霜晶生长的界面演变及机制分析

为了认识冷面结霜的微观机制,对霜晶生长过程中的各种界面演变现象进行了研究。从晶体生长角度解释了各种形状初始霜晶的形成机制;利用界面稳定性理论分析指出:温度场和水蒸气浓度场是影响霜晶生长的主要因素,两者的竞争耦合作用是产生相变和霜晶各种界面演变现象的根本原因;建立了霜晶生长速率与霜晶表面温度及水蒸气分压力相关的数学模型。计算结果表明:随着霜晶温度的降低或环境空气水蒸气分压力的增加,霜晶生长速率增大,这与实验以及基于分子运动论的分析结论是一致的。     

霜晶生长的界面演变及机理分析

为了认识冷面结霜的微观机理,对霜晶生长过程中的各种界面演变现象进行了研究。从晶体生长角度解释了各种形状初始霜晶的形成机制;利用界面稳定性理论分析指出:温度场和水蒸气浓度场是影响霜晶生长的主要因素,两者的竞争耦合作用是产生相变和霜晶各种界面演变现象的根本原因;建立了霜晶生长速率与霜晶表面温度及水蒸气分压力相关的数学模型。计算结果表明:随着霜晶温度的降低或环境空气水蒸气分压力的增加,霜晶生长速率增大,这与实验以及基于分子运动论的分析结论是一致的。     

Effect of frequency and intensity of rotating magneticfield on the microstructures of Pb-Sn alloys

The solidification microstructures of Pb-45% Sn hypoeutectic and Pb-85%Sn hypereutectic alloys were studied in rotating magnetic field （RMF）. A transition of primary phase from dendrite to spherical growth was caused by the RMF, which simultaneously fractured and fined grains. The fracture and refinement increased first and then decreased with the increase in RMF intensity. When magnetic intensity exceeded a critical value, the size of the primary phase became bigger on the contrary. Therefore, there existed an optimum value of magnetic intensity in fracture and refinement of grain. Moreover, the rotating frequency determined the skin depth of magnetic field, and further affected the homogenization of temperature and solute. The rotating frequency and magnetic intensity were key factors affecting refinement and uniformity of solidification microstructures. The introduction of RMF not only changed the solidification thermodynamics, but also led to a reduction in Gibbs free energy associated with the formation of critical crystal nucleus and atom diffusion activation energy, thus enhancing the rate of nucleation.     

用凝胶法生长KClO4晶体

凝胶法是生长KClO4晶体最合适的方法．实验研究了反应物浓度、凝胶密度、温度、凝胶pH值对KClO4晶体成核数目、大小、形状及质量的影响，得出了生长较大尺寸、完整性好、高质量的KClO4晶体的最佳条件和参数．第一次对KClO4晶体形态、各晶面的显露程度进行定量分析，实验与理论分析相符合．证实了Hartman和Perdok的PBC理论．研究结果为下一步进行晶体生长机理研究打下了基础．     

液相沉淀法制备微粉氢氧化铝动力学分析

应用响应曲面法(RSM)和结晶宏观动力学对液相沉淀法制备微粉氢氧化铝过程进行了分析.响应曲面法研究表明:影响中位径的最主要因素为反应温度，其次依次为反应时间、分散剂的量和溶液的pH值；影响分形维数的最主要因素为分散剂的量，其次依次为溶液的pH值、反应温度和反应时间.结晶宏观动力学的研究表明:硫酸铝与氨水反应过程分为晶核生长期和晶粒长大期两个阶段；两个阶段的宏观结晶动力学方程均符合二级反应速率方程，表观活化能分别为051和127kJ/mol.晶体生长机制研究表明，扩散控制机制是氢氧化铝晶核生长和晶粒长大的主导机制.     

Sm^3＋：NaY（WO4）2激光拉曼晶体的生长与性能表征

采用提拉法（CZ法）生长出了Sm^3＋：NaY（WO4）2（简称Sm^3＋：NYW）单晶,给出晶体的较佳生长工艺：晶体沿[100]生长,转速为15-20r／min,提拉速度为1．0-2．0mm／h,分五个程序退火。TG—DTA分析得到晶体的熔点为1203℃。通过等离子体发射光谱仪检测晶体中稀土元素Sm^3＋的含量。另外,测量了室温下250--2000nm范围内的吸收和透过光谱以及在405nm激发下的上转换荧光发射谱。结果表明：Sm^3＋ NYW晶体具有易于生长、分凝系数高、吸收峰强、吸收带宽等优点,在LD泵浦的激光器中将具有较好的应用前景。     

生物组织冻结相变过程的数值模拟

建立了生物组织(含正常生物组织和肿瘤)冻结过程的传热模型.生物组织作为一种多孔介质,其相变发生在一个温度范围内,且存在一个固相与液相共存的糊状过渡区.采用显热容法模拟了生物组织冻结过程中的传热和冰晶增长过程.模拟结果显示,在冻结过程中,冷刀的初始温度越低,冷刀的降温速率越快,生物组织内温度下降和冰晶增长的速率越快.结果还表明组织中液相流动会增加生物组织内传热和冰晶生长的速度.计算结果为冷刀设计和冷冻外科手术提供了理论依据.     

旋转电磁搅拌时机对GCr15轴承钢凝固组织的影响

通过石墨型铸造研究了旋转电磁搅拌时机对GCr15轴承钢凝固组织的影响.结果表明:在钢液凝固过程的不同时间段施加电磁搅拌,对轴承钢的凝固组织具有显著影响,越早施加电磁搅拌,磁泰勒数(表征磁场作用下强制流动的无量纲数)越大,钢液所受的电磁力越大,越有利于柱状晶向等轴晶转变;在0~05min时间段施加电磁搅拌,铸锭等轴晶率提高了52%.此外,电磁搅拌引起的钢液对流推动了凝固前沿枝晶的折断、熔断和游离,枝晶碎片在强烈对流作用下增殖并被带到熔体心部成为异质核心,凝固前沿的温度梯度减小,成分过冷增大,促进了柱状晶向等轴晶转变.     

Selectivity of Crystal Growth Direction in Layered Double Hydroxides

Investigation of selectivity of crystal growth direction in layered double hydroxides is helpful to control their particle sizes in different directions. Mg-AI layered double hydroxides (LDHs) were synthesized using a coprecipitation method. The influences of aging temperature, aging time, and Mg/AI molar ratio on the crystal structure, the LDHs particle size, and the selectivity of crystal growth in different directions wereinvestigated. The results show that the size of the crystallites in the a direction is larger than that in the c direction for all experimental conditions, indicating faster crystal growth in the a direction than in the c direction. The crystallite sizes in the a and c directions both increase with decreasing Mg/AI molar ratio but with less difference between the sizes in the two directions. Therefore, the crystal growth rate in the c direction increases more than that in the a direction as the Mg/AI molar ratio decreases. The influence of the aging time, aging temperature, and Mg/AI molar ratio on the selectivity of the crystal growth direction can be used to prepare LDHs with selected sizes in the a and c directions.     

用于空间半导体区熔生长仿真系统的数学模型

本文提出一个晶体区熔生长的数学模型,可以根据炉管上十个热电偶的温度值计算出试样中的温场,再进一步计算出熔区位置、熔区宽度、生长界面的形状、生长速率和生长界面处的温度梯度等.材料科学家根据上述参数,可实时监控晶体的生长.