High critical currents in iron-clad superconducting MgB2 wires

Technically useful bulk superconductors must have high transport critical current densities, Jc, at operating temperatures. They also require a normal metal cladding to provide parallel electrical conduction, thermal stabilization, and mechanical protection of the generally brittle superconductor cores. The recent discovery of superconductivity at 39 K in magnesium diboride (MgB2) presents a new possibility for significant bulk applications, but many critical issues relevant for practical wires remain unresolved. In particular, MgB2 is mechanically hard and brittle and therefore not amenable to drawing into the desired fine-wire geometry. Even the synthesis of moderately dense, bulk MgB2 attaining 39 K superconductivity is a challenge because of the volatility and reactivity of magnesium. Here we report the successful fabrication of dense, metal-clad superconducting MgB2 wires, and demonstrate a transport Jc in excess of 85,000 A cm-2 at 4.2 K. Our iron-clad fabrication technique takes place at ambient pressure, yet produces dense MgB2 with little loss of stoichiometry. While searching for a suitable cladding material, we found that other materials dramatically reduced the critical current, showing that although MgB2 itself does not show the 'weak-link' effect characteristic of the high-Tc superconductors, contamination does result in weak-link-like behaviour.     

Enhancement of the high-magnetic-field critical current density of superconducting MgB2 by proton irradiation

Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially attractive for technological applications in the temperature range 20-30 K. But in the bulk material, the critical current density (Jc) drops rapidly with increasing magnetic field strength. The magnitude and field dependence of the critical current are related to the presence of structural defects that can 'pin' the quantized magnetic vortices that permeate the material, and a lack of natural defects in MgB2 may be responsible for the rapid decline of Jc with increasing field strength. Here we show that modest levels of atomic disorder induced by proton irradiation enhance the pinning of vortices, thereby significantly increasing Jc at high field strengths. We anticipate that either chemical doping or mechanical processing should generate similar levels of disorder, and so achieve performance that is technologically attractive in an economically viable way.     

超高载流能力的干净极限MgB2薄膜与超高上临界场的碳掺杂MgB2薄膜

本本文报道了基于混合物理化学气相沉积方法制备高质量干净极限MgB2薄膜和碳掺杂MgB2薄膜的最新结果.c轴外延干净的MgB2薄膜具有高达41.4K的超导转变温度,低于0.3μΩcm的正常态剩余电阻率.样品处于干净极限.薄膜表面RMS粗糙度小于5nm,在150nm宽的纳桥上测量到了大于1×108A/cm2的临界电流密度,接近MgB2,材料理论上的拆对电流密度,同样的结果也从对相同样品的磁性测量中推导得到.利用甲烷作为碳源,基于改进的热丝辅助混合物理化学气相沉积装置,高性能碳掺杂MgB2薄膜得以成功实现.不同程度的碳掺杂调制了MgB2双能带的带内和带间散射,进而明显增强了薄膜的上临界场.在重碳掺杂MgB2薄膜样品中,平行于样品表面的上临界场分量,Hc2//ab在临界温度(27K)附近对温度的斜率,-dHc2//ab/dT达到了3 T/K,暗示了样品具有非常高的上临界场Hc2//ab(0).碳掺杂同时使得样品的磁通钉扎能力得到很大增强.高场下具有比干净样品高出数个量级的临界电流密度,和更高的不可逆场.     

High critical current density in powder-in-tube processed MgB2/Ta/Cu wire

The magnetization of dense MgB2/Ta/Cu wires prepared by the powder-in-tube method is measured by a SQUID magnetometer. The results indicate that the critical temperature of MgB2/Ta/Cu is around 38.4 K with a sharp transition width of 0.6 K. The MgB2/Ta/Cu wire shows a strong flux pinning and the critical current density is higher than 105 A/cm2 (5 K, self-field) and 104 A/cm2 (20 K, 1 T). Also, the irreversibility field of the sample reaches 6.6 T at 5 K.     

High critical current density in powder-in-tube processed MgB2/Ta/Cu wire

The magnetization of dense MgB₂/Ta/Cu wires prepared by the powder-in-tube method is measured by a SQUID magnetometer. The results indicate that the critical temperature of MgB₂/Ta/Cu is around 38.4 K with a sharp transition width of 0.6 K. The MgB₂/Ta/Cu wire shows a strong flux pinning and the critical current density is higher than 10⁵ A/cm² (5 K, self-field) and 10⁴ A/cm² (20 K, 1 T). Also, the irreversibility field of the sample reaches 6.6 T at 5 K.     

Fabrication of MgB_2 superconducting films by different methods

MgB2 superconducting films have been successfully fabricated on single crystal MgO(111) and c-AL2O3 substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transition temperature of 38.4 K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with the zero resistance transition temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density Jc of 107 A/cm2 at 15 K in zero field for the thin film and of 105 A/cm2 for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100μΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO.     

The origin of multiple superconducting gaps in MgB2

Magnesium diboride, MgB2, has the highest transition temperature (T(c) = 39 K) of the known metallic superconductors. Whether the anomalously high T(c) can be described within the conventional BCS (Bardeen-Cooper-Schrieffer) framework has been debated. The key to understanding superconductivity lies with the 'superconducting energy gap' associated with the formation of the superconducting pairs. Recently, the existence of two kinds of superconducting gaps in MgB2 has been suggested by several experiments; this is in contrast to both conventional and high-T(c) superconductors. A clear demonstration of two gaps has not yet been made because the previous experiments lacked the ability to resolve the momentum of the superconducting electrons. Here we report direct experimental evidence for the two-band superconductivity in MgB2, by separately observing the superconducting gaps of the sigma and pi bands (as well as a surface band). The gaps have distinctly different sizes, which unambiguously establishes MgB2 as a two-gap superconductor.     

Vortex dynamics in superconducting MgB2 and prospects for applications

The recently discovered superconductor magnesium diboride, MgB2, has a transition temperature, Tc, approaching 40 K, placing it intermediate between the families of low- and high-temperature superconductors. In practical applications, superconductors are permeated by quantized vortices of magnetic flux. When a supercurrent flows, there is dissipation of energy unless these vortices are 'pinned' in some way, and so inhibited from moving under the influence of the Lorentz force. Such vortex motion ultimately determines the critical current density, Jc, which the superconductor can support. Vortex behaviour has proved to be more complicated in high-temperature superconductors than in low-temperature superconductors and, although this has stimulated extensive theoretical and experimental research, it has also impeded applications. Here we describe the vortex behaviour in MgB2, as reflected in Jc and in the vortex creep rate, S, the latter being a measure of how fast the 'persistent' supercurrents decay. Our results show that naturally occurring grain boundaries are highly transparent to supercurrents, a desirable property which contrasts with the behaviour of the high-temperature superconductors. On the other hand, we observe a steep, practically deleterious decline in Jc with increasing magnetic field, which is likely to reflect the high degree of crystalline perfection in our samples, and hence a low vortex pinning energy.     

高温超导薄膜的原子尺度制备和表征

高温超导体因其丰富的物理性质和潜在的应用价值已成为30余年来凝聚态物理学备受关注的前沿方向之一.探索和发现新型高温超导体并以此建立非常规高温超导电性的物理机制是超导物理学家们长期追求的目标.本文从高温超导体的研究现状和瓶颈出发,介绍基于异质外延薄膜高温超导电性的原子尺度研究,阐述近年来分子束外延技术在高温超导薄膜制备和量子调控方面取得的研究进展.在外延薄膜超导特性表征方面,着重介绍基于原位扫描隧道显微镜对超导层的原子尺度研究.在新型高温超导体探索方面,主要介绍基于异质外延薄膜界面超导体系的构筑.本文侧重于展示实验设计思路、研究方法以及对高温超导电性微观机制的理解,力图以此启发相关领域的研究人员.     

TBCCO/LAO高温超导薄膜的电阻转变和各向异性

将Tl2Ba2CaCu2O8(TBCCO)高温超导薄膜通过磁控溅射的方法沉积到LaAlO3(LAO)衬底上,SEM和XRD的测量结果显示该超导薄膜具有很高的成膜品质.通过标准四引线方法对TBCCO/LAO高温超导薄膜在不同磁场下的电阻转变进行了研究.结果表明:在一定的磁场下TBCCO/LAO超导薄膜具有很强的电阻转变展宽现象,并且当磁场垂直于超导薄膜表面时该超导薄膜显示出更强的电阻转变展宽现象.用热激活辅助磁通流动理论对该超导薄膜的电阻转变展宽现象进行了解释,同时通过分析超导薄膜的电阻转变对该超导薄膜的各向异性进行了讨论.     

YBCO/LAO和YBCO/MgO超导薄膜的微波性质

利用微带谐振技术研究了YBa2Cu3O7/LaAlO3 (YBCO/LAO)和YBa2Cu3O7/MgO (YBCO/MgO)超导薄膜的微波响应.通过测量微带谐振器的共振频率、有载品质因数、插入损耗与温度之间的依赖关系,分析了超导薄膜的微波特性,获得了超导薄膜在绝对零度时的穿透深度λ0.对于YBCO/LAO,λ0=265nm;对于YBCO/MgO,λ0=280nm.本文还利用微带谐振器研究了YBCO/LAO和YBCO/MgO超导薄膜的微波表面电阻.     

Strongly linked current flow in polycrystalline forms of the superconductor MgB2

The discovery of superconductivity at 39 K in magnesium diboride, MgB2, raises many issues, a critical one being whether this material resembles a high-temperature copper oxide superconductor or a low-temperature metallic superconductor in terms of its behaviour in strong magnetic fields. Although the copper oxides exhibit very high transition temperatures, their in-field performance is compromized by their large anisotropy, the result of which is to restrict high bulk current densities to a region much less than the full magnetic-field-temperature (H-T) space over which superconductivity is found. Moreover, the weak coupling across grain boundaries makes transport current densities in untextured polycrystalline samples low and strongly sensitive to magnetic field. Here we report that, despite the multiphase, untextured, microscale, subdivided nature of our MgB2 samples, supercurrents flow throughout the material without exhibiting strong sensitivity to weak magnetic fields. Our combined magnetization, magneto-optical, microscopy and X-ray investigations show that the supercurrent density is mostly determined by flux pinning, rather than by the grain boundary connectivity. Our results therefore suggest that this new superconductor class is not compromized by weak-link problems, a conclusion of significance for practical applications if higher temperature analogues of this compound can be discovered.     

PbTiO3多晶及薄膜材料强电场下的电热效应研究

基于Landau-Devonshire的热动力学模型,计算了PbTiO3块体及薄膜材料在铁电相变附近的电热效应。PbTiO3块体在769 K出现了一级铁电-顺电转变。700 K时其矫顽场为25MV·m-1。强的电场使得PbTiO3块体材料的一级相变逐渐转变为二级连续相变,且相变在更高的温度发生。PbTiO3薄膜材料的相变为二级相变,熵值减小,而熵变也相应减少。随着电场的增强,两者的比热容减小,但对应的温度向高温方向移动,2者的熵值却随着电场的增大而增强。对于PbTiO3薄膜来说,随着面内错配度的变化,张应力使相变温度降低,而压应力则相反。计算了PbTiO3块体与薄膜材料的绝热温变与制冷热容,其中块体的绝热温变ΔTad与制冷热容RC最大,分别为4.76 K与94.1 kJm-2K-1。     

p-Si TFT的电场增强MILC制备技术

采用电场增强金属诱导侧向晶化方法获得了结晶良好的多晶硅薄膜,并采用该工艺制备了p沟道薄膜晶体管器件,其迁移率为65cm2/(V·s),开关态电流比为5×106.采用拉曼光谱分析、X射线衍射、扫描电镜等微观分析手段对多晶硅薄膜进行了分析,结果表明加电场于两电极之间有促进多晶硅薄膜晶化的作用.采用EFE-MILC技术获得了大的晶粒尺寸,并用此技术制备了p沟多晶硅TFT.表明EFE-MILC技术是在低温下获得大晶粒尺寸p-Si薄膜和高性能p-SiTFT的好方法.     

Photoluminescence from Ge-SiO2 thin films and its mechanism

Ge-SiO₂ thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO₂ composite target. Films were annealed in N₂ ambience for 30 min at 300℃—1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃—1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of nc-Ge. The peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO₂ matrix.     

外电场下热脉冲法测量聚丙烯薄膜中空间电荷

在传统热脉冲法基础上改进测量回路,实现热脉冲法在外加电场下对固体薄膜电介质中空间电荷分布的测量,在此基础上,提出了数据校正的简便方法.以商用电容器聚丙烯薄膜为例,介绍在外加电场下测量聚丙烯薄膜内部空间电荷分布随时间的变化,展示了空间电荷在聚丙烯薄膜中动态的变化趋势.通过比较不同温度情况下聚丙烯薄膜内部电场分布,分析影响空间电荷积累的两个主要因素：温度、时间,说明在外加电场下热脉冲法测量聚丙烯薄膜内部空间电荷分布简明快速有效.     

Preparation of InSb nanocrystals embedded in SiO2 thin films

InSb nanocrystals embedded in SiO₂ thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO₂ matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t_1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films.     

电沉积和硒化制备CuInSe2薄膜

以石墨为阳极、钛片为阴极,采用恒电流法制备Cu-In预制膜,然后硒化处理得到CuInSe2薄膜.分析了预制膜和CuInSe2薄膜的相组成及其影响因素.结果表明:采用不同的电沉积工艺,可以得到不同相组成的Cu-In预制膜.在保证Cu/In小于1的条件下,降低InCl3浓度和H3Cit/CuCl2浓度比,选择较高电流,可以获得具有CuIn相和Cu2In相的Cu-In预制膜.含有CuIn相和Cu2In相的Cu-In预制膜,经硒化得到的CuInSe2薄膜具有单一CuInSe2相组成,并且符合化学剂量比要求;而只含有CuIn相的预制膜硒化后除了有CuInSe2相外还出现了CuSe相.     

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

Pure cobalt (Co) thin films were fabricated by direct current magnetron sputtering, and the effects of sputtering power and pressure on the microstructure and electromagnetic properties of the films were investigated. As the sputtering power increases from 15 to60 W, the Co thin films transition from an amorphous to a polycrystalline state, accompanied by an increase in the intercrystal pore width.Simultaneously, the resistivity decreases from 276 to 99μΩ·cm, coercivity increases from 162 to 293...