一步法电沉积钯铜二元金属纳米管(英文)

由钯和铜纳米颗粒组成得二元金属纳米管通过电沉积的方法在氧化铝模板中被制备出来.金属离子的扩散和沉积过程的竞争决定了最终的产物是纳米管或者是纳米线.在较高负电位下,其生长受扩散控制,金属离子在纳米管的边缘被消耗,形成的是纳米管结构.而在较低的负电位时形成的是纳米线.在硝酸根离子的电催化实验中,相比于薄膜,纳米管的催化性能受氢气析出的影响较小.在空气中放置6个月后,二元金属纳米管被氧化成均一相的氧化物纳米管.     

羽毛状硼纳米线并联结及其高定向列阵

利用射频磁控溅射方法, 首次合成了具有单侧羽毛状的多级并联结硼纳米线. 硼纳米线分枝在主干的同一个侧面形核和生长, 形成并联的Y型或是T型纳米结, 主干的直径在60~80 nm, 而分枝的直径在20~40 nm. 分枝和分枝之间、主干和主干之间、分枝和主干之间, 全部自组织成排列规则、高度取向的列阵, 在羽毛状硼纳米线的形成和自取向过程中, 没有涉及到任何的模板和触媒. 我们相信通过优化实验条件和改变靶的成分等, 采用同样的方法可以制备一系列的不同纳米线或是纳米管之间的异质结.     

无电化学沉积法合成铜纳米线

采用无电化学沉积法制备铜纳米线,与电化学沉积法不同,无电化学沉积法不需要在通孔模板的一面溅射一层导电金膜作为阴极,以及持续供给电力才能完成纳米线的合成.考察沉积时间、敏化液等因素对铜纳米线制备的影响.使用扫描电子显微镜(SEM),X射线衍射(XRD)对样品其进行检测,结果表明,无电化学沉积法首先形成纳米粒子,随着沉积时间的延长,纳米粒子逐渐融合形成纳米管、纳米线.制备的铜纳米线为多晶态结构.在没有模板限制的情况下,铜原子自催化生长形成类似于花瓣的结构.用95%乙醇代替水配制的敏化液性质较稳定,但是,与以水配制的敏化液相比,在大约相同的沉积时间条件下较不易形成纳米线.     

YbMn_xO_y纳米结构的可控制备及光催化性能研究

在阳极氧化铝(AAO)模板中,利用负压抽滤及化学共沉淀法,可控合成了YbMn_xO_y纳米管和纳米线阵列结构。其形貌和结构分别用扫描电子显微镜(SEM)、透射电子显微镜(TEM),选区电子衍射(SAED)和X射线衍射(XRD)表征。结果表明:上述纳米线和纳米管阵列形貌均一,为非晶结构。Yb~(3+)因具有丰富的4f轨道电子构型,Mn~(2+)可与其f轨道形成络合物,使YbMn_xO_y纳米管和纳米线阵列拥有良好的光催化性能。YbMn_xO_y纳米管独特管状结构和较大的比表面积使其对刚果红水溶液的光催化降解效率高于YbMn_xO_y纳米线,且催化剂重复使用4次后催化效果仍较好。     

K_(0.5)Na_(0.5)NbO_3纳米管阵列的制备及其电学性能研究

以乙醇铌、乙酸钾和乙酸钠为原料,乙二醇甲醚为溶剂,采用溶胶-凝胶(Sol-Gel)氧化铝(AAO)模板法制备K0.5Na0.5NbO3(KNN)纳米管阵列,并采用X射线衍射、扫描电子显微镜和透射电子显微镜表征KNN纳米管的物相、形貌和微观结构.研究表明,在700℃退火处理可获得结晶性较好,具有单斜钙钛矿结构的KNN多晶纳米管阵列.单根纳米管的外径约为200 nm,管壁厚约为20 nm.采用压电力显微镜(PFM)对单根KNN纳米管的压电性能进行表征,结果显示所制备的KNN纳米管具有明显的压电性能.     

自牺牲模板法合成Mn_2O_3纳米管

文章以-βMnO2纳米管作为自牺牲模板,在空气中550°C煅烧90 min,首次合成了立方相Mn2O3(c-Mn2O3)纳米管。用X-射线衍射、透射电子显微镜、选区电子衍射、场发射扫描电子显微镜及高分辨透射电子显微镜等对所制备的样品进行表征。结果表明,所制备样品为纯相的单晶c-Mn2O3,直径为200~500 nm,长度可达几微米。     

高取向硼纳米线列阵

一维纳米材料(纳米线和纳米管)是能有效传输电子和各种激子的最小维数结构, 因此是构筑纳米电子和纳米机械器件的基本组元. 采用射频磁控溅射方法, 以Ar气为溅射气体, 纯硼粉和氧化硼粉为靶材, 合成了直径在20~80 nm的硼纳米线, 这些硼纳米线在基片上自组织成垂直生长的高取向列阵, 具有大面积、高密度而离散、均匀性好、平行排列、高定向生长的特点. 它的独特特点是具有平台式顶部形貌, 详细的结构和成分研究表明硼纳米线具有非晶结构. 在合成硼纳米线及其高取向列阵的过程中, 没有涉及到任何的模板和金属触媒. 相信硼纳米线——一维纳米材料系统中的新成员, 会具有很多新奇、有趣、有用的独特性能. 提出了一种汽-团簇-固(VCS)机制来解释硼纳米线的形成.     

ZnS和C60纳米线阵列的构筑和表征

以多孔氧化铝为模板,通过水热反应制备出ZnS 和 C₆₀纳米线阵列,分别用透射电子显微镜(TEM)、扫描电子显微镜(SEM)、X射线衍射(XRD)、拉曼光谱以及选区电子衍射图谱(SAED)等,对纳米线阵列形貌和化学成分进行表征.结果表明,ZnS 和C₆₀纳米线均为有序阵列.ZnS纳米线为多晶结构,在波长332 nm紫外光激发下, 发射519 nm特征荧光.同时介绍了水热条件下,在多孔氧化铝模板中填充目的产物,以及制备纳米线有序阵列的相关过程.该方法具有一定的普适性.     

聚酰亚胺纳米线阵列的制备及浸润机理研究

采用聚合物溶液浸润模板的物理方法,以聚酰胺酸溶液为前驱体,氧化铝膜为模板,制备了聚酰亚胺纳米线阵列,并用扫描电镜对纳米线阵列形貌进行表征.通过测量纳米线阵列的高度来表征聚合物溶液在纳米管中的流动距离,结果表明聚合物溶液在纳米尺度上的流动行为符合Lucas-Washburn方程.并探讨了聚合物溶液浓度对浸润机理及纳米结构形成的影响,有助于更好地控制模板中形成的纳米阵列结构.     

反应参数对氢氧化钇纳米管合成的影响

通过简单的、低耗的水热合成方法,以Y2O3为原料,在无模板条件下大规模地制备了氢氧化钇纳米管,采用X射线粉末衍射(XRD)、扫描电镜(SEM)和能谱(EDS)测试技术对合成产物进行了物相、形貌和成分的表征.氢氧化钇纳米管内径为200～300nm,外径为400～500nm,壁厚为100～200nm,分散性好.研究了几种关键因素对氢氧化钇纳米管合成的影响.结果表明:水热法制备氢氧化钇纳米管材料的最佳合成条件是乙醇和水的体积比为1∶2;采用氢氧化钠溶液调节反应体系pH值为11~12;反应温度为220℃、反应时间为24h.     

Single-crystal gallium nitride nanotubes

Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure. There are reports of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum. The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems.     

超声化学法硒纳米晶体的可控制备

超声化学法,制备Se纳米棒（线）,产物由x-射线衍射仪、扫描电镜进行了表征.讨论了反应的浓度、时间对纳米晶形状的影响.实验证明,Se纳米晶的直径随着反应浓度的增加而增大,Se纳米晶的长度随着反应的时间延长而增大.     

锐钛矿TiO2纳米线的贮锂性能研究

采用水热法制备了TiO2纳米线．测试表明,该纳米线为锐钛矿相,直径为40～80nm,长度为300～1500nm,电化学贮锂可逆容量高、循环稳定性好,显著优于同相纳米晶．     

Synthesis of CdS nanowires on Cd foil and their photoluminescence properties

Cadmium sulfide(CdS) nanowires were synthesized on Cd foil via a simple solvothermal reaction at 180 ℃ using thiosemicarbazide as the sulfide source and ethylenediamine as the solvent.The CdS nanowires are hexagonal-phase single crystals with an average diameter of 50 nm and length of several microns.The as-prepared CdS nanowires show an absorption peak of around 483 nm in the absorption spectrum.The CdS nanowires exhibit bright photoluminescence(PL) with two distinct emission bands at 503 nm and 697 nm,which shows that the as-prepared CdS nanowires are high-quality nanocrystals.     

钛酸钠纳米线的合成和结构

利用TiO₂粉末和NaOH水溶液在175℃～240℃水热反应得到了具有层状结构的钛酸钠纳米线。研究了原料比例和反应温度的影响。利用X射线粉末衍射、电子显微术和X射线能量色散谱等结构分析手段研究了纳米线的微观结构。观察到纳米线内部存在大量畴界和缺陷。发现上述钛酸钠纳米线的结构与任何已知结构都不相同,初步标定为单斜结构,单胞参数为a=2.15nm, b=0.377nm, c=1.28nm, β=103.5°。进一步用上述纳米线和KOH溶液水热反应合成了钛酸钾(K₂Ti₈O₁₇)纳米线。     

基于多孔氧化铝模板的勃姆石纳米线的形成

使用高纯铝箔作为初始原料,以多孔阳极氧化铝模板为中间产物,通过对多孔阳极氧化铝模板进行水热反应的方法制备出勃姆石（γ-AlOOH）纳米线,产物的特征长度为60 nm,直径在2～5 nm之间。整个实验方法简单,且没有引入其他杂质元素。分析了反应过程及水热反应温度和时间对勃姆石纳米线形貌的影响,并通过对比实验表明AAO模板的纳米多孔结构是水热反应生成勃姆石纳米结构的必要条件和主要原因。     

Growth of nanowire superlattice structures for nanoscale photonics and electronics

The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits could enable diverse applications in nanoelectronics and photonics. Individual semiconducting nanowires have already been configured as field-effect transistors, photodetectors and bio/chemical sensors. More sophisticated light-emitting diodes (LEDs) and complementary and diode logic devices have been realized using both n- and p-type semiconducting nanowires or nanotubes. The n- and p-type materials have been incorporated in these latter devices either by crossing p- and n-type nanowires or by lithographically defining distinct p- and n-type regions in nanotubes, although both strategies limit device complexity. In the planar semiconductor industry, intricate n- and p-type and more generally compositionally modulated (that is, superlattice) structures are used to enable versatile electronic and photonic functions. Here we demonstrate the synthesis of semiconductor nanowire superlattices from group III-V and group IV materials. (The superlattices are created within the nanowires by repeated modulation of the vapour-phase semiconductor reactants during growth of the wires.) Compositionally modulated superlattices consisting of 2 to 21 layers of GaAs and GaP have been prepared. Furthermore, n-Si/p-Si and n-InP/p-InP modulation doped nanowires have been synthesized. Single-nanowire photoluminescence, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.     

Ti02纳米管状结构的可控制备及形成机理研究

利用自制的锐钛矿相TiO2纳米粉体为反应底物,在浓碱条件下,采用水热方法制备了长度100～200 nm,直径约10 nm的TiO2纳米管。通过研究碱种类及浓度、水热反应温度、反应时间及清洗方式对产物形貌及物相组成的影响来探究其形成机理。利用TEM及XRD对不同工艺条件下获得产物的形貌及物相组成进行了分析表征。研究表明,TiO2纳米管状结构在水热处理过程中可由部分片状结构自发卷曲而成,酸处理可促进片状结构向管状结构转化。调整清洗溶液的pH值为1时,可直接得到晶型完整的锐钛矿型TiO2纳米管。     

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Semiconducting carbon nanotubes and nanowires are potential alternatives to planar metal-oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique electronic structure and reduced carrier scattering caused by one-dimensional quantum confinement effects. Studies have demonstrated long carrier mean free paths at room temperature in both carbon nanotubes and Ge/Si core/shell nanowires. In the case of carbon nanotube FETs, devices have been fabricated that work close to the ballistic limit. Applications of high-performance carbon nanotube FETs have been hindered, however, by difficulties in producing uniform semiconducting nanotubes, a factor not limiting nanowires, which have been prepared with reproducible electronic properties in high yield as required for large-scale integrated systems. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar counterparts is still unclear. Here we report studies on Ge/Si core/shell nanowire heterostructures configured as FETs using high-kappa dielectrics in a top-gate geometry. The clean one-dimensional hole-gas in the Ge/Si nanowire heterostructures and enhanced gate coupling with high-kappa dielectrics give high-performance FETs values of the scaled transconductance (3.3 mS microm(-1)) and on-current (2.1 mA microm(-1)) that are three to four times greater than state-of-the-art MOSFETs and are the highest obtained on NWFETs. Furthermore, comparison of the intrinsic switching delay, tau = CV/I, which represents a key metric for device applications, shows that the performance of Ge/Si NWFETs is comparable to similar length carbon nanotube FETs and substantially exceeds the length-dependent scaling of planar silicon MOSFETs.     

金催化合成硫化锌纳米线及其发光性质的研究

采用金催化和直接蒸发ZnS粉末的方法,合成出大量具有纤锌矿结构的单晶ZnS纳米线。该纳米线的线径均匀,线形规则,直径在80~120 nm,长度约几十微米。研究发现纳米线的形貌对合成的温度很敏感,合成温度的升高会导致纳米线直径的迅速增加。单根纳米线EDS分析表明,ZnS纳米线线体中均匀分布着Au元素,Au元素的掺入是纳米线生长形成后由端部颗粒通过固态扩散进入纳米线中。室温光致发光谱显示:ZnS纳米线有两个发光峰,分别位于446 nm和520 nm处。446 nm的发光峰是由缺陷所致,而520 nm左右的发光峰是由Au元素掺杂所致。