金刚石薄膜热敏器件特性

本文采用热丝ＣＶＤ方法和在以石英为衬底的金属钛梳状微电极上制备出的均匀致密、结晶完整的金刚石薄膜，制成了金刚石薄膜热敏器件．对其热敏特性的测试结果表明，该热敏元件具有检测温度范围宽、响应快、灵敏度高、性能稳定等优点．     

单源低能离子束辅助沉积类金刚石薄膜摩擦性能研究

采用单源低能离子束辅助沉积的方法，制备了非晶碳薄膜，分别用喇曼光谱，俄歇电子能谱了薄膜的结构，薄膜为无定形的类金刚石薄膜，薄膜中石墨键（ＳＰ＾２）所占的比重较大，沉积时随着离子束能量及束流的增加，薄膜的显微硬度，摩擦系数，摩擦寿命均增加，类金刚石薄膜具有较好的摩擦性能。     

离子束辅助沉积制备氮化钽薄膜

利用离子束辅助沉积（ＩＢＡＤ）技术制备ＴａＮ薄膜；掠入谢的Ｘ射线衍射和透射电镜观察结果显示，薄膜晶粒细小、结构致密，是面心立方结构。     

基底对类金刚石薄膜摩擦学性能的影响

为了研究不同基底对类金刚石薄膜摩擦磨损性能的影响,采用等离子体增强化学气相沉积方法在高速钢、SiC和304不锈钢基底上成功制备了类金刚石薄膜。采用SEM,TEM,Raman测试手段对膜层的微结构进行了表征:SEM表征结果显示膜层总厚度约为6.5μm,而且层与层之间有明显的界面;TEM表征结果显示沉积的膜层为无定型结构;Raman光谱分析显示沉积的薄膜存在明显的G峰和D峰,可以确定沉积的薄膜为类金刚石薄膜。摩擦测试结果显示,基底对类金刚石薄膜摩擦磨损性能具有显著影响,对于不同基底,钢球对偶上均存在明显的转移膜,高速钢基底的磨痕宽度最小,而且沉积在高速钢基底上的类金刚石薄膜具有最低的磨损率,摩擦系数约为0.1。采用Raman光谱对不同基底磨痕表面微结构进行了分析,认为高速钢基底具有最低磨损率可归因于其磨痕的石墨化程度低。研究可为制备具有优异摩擦磨损性能的类金钢石薄膜提供参考。     

采用磁过滤MEVVA源制备DLC膜的研究

采用磁过滤MEVVA沉积技术以石墨为阴极在几种衬底表面(单晶硅、不锈钢和工具钢等)上制备高质量类金刚石(DLC)薄膜.实验结果表明,沉积能量对薄膜的sp3键含量的影响为先随能量的增加而增加,达到最大值后,再增加沉积能量含量反而下降.硬度测试结果表明,非晶金刚石薄膜具有极高的硬度,为70～78GPa,远远高于衬底材料的硬度值.对非晶金刚石薄膜的摩擦性能试验结果表明,非晶金刚石薄膜的摩擦因数为0.16～0.2,大大低于衬底材料.     

化学气相沉积金刚石薄膜的表面过程

采用简单表面反应模式，对化学气相沉积金刚石薄膜的表面动力学过程进行了研究，得到了金刚石薄膜的沉积速率公式，揭示了影响薄膜生长的因素并由此讨论了金刚石薄膜生长的机制和规律。     

磁透镜技术及其在沉积金刚石/类金刚石薄膜中的应用

阐明了磁透镜原理，依照磁透镜理论和几何光学理论，给出一种确定磁透镜位置的方法。并将磁透镜技术应用到直流等离子射流化学沉积金刚石薄膜／类金刚石薄膜装置中，很好地消除了边界效应，实现高速大面积沉积高纯度金刚石薄膜／类金刚石薄膜的目标。     

用射频CVD法在石英玻璃上生长微晶金刚石薄膜

利用射频等离子体化学气相沉积法（ｒ，ｆ．ｐｃｖＤ），在石英玻璃上生长出透明均匀的薄膜，经过电子衍射，激光喇曼散射，可见光透过率等测试，证明是金刚石薄膜，通过透射电子显微镜看不到颗粒。     

声表面波器件金刚石薄膜基片的制备工艺

为制备高质量的声表面波器件,探索金刚石薄膜的沉积工艺,采用直流电弧等离子体喷射化学气相沉积技术和特殊的复合衬底技术,在单晶硅衬底上制备了大面积、高质量的金刚石薄膜,成功解决了单晶硅衬底在沉积金刚石薄膜过程中产生的变形问题.研究了甲烷浓度和沉积温度对金刚石薄膜质量的影响,优化了沉积工艺.结果表明,甲烷气体体积分数为1.8%时,晶粒最为细小,同时金刚石薄膜的表面粗糙度最小,表面最为光滑.衬底温度为1000℃时生长的金刚石薄膜的晶粒尺寸较小.     

浅论气体压强对金刚石薄膜质量的影响

以甲烷、氢气做为气源,利用微波等离子气相沉积的方法在硅片上沉积金刚石薄膜。研究了不同压强对金刚石薄膜质量的影响。结果表明当气氛压强为9KPa时可获得高质量的金刚石薄膜。     

不同靶材制备TaN单层薄膜的晶体结构与力学性能

以钽氮化物为个体层材料,利用FJL560CI2型超高真空射频磁控与离子束联合溅射系统,制备以TaN和金属Ta为靶材的两种TaN单层薄膜.通过XRD和纳米力学测试系统分析它们的晶体结构和TaN靶材对薄膜机械性能的影响.结果表明,TaN靶材制备的TaN单层膜的纳米硬度值普遍高于Ta靶材的;当工作气压为0.4 Pa时,TaN单层膜的硬度最大,即35.4 GPa,其结晶出现多元化,使单层膜的硬度、弹性模量以及膜基结合性能均达到最佳.     

TaN膜的结构,成分及性能

研究了三极溅射法制备的ＴａＮ膜的结构、成分及其性能。实验发现：随着氮分压的增加，ＴａＮ膜的结构将从面心立方相转变为六方相；ＴａＮ膜的显微硬度在单一相结构时最大，而以双相共存时的显微硬度较低。     

纳米多层膜的微结构与超硬效应

对所研究的8种纳米多层膜（TiN/NbN、TiN/TaN、TiN/TaWN、TiN/AlN、NbN/TaN、TiN/Si3N4、W/SiC和W/Mo）的晶体结构、调制结构、生长方式和界面结构类型以及它们的超硬度效应特征进行了总结和讨论。结果认为,界面共格应变或其他原因所导致的交变应力场对薄膜造成的强化作用是纳米多层膜产生超硬效应的主要原因之一。     

超硬刀具切削复合材料的实验研究

复合材料作为一种新型的工程材料 ,已在航空、航天等现代工业中得到广泛应用。超硬材料 (金刚石 ,立方氮化硼 )则是在 2 0世纪后期发展起来的新型刀具材料。文中阐述了复合材料和超硬刀具材料的种类、性能与制造方法。用超硬刀具对复合材料进行了切削试验 ,文中介绍了部分试验内容 ,并列出试验数据。实验研究表明 ,超硬刀具是加工复合材料最有效的刀具。PCD与 PCBN复合片及 CVD厚膜金刚石刀具能够有效地加工各种复合材料 ;但 CVD薄膜金刚石刀具只能加工纤维加强的复合材料。     

Spin dynamics characteristics of nitrogen vacancy spins in diamond films using enhanced Raman shift with spin microscopy

The diamond films were deposited on a Si substrate with chemical vapor deposition MCVD using methanehydrogen gas.Raman active phonon and sp~2/sp~3 ratio in diamond/Si(100)films were investigated by Raman spectra in the difference scattering configurations.Furthermore,the Raman scattering spectrum of diamond/Si(100)hetero-junction was measured with different thickness to investigate the spin dynamics of nitrogen vacancy spins.The Fluorescence scanning microscopy indicated that nitrogen vacancy center electron spin was coupled to the host nitrogen nuclear spin by the electron spin resonance.The strong peak of 1332 cm~(-1)displayed the F_(2g)symmetry of diamond,while the broad E_(2g)mode peak of 1550 cm~(-1)was a broad band G mode,and 1150 cm~(-1)peak corresponded to the nano-diamond and disordered graphitic carbon form with disordered SP~2 hybridization.The Raman spectra of the diamond films were observed as a function of the residual stress,crystal size and their orientation.The peaks of 1132 cm~(-1)and 1480 cm~(-1)were associated with hydrogen bonding.The transport of diamond exhibited sp~3 spin related effect.The diamond/Si(100)PDOS is the results of spin-related couple of sp~3,p and d orbital hybridization.The spin dynamics was achieved by the orbital competition,strong crystal field and charge order.     

Fabrication and thermal stability of Ni-P coated diamond powder using electroless plating

Ni-P coated diamond powder was fabricated successfully by using electroless plating. Effects of active solutions, plating time, reaction temperature, and the components of the plating bath on the Ni-P coating were investigated systematically. Moreover, a study on the thermal stability of Ni-P coated diamond under various atmospheres was performed. The results indicate that Pd atoms absorbed on the diamond surface as active sites can consequently enhance the deposition rate of Ni effectively. The optimized plating bath and reaction conditions improve both the plating speed and the coverage rate of Ni-P electroless plating on the diamond surface. Compared to the diamond substrate, the diamond coated with Ni-P films exhibits very high thermal stability and can be processed up to 900℃ in air and 1300℃ in protective atmosphere such as H₂.     

CH4／CO2体系化学气相淀积金刚石的非平衡定态相图计算

用非平衡热力学耦合模型首次获得了由ＣＨ４／ＣＯ２体系化学气相淀积金刚石的相图。该相图与用经典平衡热力学得 结果不同,相图中出现了１个金刚石的生长区,相图中的金刚石生长区是实现金刚石气相生长的热力学基础,它的存在体现了超平衡氢原子等激活粒子对石墨的激活和对金刚石的稳定作用。     

金刚石颗粒表面镀铜层的控制氧化

为了改善熔融玻璃对金刚石颗粒的润湿,需要对镀铜金刚石颗粒在一定气氛下进行控制氧化,从而在其表面获得一定厚度的Cu2O层.通过对金刚石颗粒表面镀铜层氧化的热力学计算,确定了在650℃、露点温度为20℃的N2/H2O二元混合气氛中进行氧化.氧化的动力学研究表明,在此条件下金刚石颗粒表面镀铜层的氧化符合抛物线规律,其抛物线速度常数为1.127 5×10-12g2.cm-4.min-1.在动力学研究的基础上,本实验选择氧化时间为40 min.XRD实验结果表明,氧化后的金刚石颗粒表面只有Cu和Cu2O,未生成CuO.     

微波等离子体CVD方法制备金刚石薄膜

采用微波等离子体化学气相沉积方法分别在CH4／H2，CO／H2和（CH4＋CO）／H2气体体系下合成了金刚石薄膜．结果表明，所合成的金刚石薄膜具有明显的柱状生长特性和较高的品质，（CH4＋CO）／H2体系合成的金刚石薄膜具有较高的生长速率和（100）晶面定向生长的特性．     

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV-centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N₂ incorporation and the high mobility of vacancies under growth temperatures of 950-1000℃. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.