctions. These energy barriers severely limit transistor conductance in the 'ON' state, and reduce the current delivery capability--a key determinant of device performance. Here we show that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduces or eliminates the barriers for transport through the valence band of nanotubes. In situ modification of the electrode work function by hydrogen is carried out to shed light on the nature of the contacts. With Pd contacts, the 'ON' states of semiconducting nanotubes can behave like ohmically contacted ballistic metallic tubes, exhibiting room-temperature conductance near the ballistic transport limit of 4e(2)/h (refs 4-6), high current-carrying capability (approximately 25 micro A per tube), and Fabry-Perot interferences at low temperatures. Under high voltage operation, the current saturation appears to be set by backscattering of the charge carriers by optical phonons. High-performance ballistic nanotube field-effect transistors with zero or slightly negative Schottky barriers are thus realized.     

2D perovskites for field-effect transistors

Metal halide perovskites have gained a lot of attention in the field of solar cells and light-emitting diodes because of their excellent optoelectronic properti...     

Top-gated graphene field-effect transistors on SiC substrates

We report on a demonstration of top-gated graphene field-effect transistors(FETs) fabricated on epitaxial SiC substrate.Composite stacks,benzocyclobutene and atomic layer deposition Al2O3,are used as the gate dielectrics to maintain intrinsic carrier mobility of graphene.All graphene FETs exhibit n-type transistor characteristics and the drain current is nearly linear dependence on gate and drain voltages.Despite a low field-effect mobility of 40 cm2/(V s),a maximum cutoff frequency of 4.6 GHz and a maximum oscillation frequency of 1.5 GHz were obtained for the graphene devices with a gate length of 1 μm.     

Nonvolatile memory devices based on organic field-effect transistors

Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.     

Inscribed matter as an energy-efficient means of communication with an extraterrestrial civilization

It is well known that electromagnetic radiation-radio waves-can in principle be used to communicate over interstellar distances. By contrast, sending physical artefacts has seemed extravagantly wasteful of energy, and imagining human travel between the stars even more so. The key consideration in earlier work, however, was the perceived need for haste. If extraterrestrial civilizations existed within a few tens of light years, radio could be used for two-way communication on timescales comparable to human lifetimes (or at least the longevities of human institutions). Here we show that if haste is unimportant, sending messages inscribed on some material can be strikingly more energy efficient than communicating by electromagnetic waves. Because messages require protection from cosmic radiation and small messages could be difficult to find among the material clutter near a recipient, 'inscribed matter' is most effective for long archival messages (as opposed to potentially short "we exist" announcements). The results suggest that our initial contact with extraterrestrial civilizations may be more likely to occur through physical artefacts-essentially messages in a bottle-than via electromagnetic communication.     

Superconductivity in CaCuO2 as a result of field-effect doping.

Understanding the doping mechanisms in the simplest superconducting copper oxide-the infinite-layer compound ACuO2 (where A is an alkaline earth metal)-is an excellent way of investigating the pairing mechanism in high-transition-temperature (high-Tc) superconductors more generally. Gate-induced modulation of the carrier concentration to obtain superconductivity is a powerful means of achieving such understanding: it minimizes the effects of potential scattering by impurities, and of structural modifications arising from chemical dopants. Here we report the transport properties of thin films of the infinite-layer compound CaCuO2 using field-effect doping. At high hole- and electron-doping levels, superconductivity is induced in the nominally insulating material. Maximum values of Tc of 89 K and 34 K are observed respectively for hole- and electron-type doping of around 0.15 charge carriers per CuO2. We can explore the whole doping diagram of the CuO2 plane while changing only a single electric parameter, the gate voltage.     

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

Nanowires and nanotubes carry charge and excitons efficiently, and are therefore potentially ideal building blocks for nanoscale electronics and optoelectronics. Carbon nanotubes have already been exploited in devices such as field-effect and single-electron transistors, but the practical utility of nanotube components for building electronic circuits is limited, as it is not yet possible to selectively grow semiconducting or metallic nanotubes. Here we report the assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping. Gate-voltage-dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires function as nanoscale field-effect transistors, and can be assembled into crossed-wire p-n junctions that exhibit rectifying behaviour. Significantly, the p-n junctions emit light strongly and are perhaps the smallest light-emitting diodes that have yet been made. Finally, we show that electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.     

黄土地区隧道衬砌背后空洞对结构影响模拟分析

通过对黄土隧道现场调研,测试和资料收集,得到隧道衬砌背后空洞的大小、位置及混凝土衬砌的强度等参数,采用ANSYS软件建立数学模型对隧道衬砌背后有空洞部位进行模拟分析,通过有无空洞的对比,研究空洞大小及所处位置对隧道衬砌受力及变形的影响程度,找出空洞的临界大小及最不利位置.     

既有隧道改用城市轨道交通线路的线路设计与限界分析

针对既有隧道改建为城市轨道交通线路的具体实践，建立以线路平面和纵断面设计控制点为约束条件，改建量平方和最小为目标函数，采用拉格朗日乘子法进行优化设计的方法，初步确定线路位置；建立线路贯通性与限界适应性分析的指标体系，并以此为基础，编制限界自动分析软件，确定最佳的线路设计位置，从而解决了既有隧道工程改用作城市轨道交通线路时线路贯通性和限界适应性的分析问题.     

电子废弃物拆解业对周边土壤环境的影响——以台州路桥下谷岙村为例

选取电子废弃物拆解业比较发达的台州市路桥区下谷岙村为研究区域,对拆解场外土壤的污染状况进行了野外调查和实验分析研究.结果表明:(1)下谷岙村土壤中Cu、Pb的含量均有不同程度的超标;Zn、As、Cr、Mn、Ni的含量均处于国家标准范围内,但除了As、Cr以外,其余元素的含量均高于浙江省土壤背景值,说明土壤中重金属的含量呈明显增加趋势.(2)根据衰减模型,下谷岙村土壤中重金属元素的含量与距离呈现负相关.