Field emission of SiCN thin films bombarded by Ar<Superscript>+</Superscript> ions

SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P-type Si (1 0 0) wafers using C₂H₄, SiH₄ and N₂ as raw materials, In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar⁺ ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar⁺ bombardment were studied in the super vacuum environment of 10⁻⁶ Pa. It was showed that the turn-on field (defined as the point where the current-voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm². The composition before and after Ar⁺ bombardment was compared using X-ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar⁺. Foundation item: Supported by the National Natural Science Foundation of China (19975035) Biography: Ma You-peng (1978), male, Master candidate, research direction: novel functional materials film and ion beam modification of materials.     

氮化硼薄膜的厚度对场发射特性的影响

利用射频磁控溅射方法, 在n型（100）Si基底上沉积了不同厚度（54~124 nm）的纳米氮化硼（BN）薄膜. 红外光谱分析表明, BN薄膜结构为六角BN（h-BN）相(1 380 cm^-1和780 cm^-1)结构. 在超高真空系统中测量了不 同膜厚的场发射特性, 发现阈值电压随着厚度的增加而增大. 厚度为54 nm的BN薄膜样品阈 值电场为10 V/μm, 当外加电场为23 V/μm时, 最高发射电流为240 μA/cm². BN薄膜场发射F-N曲线表明, 在外加电场作用下, 电子隧穿了BN薄膜表面势垒发射到真空.     

基底温度对氮化硼薄膜场发射特性的影响

利用射频磁控溅射方法, 真空室中充入高纯N_{2(99.99%)和高纯Ar（99.99%）的混合气体, 在n型（100）Si基底上沉积了六角氮化硼（h-BN）薄膜. 在超高真空（<10^-7 Pa）系统中测量了BN薄膜的场发射特性, 发现 沉积时基底温度对BN薄膜的场发射特性有很大影响. 基底温度为500 ℃时沉积的BN薄膜样品场发射特性要好于其他薄膜, 阈值电场为12 V/μm, 电场升到34 V/μm, 场发射电流为280 μA/cm². 所有样品的Fowler-Nordheim(F-N)曲线均近似为直线, 表明电子是通过 隧道效应穿透BN薄膜发射到真空的.}     

Silicon Field Emission Arrays Coated with CN_x Thin Films

0　IntroductionThefieldemissiondisplay (FED) ,whichhasthebenefitsofbothliquidcrystaldisplays (LCDs)andcathoderaytube(CRT)display ,isregardedasaperfectchoiceforthefuturedis plays.Ithasacompactsize,alargeviewingangle,excellentbrightnessandhighpicturequality[1 ] .Thefieldemissionarrays(FEAs) ,whichareformedofarraysofmicro tips,arewidelyusedasthesourceofelectroninFED .Thetopofthetipiswherethestrongestelectricfieldis.Itisalsowheremostoftheemissionelectronscomefrom .Thismadeitpossibleto putel…     

两步法制备性能优良的ZnO纳米线

利用热蒸发和溶液浸泡两步法制备了性能优良的ZnO纳米线,研究了这些ZnO纳米线的光致发光和场发射特性.与直接采用热蒸发方法生长的ZnO纳米线相比,由该方法得到的ZnO纳米线表现出了更好的紫外发光特性,同时发生5 nm的蓝移,场发射测试表明其开启电场和阈值电场分别达到2.3 V/μm和6.8 V/μm.该方法适用于制备光致发光和场发射性能优良的ZnO纳米线.     

Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics

We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube(CNT) film during its intense pulsed emission.We synthesize the CNT film on a tridimensional surface(t-CNT film).The tridimensional surface includes wet etched silicon pyramids,and the Ni layer is electroless plated thereon.The intense pulsed emission characteristics of the t-CNT and planar-grown CNT(p-CNT) films were measured using a diode structure in single-pulse mode.The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/m for t-CNTs,and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ～12.2 V/m.The peak current of the t-CNT film increased by ～39.7% over the p-CNT film.It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.     

金刚石薄膜的制备、表征和场发射性能

系统研究了在微波等离子体化学气相沉积(MPCVD)系统中,甲烷浓度、沉积气压、气体流量比、衬底的预处理等参数工艺对金刚石薄膜质量的影响,不同样品的扫描电镜(SEM)图片表明上述参数工艺对金刚石薄膜的微观形貌如:晶粒尺寸、均匀性、膜的连续性、致密性等具有重要影响.金刚石薄膜样品尖锐的1332cm-1Raman峰表明金刚石膜具有很高的晶化质量,与SEM图片一致.最后研究了样品的场发射特性,获得了较低的发射阈值电压4.4V/μm,电压为650V时,得到较高的约128mA/cm2的发射电流密度.     

Simple method to rapidly fabricate chain-like carbon nanotube films and its field emission properties

A simple process to fabricate chain-like carbon nanotube (CNT) films by microwave plasma-enhanced chemical vapor deposition (MPCVD) was developed successfully. Prior to deposition, the Ti/Al₂O₃ substrates were ground with Fe-doped SiO₂ powder. The nano-structure of the deposited films was analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The field electron emission characteristics of the chain-like carbon nanotube films were measured under the vacuum of 10-5 Pa. The low turn-on field of 0.80 V/μm and the emission current density of 8.5 mA/cm2 at the electric field of 3.0 V/μm are obtained. Based on the above results, chain-like carbon nanotube films probably have important applications in cold cathode materials and electrode materials.     

Silicon field emission arrays coated with CN<Subscript>x</Subscript> thin films

Arrays of silicon micro-tips were made by etching the p-type (1 0 0) silicon wafers which had SiO₂ masks with alkaline solution. The density of the micro-tips is 2×10⁴ cm⁻². The Scanning Electron Microscope (SEM) photos showed that the tips in these arrays are uniform and orderly. The CN_x thin film, with the thickness of 1.27 μm was deposited on the silicon micro-tip arrays by using the middle frequency magnetron sputtering technology. The SEM photos showed that the films on the tips are smoothly without particles. Keeping the sharpness of the tips will benefit the properties of field emission. The X-ray photoelectron spectrum (XPS) showed that carbon, nitrogen and oxygen are the three major elements in the surfaces of the films. The percents of them are C: 69.5%, N: 12.6% and O: 17.9%. The silicon arrays coated with CN_x thin films had shown a good field emission characterization. The emission current intensity reached 3.2 mA/cm² at 32.8 V/μm, so it can be put into use. The result showed that the silicon arrays coated with CN_x thin films are likely to be good field emission cathode. The preparation and the characterization of the samples were discussed in detail. Foundation item: Supported by the National Natural Science Foundation of China (19975035) Biography: Chen Ming an (1978-), male, Ph. D candidate, research direction: novel functional materials film and ion beam modification of materials.     

碳纳米管/纤维阴极场发射平板显示器研制

探索了从碳纳米管/纳米纤维（CNT/CNF）的制备到CNT/CNF阴极场发射平面显示器(c-FED)封装的工艺流程.用化学气相沉积方法,优化制备条件获得了纯度较高的CNT/CNF;以 CNT/CNF和低压荧光粉为原料,采用丝网印刷工艺制作显示器的阴极和阳极;采用类真空荧光显示器的封装工艺封装了c-FED样管.所研制的c-FED具有优良的场发射性能,较好的均匀性及发光密度,黄色荧光粉的c-FED在电场为 2.7 V/μm时的亮度可达600 cd/m².因该显示器使用普通玻璃作为阴阳极基板,整个工艺流程在大面积和实用化方面有很好的应用潜力.      

基底偏压对氮化硼薄膜场发射特性的影响

利用射频磁控溅射方法, 在n型（100）Si（0.008～0.02 Ω·m）基底上沉积了氮化 硼（BN）薄膜. 红外光谱分析表明, BN薄膜结构均为六角BN（h-BN）相. 在超高真空系统中 测量了BN薄膜的场发射特性, 发现BN薄膜的场发射特性与基底偏压关系很大, 阈值电场随基 底偏压的增加先增加后减小. 基底偏压为-140 V时BN薄膜样品场发射特性要好于其他样品, 阈值电场低于8 V/μm. F~N曲线表明, 在外加电场的作用下, 电子隧穿BN薄膜表面势垒发射 到真空.     

Studies on Wear and corrosion resistances of carbon nitride thin films on Ti alloy

0　IntroductionArtificialarthrosiseshavebeenwidelyusedintheoperatorsclinicalsurgeriesforthepatientswhosearthrosiseswerese riouslyseverelydamaged.Butmostofartificialarthrosisescanon lybeusedforabouttenyearslongduetotheseriousabrasion .Forthisreason ,theimprovementofthelongevityofartificialarthrosisbecomesanimportantsubjectofstudy .TheartificialarthrosisesbeingmadeupofTialloyTC4(Ti 6Al 4V)andthepolythenewithultrahighmolecularweighthavegreatpotentialitiesonim provinglongevitybecauseTC4canreac…     

碳化硅薄膜制备及其场发射特性

采用热丝化学气相沉积法在Si（111）、Ti（101）衬底上制备了SiC薄膜,并利用X射线衍射和傅里叶变换红外吸收光谱（FTIR）对薄膜的结构、成分及化学键合状态进行了分析．XRD结果表明,制备的SiC薄膜呈现3C-SiC结晶相,有很好的择优取向性．HIR谱显示,薄膜的吸收特性主要为Si-C键的吸收,其吸收峰为804．95cm^-1．从原子力显微镜对SiC薄膜表面形貌的测试分析可以看出,样品表面呈规则精细颗粒状结构且薄膜结构致密．此外,在高真空系统中（6．0×10^-4Pa）对生长的SiC薄膜进行场敛发射特性测试,结果表明生长的SiC薄膜具有场致发射特性：样品的开启电压为82．1V／μm,最大电流密度为631．5μA／cm^2．     

四针状纳米氧化锌的制备及其场致发射特性的研究

对利用高温气相氧化法制备四针状纳米氧化锌进行了研究,实验表明：制备炉的温度对样品的性能影响较大,温度低于800℃,短时间内得不到明显的反应产物,温度高于1 000℃,白雾状产物也有所下降,最佳反应温度约为900℃。样品具有优良的场发射特性,开启电场仅为1.6 V/μm。获得1.0 mA/cm^2的电流密度也只需要4.5 V/μm的电场。     

Field Emission Characterization of 1D-Nanostructural ZnO Grown at Low Temperature

Ondeu-ctdio rmse nhsaivoen aaltt rwaicdteed b aan gdr-egaatp d neaaln oosft uartctteunrtialon se bmeiccaounse-of their remarkable physical and chemical properties[1 ,2].Amongthose properties ,the highaspect ratio of these materi-als makes them genuine can…     

N-掺杂石墨烯薄膜的超电容性质研究

采用自组装/源位还原法相结合制备了自支撑褶皱N-掺杂石墨烯薄膜。运用场发射扫描电镜、X射线粉末衍射和光电子能谱仪等表征手段对所制备的韧性薄膜进行了表征。电化学性能测试表明所制备的N-掺杂石墨烯薄膜具有良好的超电容特性:在1 A/g的电流密度下,其比容量为210 F/g;当电流密度增加10倍时,仍然具有初始容量的71.0%。在5 A/g的电流密度下循环1 000次后比容量值为原来的95.3%。     

胶体石墨涂层的平面场发射特性研究

研究了胶体石墨涂层的场发射特性。测得其相应于10μA/cm²场发射电流密度的开启场强为5.4V/μm,相应于1mA/cm²场发射电流密度的阈值场强为8.8V/μm。扫描电子显微镜观察表明场发射应该来自细小石墨碎片的尖锐边缘。通过计算估计出这些尖锐边缘处的场强比阴阳极之间的平均场强增加了大约4×10²倍。     

Enhanced Field Emission from Printed Carbon Nanotubes by Hard Hairbrush

A method, the morphology of screen printed carbon nanotube pastes is modified using a hard hairbrush, is presented. In this way, the organic matrix material is preferentially removed. Compared to those untreated films, the turn-on electric field of the treated film decreases from 2.2V/μm to 1.6V/μm, while the total emission current of the treated increases from 0.6mA/cm2 to 3mA/cm2, and uniform emission site density image has also been observed.     

氮离子轰击改善胶体石墨薄膜平面场发射特性的研究

研究了氮离子(N⁺)轰击对石墨薄膜场发射特性的影响。片层石墨被N⁺轰击成较整齐排列的锥尖阵列,尖端密度～10⁸cm^-2。XPS谱证实有许多N原子注入薄膜,膜内存在大量sp²杂化轨道键。场发射测试表明,经过N⁺轰击,整个薄膜在场发射的均匀一致性方面有较明显的改善,场发射电流密度从0.3增大到1.65mA/cm²。     

离子注入对多晶金刚石薄膜场发射特性影响的研究

对等离子增强化学气相淀积多晶金刚石薄膜在Ｎ离子注入前后的场发射特性进行研究。研究发现,同一工艺条件下的淀积的多晶金刚石薄膜样口的发展射特性在离子注入前有较大的差异,离子注入后金刚石石薄膜场发射特性的差异基本上得到消除,而且在高场下发射电流密有一定程度的提高,场发射特性得到较大改善。