Density Functional Theory for the Response of Periodic Systems to Electric Fields Based on the Vector Potential Approach

Switchable molecular electronic devices,which are triggered by electrostatics interactions or UV light,have potential applications in data storage,drug delivery,cell culture,biosensor and tissue engineering.By using quantum chemical calculations and molecular dynamics(MD)simulations,we investigated the conformational change and switching process for several kinds of electro-controllable surface-supported molecular switches.The polarizable     

Self-assembled monolayer organic field-effect transistors

The use of individual molecules as functional electronic devices was proposed in 1974 (ref. 1). Since then, advances in the field of nanotechnology have led to the fabrication of various molecule devices and devices based on monolayer arrays of molecules. Single molecule devices are expected to have interesting electronic properties, but devices based on an array of molecules are easier to fabricate and could potentially be more reliable. However, most of the previous work on array-based devices focused on two-terminal structures: demonstrating, for example, negative differential resistance, rectifiers, and re-configurable switching. It has also been proposed that diode switches containing only a few two-terminal molecules could be used to implement simple molecular electronic computer logic circuits. However, three-terminal devices, that is, transistors, could offer several advantages for logic operations compared to two-terminal switches, the most important of which is 'gain'-the ability to modulate the conductance. Here, we demonstrate gain for electronic transport perpendicular to a single molecular layer ( approximately 10-20 A) by using a third gate electrode. Our experiments with field-effect transistors based on self-assembled monolayers demonstrate conductance modulation of more than five orders of magnitude. In addition, inverter circuits have been prepared that show a gain as high as six. The fabrication of monolayer transistors and inverters might represent an important step towards molecular-scale electronics.     

Manipulation of elementary charge in a silicon charge-coupled device

The ultimate limit in the operation of an electronic device is the manipulation of a single charge. Such a limit has been achieved in single-electron tunnelling devices. However, these devices are based on multiple tunnel barriers and conductive islands, which are complex structures to fabricate. Here we demonstrate another type of device that can also manipulate elementary charge, but which is more suitable for large-scale integration. The device consists of two closely packed silicon wire-MOSFETs, which are commonly used building blocks of electronic circuits. We have developed a scheme to generate and store holes in the channels of either of these MOSFETs. Subsequently, holes can be transferred between the two MOSFETs at the level of an elementary charge, and their exact position can be monitored. This single-charge transfer device, which is operated at 25 K, is in effect a charge-coupled device. This is also the first realization of a silicon-based device that manipulates elementary charge.     

基于PLECS的Boost电路热分析

电力电子器件热分析是当今电力电子技术研究的一个重要发展方向.该文以PLECS软件为平台,以Boost电路为对象,对开关器件进行热分析.借助于PLECS的热模块对开关器件的温度、开关损耗和导通损耗进行分析,提出一种新的热损耗分析方法,为实际器件选择和散热器设计提供参考.     

一种超低功耗模数转换器的设计与仿真

为了降低电子终端设备的功耗,文中提出了一种基于C-2C电容阵列DAC的超低功耗SAR ADC。首先,通过使用C-2C电容和三电平转换方案,文中的电容阵列DAC转换能耗相比传统结构降低99.41%,面积减少87.2%。接着,采用基于动态逻辑的逐次逼近寄存器（SAR）和两级全动态比较降低SAR ADC整体功耗。最后,SAR ADC在180nm CMOS工艺下进行设计与仿真。仿真结果表明:在1V电源电压,100kS/s的采样频率下,ADC的信噪失真比（SNDR）为61.59dB,有效位（ENOB）为9.93位,总功耗为0.188W,品质因素（FOM）值为1.9fJ/Conv.-step。文中设计的超低功耗SAR ADC适用于低功耗电子终端设备。     

气相苯丙氨酸手性转变基元反应过渡态的电子激发特征

用密度泛函理论(DFT)中的B3LYP方法, 在6-311+G(2df)基组水平上优化气相条件下苯丙氨酸(Phe)分子的几何构型, 分析Phe分子体系手性转变过程中各基元反应中间体和过渡态的特征, 在PBE0/def2-TZVP下, 用含时密度泛函理论(TDDFT)方法得到气相条件下Phe分子体系手性转变过程中某过渡态在电子激发过程中的激发态特性. 结果表明： 根据Δr指数和空穴-电子指数的电子激发特征判据, 可有效指认较明显的激发态特征, 并直接给出基元反应中过渡态分子体系激发特征的判断结果.     

气相苯丙氨酸手性转变基元反应过渡态的电子激发特征

用密度泛函理论(DFT)中的B3LYP方法, 在6-311+G(2df)基组水平上优化气相条件下苯丙氨酸(Phe)分子的几何构型, 分析Phe分子体系手性转变过程中各基元反应中间体和过渡态的特征, 在PBE0/def2-TZVP下, 用含时密度泛函理论(TDDFT)方法得到气相条件下Phe分子体系手性转变过程中某过渡态在电子激发过程中的激发态特性. 结果表明： 根据Δr指数和空穴-电子指数的电子激发特征判据, 可有效指认较明显的激发态特征, 并直接给出基元反应中过渡态分子体系激发特征的判断结果.     

IGBT电阻缝焊电源

本文介绍了采用电力电子器件IGBT（绝缘栅双极型晶体管）逆变器的电阻焊机．论述了焊机系统的组成、工作原理、开关控制电路及相关的保护装置．所研制的电阻焊机具有高效、节能、体积小、谐波污染低的特点     

碳化硅电力电子器件及其在电力电子变压器中的应用

随着“坚强智能电网”建设的不断深化以及“泛在电力物联网”概念的提出,硅基电力电子器件以及电力电子化装置正面临着新的挑战。以碳化硅基为代表的宽禁带功率半导体器件,因其高耐压、高耐温、高频开关等优良特性,在中高压领域前景广阔。其典型应用之一即因硅基器件耐压水平有限而难有突破的电力电子变压器。电力电子变压器除了能实现传统工频交流变压器的电压变换和电气隔离功能之外,还在故障切除、功率调控、分布式可再生能源接入等方面有独特优势。本文首先对碳化硅电力电子器件的研究与发展作简要概述,而后对电力电子变压器的发展进行了简单梳理。最后,重点介绍了几种典型的应用碳化硅器件的电力电子变压器,以便相关研究的进一步开展。     

双极性高频高压方波脉冲电源研究述评

为推动双极性高频高压方波脉冲电源的研究和发展,对双极性高频高压方波脉冲电源的应用领域和发展概况进行归纳。以固态电力电子开关器件为基础,总结了几种主要的技术实现方案并加以述评,以及对改善脉冲电源使用性能的相关技术进行了简要介绍。对现今依然存在的问题做出阐述,并对未来发展趋势进行了展望。