匀晶系Sb_(95)Bi_5合金熔体的液态结构变化规律与机理研究

利用液态金属X射线衍射仪和液态金属电阻率测量设备,分析了不同温度下Sb95Bi5合金的熔体结构、团簇相关半径以及Sb95Bi5合金熔体在降温过程中电阻率随温度的变化规律。实验结果表明,Sb95Bi5合金熔体的原子团簇相关半径在700~675℃之间发生了明显的变化,电阻率温度系数在698℃也发生了相应的变化,表明合金熔体在该温度范围内发生了液态结构的变化,这是由于该熔体中原子团簇在降温过程中发生Peierls形变所致。     

掺杂元素物态对PTC材料性能的影响

研究了Ｙ－Ｓｂ，Ｌｉ－Ｍｎ，Ｓｉ－Ａｌ等元素以固相或液相掺杂对正温度系数热敏电阻（ＰＴＣ）材料性能的影响。实验结果表明，Ｌｉ－Ｍｎ液相掺杂可以提高材料ＰＴＣ效应及耐压值；Ｓｉ－Ａｌ液相掺杂可降低材料室温电阻率，提高材料耐压值，Ｙ－Ｓｂ液相掺杂可以降低材料室温电阻率，但ＰＴＣ效应有所降低     

二元合金PbBi电阻率随温度的异常变化

文章通过电阻法对PbBi合金的电阻率进行了测量。发现在液相线以上一定的温度范围内,其电阻率随温度的升高而线性增加,即其电阻率温度系数α(α=dρ/dt)基本保持不变;当温度超过某一临界温度时,α随温度的升高出现异常变化。经分析可以认为,不同的合金成分具有不同的转变温度;液态PbBi合金高温区可能存在着温度诱导的液-液结构转变。     

Electronic and structural transitions in dense liquid sodium

At ambient conditions, the light alkali metals are free-electron-like crystals with a highly symmetric structure. However, they were found recently to exhibit unexpected complexity under pressure. It was predicted from theory--and later confirmed by experiment--that lithium and sodium undergo a sequence of symmetry-breaking transitions, driven by a Peierls mechanism, at high pressures. Measurements of the sodium melting curve have subsequently revealed an unprecedented (and still unexplained) pressure-induced drop in melting temperature from 1,000 K at 30 GPa down to room temperature at 120 GPa. Here we report results from ab initio calculations that explain the unusual melting behaviour in dense sodium. We show that molten sodium undergoes a series of pressure-induced structural and electronic transitions, analogous to those observed in solid sodium but commencing at much lower pressure in the presence of liquid disorder. As pressure is increased, liquid sodium initially evolves by assuming a more compact local structure. However, a transition to a lower-coordinated liquid takes place at a pressure of around 65 GPa, accompanied by a threefold drop in electrical conductivity. This transition is driven by the opening of a pseudogap, at the Fermi level, in the electronic density of states--an effect that has not hitherto been observed in a liquid metal. The lower-coordinated liquid emerges at high temperatures and above the stability region of a close-packed free-electron-like metal. We predict that similar exotic behaviour is possible in other materials as well.     

Large disparity between gallium and antimony self-diffusion in gallium antimonide

The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice ('self-') atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formation and migration enthalpies determine the kinetics of this thermally activated process. Self-diffusion studies also contribute to the understanding of the diffusion of impurities, and a quantitative understanding of self- and foreign-atom diffusion in semiconductors is central to the development of advanced electronic devices. In the past few years, self-diffusion studies have been performed successfully with isotopically controlled semiconductor heterostructures of germanium, silicon, gallium arsenide and gallium phosphide. Self-diffusion studies with isotopically controlled GaAs and GaP have been restricted to Ga self-diffusion, as only Ga has two stable isotopes, 69Ga and 71Ga. Here we report self-diffusion studies with an isotopically controlled multilayer structure of crystalline GaSb. Two stable isotopes exist for both Ga and Sb, allowing the simultaneous study of diffusion on both sublattices. Our experiments show that near the melting temperature, Ga diffuses more rapidly than Sb by over three orders of magnitude. This surprisingly large difference in atomic mobility requires a physical explanation going beyond standard diffusion models. Combining our data for Ga and Sb diffusion with related results for foreign-atom diffusion in GaSb (refs 8, 9), we conclude that the unusually slow Sb diffusion in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices, which suppress the defects that are required for Sb diffusion.     

Some Remarks on the Degree of Crystallinity Measured on DSC

A modified mathematical model based on the melting and recrystallization of an initial distribution of melting temperatures predicts the melting behavior of polymer in differential scanning calorimetry ( DSC ) , taking into account of changes in heat of fusion with melting temperature of crystal and average heat capacity of sample. It has been used to analytically prove that the crystallinity measured on a DSC diagram could not be equal to the weight percentage of crystalline state in the initial specimen. The deviation of the measured crystallinity, as observed relevant to the melting and recrystallization processes, is caused by the changes of the heat of fusion with the melting temperature of crystals, as well as the difference of heat capacities of liquid and solid state polymer. Furthermore, upper and lower limits of the deviation have been discussed.     

硅铁在铁液中的熔解动力学研究

采用圆柱形硅铁试样,通过连续测量其浸入不同温度铁液后的体积和温度变化,对硅铁在铁液中的熔解动力学进行了研究。结果表明：硅铁浸入铁液至完全熔解分为两个时间,即铁壳壳期和熔解期;硅铁在高温铁液与低温铁液中的熔解机制不同,当铁液温度高于１３３０℃时,硅铁的熔解主要为熔化机制。     

Lal／3Ndl／3Bal／aMn03的电阻率双峰和低温电阻率反常现象

用固相反应法制备了二元稀土掺杂的La1／3Ndl／3Ba1/3Mn03多晶庞磁电阻块材．x射线衍射分析表明在1200℃烧结的样品具有立方对称的晶格结构．热磁曲线显示材料在低温处于自旋冰状态．自旋冰的熔点随着外磁场的增大而降低．在磁场达到40kOe时,自旋冻结现象消失．材料的居里温度为-250K,但室温磁化曲线中出现由微弱不均匀品格畸变造成的寄生铁磁性行为．电阻率一温度曲线出现双峰现象．在居里温度附近出现的电阻率峰由晶体的本征特性贡献,在低于居里温度的～190K附近出现的电阻率峰由界面隧穿效应贡献．电阻率在～40K附近出现极小值．经过曲线拟合证实,其行为与近藤效应相似．研究结果较为全面地分析了单相多晶CMR材料的基本磁电相关特性．     

压力对稀土元素Sm填充方钴矿化合物热电性能的影响

通过高温高压方法合成出稀土元素Sm填充n型方钴矿化合物SmxCo4Sb12（0〈x〈1）,并考察了在室温下Sm填充率对热电性能的影响规律.结果表明：SmxCo4Sb12化合物表现为n型传导;电阻率和Seebeck系数随着合成压力的增加逐渐增加;晶格热导率随着Sm填充分数的增加而降低,在Sm填充量为0.5时达到最小值.室...     

掺杂Sb对Sn-Ag-Cu焊料性能的影响

在Sn-3．0Ag-0．5Cu系焊料中分别掺杂不同比例的Sb（锑），制备了无铅焊料合金．用DSC差示扫描量热仪测试熔点，用扫描电子显微镜对其显微组织进行分析，并对其导电性，润湿性等进行测试．实验结果表明，一定比例掺杂的Sn-Ag-Cu-Sb焊料，比未掺杂时，熔点下降不明显，但其显微组织结构更细化，导电性、润湿性有明显提高．     

Sb及Bi熔体的非牛顿流变行为

采用同轴圆筒高温粘度计，测定了Sb、Bi的流变性。结合牛顿定律的理论分析将剪切应力与剪切速率的关系转换成搅拌扭矩与转速的关系，用来判断熔体的流变特性。实验结果显示Sb熔体的扭矩-转速图成良好的线性关系，而Bi熔体则呈现明显的非牛顿性。两种熔体所表现出的不同的流变行为，与其液态结构密切相关。     

NdIn_(3-x)Mn_x合金化合物的结构和磁电输运性质

本文应用非自耗真空电弧炉制备稀土NdIn3-xMnx(x=0,0.2,0.3,0.5)合金化合物.采用X射线粉末衍射(XRD)研究其相成分和结构,利用TREOR对衍射数据进行指标化,采用Rietveld全谱拟合分析方法测定了NdIn3-xMnx的晶体结构.结果表明:当x≤0.3时,为具有AuCu3型结构,空间群为Pm3m,Z=1,点阵常数a=4.640(6)-4.738(7);当x=0.5时,化合物中出现杂相In.在x≤0.3固溶区,Mn原子部分取代In原子占据3c(0.5,0.5,0)晶位,Nd原子占据1a(0,0,0)晶位.NdIn3-xMnx的磁化曲线显示:当x≤0.2时,呈现出顺磁结构;当x=0.3时,呈现出弱铁磁性和顺磁性的混合.NdIn2.7Mn0.3电阻率在0–300 K区间变化呈半金属性.     

Enhanced thermoelectric performance of rough silicon nanowires

Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.     

重掺Sb硅单晶中氧沉淀的研究

本文用化学腐蚀和透射电镜及其能谱分析研究了重掺Sb硅单晶中的氧沉淀。化学腐蚀结果表明,Sb的掺入有促进形核的作用,但其最大成核速率仍在750℃左右。随着退火时间的延长,沉淀密度首先增加,而后又下降。透射电镜观察到氧沉淀呈平行四边形平板状,并发现有氧沉淀群及与沉淀相连的位错缠结,但未发现层错。对氧沉淀大小的测量结果表明,它的生长满足t~(3′4)规律。能谱分析指出,Sb元素不参与氧沉淀。为解释Sb的掺入促进形核,本文提出了空位和间隙硅原子影响氧沉淀形成的模型。按此模型,单位体积晶坯的自由能变化应为ΔG_v=-ΔH_v(O)(T_e(O)-T)/T_e(O)-ΔH_v(Si)(T-T_e(Si))/T_e(Si)假设Sb的掺入增加空位浓度,减小间隙硅原子浓度。为此,间隙硅原子的饱和温度将降低。由上式,ΔG_v将随Sb浓度的增加而为更大的负值。因此,氧沉淀形核速率将随掺Sb浓度的增加而加速。     

炭黑／橡胶涂层复合材料导电性能的研究

本研究了橡胶／炭黑复合材料体系的导电性能。实验指出，其电阻率随温度的变化呈不同强度的正温度系数（ＰＴＣ）效应，讨论了不同炭黑粒子填充率，橡胶基体的性质，炭黑的结构及表面性质，加工工艺和硫化条件等对室温电阻率及ＰＴＣ效应的影响。     

Breakdown of intermediate-range order in liquid GeSe(2) at high pressure.

Studies of liquids with tetrahedral coordination, particularly during compression or quenching, have indicated the existence of distinct phases in the liquid state, distinguishable by density and local structure. In systems that exhibit critical phenomena in the supercooled state, anomalous behaviour of the compressibility is also anticipated above the critical point, as revealed by simulations of water. Liquid GeSe(2) is a potentially attractive system for studying both types of phenomena, given its two-dimensional tetrahedral structure and anomalous physical properties (including a density minimum near its melting point). Here we report in situ X-ray diffraction measurements of solid and liquid GeSe(2) at high temperature and high pressure, revealing that the structure of the liquid is sensitive to pressure and that anomalous compressibility is expected. During compression of liquid GeSe(2), the connectivity of the liquid changes from two- to three-dimensional, leading to a breakdown of the intermediate-range order. The gradual change in structure above the melting line may develop to a first-order liquid-liquid transition in the supercooled regime.     

DMF铁矿粉在含铬型钒钛混合料烧结中的应用

对一种低品位廉价赤铁粉(DMF粉)配加在含铬型钒钛混合料中烧结的可行性进行了研究.通过微型烧结装置和熔点测定仪对DMF粉的液相流动性和溶化特性进行了分析.结果表明,DMF粉液相流动性好,液相开始生成温度ts及有效液相终止温度tf较低,溶化区间t较宽,溶化时间τm充分,安全液相量的生成速度较小(0.125 mm/min),可弥补含铬型钒钛烧结矿液相量的不足,实现优化配矿.烧结杯实验结果表明,配加10%DMF粉的含铬型钒钛烧结矿各项指标均较好,且有利于高炉的稳定顺行.     

冻土电阻率与其温度的关系研究

为研究冻土电阻率与温度的关系,采用自制电阻测量装置,对不同温度的砂土和黏土试样进行了电阻测试。结果表明,当温度大于0 ℃时,土的电阻率变化不大;当温度小于0 ℃时,土的电阻率随温度的下降而明显上升。出现这种现象的原因在于,当温度降低至0 ℃以下时,土中水分随温度的降低将逐渐部分或全部冻结为冰,而冰的电阻率大于液态水的电阻率。此外,冻土的电阻率还与土的类型有关,在干密度、含水量、温度均相同的条件下,砂土的电阻率大于黏土的电阻率。     

高纯三氯化锑的制备

研究了SbCl     

稀土Y改性Ti／Sb2O5-SnO2电催化电极的制备及表征

为改善Ti／Sb2O5-SnO2电极的电催化性能,采用浸渍法制备了Y改性Ti／Sb2O5-SnO2电极。以活性艳红X-3B为目标有机物,考察了电极的电催化性能,对制备温度和Y掺杂量进行了详细的实验研究,确定的适宜制备条件为热处理温度550℃、Y掺杂量0.8％。采用SEM、EDS、XRD等分析方法对所制备电极的表面形貌、元素组成及结构进行分析,发现稀土Y的掺杂可以使SnO2粒径变小,有利于电极电催化性能的改善,同时Y元素的引入可使杂质元素Sb、Y在电极表面涂层富集。Y改性Ti／Sb2O5-SnO2电极表面主要是四方相金红石结构的SnO2晶体。电极动电位扫描测试结果表明Y改性Ti／Sb2O5-SnO2电极具有较高的阳极析氧电位,有利于有机物的阳极氧化降解。