The microscopic nature of localization in the quantum Hall effect

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties owing to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated with a single-particle drift motion of electrons along contours of constant disorder potential. Transport experiments that probe the extended states in the transition regions between quantum Hall phases have been used to test both the theory and its implications for quantum Hall phase transitions. Although several experiments on highly disordered samples have affirmed the validity of the single-particle picture, other experiments and some recent theories have found deviations from the predicted universal behaviour. Here we use a scanning single-electron transistor to probe the individual localized states, which we find to be strikingly different from the predictions of single-particle theory. The states are mainly determined by Coulomb interactions, and appear only when quantization of kinetic energy limits the screening ability of electrons. We conclude that the quantum Hall effect has a greater diversity of regimes and phase transitions than predicted by the single-particle framework. Our experiments suggest a unified picture of localization in which the single-particle model is valid only in the limit of strong disorder.     

Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures

The observation of vanishing electrical resistance in condensed matter has led to the discovery of new phenomena such as, for example, superconductivity, where a zero-resistance state can be detected in a metal below a transition temperature T(c) (ref. 1). More recently, quantum Hall effects were discovered from investigations of zero-resistance states at low temperatures and high magnetic fields in two-dimensional electron systems (2DESs). In quantum Hall systems and superconductors, zero-resistance states often coincide with the appearance of a gap in the energy spectrum. Here we report the observation of zero-resistance states and energy gaps in a surprising setting: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a 2DES exhibit vanishing diagonal resistance without Hall resistance quantization at low temperatures and low magnetic fields when the specimen is subjected to electromagnetic wave excitation. Zero-resistance-states occur about magnetic fields B = 4/5 Bf and B = 4/9 Bf, where Bf = 2pifm*/e,m* is the electron mass, e is the electron charge, and f is the electromagnetic-wave frequency. Activated transport measurements on the resistance minima also indicate an energy gap at the Fermi level. The results suggest an unexpected radiation-induced, electronic-state-transition in the GaAs/AlGaAs 2DES.     

High-resolution spectroscopy of two-dimensional electron systems

Spectroscopic methods involving the sudden injection or ejection of electrons in materials are a powerful probe of electronic structure and interactions. These techniques, such as photoemission and tunnelling, yield measurements of the 'single-particle' density of states spectrum of a system. This density of states is proportional to the probability of successfully injecting or ejecting an electron in these experiments. It is equal to the number of electronic states in the system able to accept an injected electron as a function of its energy, and is among the most fundamental and directly calculable quantities in theories of highly interacting systems. However, the two-dimensional electron system (2DES), host to remarkable correlated electron states such as the fractional quantum Hall effect, has proved difficult to probe spectroscopically. Here we present an improved version of time-domain capacitance spectroscopy that allows us to measure the single-particle density of states of a 2DES with unprecedented fidelity and resolution. Using the method, we perform measurements of a cold 2DES, providing direct measurements of interesting correlated electronic effects at energies that are difficult to reach with other techniques; these effects include the single-particle exchange-enhanced spin gap, single-particle lifetimes in the quantum Hall system, and exchange splitting of Landau levels not at the Fermi surface.     

Tunnelling between the edges of two lateral quantum Hall systems

The edge of a two-dimensional electron system in a magnetic field consists of one-dimensional channels that arise from the confining electric field at the edge of the system. The crossed electric and magnetic fields cause electrons to drift parallel to the sample boundary, creating a chiral current that travels along the edge in only one direction. In an ideal two-dimensional electron system in the quantum Hall regime, all the current flows along the edge. Quantization of the Hall resistance arises from occupation of N one-dimensional edge channels, each contributing a conductance of e2/h. Here we report differential conductance measurements, in the integer quantum Hall regime, of tunnelling between the edges of a pair of two-dimensional electron systems that are separated by an atomically precise, high-quality, tunnel barrier. The resultant interaction between the edge states leads to the formation of new energy gaps and an intriguing dispersion relation for electrons travelling along the barrier: for example, we see a persistent conductance peak at zero bias voltage and an absence of tunnelling features due to electron spin. These features are unexpected and are not consistent with a model of weakly interacting edge states. Remnant disorder along the barrier and charge screening may each play a role, although detailed numerical studies will be required to elucidate these effects.     

A topological Dirac insulator in a quantum spin Hall phase

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi(1-x)Sb(x) single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher-dimensional analogues of the edge states that characterize a quantum spin Hall insulator. In addition to its interesting boundary states, the bulk of Bi(1-x)Sb(x) is predicted to exhibit three-dimensional Dirac particles, another topic of heightened current interest following the new findings in two-dimensional graphene and charge quantum Hall fractionalization observed in pure bismuth. However, despite numerous transport and magnetic measurements on the Bi(1-x)Sb(x) family since the 1960s, no direct evidence of either topological Hall states or bulk Dirac particles has been found. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy (IPEM-ARPES), we report the direct observation of massive Dirac particles in the bulk of Bi(0.9)Sb(0.1), locate the Kramers points at the sample's boundary and provide a comprehensive mapping of the Dirac insulator's gapless surface electron bands. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the 'topological metal'. They also suggest that this material has potential application in developing next-generation quantum computing devices that may incorporate 'light-like' bulk carriers and spin-textured surface currents.     

Emerging local Kondo screening and spatial coherence in the heavy-fermion metal YbRh2Si2

The entanglement of quantum states is both a central concept in fundamental physics and a potential tool for realizing advanced materials and applications. The quantum superpositions underlying entanglement are at the heart of the intricate interplay of localized spin states and itinerant electronic states that gives rise to the Kondo effect in certain dilute magnetic alloys. In systems where the density of localized spin states is sufficiently high, they can no longer be treated as non-interacting; if they form a dense periodic array, a Kondo lattice may be established. Such a Kondo lattice gives rise to the emergence of charge carriers with enhanced effective masses, but the precise nature of the coherent Kondo state responsible for the generation of these heavy fermions remains highly debated. Here we use atomic-resolution tunnelling spectroscopy to investigate the low-energy excitations of a generic Kondo lattice system, YbRh(2)Si(2). We find that the hybridization of the conduction electrons with the localized 4f electrons results in a decrease in the tunnelling conductance at the Fermi energy. In addition, we observe unambiguously the crystal-field excitations of the Yb(3+) ions. A strongly temperature-dependent peak in the tunnelling conductance is attributed to the Fano resonance resulting from tunnelling into the coherent heavy-fermion states that emerge at low temperature. Taken together, these features reveal how quantum coherence develops in heavy 4f-electron Kondo lattices. Our results demonstrate the efficiency of real-space electronic structure imaging for the investigation of strong electronic correlations, specifically with respect to coherence phenomena, phase coexistence and quantum criticality.     

Hybridization of electronic states in quantum dots through photon emission

The self-assembly of semiconductor quantum dots has opened up new opportunities in photonics. Quantum dots are usually described as 'artificial atoms', because electron and hole confinement gives rise to discrete energy levels. This picture can be justified from the shell structure observed as a quantum dot is filled either with excitons (bound electron-hole pairs) or with electrons. The discrete energy levels have been most spectacularly exploited in single photon sources that use a single quantum dot as emitter. At low temperatures, the artificial atom picture is strengthened by the long coherence times of excitons in quantum dots, motivating the application of quantum dots in quantum optics and quantum information processing. In this context, excitons in quantum dots have already been manipulated coherently. We show here that quantum dots can also possess electronic states that go far beyond the artificial atom model. These states are a coherent hybridization of localized quantum dot states and extended continuum states: they have no analogue in atomic physics. The states are generated by the emission of a photon from a quantum dot. We show how a new version of the Anderson model that describes interactions between localized and extended states can account for the observed hybridization.     

Superconductor-insulator transition in La2 - xSrxCuO4 at the pair quantum resistance

High-temperature superconductivity in copper oxides arises when a parent insulator compound is doped beyond some critical concentration; what exactly happens at this superconductor-insulator transition is a key open question. The cleanest approach is to tune the carrier density using the electric field effect; for example, it was learned in this way that weak electron localization transforms superconducting SrTiO(3) into a Fermi-glass insulator. But in the copper oxides this has been a long-standing technical challenge, because perfect ultrathin films and huge local fields (>10(9)?V?m(-1)) are needed. Recently, such fields have been obtained using electrolytes or ionic liquids in the electric double-layer transistor configuration. Here we report synthesis of epitaxial films of La(2-?x)Sr(x)CuO(4) that are one unit cell thick, and fabrication of double-layer transistors. Very large fields and induced changes in surface carrier density enable shifts in the critical temperature by up to 30?K. Hundreds of resistance versus temperature and carrier density curves were recorded and shown to collapse onto a single function, as predicted for a two-dimensional superconductor-insulator transition. The observed critical resistance is precisely the quantum resistance for pairs, R(Q) = h/(2e) = 6.45?kΩ, suggestive of a phase transition driven by quantum phase fluctuations, and Cooper pair (de)localization.     

Direct observation of Anderson localization of matter waves in a controlled disorder

In 1958, Anderson predicted the localization of electronic wavefunctions in disordered crystals and the resulting absence of diffusion. It is now recognized that Anderson localization is ubiquitous in wave physics because it originates from the interference between multiple scattering paths. Experimentally, localization has been reported for light waves, microwaves, sound waves and electron gases. However, there has been no direct observation of exponential spatial localization of matter waves of any type. Here we observe exponential localization of a Bose-Einstein condensate released into a one-dimensional waveguide in the presence of a controlled disorder created by laser speckle. We operate in a regime of pure Anderson localization, that is, with weak disorder-such that localization results from many quantum reflections of low amplitude-and an atomic density low enough to render interactions negligible. We directly image the atomic density profiles as a function of time, and find that weak disorder can stop the expansion and lead to the formation of a stationary, exponentially localized wavefunction-a direct signature of Anderson localization. We extract the localization length by fitting the exponential wings of the profiles, and compare it to theoretical calculations. The power spectrum of the one-dimensional speckle potentials has a high spatial frequency cutoff, causing exponential localization to occur only when the de Broglie wavelengths of the atoms in the expanding condensate are greater than an effective mobility edge corresponding to that cutoff. In the opposite case, we find that the density profiles decay algebraically, as predicted in ref. 13. The method presented here can be extended to localization of atomic quantum gases in higher dimensions, and with controlled interactions.     

A New Universal Class of Anderson Transition in Two-Dimensional Systems

Anderson localization of non-interacting two-dimensional electron gas(2DEG)with spin-orbit interactions and in a magnetic field is studied.There are strong numerical evidences that symmetry and dimensionality alone are not enough to classify the metal-to-insulator transition(MIT)for conventionally called symplectic class.By numerically studying the MIT of 2DEG on a square lattice with Rashba,Dresselhaus,or SU(2)spin-orbit interactions(SOI)     

量子围栏中金属表面态电子概率密度分布

量子围栏是以原子为材料在金属表面构成的闭合图案,由于电子具有波动性,因此,在量子围栏内可明显观察到二维电子概率驻波.文中以圆形和方形量子围栏为例,应用有限元数学方法,借助MATLAB数学软件,用计算机求解出被束缚在围栏中金属表面态电子相应于不同本征值的波函数及概率密度分布,与实验结果一致.该方法可方便求得处在任意形状势阱中的微观粒子波函数及概率密度分布情况,为定量研究电子被微观散射物散射产生的干涉现象提供新的手段.     

Experimental observation of the quantum Hall effect and Berry's phase in graphene

When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron-hole degeneracy and vanishing carrier mass near the point of charge neutrality. Indeed, a distinctive half-integer quantum Hall effect has been predicted theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction--a consequence of the exceptional topology of the graphene band structure. Recent advances in micromechanical extraction and fabrication techniques for graphite structures now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.     

硅烯电极材料的第一性原理计算

用第一性原理计算硅烯在N和S原子共掺杂时的能带及电子态密度, 并研究硅烯量子电容与不同掺杂构型间的关系. 结果表明: 引入N/S和N/B共掺杂原子可导致Fermi能级处产生局域态; 在-0.6~0.6 V内, 用NSS,NS,NBB,NNB和NB掺杂硅烯的量子电容均增加, 其中NSS掺杂单空位硅烯在Fermi能级附近, 其量子电容为43.9 μF/cm2, 量子电容增加明显.     

超晶格量子阱中束缚态的能级结构

超晶格是指由两种不同晶体材料交替生长的具有周期性结构的多层薄膜,两种材料的"势垒-势阱"结构就是量子阱.通过使用理想的无限深势阱模型和三角势阱模型,讨论了超晶格中单量子阱束缚态的能级结构和态密度,得到了体系的本征能量与本征函数的表达式.沿超晶格生长方向能量量子化,量子化能量构成了一系列子能带(微带),体系电子态密度与能量无关.     

单电子量子同心环的基态特性

给出了单电子量子同心环基态能量随其半径和势垒的变化规律, 并根据动力学和不确定关系对变化规律进行分析,  通过密度函数显示基态的电子几率分布. 结果表明, 即使基态能量小于势垒, 电子在势垒中的几率也不为零.     

Kondo effect in an integer-spin quantum dot

The Kondo effect--a many-body phenomenon in condensed-matter physics involving the interaction between a localized spin and free electrons--was discovered in metals containing small amounts of magnetic impurities, although it is now recognized to be of fundamental importance in a wide class of correlated electron systems. In fabricated structures, the control of single, localized spins is of technological relevance for nanoscale electronics. Experiments have already demonstrated artificial realizations of isolated magnetic impurities at metallic surfaces, nanoscale magnets, controlled transitions between two-electron singlet and triplet states, and a tunable Kondo effect in semiconductor quantum dots. Here we report an unexpected Kondo effect in a few-electron quantum dot containing singlet and triplet spin states, whose energy difference can be tuned with a magnetic field. We observe the effect for an even number of electrons, when the singlet and triplet states are degenerate. The characteristic energy scale is much larger than in the ordinary spin-1/2 case.     

Quantum phase transition from a superfluid to a Mott insulator in a gas of ultracold atoms.

For a system at a temperature of absolute zero, all thermal fluctuations are frozen out, while quantum fluctuations prevail. These microscopic quantum fluctuations can induce a macroscopic phase transition in the ground state of a many-body system when the relative strength of two competing energy terms is varied across a critical value. Here we observe such a quantum phase transition in a Bose-Einstein condensate with repulsive interactions, held in a three-dimensional optical lattice potential. As the potential depth of the lattice is increased, a transition is observed from a superfluid to a Mott insulator phase. In the superfluid phase, each atom is spread out over the entire lattice, with long-range phase coherence. But in the insulating phase, exact numbers of atoms are localized at individual lattice sites, with no phase coherence across the lattice; this phase is characterized by a gap in the excitation spectrum. We can induce reversible changes between the two ground states of the system.     

Observation of a quarter of an electron charge at the nu = 5/2 quantum Hall state

The fractional quantum Hall effect, where plateaus in the Hall resistance at values of h/nue2 coexist with zeros in the longitudinal resistance, results from electron correlations in two dimensions under a strong magnetic field. (Here h is Planck's constant, nu the filling factor and e the electron charge.) Current flows along the sample edges and is carried by charged excitations (quasiparticles) whose charge is a fraction of the electron charge. Although earlier research concentrated on odd denominator fractional values of nu, the observation of the even denominator nu = 5/2 state sparked much interest. This state is conjectured to be characterized by quasiparticles of charge e/4, whose statistics are 'non-abelian'-in other words, interchanging two quasiparticles may modify the state of the system into a different one, rather than just adding a phase as is the case for fermions or bosons. As such, these quasiparticles may be useful for the construction of a topological quantum computer. Here we report data on shot noise generated by partitioning edge currents in the nu = 5/2 state, consistent with the charge of the quasiparticle being e/4, and inconsistent with other possible values, such as e/2 and e. Although this finding does not prove the non-abelian nature of the nu = 5/2 state, it is the first step towards a full understanding of these new fractional charges.     

非正交定域分子轨道的研究(Ⅰ)─非正交定域分子轨道及其量子化学处理

本文应用投影算子方法，放弃了正变化条件的限制，成功地将ＣＨ４、Ｃ２Ｈ６、Ｃ２Ｈ４、Ｃ２Ｈ２分子的正则分子轨道实现了最佳定域化。借助所定义的非正交定域分子轨道的伴基，对非正交定域分子轨道进行了量子化学处理，推导出具有加和特性的电子Ｆｏｃｋ能量及电荷密度分布公式．并计算了键轨道电荷，所得结果与杂化轨道理论结果一致，为在非正交定域分子轨道基集下，计算力学量算符的平均值和电荷分布，以及研究分子的化学键电子结构和分子光谱问题，提供了简易可行的方法。     

Single-shot read-out of an individual electron spin in a quantum dot

Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel or anti-parallel to the field. This discreteness reflects the quantum mechanical nature of spin. Ensembles of many spins have found diverse applications ranging from magnetic resonance imaging to magneto-electronic devices, while individual spins are considered as carriers for quantum information. Read-out of single spin states has been achieved using optical techniques, and is within reach of magnetic resonance force microscopy. However, electrical read-out of single spins has so far remained elusive. Here we demonstrate electrical single-shot measurement of the state of an individual electron spin in a semiconductor quantum dot. We use spin-to-charge conversion of a single electron confined in the dot, and detect the single-electron charge using a quantum point contact; the spin measurement visibility is approximately 65%. Furthermore, we observe very long single-spin energy relaxation times (up to approximately 0.85 ms at a magnetic field of 8 T), which are encouraging for the use of electron spins as carriers of quantum information.