Luminescent and photovoltaic properties of poly（9,9-dioctylfluorene- co-bithiophene） in organic electronic devices

We studied the luminescent and photovoltaic properties of poly(9,9-dioctylfluorene-co-bithiophene)(F8T2) based on ITO/PEDOT:PSS/F8T2/Bphen/LiF(0 or 1 nm)/Al and ITO/PEDOT:PSS/F8T2:PCBM/Bphen/Al.A stable and bright yellow emission was obtained from polymer F8T2,and the electroluminescence power reached 45 ?W at a 15 V driving voltage.Polymer F8T2 shows a broad absorption band from 400 to 500 nm,and has a shorter absorption edge at about 560 nm compared to that of the typical electron donor P3HT(650 nm).The photoluminescence quenching of F8T2 occurs with only a small fraction of blended PCBM due to the effective exciton dissociation at the interface between F8T2 and PCBM.Polymer solar cells(PSCs) using F8T2:PCBM as the active layer show a low power conversion efficiency(PCE) of 0.10% with an open circuit voltage(Voc) of 0.91 V and short circuit current density(Jsc) of 0.23 mA/cm2.The PSCs using F8T2:P3HT:PCBM as the active layer have a Voc of 0.85 V and Jsc of 3.02 mA/cm2,improving the PCE by about 0.90%.We attribute the improved cell performance to the higher number of photons harvested by P3HT molecules.     

TiO<Subscript>2</Subscript>@MgO core-shell film: Fabrication and application to dye-sensitized solar cells

In this study,TiO2@MgO core-shell film was obtained by using a simple chemical bath deposition method to coat a thin MgO film around TiO2 nanoparticles. The core-shell configuration was characterized by X-ray diffractometer (XRD),scanning elec-tron microscopy (SEM),energy dispersive X-ray spectroscopy (EDX),and high-resolution transmission electron microscopy (HRTEM). Lattice fringes were observed for the TiO2 particles,and the MgO shell showed an amorphous structure,revealing a clear distinction between the core and shell materials. Applying the core-shell film as photoanode to the dye-sensitized solar cells (DSSCs),it shows a superior performance compared to the pure TiO2 electrode. Under the illumination of simulated sunlight (75 mW-cm-2),the short circuit photocurrent (Jsc),the open circuit photovoltage (Voc),and the fill factor (fF) are 8.80 mA-cm-2,646 mV,and 0.69,respectively,and the conversion efficiency (η) in-creased by 21.8% (from 4.32% to 5.26%) when dipping for opti-mum condition.     

Analysis of the characteristics of the harmonics coefficient <Emphasis Type="Italic">J</Emphasis><Subscript>2</Subscript> of the Earth’s gravity field in different periods

The characteristics of the geopotential coefficient J2 in different periods are analyzed using satellite laser ranging data spanning the last 27 years.The satellites used in the analysis are Lageos1 and Lageos2.The variations in J2 are obtained by determining the dynamic orbit.The results show that there are strong seasonal and long-term variations.For different data spans,the seasonal variations agree well in terms of both amplitude and phase.Using all the data,the amplitude and phase of the annual term are 2.5 10-10 and 127°,respectively,while the amplitude and phase of the semiannual term are 0.94 10-10 and 213°,respectively.In the case of long-term variation,the secular variation in J2(J2) is-2.2 10-11 a-1 from 1984 to 2010.J2 differs for the different periods because of interannual variations,such as the "1998 anomaly".Another anomaly may have taken place during 2007-2010.Although the cause of the anomaly is unknown,it is an important observational constraint on the shape of the Earth.     

A novel advanced oxidation process――wet electro-catalytic oxidation for high concentrated organic wastewater treatment

A novel advanced oxidation process——wet electrocatalytic oxidation (WEO) was studied with p-nitrophenol as model pollutant and β-PbO2 electrode as the anode. Compared with the effect of the individual wet air oxidation (WAO) and electrochemical oxidation (EO), the effect of WEO showed syn- ergistic effect on COD removal under the conditions of temperature 160℃, C=1000 mg·L-1, PN2=0.50 MPa, PO2=0.9 MPa, current density = 3 mA·cm-2, Na2SO4 3 g·L-1. And the synergistic factor got the best value of 0.98 within 120 min after 180 min treatment. The synergistic factor was studied after 120 min treatment at 100℃, 120℃, 140℃ and 160℃, and the effect of 120℃ was the best with the value of 1.26. Possible mechanism for the synergistic effect was discussed based on the analysis of free-radical generation and intermediates detected by HPLC and GC/MS.     

CeO2 thin films grown on biaxially textured nickel (001)

CeO\-2 films have been grown on biaxially textured Ni substrates at various temperatures. The results show that CeO\-2 films without IBAD are dominated by (111) orientation from room temperature to 800℃ while the preferential orientation of CeO\-2 films with IBAD is (001) at lower deposition temperature and (111) at deposition temperature higher than 450℃. CeO\-2 films with better in_plane texture and out_of_plane orientation can be grown at 360℃ with 240 eV ion energy and 200 μA/cm\+2 ion current density.     

Preparation and properties of C/C-SiC brake composites fabricated by warm compacted-<Emphasis Type="Italic">in situ</Emphasis> reaction

Carbon fibre reinforced carbon and silicon carbide dual matrix composites (C/C-SiC) were fabricated by the warm compacted-in situ reaction. The microstructure, mechanical properties, tribological properties, and wear mechanism of C/C-SiC composites at different brake speeds were investigated. The results indicate that the composites are composed of 58wt% C, 37wt% SiC, and 5wt% Si. The density and open porosity are 2.0 g·cm⁻³ and 10%, respectively. The C/C-SiC brake composites exhibit good mechanical properties. The flexural strength can reach up to 160 MPa, and the impact strength can reach 2.5 kJ·m⁻². The C/C-SiC brake composites show excellent tribological performances. The friction coefficient is between 0.57 and 0.67 at the brake speeds from 8 to 24 m·s⁻¹. The brake is stable, and the wear rate is less than 2.02×10⁻⁶ cm³·J⁻¹. These results show that the C/C-SiC brake composites are the promising candidates for advanced brake and clutch systems.     

Transformation character of ferrite formation by a ledge mechanism under a mixed-control model

A mixed-control model was developed to study the transformation character of ferrite formation by a ledge mechanism. A numerical two-dimensional diffusion-field model was combined to describe the evolution of the diffusion field ahead of the migrating austenite/ferrite interface. The calculation results show that the bulk diffusion-controlled model leads to a deviation from experimental results under large solute supersaturation. In the mixed-control model, solute supersaturation and a parameter Z together determine the transformation character, which is quantified by the normalized concentration of carbon in austenite at the austenite/ferrite interface. By comparing with experimental data, the pre-exponential factor of interface mobility, M₀, is estimated within the range from 0.10 to 0.60 mol·m·J-1·s-1 for the alloys with 0.11wt%-0.49wt% C at 700-740℃. For a certain Fe-C alloy, the trend of the transformation character relies on the magnitude of M 0 as the transformation temperature decreases.     

Temperature dependence of densities of Sb and Bi melts

The densities of Sb and Bi melts were investigated by an improved Archimedean method. The results show that the density of the Sb melt decreases linearly with increasing temperature,but the density of the Bi melt firstly increases and then decreases as the temperature increases. There is a maximum density value of 10.002 g/cm3 at 310 ℃ ,about 39℃ above the melting point. The temperature depend-ence of the Sb melt is well fitted with the expression ρ =6.8590-5.8105×10-4T,and that of the Bi melt is fitted with ρ =10.3312-1.18×10-3T. The results were discussed from a microstructure viewpoint.     

Fabrication of high quality strained SiGe on Si substrate by RPCVD

In this study,the growth kinetics of SiGe in a reduced pressure chemical vapor deposition system using dichlorosilane(SiH2Cl2) and germane(GeH4) as the Si and Ge precursors were investigated.The SiGe growth rate and Ge content were found to depend on the deposition temperature,GeH4 flow and reactor chamber pressure.The SiGe growth rate escalates with increasing deposition temperature,while the Ge content is reduced.The SiGe growth rate accelerates with increasing GeH4 flow,while the Ge content increases more slowly.According to the experimental data,a new relationship between Ge content(x) and F(GeH4)/F(SiH2Cl2) mass flow ratio is deduced:x2.5/(1x) = nF(GeH4)/F(SiH2Cl2).The SiGe growth rate and Ge content improve with increasing reactor chamber pressure.By selecting proper precursor flows and reactor pressure,SiGe films with the same Ge content can be fabricated at various temperatures.However,the quality of the SiGe crystals is clearly dependent on the deposition temperature.At lower deposition temperature,higher crystalline quality is achieved.Because the growth rate dramatically drops with lower temperatures,the optimum growth temperature must be a compromise between the crystalline quality and the growth rate.X-ray diffraction,Raman scattering spectroscopy and atomic force microscopy results indicate that 650°C is the optimum temperature for fabrication of Si0.75Ge0.25 film.     

Paleotemperature changes over the past 3000 years in eastern Beijing,China:A reconstraction based on Mg/Sr records in a stalagmite

The Mg/Sr ratio in a stalagmite,whic is directly proportinonal to DMg/Ca,the solid-liquid distribution coefficient of Mg,is proposed as a geochemical thermometer to estimate paleotemperature changes,The paleotemperature change in eastern Beijing over the past 3000 years has been reconstructed by using this thermometer in the stalagmite ZFFS-1 from Jingdong Cave,The records can be divided into two periods:3000-2000 aBP,cool and wet ,the air temperature averaging 9.8℃;and 2000aBP-present, hot and dry,the air temperature being 1℃ higher than the mean value (11.7℃) of the past 3000 years ,During 500-200 aBP,the air temperature was about 1.2℃ lower than that of the present,corresponding to the Little Ice Age Europe Like δ^18O and δ^C ,Mg/Sr (or DMg/Ca) reflects and obviously warming trend of the past 200 years,These results are supported by historic recods.     

Effect of substrate miscut on the electron mobility in InSb（001） structures on Ge and Ge-on-insulator substrates

InSb epilayers and InSb/Al0.20In0.80Sb quantum wells were grown on Ge(001)substrates and Ge-on-insulator(GeOI)-on-Si(001)substrates by molecular beam epitaxy.Growth on both on-axis and 4°-off-axis substrate orientations was studied.Anti-phase domains were formed when InSb films were grown on on-axis substrates,but suppressed significantly by the use of 4°-off-axis substrates.Such off-axis substrates also reduced the densities of micro-twin defects and threading dislocations.The defect reduction resulted in an increase in the room-temperature electron mobility from 37,000 to 59,000 cm2/Vs in 4.0-lm-thick InSb epilayers and from 10,000 to20,000 cm2/Vs in 25-nm-thick InSb quantum wells on Ge(001)and GeOI-on-Si(001)substrates.     

Microwave sintering of Ca<Subscript>0.6</Subscript>La<Subscript>0.2667</Subscript>TiO<Subscript>3</Subscript> microwave dielectric ceramics

Ca_0.6La_0.2667TiO₃ ceramics were prepared by conventional and microwave sintering techniques and their sinterability, microstructure, and microwave dielectric properties were investigated in detail for comparison. Densified Ca_0.6La_0.2667TiO₃ ceramics were obtained by microwave sintering at 1350°C for 30 min and by conventional sintering at 1450°C for 4 h. An unusual phenomenon was found that some larger grains (grain size range: 8–10 μm) inclined to assemble in one area but some smaller ones (grain size range: 2–4 μm) inclined to gather in another area in the microwave sintered ceramics. The microwave dielectric properties of Ca_0.6La_0.2667TiO₃ ceramics prepared by microwave sintering at 1350°C were as follows: dielectric constant (ɛ _r) = 119.6, quality factor (Qf) = 17858.5 GHz, and temperature coefficient of resonant frequency (τ _f) = 155.5 ppm/°C. In contrast, the microwave dielectric properties of the ceramics prepared by conventional sintering at 1450°C were ɛ _r = 117.4, Qf = 13375 GHz, and τ _f = 217.2 ppm/°C.     

High density methane inclusions in Puguang Gasfield: Discovery and a T-P genetic study

Based on measurement of homogenization temperature of inclusions and Raman spectral analysis, high density methane inclusions were discovered in the Triassic reservoirs of Puguang Gasfield. The methane inclusions show a homogenization temperature Th = -117.5― -118.1℃, a corresponding density of 0.3455―0.3477 g/cm3, and a Raman scatter peak v1 shift varying between 2911―2910 cm-1, which signifies a very high density of methane inclusions. The salt water inclusions paragenetic with methane inclusions show a homogenization temperature Th=170―180℃. Based on the composition of methane inclusions as determined by Raman spectra, PVTsim software was used to simulate the trapping pressure for high density methane inclusions in geologic history, and the trapping pressure was found to be as high as 153―160 MPa. Even though Puguang Gasfield is currently a gas pool of normal pressure, and the fluid pressure for the gas pool ranges between 56―65 MPa. However, data from this study indicates that remarkable overpressure may be generated at the stage of mass production of gas cracked from oils in Cretaceous, as high density methane inclusions constitute key evidence for overpressure in gas pool in geologic history. Meanwhile, discovery of small amounts of H2S, CO2 or heavy hydrocarbon in part of the high density methane inclusions indicates that the geochemical environment for trapping of inclusions may be related to formation of H2S. Therefore, the observation results can help to explore the thermochemical sulfate reduction （TSR） conditions for oil cracking and H2S formation.     

Vp of muscovite-biotite gneiss up to 950℃ at 400 MPa: Constraints on the origin of abnormal seismic layers in continental crust

Here we present experimental results of compressional wave velocity (Vp) of muscovite-biotite gneiss from Higher Himalayan Crystallines (HHC) at the temperature up to 950℃ and the pressure of 0.1―400 MPa. At 400 MPa, when the temperature is lower than 600℃, Vp decreases linearly with increasing temperature at the rate of (Vp/T)p -4.43×10-4 km/s ℃. In the temperature range of 600―800℃, Vp drops significantly and the signal is degraded gradually due to the dehydration of muscovite and α-quartz softening. When the temperature rises from 800℃ to 875℃, Vp increases and the signals become clear again as a result of the temperature going through the β-quartz range. The experiments indicate that the duration has great influence on the experimental results when temperature is above the dehydration point of biotite. During the first 30 h at 950℃, the Vp decreases substantially from 5.9 to 5.4 km/s and the signal amplitude is attenuated by more than 80%. After the 30-h transition, the Vp and the amplitude of ultrasonic wave signals become steady. The decrease of Vp and attenuation of the signals at 950℃ are associated with the breakdown reactions of biotite. The experiments suggest that the breakdown of muscovite and/or quartz softening can contribute to the low seismic wave velocity in thickened quartz-rich felsic-crust such as what is beneath southern Tibet. Additionally, α-β quartz transition generates a measurable high seismic velocity zone, which provides a possibility of precisely constraining the temperature in the upper-middle continental crust. Our study also demonstrates that duration is a key factor to obtain credible experimental results.     

Fabrication of the 19-filament Fe/Cu clad MgB2 wire via in situ powder-in-tube method

Using commercial amorphous B powder (92% in purity) and Mg powder (99% in purity) as starting materials, 19-filament Fe/Cu clad MgB2 wires were fabricated by an in situ powder-in-tube method. Heat treatment was performed at 700℃ for 1 h under an argon gas atmosphere. The influence of Mg/B ratio on the microstructure and superconducting properties of the wires was investigated. It was found that the major phases of MgB2 wires were MgB2 accompanied with relatively small amounts of MgO and Fe2B impurities. With 5% excess Mg addition, the onset TC slightly decreased. However, the transport JC at 4.2 K and 4 T reached 1.07×104 A·cm-2, increasing by a factor of 1.4 compared to the stoichiometric sample. Moreover, the Mg1.05B2 sample showed an improved field dependence of JC, suggesting that less voids and smaller grain size of the Mg1.05B2 core lead to better grain connectivity and stronger flux pinning.     

Fluorescence and sensitization performance of phenylene-vinylene-substituted polythiophene

A new kind of polythiophene derivative, Poly(3-{2-[4-(2-ethylhexyloxy)-phenyl]-vinyl}-2,2′-bithiophene) (PTh), was applied in dye-sensitized solar cell to extend the light response of nanocrystalline TiO2 electrode. UV-vis absorption and fluorescence spectra were employed to investigate the interaction of PTh with nanocrystalline TiO2. The absorption coefficient of the PTh was high in visible part of spec- trum, and the fluorescence emission of the PTh can be efficiently quenched by TiO2 nanoparticles ow- i...     

Dispersion of CoCl2 into γ-Al2O3 studied by positron

Co²⁺/γ-Al₂O₃ samples were prepared by incipient wetness impregnation of γ-Al₂O₃ with different concentration solution of CoCl₂ and dried at 40 °C. We measured the positron lifetime spectra of the samples of different Co²⁺ mass fractions (0%–8.24%) heated at different temperatures (100–500°C). All lifetime spectra were resolved into four components, in which the third and the fourth components were related to the surface state of the micropores and the secondary pores of the γ-Al₂O₃. The experimental results showed that the Co²⁺ was mainly located in the micropores and the secondary pores near to the exterior of the support. For low Co²⁺ mass fraction samples, when the heating temperature was above 400 °C, dispersal was almost finished. When the Co²⁺ mass fraction was above 5.59%, Co²⁺ and Cl⁻ were dispersed into the secondary pores in the form of multiple layers.     

Effects of synthetic conditions on the structure and morphology of open-ended vanadium oxide nanotubes and study of their growth mechanism

Vanadium oxide nanotubes (VOx-NTs) have been synthesized by using n-butylamine as structuredirecting template and V2O5 as precursor under hydrothermal conditions. XRD, FTIR, SEM, TEM, BET and TG-DTA characterizations have been performed to both optimize the synthetic conditions and understand the growth mechanism of VOx-NTs. The results showed that open-ended VOx-NTs were obtained under the optimized conditions (hydrothermal temperature: 150―160°C, hydrothermal time: 5―7 d, the molar ratio of V2O5 to n-butylamine is 1:1) with diameters ranging from about 30 to 100 nm and several micrometers in length. The BET surface area and the desorption cumulative pore volume of pores of the as-synthesized sample were about 27.4609 m2/g and 0.191087 cm3/g, respectively. The result presents that the synthesis of VOx-NTs is controlled by the "rolling" mechanism and temperature is primary driving force for rolling.     

I-V andC-V properties of TiO2 thin film by pulsed-laser reactive deposition

TiO-2 thin films have bee deposited on p-Si(111) substrates by pulsed-laser ablation of metallic Ti target in the O-3 ambient. The current-voltage and capacitance-voltage of the Al/TiO-2/Si capacitors are measured. The results show that the dielectric constant of thin film after being annealed at 700℃ is found to be 46, and the border trap density and the interface state density at the TiO-2/p-Si interface are 1.8×10 12 cm -2 and 2×10 12 eV -1·cm -2, respectively. The conduction mechanisms of as-deposited films are also discussed.     

High quality p-type ZnO film growth by a simple method and its properties

P-type ZnO：N films have been grown successfully by chemical vapor deposition （CVD） using Zn4（OH）2（O2CCH3）6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrete temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of ＋5.127×10^17 cm^-3, resistivity of 0.04706 Ω· cm and Hall mobility of 259 cm^2/（V·s）; they still exhibited p-type conduction after a month. When the substrate temperature was too high, the film was transformed from p-type to n-type conduction.