Supercondcuting properties in MgB2／Fe wires prepared by PIT method

The discovery of superconductivity at 39 K in MgB2has attracted a lot of interest in the world[15]. Recently, many results on the magnetic and transport properties of bulks have been reported. And high critical currentdensities (Jc) in polycrystalline MgB2 materials indicate that Jc is not limited by the weak link of grain boundaries as high temperature superconductor (HTS), suggestingthat MgB2 has a good potential for electrical engineering applications[2,48]. The fabrication of high qua…     

High critical current density in powder-in-tube processed MgB2/Ta/Cu wire

The magnetization of dense MgB2/Ta/Cu wires prepared by the powder-in-tube method is measured by a SQUID magnetometer. The results indicate that the critical temperature of MgB2/Ta/Cu is around 38.4 K with a sharp transition width of 0.6 K. The MgB2/Ta/Cu wire shows a strong flux pinning and the critical current density is higher than 105 A/cm2 (5 K, self-field) and 104 A/cm2 (20 K, 1 T). Also, the irreversibility field of the sample reaches 6.6 T at 5 K.     

Fabrication of the 19-filament Fe/Cu clad MgB2 wire via in situ powder-in-tube method

Using commercial amorphous B powder (92% in purity) and Mg powder (99% in purity) as starting materials, 19-filament Fe/Cu clad MgB2 wires were fabricated by an in situ powder-in-tube method. Heat treatment was performed at 700℃ for 1 h under an argon gas atmosphere. The influence of Mg/B ratio on the microstructure and superconducting properties of the wires was investigated. It was found that the major phases of MgB2 wires were MgB2 accompanied with relatively small amounts of MgO and Fe2B impurities. With 5% excess Mg addition, the onset TC slightly decreased. However, the transport JC at 4.2 K and 4 T reached 1.07×104 A·cm-2, increasing by a factor of 1.4 compared to the stoichiometric sample. Moreover, the Mg1.05B2 sample showed an improved field dependence of JC, suggesting that less voids and smaller grain size of the Mg1.05B2 core lead to better grain connectivity and stronger flux pinning.     

Magnetic property and interface structure of Ta/NiO/NiFe/Ta

Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6×10³ A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomp- osition technique. The results show that there is an “inter- mixing layer” at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta₂O₅. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth- profiles is about 8—10 nm.     

Fabrication and superconducting properties of nano-SiC doped MgB2 tapes

Nano-SiC doped MgB2 tapes were prepared by the in situ powder-in-tube method. Heat treatment was performed at 650℃ for 1 h. XRD data indicate that SiC particles had reacted with the MgB2 during sintering process. MgB2 core seemed to be denser after SiC doping, and the critical temperature was slightly depressed. The critical current density Jc of the SiC doped tapes was significantly enhanced in magnetic fields up to 14 T compared to the undoped ones. For the 5% SiC doped samples, Jc was in- creased by a factor of 32 at 4.2 K, 10 T. The enhancement of Jc-B properties in SiC doped MgB2 tapes is considered to be due to the enhancement of grain linkages and the introduction of effective flux pining centers. The substitution of B by C in MgB2 grains is thought to be the main reason for the improve- ment of the flux pinning ability in SiC doped MgB2 tapes.     

泡沫镍上原位生长CoMn2O4多级空心纳米球作为超级电容器电极材料的电化学性能研究

采用水热法结合空气气氛中的热处理过程,在泡沫镍（NF）表面生长了锰酸钴（CoMn₂O₄）多级空心纳米球,通过X射线衍射仪（XRD）、场发射扫描电镜（FE-SEM）和X射线光电子能谱（XPS）等测试手段对纳米球进行了表征.在三电极电化学测量系统中,0.1Co²⁺-250电极材料在5 mA·cm^-2时的面积比电容高达6 184 mF·cm^-2.以0.1Co²⁺-250为正极,商用活性炭（AC）为负极组装而成的混合超级电容器,在1.6 mW·cm^-2时的最大能量密度为0.112 mWh·cm^-2.即使在功率密度为16 mW·cm^-2时,能量密度仍达到0.064 mWh·cm^-2.在2 mA·cm^-2的电流密度下,经过10 000次充放电循环后,电容保持了初始值的93%.因其优越的电化学性能和低成本的便捷合成方法,CoMn₂O₄多级空心纳米球作为电极材料具有重要的应用前景.     

中温SOFC阴极材料La0.7Sr0.3Co1-xCuxO3-δ的制备及性能

采用固相反应法制备了La_0.7Sr_0.3Co_1-xCu_xO_3-δ系列中温固体氧化物燃料电池（SOFC）阴极材料粉体.对其进行晶体结构表征,高温电导率和热膨胀曲线测试,并选取其中性能较好的样品进行了单电池实验.结果表明,Cu的掺杂降低了（La,Sr）CoO La₃体系阴极材料的热膨胀系数,在x=0.05时电导率略高于未掺Cu的样品.以La_0.7Sr_0.3Co_0.95Cu _0.05O _3-δ为阴极、Ce_0.8Sm_0.2O_1.9为电解质组成的SOFC单电池,在850℃最大短路电流密度达511mA/cm²,最大输出功率密度约为0.106W/cm².     

CO2的温室效应饱和度分析及其大气体积分数预测模型

通过精确的LBLRTM逐线积分模式建立CO_2体积分数变化模型,分析了CO_2的温室效应饱和度,并对未来地表温升的变化趋势进行了预测.结果表明,目前CO_2的持续排放只能使其在680cm~(-1)强吸收带中心达到饱和,而在未来相当长一段时间内,其仍将通过该吸收带的翼区以及1 000cm~(-1),1 350cm~(-1)与1 900cm~(-1)等弱吸收带对地表红外辐射表现出强烈的吸收,CO_2的温室效应还远未达到饱和;如果按照当前CO_22.2(mL/·m~(-3))/a的年排放速率,CO_2的大气体积分数将会持续增加,从而造成地表温度不断升高,到2056年,地表温升将会达到2K.     

High-pressure synthesis and properties of CeO2-ZrO2 solid solution

Using nanoparticles of CeO₂ and ZrO₂ prepared by the chemical precipitation method as starting materials, the singlephase cubic Ce_0.5Zr_0.5O₂ solid solution (cCe_0.5Zr_0.5O₂) has been synthesized under 3.1 GPa at 1073 K for the first time. The structure of the c-Ce_0.5Zr_0.5O₂ has not been changed before and after annealing at 773 K for 1 h. Only an unknown EPR signal (g =1.990) has been observed in the c-Ce_0.5Zr_0.5O₂ and not varied after annealing at 773 K for 1 h, which exhibited that there exists no Ce³⁺ in the c-Ce_0.5Zr_0.5O₂ and the Ce⁴⁺ has not been reduced into Ce³⁺ after annealing. The transport mechanism is ionic for the c-Ce_0.5Zr_0.5O₂. The bulk conductivity (σ =1.2 ×10⁻⁵ S/cm at 823 K, σ=2.1 × 10⁻³ S/cm at 1123 K) is the same as that of CeO₂, but smaller than that of Y₂O₃-stabilized ZrO₂. A marked curvature at T = 823 K has been observed in the Arrhenius plot of the bulk conductivity. The activation energy below 823 K is lower than that above 823 K, and the reason has been discussed.     

La0.7Ca0.3Mn1-xCuxO3的电输运特性

通过固相反应法制备不同掺杂浓度的La_0.7Ca_0.3Mn_1-xCu_xO₃（x=0~0.15）样品, 在77~300 K温度范围内测量了铜掺杂后样品电阻随温度的变化关系. 结果表明, 在未引入铜杂质时, 低温铁磁相的电阻率满足T^2.5关系, 顺磁相符合小极化子近邻跳跃模型; 在低掺杂下, 铁磁区可用T^4.5关系解释; 随着掺杂浓度的增加, 在铁磁区和顺磁区, 任何单一模型均与实验不相符, 表明高掺杂样品的电输运性质存在未知模型.      

Photovoltaic properties of MEH-PPV/TiO2 nanocomposites

Photovoltaic properties of photodiodes based on nano-TiO2 and poly[2-methoxy,5-（2＇-ethlhexyloxy）-p-phenylenevinylene] （MEH-PPV） composites are investigated. By comparing composite devices with the same weight of TiO2 （nanoparticles and nanotubes）：MEH-PPV, it was found that the device with TiO2 nanotubes exhibited better performance. By further optimizing the weight radio of TiO2 nanotubes： MEH-PPV, we gained the device with a short circuit current density of 9.27μA/cm^2 with a light intensity of 16.7mW/cm^2 at the 500 nm wavelength, the highest open-circuit voltage of 1.1V, and a photosensitivity of 332 at reverse bias of -0.6V. The photosensitivity is improved by a factor of 33 compared with the undoped MEH-PPV device.     

CuO/CeO2催化剂在温度变动过程中的CO-PROX催化性能

采用浸渍方法制备不同Cu/Ce原子比的CuO/CeO₂催化剂,用于富氢气体中CO优先氧化反应(CO-PROX),考察其在温度变动情况下的催化性能. 利用X射线衍射(XRD)、程序升温还原(TPR)方法对反应前后催化剂样品进行了表征. XRD测试表明,催化反应后的催化剂中有金属Cu0生成. 这与文献结果一致. 与不含CO₂的情况比较,当模拟富氢气体中含有CO₂时,低温段催化活性明显下降. Cu/Ce原子比为10%的催化剂在温度变动过程中具有较稳定的催化性能.      

A novel Pd/silicalite-1 composite membrane for hydrogen separation

A novel Pd/silicalite-1 composite membrane supported on the macroporous tubular stainless steel substrate was successfully fabricated by electroless plating at 303 K. The structure, morphology and gaseous permeability of the membrane were detected by X-ray diffractiometry （XRD）, scanning electron microscopy （SEM） and single-gas permeation test, respectively. Results confirm the formation of a thin, smooth, and continuous Pd/silicalite-1 composite membrane. The obtained composite membrane shows a high H2 permeance of 1.15×10^-6 mol. m^-2. s^-1. Pa^-1 with moderate H2 selectivity of 250 for H2/N2 at 773 K, at 0.1 MPa pressure drop, suggesting the potential application for H2 separation.     

基于植酸锆/普鲁士蓝复合膜的电催化行为研究

通过层层自组装技术,构建植酸锆/普鲁士蓝(Zr-IP_6/PB)多层结构膜.基于普鲁士蓝(PB)对双氧水(H_2O_2)有很高的电催化性能,加之5层植酸锆/普鲁士蓝膜多孔结构有利于传质过程,该H_2O_2传感器具有高灵敏度和高选择性.实验结果显示:修饰电极对H_2O_2响应的物质的量浓度范围为2.00×10~(-5)～1.76×10~(-3) mol·L~(-1),线性相关系数R=0.998 9.     

I-V andC-V properties of TiO2 thin film by pulsed-laser reactive deposition

TiO-2 thin films have bee deposited on p-Si(111) substrates by pulsed-laser ablation of metallic Ti target in the O-3 ambient. The current-voltage and capacitance-voltage of the Al/TiO-2/Si capacitors are measured. The results show that the dielectric constant of thin film after being annealed at 700℃ is found to be 46, and the border trap density and the interface state density at the TiO-2/p-Si interface are 1.8×10 12 cm -2 and 2×10 12 eV -1·cm -2, respectively. The conduction mechanisms of as-deposited films are also discussed.     

Electromigration in eutectic SnAg solder reaction couples with various ambient temperatures and current densities

The electromigration behavior of eutectic SnAg solder reaction couples was studied at various temperature (25 and 120℃ when the current density was held constant at 104 A/cm2 or 5×103 A/cm2. Under the current density of 104 A/cm2, scallop type Cu₆Sn₅ spalls and migrates towards the direction of electron flow at room ambient temperature (25℃), but transforms to layer type Cu₃Sn and leaves Kirkendall voids in it at high ambient temperature (120℃). Under the current density of 5×103 A/cm2 plus room ambient temperature, no obvious directional migration of metal atoms/ions is found. Instead, the thermal stress induced by mismatch of dissimilar materials causes the formation of superficial valley at both interfaces. However, when the ambient temperature increases to 120℃, the mobility of metal atoms/ions is enhanced, and then the grains rotate due to the anisotropic property of β-Sn.     

MoTe2的电子结构及光学性质的理论研究

利用密度泛函理论第一性原理方法对MoTe_2的能带结构、能态密度和光学性质进行了理论计算,得到能带结构、态密度、光吸收谱、能量损失谱和介电函数等光学性质。结果表明:MoTe_2具有间接带隙宽度为1.066 eV的半导体材料,价带主要由Mo的5s4p价电子和Te的5s5p价电子起主要作用;导带由Mo和Te的4d价电子起主要作用。由获得的光学性质可知,介电函数的实部和虚部的峰值都出现在低能区;位于可见到紫外区域的光子具有很强的吸收,最大吸收系数为2.84×10~5cm~(-1);同时在光子能量为16.40 eV处出现了共振现象,其它区域内电子之间共振非常微弱。这些光学性质奠定了该材料在制作微电子和光电子器件方面的作用。     

SmCoO3 的固相合成及性质

以Sm₂O₃和Co₂O₃为原料,使用高温固相反应法合成SmCoO₃正交钙钛矿化合物,采用X射线衍射、Raman谱、热膨胀仪和高温电导等测试技术对样品进行了结构和性能研究.结构分析表明,Sm₂O₃与Co₂O₃在1353K附近可以进行固态反应,形成单相性很好的SmCoO₃正交钙钛矿相.高温电导测量显示单相SmCoO₃随温度升高由绝缘体向半导体转变,Arrhenius图表明绝缘体—半导体转变点在470K附近.单相SmCoO3的热膨胀系数在873K以上为2.17×10^-5K^-1,和掺杂LaGaO₃相近,但明显大于SDC（Ce_0.85Sm_0.15O₂）的热膨胀系数.     

CuFe2O4纳米粒子增敏Luminol-EDTA化学发光体系研究及应用

基于CuFe_2O_4纳米粒子能显著增强Luminol-EDTA体系的发光,首次建立了Luminol-EDTA-CuFe_2O_4 NPs化学发光新体系。紫外吸收光谱和化学发光光谱表明纳米CuFe_2O_4注入Luminol-EDTA体系后,未生成新发光物质,结合纳米CuFe_2O_4的特性,提出了CuFe_2O_4 NPs参与Luminol-EDTA体系可能的发光机理。研究发现芦丁能抑制Luminol-EDTACuFe_2O_4 NPs体系的化学发光,结合流动注射技术,将此化学发光体系应用于芦丁片中芦丁含量的测定。在优化实验条件下,芦丁浓度在2×10~(-8)~2×10~(-5) mol/L范围内芦丁浓度的对数和相对化学发光值呈线性,芦丁浓度检出限(LOD)为1.21×10~(-9) mol/L。将本方法应用于芦丁片中的芦丁含量测定,回收率为97%~102%,RSD为2.54%(c=1×10~(-7) mol/L,n=11)。     

Chemical states of the atoms in magnetic multilayers Ta/NiO x /Ni81Fe19/Ta and Co/AlO x /Co

Ta/NiO _x /Ni₈₁Fe₁₉/Ta and Co/AlO _x /Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (H _ex) and the coercivity (H _c) of NiO _x /Ni₈₁Fe₁₉ as a function of the ratio of Ar to O₂ during the deposition process were studied. The composition and chemical states at the interface region of NiO _x /NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O₂ is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiO _x is antiferromagnetic NiO and the corresponding H_ex is the largest. As the ratio of Ar/O₂ deviates from 7, the H _ex will decrease due to the presence of magnetic impurities such as Ni⁺³ or metallic Ni at the interface region of NiO _x /NiFe, while the H _c will increase due to the metallic Ni. Al layers in Co/AlO _x /Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AlO _x was 1.2 nm.