多量子阱垒结构优化提高GaN基LED发光效率研究

为了解决由于极化效应引起的漏电流影响发光效率的问题,以k.p理论为基础建立多量子阱模型,分析研究了GaN基LED中不同的InGaN/InGaN多量子阱发光层势垒结构.基于化合物半导体器件的电学.光学和热学属性的有限元分析,设计与优化多量子阱中靠近P型AIGaN电子阻档层倒数第二层势垒,显著提高了光输出功率,减少漏电流.数值模拟分析表明,改良多量子阱势垒能够大幅提高高亮度,高功率器件结构光电特性.     

双层结构微波纳米振荡器件的振荡特性调控

针对由垂直磁化和面内磁化的CoPtCr合金组成的双层结构微波纳米振荡器件,本文利用微磁模拟软件OOMMF研究了其在电流驱动下的振荡特性,并提出了不同的纳米柱阵列结构以提高振荡器整体的功率输出。结果表明,纳米柱截面尺寸保持不变,当面内磁化区域的厚度超过20 nm时,其对双层纳米柱产生的振荡频率不再影响,振荡振幅则随厚度的增加而继续增大。本文提出了平行四边形结构排列的双层纳米柱阵列,各纳米柱之间锁相情况较好,在电流密度为3.89×10~(11) A/m~2的驱动下,纳米柱阵列整体产生的振荡振幅为单个纳米柱产生振幅的3.6倍左右。     

新型LED红色荧光材料Ca_xSr_(1-x-y-z)MoO_4:yEu~(3+);zNa~+的制备和表征

利用Na+为电荷补偿剂制备CaxSr1-x-y-zMoO4:yEu3+,zNa+红色LED荧光粉体.研究了电荷补偿剂的用量、基质材料中Ca2+的含量、合成温度、反应时间及发光中心Eu3+摩尔分数对荧光材料晶体结构和发光性能的影响.结果表明:最佳工艺条件为电荷补偿剂摩尔分数为6%,Eu3+摩尔分数为8%,Ca2+摩尔分数为60%,反应温度900℃和反应时间2 h.光谱测试结果表明,该荧光材料可被311,395或465 nm有效激发,发射峰在616 nm.     

Phase-locking in double-point-contact spin-transfer devices

Spin-transfer in nanometre-scale magnetic devices results from the torque on a ferromagnet owing to its interaction with a spin-polarized current and the electrons' spin angular momentum. Experiments have detected either a reversal or high-frequency (GHz) steady-state precession of the magnetization in giant magnetoresistance spin valves and magnetic tunnel junctions with current densities of more than 10(7) A cm(-2). Spin-transfer devices may enable high-density, low-power magnetic random access memory or direct-current-driven nanometre-sized microwave oscillators. Here we show that the magnetization oscillations induced by spin-transfer in two 80-nm-diameter giant-magnetoresistance point contacts in close proximity to each other can phase-lock into a single resonance over a frequency range from approximately <10 to >24 GHz for contact spacings of less than about approximately 200 nm. The output power from these contact pairs with small spacing is approximately twice the total power from more widely spaced (approximately 400 nm and greater) contact pairs that undergo separate resonances, indicating that the closely spaced pairs are phase-locked with zero phase shift. Phase-locking may enable control of large arrays of coupled spin-transfer devices with increased power output for microwave oscillator applications.     

基于量子点白光LED的可见光通信系统

针对目前可见光通信( VLC: Visible Light Communication) 系统中存在的光源照明效果差和效率低的问题,提出了以量子点白光发光二极管( QDs-WLED: Quantum Dots White Light Emitting Diode) 作为VLC 系统的光源,并以此设计了一套便携式点对点VLC 收/发终端。采用一步合成法合成了峰值在570 nm 高稳定性、高量子效率的核壳硒化镉( CdSe) 量子点材料,其量子产率达到81%。将该量子点材料取代传统的荧光粉材料,与环氧树脂混合后涂到蓝光LED( Light Emiting Diode) 芯片上制成白光LED 器件,并测试了其发光光谱、色坐标图和流明效率。然后阐述了VLC 系统的结构和原理,并编写了通信软件和制定了相关协议,实现了系统的软硬件集成,利用所研制的VLC 系统,开展了通信实验。实验结果表明,QDs-WLED 除了拥有出色的照明效果和节能特性外,也能实现数据传输的功能。在选择最佳直流偏置电压2． 70 V 的情况下,系统的最大通信距离为1． 3 m,可达到的最大通信速度为267 kbit /s,误码率( BEＲ: Bit Error Ｒatio) 小于10 ^{－ 3}。     

新型顶发射有机电致白光二极管的研究

为了提高顶发射白光有机发光二极管(top-emitting white organic light-emitting diodes,TWOLEDs)色谱稳定性，对一种拥有Ag反射镜的新型双蓝光发光单元顶发射器件展开研究，发现结构为Ag/Glass/ITO/MoO₃(5nm)/TAPC(30nm)/TCTA(5nm)/Firpic:TCTA(10%,20nm)/Firpic:TmPyPb(10%,10nm)TPBi(30nm)/LiF(1nm)/Al(0.8nm)/Ag(22nm)/Alq₃(50nm)的蓝光器件具有最佳光电性能，其最高电流效率可以达到9.76cd·A^-1。基于该结构，结合DCJTB荧光染料制备的颜色转换层实现顶发射白光器件。结果表明，当颜色转换层DCJTB浓度为2.5%时，获得了电流效率为2.45cd·A^-1，CIE色坐标为(0.338,0.337)以及显色指数CRI为72的TWOLEDs，器件微腔效应较弱且光谱随电流密度与观测角度改变仅有微弱变化。     

Emission characteristics of surface second-order metal grating distributed feedback semiconductor lasers

To obtain high-power semiconductor lasers with stable operation in a single longitudinal mode and improve the characteristics of the output beam,an end-emitting surface second-order metal grating distributed feedback(DFB) laser emitting at around 940 nm is fabricated.The characteristics of the uncoated devices with and without gratings are tested under room temperature continuous-wave conditions without any temperature-control device and compared.The devices with gratings achieve high powers of up to 385 mW/facet and a small lateral far-field angle of 2.7° at 1.5 A,have only 4.13 nm/A wavelength-shift,and 0.09 nm spectral linewidth at 600 mA,and operate in a stable longitudinal mode.Devices without gratings operate in multimode,with a larger lateral far-field angle(7.3°) and spectral linewidth(1.3 nm),although with higher output powers.Because of the integration of second-order metal gratings and their very high coupling capability,the output beam quality is improved greatly,the lasing wavelength is stable and varies slowly with changes in injection current,while the spectrum is narrowed dramatically,and the far-field angles are greatly reduced.This opens the way for the realization of watt-scale power broad-stripe(>100 μm) surface second-order metal grating end and surface-emitting DFB lasers and arrays with single frequency,single mode operation and high output beam quality.     

LED汽车前照灯有源纹波补偿Buck型恒流驱动电源

针对一般照明LED驱动电源中输出滤波电解电容的寿命与LED的长寿命极不匹配的问题. 提出了一种有源纹波补偿的Buck型LED驱动电路. 电路中用有源纹波补偿支路替代输出滤波电解电容,抵消电感纹波电流,使LED灯组获得恒定直流,达到LED的理想驱动状态. 为了减小纹波补偿支路的损耗,必须控制电感电流的峰值和谷值,滞环电流控制可有效地满足这个要求. 设计和制作了输出功率为30 W的滞环电流控制、有源纹波补偿BUCK型LED驱动电源. 仿真和实验验证了上述新型电源的可行性.      

有限元分析下的大功率LED 灯优化热设计

为解决LED(Light-Emitting Diode)因功率过低而使其寿命受限的问题, 对现有的LED 轨道灯的散热器结构及驱动电路进行了改进与优化设计。设计以图形用户界面应用程序Ansys 作为开发平台, 通过Gambit 剖分以及温度场Fluent 仿真实现了LED 轨道灯的优化热设计。同时, 以50 W 功率的LED 热分布模型为例, 给出了LED 温度分布机制和温度场分析的解析模式及其理论公式推导、实验数据测量和仿真场图分析。研究结果表明, 该新型LED 优化热设计在提高LED 功率(从30 W 提高到50 W)的同时使温度从80 益降低到76 益, 从而提高了灯具的使用寿命, 改善了照明效果。     

两种芳胺基团修饰的螺二芴衍生物在有机电致发光材料及荧光探针中的应用

通过在螺二芴上引入芳胺基团制备出两种全新的螺二芴衍生物SPF-1和SPF-2.化合物SPF-1能够通过荧光强度检测有机溶剂中的含水量.其中,SPF-1在1,4-二氧六环中对水的检测限达到0.018％,在四氢呋喃（THF）中对水的检测限达到0.049％,结果优于大多数文献的报道.另外,SPF-1和SPF-2都可用作有机电致发光（EL）器件的发射层材料.SPF-1制备的器件在506 nm附近有强的发射峰,色度坐标为（0.24,0.48）;SPF-2制备的器件在471 nm和502 nm处有较强发射,色度坐标为（0.31,0.54）.两个器件都具有低开启电压、高热稳定性等优异性能.其中SPF-1的最大亮度、最大电流效率和最大功率效率分别为1 653 cd·m^-2,2.55 cd·A^-1和1.23 lm·W^-1,SPF-2的最大亮度、最大电流效率和最大功率效率为是1 660 cd·m^-2,2.1 cd·A^-1和1.28 lm·W^-1.     

Yb3+-doped large-mode-area photonic crystal fiber laser with 210 W continuous-wave output power

An Yb^3＋-doped double-clad large-mode-area photonic crystal fiber （LMA PCF） laser with up to 210 W of continuous-wave output power centered at 1.05 lira is demonstrated. The length of the fiber used is 2 m and the produced laser power per meter can attain 105 W. The PCF is pumped by two diode lasers with central wavelength of 976 nm. The slope efficiency is 76%, and the beam quality factor M^2 at x and y axes are measured to be 1.06 and 1.08, respectively. No thermo-optical problems and other roll-over even are observed at the highest output power.     

基于节能理念的LED光源快速成型系统

 LED-SL是采用大功率UV-LED作为固化光源的新型快速成型系统。其基本原理是LED发出的紫外光通过聚焦镜汇聚到树脂液面,该聚焦镜在机械式x-y工作台的驱动下,在树脂液面进行扫描,使液态光敏树脂固化。通过与激光和汞灯光源的比较,阐述了UV-LED固化光源的优势。由于机械式工作台的运动学特性,在扫描固化线时,光束总是在其起始端从静止开始加速,在中段保持匀速运动,到达终点时又减速到静止状态。由于加速和减速段的曝光量大于中间段,使得固化单线两头粗中间细,形成骨形误差。采用功率匹配的能量控制方式以消除骨形误差。功率匹配是指动态调整光束功率,使得扫描过程中光功率始终与扫描速度成正比。实验结果表明功率匹配方式能有效提高成型精度。UV-LED、激光、高压汞灯3种固化光源能耗的实验表明,UV-LED的光固化能耗仅为激光的0.86%,汞灯的0.1%,从而证明了LED-SL突出的节能优势。     

一种应用于高速锁相环的宽锁定范围注入锁定分频器

针对传统的注入锁定分频器锁定范围较窄的问题,提出了一种用于毫米波锁相环的注入锁定分频器.基于55 nm CMOS工艺,设计了一种宽锁定范围的二分频注入锁定分频器.提出分布式差分注入的方式,增强注入电流与注入效率,采用高阶变压器作为谐振腔,在不使用调谐机制的条件下,有效增大了分频器的锁定范围.此外,还对传统buffer的结构进行改进,增强谐波抑制能力,保持了较宽的锁定范围.电路仿真结果表明,提出的分频器电路在0 dBm注入功率下可在22.8～36.3 GHz频段内完成二分频功能,达到45.7％的锁定范围,电路的功耗为3.54 mW(不含buffer).     

大功率LED驱动电源设计

介绍了大功率LED的特性,分析了市场上常见的驱动电源,研究了在路灯照明领域应用中为能更好地发挥大功率LED的优点,驱动电源必须满足大电流输出,以达到理想的发光强度,保证LED使用寿命。实验表明,采用恒流加温度补偿方式驱动LED的设计方案可行。     

滞环电流控制型大功率LED恒流驱动芯片的设计

基于标准CMOS工艺,采用滞环电流控制模式,设计了一款新型大功率LED恒流驱动芯片。在标准CMOS工艺范围内,芯片能够实现良好的恒流驱动功能。结果表明,电源电压从3到5V变化时,输出电流保持良好的一致性,其最大值和最小值之差仅为0.075mA;随着温度的升高,输出电流先增大后减小,在电路工作的整个温度区间内,输出电流仅仅变化0.165mA;在电感为理想电感情况下,当芯片驱动7个LED灯时,效率最高可达97.8%。     

Comparison of photovoltaic devices based on MEH-PPV with various molecular weights

Theneedforefficient,inexpensiveandrenewableenergysourcesisstimulatingnewapproachestothepro-ductionoflow-costphotovoltaicdevices.Althoughinor-ganicsemiconductorsaretheprimaryproductions,highfabricationcostsmakeinorganicsolarcelldifficulttomeetlarge-scaleapplicationsduetoitscomplicatedtech-nology,highcostandrigormaterialprocessing.Thesolarcellsbasedonorganicmolecule[1]andconjugatedpoly-mer[2—6]havealreadywelldeveloped.Conjugatedpolymerphotovoltaicdeviceshaveattractedagreatdealofatten-tionduetot…     

Fabrication and spectra characteristics of high efficiency white organic light-emitting diodes with single emitting layer

High-efficiency white organic light-emitting devices with single emitting layer are demonstrated. N,N‘-diphenyI-N,N‘-bis(1,1‘-biphenyl)-4,4‘-diamine (NPB) is used as hole transport layer, while 4,7-diphenyl-l,10-phenan-throline (BPhen) as electron transport layer and 9,10-di-(2-naphthyl)-2-terbutyl-anthracene (TADN) doped with the fluorescent dye 4-(dicyanomethylene)-2-t-buty1-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) as single emissive layer. The effects of performance by the concentration of DCJTB and the thickness of emissive layer are studied. The device with a structure of indium tin oxide/NPB (50 nm)/TADN: 0.2% DCJTB (15 nm)/BPhen (40 nm)/Mg: Ag shows a maximum brightness of 11400 cd/m^2, a peak current efficiency of 5.6 cd/A and power efficiency of 4.1 Ira/W, while the low turn-on voltage of 3.1 V and the stability of the Commission International De L‘Eclairage coordinate. The spectra through color filter of the device are also studied.     

一种高功率因数交流LED驱动电路的设计

传统的LED驱动电路由于采用AC-DC变换器,需要大的电感和电解电容,导致LED驱动电路存在体积大、成本高、寿命短等问题,提出一种新型交流电压直接驱动的LED驱动电路。该驱动电路仅需要MOSFETs和运放等有源器件,输入电流能跟随输入电压呈正弦波形变换,以获得高功率因数和低THD。仿真和实验验证该驱动电路的电气特性。     

垂直腔面发射激光器的原理与设计

阐述了垂直腔面发射激光器（VCSEL）的工作原理及器件的设计方案,并设计出激射波长为980nm,InGaAs/GaAs多量子阱作为发光材料,氧化物限制电流,衬底面出光的基横模低阈值的器件结构。     

1319nm与660nm双波长Nd:YAG激光器的研究

为研究获得高功率红光的有效方法,研制了一种准连续输出1319nm与660nm双波长Nd:YAG激光器.文中分析了波长1319nm激光的辐射跃迁能级,论述了抑制1064nm激光的生成从而提高1319nm激光输出等关键技术,研究了光学镜片的镀膜参数与腔型结构,实现1319nm激光连续输出最高功率43W,以1319nm激光为基频,置入KTP晶体内腔倍频,并设置声光Q开关,获得660nm红光准连续输出2W,实现1319nm与660nm双波长输出.