Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and progress of InAlN- related studies, this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University, which focuses on innovation of the material growth approach and device structure for electronic applications. A novel pulsed metal organic chemical vapor deposition （PMOCVD） was first adopted to epitaxy of InAlN-related heterostructures, and excellent crystalline and electrical properties were obtained. Furthermore, the first domestic InAlN-based high-electron mobility transistor （HEMT） was fabricated. Relying on the PMOCVD in combination with special GaN channel growth approach, high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time. Additionally, other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications. Finally, some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications, showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.     

Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

Recently,chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene.In this paper,we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper,and then focus on the recent progress on the quality improvement,number of layers control and transfer-free growth of graphene.In the end,we attempt to analyze the possible development of CVD growth of graphene in future,including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders.     

玻璃陶瓷基板上铜薄膜的化学气相沉积

使用低介电常数基板和高电导率、高抗电迁移的金属Cu进行布线,可以提高高密度电子封装的传输速度和可靠性。采用乙酰丙酮铜作为前驱体,在常压下利用化学气相沉积技术对玻璃陶瓷基板进行Cu薄膜金属化。利用热重分析、X射线衍射和扫描电子显微镜等技术对前驱体、Cu薄膜进行分析观察。结果表明:影响Cu导体的电阻的主要因素是沉积温度。在温度为290～310℃,N2气流量为200～350mL/min和H2气流量为450～600mL/min的条件下,获得了致密的Cu薄膜,Cu导体方块电阻为25mΩ。     

化学气相沉积法制备光谱选择性碲膜

用化学气相沉积法制备碲薄膜,其步骤为：通过电化学方法制得碲化氢,碲化氢在室温下分解后在聚乙烯塑料箔上沉积得到碲薄膜.用傅里叶红外光谱仪、紫外/可见/近红外光谱仪、X射线衍射仪及扫描电镜表征碲薄膜的光学性能和结构.结果表明,化学气相沉积法在Mn-O覆盖的聚乙烯塑料箔上沉积得到的碲薄膜在大气窗口（8～13μm）光谱区域具有很高的透过率,同时能阻挡几乎所有的太阳光谱,表明碲薄膜是适用于辐射制冷装置的太阳光辐射屏蔽材料.     

环氧树脂上激光诱导局部化学沉铜

用激光诱导化学沉积方法在非导体环氧树脂基体上实现微区局部、快速化学沉铜，并用卢瑟福背散射和扫描电镜方法对镀层的形貌、性质进行了观测和分析。激光的输出功率密度及照射时间决定了镀斑的面积和厚度。所得镀层比传统方法所得的化学镀层更致密。同时，由于激光照射引起的短时局部高温，使界面的金属原子向光照区基体内部扩散，得到的铜镀层与基体有较好的结合力。     

单源化学气相沉积法制备In2O3纳米线

以乙酰丙酮合铟[In（acac）3]（acac=acetylacetonate）作为单源前驱体,Au为催化剂,采用化学气相沉积法,于较低温度（550℃）下成功制得了In2O3纳米线．用X射线粉末衍射（XRD）、扫描电镜（SEM）、透射电镜（TEM）和能量分散光谱（EDS）对In2O3纳米线进行了表征;制得的In2O3纳米线具有单晶结构,平均直径约为80nm,长度达十几微米,其生长服从气一液一固机理．光致发光研究发现,In2O3纳米线在483nm处有一个强的发射峰,这可归因于氧空位的存在．     

Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

Carbon nanotube array plays an important role in the area of nanomaterials due to its potential applications, e.g. as field emitter in flat panel display[1,2] and as template for synthesizing arrays of other important nanomaterials[3]. Anodic aluminum oxide (AAO) template possesses an ordered porous structure that is formed through self-or- ganization during anodization[4,5], and is widely used to synthesize one-dimensional nanomaterial arrays[6]. Carbon nanotubes are usually assembled into t…     

Synthesis of trans-bis(glycin- ato) copper(II) complex nanorods by room tempera- ture solid-state reaction

One-dimensional (1D) nano materials have attractedconsiderable attention due to their broad applications inoptics, magnetism, and microsystems electronics, etc.[1,2].Different approaches have been used to prepare 1D nano-materials including vapor evaporation method[3], hydro-thermal synthesis method[4], laser ablation method[5], mi-crowave irradiation method[6], carbon nanotube-confinedtemplate method[7] and other methods. Most of these syn-thetic efforts have been focused on carbon nanotubes,…     

Catalyst enhanced chemical vapor deposition of nano-particle nickel films on teflon surface

Films formed with nanosized nickel particles on teflon surface were prepared by means of catalyst enhanced chemical vapor deposition (CECVD) with Ni(dmg)₂, Ni(acac)₂, Ni(hfac)₂, Ni(TMHD)₂, and Ni(cp)₂ as precursors, and complexes Pd(hfac)₂, PdCl₂ and Pd(η ³-2-methylallyl)acac as catalyst under carrier gas (H₂). The film growth rate depends on the precursors and substrate temperature. The chemical value, purity and surface morphology of the Ni particle films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The films obtained were shiny with silvery color, and consisted of grains with a particle size of 50–140 nm. The Ni was metallic of which the purity was about 90%–95% from XPS analysis. SEM micrograph showed that the film had good morphology.      

Fabrication of multi-level branched metal nanowires by AAO template electrodeposition

One-dimensional nanomaterials have received con- siderable attention over the past decade because of their novel physical and chemical properties and potential applications in future nanodevices[1-4]. By manipulat- ing their texture, size and morphology, …     

化学镀法制备镍包铜复合粉末

采用化学镀法制备镍包铜复合粉末,通过研究化学镀过程中还原剂、络合剂及稳定剂的质量浓度、温度、pH值等因素对沉积速率的影响规律得出化学镀镍的优化条件.利用XRD、SEM和EDS等测试手段对优化条件下制备的复合粉末进行表征.研究结果表明:当硫酸镍质量浓度30g·L-1,铜粉质量浓度10g·L-1,联氨质量浓度60g·L-1,柠檬酸钠质量浓度50g·L-1,硫脲质量浓度10~20mg·L-1,控制温度80~90℃,pH=10,超声功率50W时,镀层沉积速度较快,复合粉末表面镍包覆层均匀,包覆层厚度为0.29μm.     

金属熔积直接成形翘曲变形的有限元分析

为了研究不同热边界条件对熔积直接成形金属零件翘曲变形的影响,运用有限元法建立了三维模型,通过变换冷却和加热条件来分析直壁件熔积成形过程在不同热边界条件成形过程中温度、应力变化和最终翘曲变形.模拟结果表明：熔积过程中运用随焊冷却技术,能使熔积层温度迅速降到接近环境温度,并在随后的时间内保持很低的温度梯度,从而减小了冷却阶段的应力水平,使得翘曲变形量降低;而熔积成形前对基板预热处理会增加热积累和温度梯度,导致残余应力及翘曲变形量的增加.     

高温气冷堆包覆燃料颗粒的化学气相沉积

我国正在建造１０ＭＷ高温气冷堆，包覆燃料颗粒的研制是高温气冷堆的关键技术之一。ＴＲＩＳＯ型包覆燃料颗粒是由燃料核芯、疏松热解碳层、内致密热解碳层、碳化硅层和外致密热解碳层组成。采用化学气相沉积方法，选用乙炔、丙烯、甲基三氯硅烷和氢气作为反应气体，在直径为５５ｍｍ锥形流化床包覆炉中制备包覆燃料颗粒。本文系统地研究了工艺参数和性能之间的关系，摸索出疏松热解碳层、致密热解碳层和碳化硅层的最佳包覆工艺条件，总结出经验公式，用扫描电镜观察了包覆燃料颗粒的微观结构，制备出满足设计要求的ＴＲＩＳＯ型包覆燃料颗粒。     

重金属螯合剂在含铜废水处理中的应用

对重金属螯合剂(EP110)处理印制电路板含铜废水进行了应用研究,讨论了pH值、EP110投加量、反应时间、助凝剂APC或PAC或PFS投加量及废水铜离子含量对处理结果的影响。试验结果表明,在pH值为3～13、EP110投加量大于水中Cu2+含量7倍(质量比)、反应时间约为15min及投加少量PAC/PFS的条件下,可以使处理水中Cu2+含量低于0.5mg/L的国家允许排放标准;采用该方法处理印制电路板低铜含量的含铜废水优于采用传统的化学处理法。     

铜基石墨烯的CVD法制备工艺参数研究

采用乙炔作为碳源,分析了碳源浓度、生长时间等参数对铜基石墨烯成核密度、生长速率及单层覆盖率的影响,通过热氧化法系统展示了石墨烯形核、长大、生长结束的全过程.研究发现;碳源浓度较小时成核密度较低,所得石墨烯晶粒更大,但单个多层点的面积较大,且多以双层为主;在石墨烯生长过程中,氢气既可辅助碳氢化合物分解,同时也会刻蚀部分成核点,从而促进石墨烯质量的提高;基于单层率与晶粒尺寸之间的平衡,采用乙炔与氢氩混合气(体积比为1∶9)流速比为5∶100作为生长石墨烯的气体工艺参数,获得了透过率约为97.1%,缺陷较少且以单层为主的大面积石墨烯.     

Fabrication of MgB2 superconducting films by different methods

MgB₂ superconducting films have been successfully fabricated on single crystal MgO(111) and c-AL₂O₃ substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transition temperature of 38.4 K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with the zero resistance transition temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density J_c of 10⁷ A/cm² at 15 K in zero field for the thin film and of 10⁵ A/cm² for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100 μΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO.     

神府煤流化床低温氧化煤分子中活性基因的变化

对神府大柳塔2-2煤样在流化床反应器中进行氧化实验,并对氧化后的系列煤样进行了FTIR分析;讨论了氧化过程中煤分子结构中含氧官能轩、脂肪族及芳香族主要基团的变化规律。     

Synthesis of LiFePO4 in situ vapor-grown carbon fiber （VGCF） composite cathode material via microwave pyrolysis chemical vapor deposition

One of the most important factors that limits the use of LiFePO 4 as cathode material for lithium ion batteries is its low electronic conductivity.In order to solve this problem,LiFePO 4 in situ vapor-grown carbon fiber (VGCF) composite cathode material has been prepared in a single step through microwave pyrolysis chemical vapor deposition.The phase,microstructure,and electrochemical performance of the composites were investigated.Compared with the cathodes without in situ VGCF,the initial discharge capacity of the composite electrode increases from 109 to 144 mA h g-1 at a 0.5-C rate,and the total electric resistance decreases from 538 to 66.The possible reasons for these effects are proposed.     

Preparation of A-type zeolite membranes on nonporous metal supports by using electrophoretic technique

A-type zeolite membranes were prepared on the nonporous metal supports by using electrophoretic technique. The as-synthesized membranes were characterized by XRD and SEM. The effect of the applied potential on the formation of the A-type zeolite membrane was investigated,and the formation mechanism of zeolite membrane in the electric field was discussed. The results showed that the negative charged zeolite particles could migrate to the anode metal surface homogenously and rapidly under the action of the applied electric field, consequently formed uniform and dense membranes in short time. The applied potential bad great effect on the membrane formation, and more uniform and denser zeolite membranes were prepared on the nonporous metal supports with 1 V potential.