电沉积法制备Co-Pt合金薄膜的结构及其磁性能

采用酒石酸铵为络合剂,碱性溶液作为电解液沉积体系,利用电化学共沉积法在铜基底上制备得到了Co-Pt合金薄膜,并对制备得到的合金薄膜进行了不同温度的退火热处理。电化学极化曲线研究表明,酒石酸铵络合剂的加入有效地使两种金属离子沉积电位接近。原子吸收光谱研究表明,合金薄膜中金属成分比率易受电解液中金属离子比率和沉积电流密度的影响。X射线衍射(XRD)研究表明,电沉积制备得到的不同组分Co-Pt合金薄膜均为无序排列面心立方(fcc)结构,经过450?℃退火热处理后部分转变为L1₀型超晶格结构。磁性研究表明,经过450?℃退火热处理后的合金薄膜具有较好的磁晶各向异性。     

酸性镀液铝合金表面沉积Ni-Mo-P三元合金非晶镀层

采用酸性化学镀液在铝合金表面沉积Ni-Mo-P三元合金非晶镀层。利用透射电镜(TEM)、场发射扫描电镜(FESEM)、X射线衍射分析(XRD)、能谱(EDS)等现代分析手段,对镀层显微结构进行了表征,探讨了钼酸钠浓度和热处理对镀层纳米压痕硬度的影响。结果表明,镀态下,化学镀Ni-Mo-P三元合金镀层为致密非晶态镀层,镀层中Mo元素分布均匀,镀层与基体结合良好。热处理可促使非晶镀层晶化,产生Ni和Ni3P晶相,获得了纳米压痕硬度为15.12 GPa的最大值。     

基于磁过滤阴极真空弧沉积技术制备AlCrTiZrMo非晶高熵合金薄膜及其性能研究

基于磁过滤阴极真空弧沉积技术研究了负偏压对AlCrTiZrMo非晶高熵合金薄膜的形貌、元素以及微观结构的影响,进而讨论了AlCrTiZrMo非晶高熵合金薄膜的成膜及结晶机制．通过SEM、EDS、XRD和TEM对薄膜的形貌与结构等性能进行测试分析,实验结果表明:不同沉积离子能量条件下,薄膜具有优异的表面品质;随着沉积离子能量的不断增加,薄膜厚度随之减小;同时,沉积离子能量对高熵晶相的调控有明显效果,沉积离子能量的增加使AlCrTiZrMo高熵合金薄膜微结构从非晶相(am)转变为相稳定的am+FCC纳米复合结构．      

电沉积和硒化制备CuInSe2薄膜

以石墨为阳极、钛片为阴极,采用恒电流法制备Cu-In预制膜,然后硒化处理得到CuInSe2薄膜.分析了预制膜和CuInSe2薄膜的相组成及其影响因素.结果表明:采用不同的电沉积工艺,可以得到不同相组成的Cu-In预制膜.在保证Cu/In小于1的条件下,降低InCl3浓度和H3Cit/CuCl2浓度比,选择较高电流,可以获得具有CuIn相和Cu2In相的Cu-In预制膜.含有CuIn相和Cu2In相的Cu-In预制膜,经硒化得到的CuInSe2薄膜具有单一CuInSe2相组成,并且符合化学剂量比要求;而只含有CuIn相的预制膜硒化后除了有CuInSe2相外还出现了CuSe相.     

射频功率对硼碳氮薄膜的组分和厚度的影响

利用射频磁控溅射方法以不同的射频功率(80～130 W)在硅衬底上制备出一组硼碳氮(BCN)薄膜.傅里叶红外吸收光谱(FTIR)和X射线光电子能谱(XPS)测量发现样品的组成原子之间均实现了原子级化合.射频功率对薄膜的组分和厚度有很大影响,二者随射频功率的增大而呈规律性变化.B、N元素含量高、C元素含量低的硼碳氮薄膜较厚.并且,射频功率为110 W条件下制备的硼碳氮薄膜中C元素含量最低,薄膜最厚.     

Differenc es between amorphous indium oxide thin films

A series of 60~nm thick indium oxide thin-films,all amorphous as determined by x-ray diffraction,were found to have physical and electrical properties that depended on the temperature of deposition.The carrier mobility and flm conductivity decreased with decreasing deposition temperature;the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed.The density of the flm also decreased with deposition temperature from 7.2g/cm3 at+50℃ to 5.3g/cm3 at 100℃.     

脉冲电沉积制备非晶态Ni-Mo合金及析氢性能

电解水产氢具有原材料来源丰富、生产过程清洁、效率较高的优势,已经成为广泛研究的技术之一.通过脉冲电沉积技术,在不同的电流密度和占空比下,制备了不同的非晶态Ni-Mo合金镀层,研究了电流密度和占空比对镀层性能的影响.结果表明:随着占空比和电流密度的增大Mo含量减小,表面更加粗糙,在电流密度为2.5 A·dm^－2和占空比0.8下,可获得表面极为粗糙的非晶态Ni-Mo合金镀层,另外,占空比为0.6和电流密度为2.0 A·dm^－2下获得晶粒尺寸较小的合金镀层.粗糙表面结构的Ni-Mo合金在较大的过电位下表现出更好的析氢催化性能,而具有较高Mo含量和细小晶粒尺寸的合金镀层析氢催化活性较高.     

The preparation and characterization of amorphous SiCN thin films

Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N₂, SiH₄ and C₂H₄ as the reaction sources was used to prepare amorphous ternary Si _x C _y N _z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE _opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si₃N₄, SiC, CN _x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE _opt's of all samples are within the range of 2. 71–2. 86 eV. Foundation item: Supported by the National Natural Science Foundation of China (19975035) Biography: Li Jin-chai (1946-), male, Professor, research direction: novel functional materials films & ion beam modification of materials.     

氮气分压比对硼碳氮薄膜的组分及光学带隙的影响

采用射频磁控溅射方法以不同的氮气分压比(1/10～2/3)制备出一组硼碳氮薄膜.傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)测量发现样品的组成原子之间均实现了原子级化合.XPS测量结果表明,所有样品中的B、N原子比近似为1:1,其化学配比为BCx N(0.16＜x＜1.46).紫外/可见/近红外分光光度计用于测量样品的吸收光谱.由吸收谱线在低能区域(2.0～3.0 eV)的光吸收,利用关系作图法求出光学带隙Eopt范围为0.17～0.83 eV.氮气分压比对薄膜的组分和光学带隙有很大影响,其通过改变薄膜组分而影响光学带隙,并且碳原子数小的样品具有较宽的光学带隙.以氮气分压比为1/3条件下制备的样品中碳原子数最小,它的光学带隙最宽为0.83 eV.     

退火对非晶态碲镉汞薄膜稳定态光电导的影响

利用射频磁控溅射方法,在宝石衬底上制备了非晶态碲镉汞(a-HgCdTe)薄膜。对原生a-HgCdTe薄膜进行了不同退火时间和不同退火温度的热退火,在80～300K温度范围内,分别测量了原生和退火处理后的a-HgCdTe薄膜样品的稳定态光电导,研究了退火时间和退火温度对非晶态HgCdTe薄膜的稳定态光电导和激活能的影响。结果表明,原生和退火a-HgCdTe薄膜的稳定态光电导具有热激活特性;随着退火时间增加或退火温度升高,a-HgCdTe薄膜的晶化程度提高,导致光电导增大,光电导激活能降低。利用非晶-多晶转变机制讨论了实验结果。     

铝铅均质合金膜的制备与研究

利用磁控共溅射法制备Al-Pb合金薄膜.运用SEM、EDS、TEM对薄膜成分、结构进行分析,用分子动力学模拟薄膜中Al、Pb原子的聚集状态.结果发现铅含量影响着Al-Pb合金膜的结构,靶材中Pb的原子分数控制在4%范围内时,薄膜中Al和Pb在纳米级范围内可以实现均匀混合,得到均质合金膜.随着Pb含量的增加薄膜中Pb原子...     

Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition.Three different material compositions were investigated:ZITO-30,ZITO-50 and ZITO-70 in which 30％,50％ and 70％,respectively,of the...     

Microstructure and properties of hydrophobic films derived from Fe-W amorphous alloy

Amorphous metals are totally different from crystalline metals in regard to atom arrangement. Amorphous metals do not have grain boundaries and weak spots that crystalline materials contain, making them more resistant to wear and corrosion. In this study, amorphous Fe-W alloy films were first prepared by an electroplating method and were then made hydrophobic by modification with a water repellent (heptadecafluoro-1,1,2,2-tetradecyl) trimethoxysilane. Hierarchical micro-nano structures can be obtained by slightly oxidizing the as-deposited alloy, accompanied by phase transformation from amorphous to crystalline during heat treatment. The micro-nano structures can trap air to form an extremely thin cushion of air between the water and the film, which is critical to producing hydrophobicity in the film. Results show that the average values of capacitance, roughness factor, and impedance for specific surface areas of a 600℃ heat-treated sample are greater than those of a sample treated at 500℃. Importantly, the coating can be fabricated on various metal substrates to act as a corrosion retardant.     

脉冲偏压占空比对MgO薄膜成分及结构的影响

采用阴极真空电弧离子沉积技术在玻璃衬底上制备出了具有择优取向的透明MgO薄膜.利用卢瑟福背散射谱、X射线衍射仪、扫描电子显微镜及紫外-可见吸收光谱仪分别对MgO薄膜的成分、结构、表面形貌及可见光透过率进行了分析.结果表明:MgO薄膜具有(100)和(110)两种取向,且择优取向趋势不随占空比的变化而变化.随着占空比的增大,脉冲偏压为-150V时制备的MgO薄膜中Mg和O的原子含量之比逐渐增大,占空比为30%时,n(Mg)∶n(O)接近1∶1;SEM图表明,晶粒尺寸随着占空比的增大几乎没有发生明显的改变;在350～900nm范围内,MgO薄膜的可见光透过率可以达到90%以上.     

化学浴沉积法制备纳米氧化亚铜薄膜

用改进后的化学浴沉积法制备了纳米Cu2O薄膜,并对成膜条件及膜的性能进行了研究．结果表明：化学浴沉积法改进后有利于制备高质量的纳米Cu2O薄膜;最佳反应温度为60～70C,此温度范围内Cu2O薄膜的膜厚随着循环次数线性增加．制备的薄膜纯度较高．表面较平整和致密,Cu2O粒径为14～22nm,其禁带宽度为2．01eV．     

TaN膜的结构,成分及性能

研究了三极溅射法制备的ＴａＮ膜的结构、成分及其性能。实验发现：随着氮分压的增加，ＴａＮ膜的结构将从面心立方相转变为六方相；ＴａＮ膜的显微硬度在单一相结构时最大，而以双相共存时的显微硬度较低。     

二甲基甲酰胺中电沉积镁镍合金的研究

研究了二甲基甲酰胺(DMF)溶液中Mg(Ⅱ)和Ni(Ⅱ)在Pt和Cu电极上的电化学行为；用恒电位法沉积出有金属光泽、致密、附着力好的Mg-Ni合金膜，并用EDAX分析Mg-Ni合金膜组成，其中Mg含量可达26．07％(质量比)，用SEM分析膜表面形貌，用X-射线衍射（XRD)分析合金膜的形态为非晶态．     

Studies on Wear and corrosion resistances of carbon nitride thin films on Ti alloy

0　IntroductionArtificialarthrosiseshavebeenwidelyusedintheoperatorsclinicalsurgeriesforthepatientswhosearthrosiseswerese riouslyseverelydamaged.Butmostofartificialarthrosisescanon lybeusedforabouttenyearslongduetotheseriousabrasion .Forthisreason ,theimprovementofthelongevityofartificialarthrosisbecomesanimportantsubjectofstudy .TheartificialarthrosisesbeingmadeupofTialloyTC4(Ti 6Al 4V)andthepolythenewithultrahighmolecularweighthavegreatpotentialitiesonim provinglongevitybecauseTC4canreac…     

限流电阻对FeCuNbSiB非晶薄带磁感应效应的影响

研究限流电阻对Fe73.5Cu1Nb3Si13.5B9山非晶薄带的磁感应效应及磁感应效应变化幅度的影响。结果表明：非晶薄带的磁感应效应随着限流电阻的增大而减弱;当限流电阻小于100Ω时,非晶薄带的磁感应效应变化幅度随着限流电阻的增大而增大,当限流电阻大于100Ω时,非晶薄带的磁感应效应变化幅度随着限流电阻的增大而减小。     

SmTbCo/Cr非晶垂直磁化膜的制备及其组分影响研究

采用射频磁控溅射法在玻璃基片上成功地制备了(Sm)TbCo/Cr非晶垂直磁化膜,并就薄膜组分对其磁特性的影响进行了研究.部分Tb原子取代Sm以后,薄膜仍然具有较高的磁各项异性.薄膜组分为(Sm0.286 Tb0.714)31Co69/Cr时,其饱和磁化强度Ms为330 emu/cm3,矫顽力为5.0 KOe;薄膜组分为(Sm0.343Tb0.657)31 Co69/Cr时,其饱和磁化强度Ms为385 emu/cm3,矫顽力为4.7 KOe.薄膜组分对SmTbCo/Cr非晶垂直磁化膜的磁特性影响,可以通过对薄膜结构特性的分析得到合理的解释.