采用磁过滤MEVVA源制备DLC膜的研究

采用磁过滤MEVVA沉积技术以石墨为阴极在几种衬底表面(单晶硅、不锈钢和工具钢等)上制备高质量类金刚石(DLC)薄膜.实验结果表明,沉积能量对薄膜的sp3键含量的影响为先随能量的增加而增加,达到最大值后,再增加沉积能量含量反而下降.硬度测试结果表明,非晶金刚石薄膜具有极高的硬度,为70～78GPa,远远高于衬底材料的硬度值.对非晶金刚石薄膜的摩擦性能试验结果表明,非晶金刚石薄膜的摩擦因数为0.16～0.2,大大低于衬底材料.     

沉积偏压对2024铝合金表面类金刚石薄膜结构及性能的影响

利用等离子体增强化学气相沉积技术,在2024铝合金表面制备类金刚石(DLC)薄膜,以改善铝合金表面机械性能。利用拉曼光谱及红外光谱,对不同沉积偏压下制备DLC薄膜的成分及结构进行表征;利用摩擦磨损试验机、纳米压痕仪及台阶仪等,分别对不同沉积偏压下制备DLC薄膜的耐磨性、硬度、弹性模量及薄膜厚度进行检测,并探讨了沉积偏压对薄膜结构及性能的影响规律及影响机制。研究表明:随着沉积偏压增大(1 800～2 600 V),薄膜厚度、硬度及弹性模量均先增大后减小。当沉积偏压为2 400 V时,DLC薄膜厚度最厚,硬度及弹性模量最高。当沉积偏压为2 600 V时,薄膜的H/(Ef)最高,并且摩擦系数从基体的0.492降低至0.095 8。     

医用镁合金表面含氟类金刚石薄膜腐蚀行为研究

为了提高镁合金的表面硬度和耐蚀性,采用等离子体增强化学沉积技术在AZ31镁合金表面制备含氟DLC膜。研究了氟掺杂量对含氟DLC薄膜表面形貌、耐腐蚀性、疏水性和sp²键含量的影响,并探讨了相应的影响机理。结果表明,氟掺杂对AZ31镁合金表面DLC膜的组织和性能有显著影响。随着四氟化碳沉积时间增加,类金刚石薄膜的粗糙度减小,表面光滑;薄膜中的sp²杂化键逐渐增多;类金刚石薄膜的疏水性先增大后减小;当四氟化碳沉积时间为40 min时,类金刚石薄膜表现出优异的耐人体体液腐蚀特性。     

反应磁控溅射法制备的氟化类金刚石薄膜摩擦特性的研究

以高纯石墨做靶、CHF3/Ar为源气体采用磁控溅射法在不同射频功率条件下制备了氟化类金刚石(F-DLC)薄膜.利用原子力显微镜、纳米压痕、拉曼光谱、红外光谱和摩擦磨损测试仪对薄膜的表面形貌、硬度、键态结构以及摩擦学性能作了具体分析.测试结果表明,制备的薄膜整体较均匀致密,表现出了良好的抗磨减摩性能.当射频功率为120W时,薄膜的摩擦因数低至0.41左右.AFM和纳米压痕显示,薄膜摩擦因数受表面粗糙度和硬度影响,但并非成单调对应关系.拉曼和红外透射光谱表明,随着功率的增加,薄膜中的芳香环比例增加,sp3杂化含量减小,结果显示,CF2反振动强度的减弱和C—C链中较少量H原子的键入都可能得到相对较低的薄膜摩擦因数.     

激光场强分布对类金刚石薄膜激光损伤阈值的影响

采用非平衡磁控溅射技术,在双面抛光的硅基底上沉积了DLC薄膜,基于ISO11254-1损伤测试平台对DLC薄膜进行了损伤阈值测试;计算了DLC薄膜激光场强及温度场分布,对比了激光场强与损伤阈值的关系。计算结果显示:薄膜表面激光场强增大,DLC薄膜的激光损伤阈值变低;激光场强相等时,随着薄膜厚度增加,激光损伤阈值变小。分析认为:薄膜表面激光场强增大后,激光与DLC薄膜相互作用,产生的等离子体加剧薄膜对激光能量的吸收并产生热累积,激光场强诱导sp3杂化向sp2杂化转变,致使DLC薄膜发生石墨化,从而影响了DLC薄膜的激光损伤阈值。     

FCVAD合成Ta-C薄膜的Raman和XPS分析

用磁过滤阴极真空弧沉积（FCVAD）方法在Si衬底上合成了Ta-C薄膜,Raman光谱和光电子能谱（XPS）分析表明衬底加80-100V负偏压时合成的Ta-C薄膜sp^3键所占比例最高,可达80%以上,并且在Ta-C薄膜表面存在-sp^3键所占比例较低的薄层。     

Ti离子注入聚合物纳米结构分析

采用MEVVA源引出的Ti等离子注入聚酯 (PET)薄膜 ,注量在 1× 10 172× 10 17cm- 2 范围 .用透射电子显微镜分析了金属离子注入PET纳米结构随注量增加的变化 .结果表明 ,注入的Ti原子在PET中形成了密集的纳米相 ,这些纳米相均匀地弥散分布在注入层中 .用透射电子显微镜 (TEM )观察横截面表明 ,注入层为 3层结构 .可见Ti的注入已经在注入层中形成了金属化表面 .表面硬度、抗磨损特性和电导率明显地增加 .最后分析了金属离子注入对聚合物特性的改善机理 .     

磁过滤阴极真空弧法制备纳米nc—ZrCN／a—C：H（N）复合膜

采用磁过滤阴极真空弧法,以C2H2和N2混合气体为反应气体在单晶硅上沉积纳米nc-ZrCN/a-C:H(N)复合膜, 用X射线衍射(XRD)、扫描电镜的能谱仪(SEM-EDS)和X射线电子能谱(XPS)研究了薄膜的成分和结构.实验结果表明薄膜结构是由ZrCN晶粒镶嵌在无定形碳和碳氮化合物基体中;膜中的化合键主要以Zr-C, C=C(sp2)和C-C(sp3)形式存在;随着混合气体流量的增加,薄膜的锆原子分数减小,而N和C的原子分数逐渐增大.     

HIPIB烧蚀等离子体沉积DLC薄膜结构及性能

利用强流脉冲离子束(HIPIB)烧蚀等离子体在Si(100)基体上快速沉积类金刚石(DLC)薄膜．电压为250keV,柬流密度为250A／cm^2,脉宽为70ns的离子柬(主要由碳离子和氢离子组成)聚焦到石墨靶材上．使石墨充分电离产生稠密的烧蚀等离子体,在石墨靶的法线方向的Si基体上沉积出非晶的DLC薄膜,基片温度选择25℃和100℃,XPS分析显示DLC薄膜中sp^3C的含量达到40％．扫描电镜和原子力显微镜分析得知薄膜表面比较光滑,100℃时沉积的DLC薄膜的表面更光滑,表面粗糙度为0．927nm,其摩擦因数为O．10;TEM分析表明DLC薄膜的相结构是非晶的;X射线衍射分析得出薄膜的宏观残余应力为压应力,其大小约为4GPa．     

磁控溅射工艺中靶材溅射功率对BCMg薄膜性能影响

采用多靶磁控共溅射技术,利用高纯B、C及Mg单质靶材为溅射源,573K下在单晶Si(001)表面成功制备硬质非晶态BCMg薄膜.背散射扫描电镜(SEM)图显示薄膜成分均匀,与基体Si片结合良好.X射线光电子能谱(XPS)分析表明薄膜中存在B—B、B—C、C—Mg等键态.X射线衍射仪(XRD)及高分辨透射电镜(HRTEM)测试结果表明薄膜为非晶态结构.某单质靶材溅射功率提高时,沉积速率及相应元素在薄膜中的含量随之上升.随着薄膜中B含量增加,薄膜中B—B共价键数量增多,BCMg薄膜硬度与断裂韧性均上升.B含量为85%时,BCMg薄膜硬度及断裂韧性分别达到33.9GPa及3MPa·m1/2.     

Electrochemical Behaviour of Sputtering Deposited DLC Films

Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion bombardment on the surface of growing film is one of the major parameters that control the atom mobility on the film surface and further the physical and chemical characteristics of the films. In this study, the energy of carbon ions was monitored by changing sputtering power density, and its effect on the electrochemical performance of the films was investigated. For the deposition at a higher sputtering power density, a higher sp3 content in the DLC films was achieved with denser structure and increased film-substrate adhesion. The impedance at the interface of Si substrate/sulfuric acid solution was significantly enhanced, and at the same time higher film resistance, lower capacitance, higher breakdown potential and longer breakdown time were observed, which were related to the significant sp3 content of the DLC films.     

N离子注入非晶碳膜的CN成键研究

利用Raman和XPS研究N离子注入前后非晶碳膜化学键 合的变化及CN成键情况. 结果表明, 被注入到非晶碳膜内的N与C原子结合, 形成sp³C-N, sp² C-N 和C≡N键. 随着N离子注入剂量的增加, 膜内sp³ C-N键的含量相对增多, 表明N离子注入更有利于sp³ C-N键的形成.     

两种等离子体化学气相沉积制备类金刚石薄膜摩擦性研究

采用平行板电容耦合射频辉光放电化学气相沉积(RF-PECVD)装置,在镀有TiN/Ti过渡层的碳钢表面制备类金刚石膜(DLC),以及直接在基材表面制备掺氮的类金刚石膜,研究成膜内应力减小机理.通过对成膜表面的傅里叶变换红外光谱(FTIR)、激光Raman光谱、X射线光电子能谱(XPS)的测试,分析成膜表面的组分和微观结构对薄膜的性能影响.以薄膜表面摩擦因数的大小,初步评估试样的耐磨程度,研究α-C:H及α-C:H(N)薄膜的摩擦学性能与其结构的关系.     

Effect of thickness on structures of ultrathin diamond-like carbon films

Diamond-like carbon (DLC) films with different thickness were deposited by filtered cathode vacuum arc (FCVA). Vis-Raman and spectroscopic ellipsometry were employed to analyze the structure of DLC films. The wavelength of Vis-Raman is 514.5 nm. Experimental results show that structures of DLC films are affected by film thicknesses. When the film thickness increases from 2 to 30 nm, the G-peak position (G-pos) shifts to higher wavelength, the intensity ratio I_D/I_G and the extinction coefficient Ks decrease. It is indicated that the content of sp3 bond increases with film thickness. However, when the film thickness increases from 30 nm to 50 nm, I_D/I_G and Ks increase. The content of sp³ bonds decreases with film thickness.     

Molecular dynamics simulation of the deposition process of hydrogenated diamond-like carbon （DLC） films

The deposition process of hydrogenated diamond-like carbon （DLC） film greatly affects its frictional properties. In this study, CH3 radicals are selected as source species to deposit hydrogenated DLC films for molecular dynamics simulation. The growth and structural properties of hydrogenated DLC films are investigated and elucidated in detail. By comparison and statistical analysis, the authors find that the ratio of carbon to hydrogen in the films generally shows a monotonously increasing trend with the increase of impact energy. Carbon atoms are more reactive during deposition and more liable to bond with substrate atoms than hydrogen atoms. In addition, there exists a peak value of the number of hydrogen atoms deposited in hydrogenated DLC films. The trends of the variation are opposite on the two sides of this peak point, and it becomes stable when impact energy is greater than 80 eV. The average relative density also indicates a rising trend along with the increment of impact energy, while it does not reach the saturation value until impact energy comes to 50 eV. The hydrogen content in source species is a key factor to determine the hydrogen content in hydrogenated DLC films. When the hydrogen content in source species is high, the hydrogen content in hydrogenated DLC films is accordingly high.     

用慢正电子束测定类金刚石薄膜中的缺陷浓度

对在不同极板负偏压下采用射频-直流等离子体方法制备得到的类金刚石膜(a-C:H)的微结构进行了测量,利用慢正电子束实验装置,探测并分析了样品缺陷浓度的分布情况.结果表明,在不同偏压下制备的薄膜,其膜中缺陷浓度存在很大差别,但在900 V偏压下制得的样品,膜中的缺陷浓度最低.     

非晶碳氮薄膜的X射线光电子能谱研究

采用空心阴极等离子体化学气相沉积法,在甲烷一氨气、氢气混合气体体系下,制备出了非晶碳氮薄膜。利用原子力显微镜（AFM）及X射线光电子能谱（XPS）对薄膜的表面形貌、成分及微观结构进行了测试和表征。结果表明,薄膜的表面光滑、致密,均方根粗糙度小于0．5nm;薄膜中的氮含量随NH3（H2）流速的增加呈现降低的趋势,sp^2C—N及sp^3C—N键含量均随氮含量的增加而增加。     

衬底温度对磁溅射生长氮化碳薄膜的影响

通过非平衡磁溅射方法和改变衬底温度，在单晶Si（001）衬底上制备氯化碳薄膜材料．实验结果表明，氮化碳薄膜的沉积率、氮原子质量分数皆与衬底温度有关，薄膜中的氮原子与处于sp2和sp3杂化状态的碳原子相结合．随着衬底温度的改变，氮原子与处于这两种状态的碳原子结合的比例也发生改变．     

含氢类金刚石碳膜的拉曼光谱洛伦兹分解

利用射频等离子体增强化学气相沉积(rf PECVD)工艺在不锈钢基底上制备a-C:H膜,利用激光Raman光谱表征所沉积碳膜的微观结构,特别是通过对拉曼谱图进行洛伦兹分解来评价所沉积碳膜的sp3含量,分析了沉积电压和过渡层对a-C:H膜生长过程及膜中sp3含量的影响.结果表明,利用拉曼光谱的洛伦兹分解能够有效分析a-C:H的结构特性,碳膜沉积过程中沉积电压和过渡层对a-C:H膜的生长均具有重要影响.在本实验条件下,以Ti/TiN/TiC为过渡层沉积电压为2500 V时所制备的a-C:H膜中的sp3含量最高.