Effect of Cu surface segregation on the exchange coupling field of NiFe/FeMn bilayers

The NiFe/FeMn bilayers with different buffer layers (Ta or Ta/Cu) were prepared by magnetron sputtering. Results show that the exchange coupling field of NiFe/FeMn films with Ta buffer is higher than that of the films with Ta/ Cu buffer. We analysed the reasons by investigating the crystallographic texture, surface roughness and surface segregation of both films, respectively. We found that the decrease of the exchange coupling fields of NiFe/FeMn films with Ta/ Cu buffer layers was mainly caused by the Cu surface segregation on NiFe surface.     

含酯基联接基的双子表面活性剂的合成及性能

合成了2种含酯基的双子季铵盐型表面活性剂N,N’—双十二烷基—N,N,N’,N’—四甲基—1,6己二酸—二乙醇胺酯—二溴化铵(DTAD)和N,N’—双十二烷基—N,N,N’,N’—四甲基—对苯二甲酸—二乙醇胺酯—二溴化铵(DTTD)。通过HNMR和元素分析表征了其结构和组成。测定了这2种表面活性剂的临界胶束浓度(cmc)、胶束解离度(α)、起泡性和稳泡性。实验结果表明:DTAD的cmcα大于DTTD,但起泡性和稳泡性较DTTD稍差。对比联接基的结构进行了初步探讨,发现联接基结构和长度对表面活性剂表面活性具有明显影响。     

Structure and magnetic properties of [FePt／Ag]10 multilayer films

[FePt/Ag]10 multilayers were deposited on glass substrates by magnetron sputtering. After being annealed at 550℃ for 30 rain, the coercivities of [FePt/Ag]10 multilayer films were observably improved. Magnetic properties of[FePt/Ag]10 multilayer films are influenced by the Ag content. The highest coercivity is obtained for those multilayer films that the Ag content is about 25%. The analysis for the remanence curves shows that the lower FePt layer thickness is favorable for decreasing the intergranular interaction. Result of XRD shows that a thick Ag layer can enhance the intensity of FePt(001) peak. A magnetic activation volume of the order of 10^-24 m^3 is obtained by the measurement of magnetic viscosity, showing that it is promising to be ultrahigh density recording media.     

沉积温度对TiN/SiN_x多层膜结构及力学性能的影响

采用反应磁控溅射方法,在不同沉积温度条件下制备了一系列多晶TiN/SiNx纳米多层膜,并用X射线衍射仪（XRD）、X射线反射仪（XRR）及纳米压痕仪（Nanoindenter）表征了材料的微观结构及力学性能。结果表明,沉积温度对多层膜的界面结构、择优取向及力学性能有显著影响：当沉积温度为室温时,多层膜的界面较高温条件下粗糙;而多层膜的择优取向在沉积温度为400℃时呈现强烈的TiN（200）织构;多层膜的硬度及弹性模量在室温至400℃温度范围内变化不大。     

Influence of Ag content on the microstructure,mechanical, and tribological properties of TaVN-Ag films

A series of TaVN-Ag nanocomposite films were deposited using a radio-frequency magnetron sputtering system. The microstructure, mechanical properties, and tribological performance of the films were investigated. The results showed that TaVN-Ag films were composed of face-centered cubic (fcc) TaVN and fcc-Ag. With increasing Ag content, the hardness of TaVN-Ag composite films first increased and then decreased rapidly. The maximum hardness value was 31.4 GPa. At room temperature, the coefficient of friction (COF) of TaVN-Ag films decreased from 0.76 to 0.60 with increasing Ag content from 0 to 7.93at%. For the TaVN-Ag films with 7.93at% Ag, COF first increased and then decreased rapidly from 0.60 at 25℃ to 0.35 at 600℃, whereas the wear rate of the film increased continuously from 3.91×10-7 to 19.1×10-7 mm3/(N·mm). The COF of the TaVN-Ag film with 7.93at% Ag was lower than that of the TaVN film, and their wear rates showed opposite trends with increasing temperature.     

Chemical states of the atoms in magnetic multilayersTa/NiOx/Ni81Fe19/Ta and Co/AlOx/Co

Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm.     

O和CO吸附对NixCu1-x(100)表面偏析的影响

应用计算机编程构造出了存在和不存在表面偏析的无序二元合金NixCu1-x(x=0.4)(100)表面的原子集团模型,然后按覆盖度θ=0.5,构造出了O和CO吸附后的原子集团模型,应用Recursion方法计算了O和CO在NixCu1-x无序二元合金(100)表面吸附的总结构能及Ni、Cu原子在表面的环境敏感镶嵌能.由此得出:1)O吸附在NixCu1-x(x=0.4)(100)表面比CO吸附在该表面更稳定;2)O和CO的吸附抑制了Cu在表面富集,且这种作用主要表现在表面一层.     

表面活性剂Bi对自旋阀多层膜交换耦合场的影响及其微结构分析

采用磁控溅射方法制备了Ta(10nm)/NiFe(8nm)/Cu(2.6nm)/NiFe(3.6nm)/FeMn(9nm)/Ta(10nm)自旋阀多层膜.在Cu/NiFe界面沉积适量厚度的Bi原子能够有效地提高交换耦合场,沉积过量的Bi原子会导致交换耦合场下降.X射线光电子能谱分析结果表明:沉积在Cu/NiFe界面的Bi原子可以有效地抑制Cu原子在NiFe层表面的偏聚;当沉积过量的Bi原子时,Bi原子会进一步迁移到FeMn中,形成杂质,从而破坏了FeMn的反铁磁性,使交换耦合场降低.     

Ag的掺杂量对Zn_(0.5)Cd_(0.5)S/Ag半导体材料光催化性能的影响

采用燃烧法制备了Zn0.5Cd0.5S/Ag半导体材料.利用X-射线粉末衍射仪(XRD),扫描电子显微镜(SEM),荧光分光光度计(PL)以及紫外-可见分光光度计(UV-vis)对所制备得到的样品进行了表征.研究了Ag的掺杂量对Zn0.5Cd0.5S/Ag半导体材料的结构、形貌、发光性能和光催化效果的影响.结果表明,Ag的掺杂量对样品的形貌基本没有影响,但是对样品的结构、发光性能以和光催化效果有着显著地影响.研究表明:随着Ag掺杂量的增加,半导体材料中出现了AgS杂相;另外,样品的发光强度逐渐降低;而当Ag的掺杂量为0.1时,所制备的Zn0.5Cd0.5S/Ag半导体材料对亚甲基蓝溶液(MB)的光催化效果最好.     

Ag层厚度对FePd薄膜的结构和磁性能的影响

采用磁控溅射的方法,在石英玻璃上制备了Agx/FePd(67.5nm)(x=3.875、7.75、15.50、31、38.75nm)和FePd(67.5nm)/Agx(x=7.75、15.50、31nm)薄膜,研究了Ag对600℃退火不同时间的FePd/Ag、Ag/FePd薄膜的影响.结果显示,无论Ag沉积在FePd薄膜顶层还是底层,Ag层的加入都能加快薄膜从面心立方(FCC)到面心四方(FCT)的相转变.Ag能极大增强FePd薄膜的矫顽力.比较Ag/FePd和FePd/Ag薄膜,Ag/FePd薄膜中的部分样品有沿某一方向优先生长的趋势,更利于实际应用.在Ag/FePd薄膜中晶粒易磁化轴平行面内,当顶层Ag厚度为31nm时,薄膜有很大的面内矫顽力2.8kOe和很小的垂直方向矫顽力1.04kOe.     

K,Cu,Rb,Ag和Cs原子第一离化势的相对论HFS计算

本文在相对论的Hartree-Fock-Slater(RHFS)近似中,考虑了原子中价电子和核实电子之间的极化效应,使用类似于“冻结核实”和“弛豫核实”近似的方法,对K,Cu,Rb,Ag和Cs原子的第一离化势分别进行了计算。计算结果与实验数据比较,偏差较小。     

Cu-Ag合金中析出相界面结构及其对合金性能的影响

采用真空感应熔炼法制备Cu-6%Ag和Cu-24%Ag,并进行退火和时效处理,观察了合金中析出相与基体的位向关系及界面结构,分析了析出相对合金强化和导电特性的影响. 析出相与Cu基体之间具有(100)Cu∥(100)Ag及〈110〉Cu∥〈110〉Ag位向关系,存在半共格界面,在(111)面上平均每隔9个晶面间距出现一个刃型位错以协调点阵错配. 析出相与Cu基体这种特定的位向关系及界面结构能有效地阻碍基体中位错的运动,在产生析出相强化作用的同时几乎不影响合金的电传导行为. 随Cu-6%Ag时效时间的延长,析出相数量增多,合金硬度显著上升而电阻率持续下降. 时效过程中析出相数量、形态及界面结构是导致合金力学和电学性能变化的主要原因.     

The effect of neodymium substitution on the structural and magnetic properties of nickel ferrite

Nickel ferrite Ni Fe2O4 is a typical soft magnetic ferrite with high electrical resistivity used as high frequency magnetic material. Neodymium(Nd3+) doped Ni Fe2O4 materials were fabricated using solid state reaction. The properties of the obtained material were investigated by X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM), Fourier-Transform Infrared Spectroscopy(FT-IR), magnetic measurements on SQUID and M?ssbauer spectroscopy. It was found that the material consists of two different phases: Nd3+doped Ni Fet2O4and Nd Fe O3. The Nd3 ions occupy cation sites of the Ni Fe2O4 inverse spinel structure. NdFeO3 phase occurred when the level of Nd3+atoms exceed a percolation limit.The presence of both phases was confirmed by SEM observations. The M?ssbauer spectra analysis showed two sextets, which can be ascribed to iron atoms in tetrahedral and octahedral positions. From their intensities it is concluded that Nd3+occupies octahedral sites in the spinel structure of Ni Fe2O4, which were originally occupied by Ni2+.     

衬底温度对CdTe/ZnTe多层薄膜制备的影响

采用射频磁控溅射法制备了CdTe/ZnTe多层薄膜,并在制备单层CdTe薄膜和ZnTe薄膜的基础上,研究了衬底温度对CdTe/ZnTe多层薄膜性质的影响;通过XRD和透过谱、吸收谱的分析,对其结构进行了研究.结果表明在185 ℃下制备的CdTe/ZnTe多层膜中,CdTe和ZnTe均沿（111）晶面择优取向生长,尤其是ZnTe沿（111）晶面择优取向明显,衍射强度极大. 通过比较不同衬底温度,发现185 ℃生长的样品衍射峰强度最高,成膜质量较好;通过吸收谱图分析,185 ℃下沉积的样品对光有较好的吸收性.     

Optimization of mechanical properties of Sn-3.8Ag-0.7Cu alloys by the additions of Bi,In and Ti

Bi, In and Ti were added to Sn-3.8Ag-0.7Cu (SAC387) solder alloy to optimize the mechanical performance. The alloying effects of Bi, In and Ti on the microstructure, thermal and mechanical properties of SAC387 based solder alloys were investigated. The results demonstrate that adding 3.5 ?wt % of Bi could refine the microstructure, optimize the thermal properties, and improve the tensile strength. Meanwhile, the ductility of the solder alloys reduced evidently. Adding 2.8 ?wt % of In into SAC387–3.5 ?wt %Bi alloy could increase both the strength and ductility, which is attributed to the beneficial effect of In addition, as adding In could improve the solubility of Bi in the β-Sn matrix. Meanwhile, the melting point was reduced, and the wettability improved with the addition of In. Introducing amounts of Ti into SAC387–3.5 ?wt % Bi-2.8 ?wt % In alloy could further increase the strength. However, the ductility was significantly reduced when 0.8 ?wt % of Ti was added due to the formation of the coarse Ti₂Sn₃ phase. The undercooling was remarkably reduced with the addition of Ti. The nanoindentation tests demonstrate that the hardness increased mainly due to the hardening effect of the Bi addition. Among all the samples prepared, alloy SAC387–3.5 ?wt % Bi exhibited the highest creep resistance at the ambient temperature. Further adding In and Ti into SAC387–3.5 ?wt % Bi alloys reduced the creep resistance of the solder alloys. The mechanism associated with the different mechanical responses is also discussed in this study.     

Effect of reactor pressure on the growth rate and structural properties of GaN films

The effect of reactor pressure on the growth rate, surface morphology and crystalline quality of GaN films grown on sapphire by metalorganic chemical vapor deposition is studied. The results show that as the reactor pressure increases from 2500 to 20000 Pa, the GaN surface becomes rough and the growth rate of GaN films decreases. The rough surface morphology is associated with the initial high temperature GaN islands, which are large with low density due to low adatom surface diffusion under high reactor pressure. These islands prolong the occurrence of 2D growth mode and decrease the growth rate of GaN film. Meanwhile, the large GaN islands with low density lead to the reduction of threading dislocation density during subsequent island growth and coalescence, and consequently decrease the full width at half maximum of X-ray rocking curve of the GaN film.     

巨厚松散层力学性质及其对地表下沉的影响

开采引起的地表下沉与上覆岩土层的性质与结构密切相关,巨厚松散层条件下开采下沉规律具有特殊性。采用土工试验、数值模拟等相结合的方法,对巨厚松散层的力学性质及其对地表下沉的影响进行了研究。通过三轴不固结不排水试验对焦作矿区地表黏性土的抗剪强度进行了研究,得到焦作矿区松散层土体的内摩擦角和内聚力范围。以巨厚松散层条件下某工作面为实例,结合三轴试验结果,研究了不同巨厚松散层厚度、松散层内摩擦角和内聚力对地表下沉的影响;并将数值模拟结果与实测结果进行了对比验证。结果表明:地表最大下沉值随松散层厚度的增加而增加,随着松散层内摩擦角、内聚力的增加而减小。将巨厚松散层力学性质土工试验结果与开采下沉结合起来,对开采下沉的研究具有一定的指导意义。     

Co—Al／Cu多层膜中层间耦合的振荡对光学性质和磁光效应的作用

用四探针法,纵向表面磁光效应,极克尔磁光谱仪和椭圆偏胱谱仪研究了离子束溅射法制备的「Ｃｏ９０Ａｌ１０（１．６ｎｍ）／Ｃｕ」３０多层膜中的层间耦合,磁光效应及光学性质。结果发现对于Ｃｏ－Ａｌ／Ｃｕ多层膜,其面内饱和场ＨＳ,矫顽力ＨＣ,磁电阻ΔＲ／Ｒ,特别是等效介电函数δ,磁光极克尔角θＫ分别随Ｃｕ层厚度的变化同步作周期性的振荡,其 ０．９ｍｍ。     

比表面积及孔径对花岗岩力学性质影响

为研究花岗岩内部结构对其物理力学性质的影响,利用氮吸附原理的比表面积及孔径分析仪测得两种花岗岩的比表面积和孔径分布情况,对比分析了两种花岗岩的密度、孔隙率等物理性质及单轴压缩强度,发现由比表面积和孔径表征的岩石孔隙结构更能合理的解释其宏观力学行为。试验结果表明:比表面积较大的岩样强度较低。比表面积较大的岩样加剧了岩样在加载过程中微裂隙的发育,使试样的力学性能降低;孔体积较大的岩样的强度较低。岩样内部孔隙的存在加剧了内部微裂隙的发育。随着轴向压力的不断加载,这些孔隙被压缩,有的成为了微裂隙发育的通道、有的成为新裂隙产生的起源。这些微裂隙不断延伸、扩张、贯通最终使得试样在压力的作用下破坏;利用排水法测得的孔隙率不能完整的反映岩样内部孔隙的发育状态,而通过氮吸附静态容量法测得的孔体积能够较为完整的反映岩样中孔隙的发育状态。比表面积及孔径分析测试更为准确地得到岩石内部的孔隙结构,测试结果对花岗岩的宏观力学行为做出了合理解释。