绝缘体上硅场效应晶体管热导率尺度效应模型

针对硅微纳米薄膜热导率存在严重尺度效应的问题,提出一种等效边界散射自由程近似的全耗尽绝缘体上硅(FD SOI)金属氧化物半导体场效应晶体管(MOSFET)硅薄膜热导率尺度效应模型。探讨硅材料内声子散射机理,量化考虑束缚态与自由态电子影响的声子弛豫时间,推导得到硅材料热导率解析模型;深入研究声子边界散射机制,近似求解衡量尺度效应的衰减因子,获取等效声子边界散射平均自由程;考虑由粗糙度引起的界面效应,利用Matthiessen规则将硅材料内声子散射与声子边界散射等过程进行耦合,建立起适用于纳米FD SOI MOSFET硅薄膜热导率解析模型,并利用Asheghi原始模型与实验测试数据对等效边界散射自由程近似热导率模型进行了验证。模型计算结果表明,硅薄膜内声子边界散射等效平均自由程约为薄膜厚度的2.5倍。声子边界散射在微尺度与纳尺度声子热传输过程中占据主导地位,决定了硅薄膜内声子超快热传输特性。采用等效边界散射自由程近似的热导率模型能够与Asheghi模型及实验测试数据较好地吻合,更加凸显衰减因子的物理意义以及有效地揭示纳米器件有限空间热导率的尺度效应。     

微尺度传热学进展

综述微尺度热科学的理论建模、实验测试方法及计算机模拟等三方面的研究进展,重点讨论各理论模型的适用条件及优缺点.从线性波尔兹曼传输方程的解得出声子散射热传输方程.体积和重量不断减少的半导体微尺度器件中的非金属薄膜材料传热机理的研究将会促成一些新的工程应用,有可能开辟新的市场,并为有关基础探索提供了崭新的研究手段.     

用分子动力学方法预测硅纳米薄膜的热导率

采用非平衡分子动力学方法,基于优化的集成势函数COMPASS力场,预测了室温下(300K)硅纳米薄膜的热导率.模拟结果表明:厚度约4~10nm的硅薄膜的热导率在3.06~7.28 W/(m·K)范围,并且随着膜厚的增加而增大,表现出明显的尺度效应.在所计算的薄膜厚度范围内,硅纳米薄膜的热导率与薄膜厚度呈现近似线性变化的关系.应用气动理论对产生的尺度效应进行了初步的理论分析,当薄膜厚度在几纳米到十几纳米时,有效声子平均自由程与膜厚有关,不再等于体材料的平均自由程.同时也将本文的预测结果与其他研究者采用Stillinger-Weber势所进行的模拟结果进行了比较.为分子动力学方法在低维材料热物性方面的研究提供了有益的参考.     

Spindt型真空微三极管系统的静电场电容数值分析

以静电学理论为基础,采用边界元方法对Ｓｐｉｎｄｔ型真空微三极管系统的极间电容进行了数值模拟,通过计算多导体系统电荷求解极间电容的方法,解决了以往电容数值计算中未解决的第三电极影响和栅极厚度的问题,并通过计算结果真空微电子器件的应用和优化方在对极间电容与器件几何参数的关系进行了系统的研究,分析结果对真空微电子微波器件的设计有指导作用,所建立的微三极管边界元法计算模型对其它结构的真空微电子器件的电容分     

微封闭真空微电子二极管的实验研究

微封闭真空微电子二极管的实验研究＊刘卫东朱长纯（西安交通大学，７１００４９，西安）对真空微电子器件进行真空封装，是其得以广泛应用的重要先决条件［１］．未密封的真空微电子器件的长期稳定工作及各项性能测试，往往需要庞大的真空系统，这限制了它的广泛应用．目...     

电子微器件微尺度激光喷丸强化实验研究

微尺度激光喷丸是一种灵活、精准的加工工艺,能够广泛应用于微电子设备中的电子微器件中,以改善电子微器件的强度及可靠性要求。为了研究微尺度激光喷丸对电子微器件的强化机制,对电子微器件常用加工材料铜箔进行微尺度激光喷丸强化。微尺度激光喷丸及未喷丸铜箔材料表面轮廓度、变形情况及显微硬度进行对比分析。实验结果表明,激光光斑的搭接率对铜箔微变形深度有一定影响,随着激光光斑能量的增加,铜箔微变形深度逐渐增加,经过微尺度激光喷丸强化的铜箔表面显微硬度得到了显著改善。     

第6届ASME国际微、细及纳米通道会议

2008年6月21～27日，我在学校和导师彭晓峰教授的资助下，赴德国达姆施塔特（Darmstadt）参加了在传热学科微尺度传热传质研究领域中享有盛誉的第6届ASME国际微、细及纳米通道会议（ICNMM2008），并在会议上宣读了论文。     

PZT压电薄膜的压电系数d 31的测量及其微悬臂梁简谐振动模拟

介绍了一种应用微悬臂梁结构，简单直接测量其中压电薄膜PZT的横向压电系数d31的方法。利用微悬臂梁器件本身和普通仪器，通过测量电压作用下微悬臂梁所产生的挠度值即可获得d31。还介绍了应用所测的d31对微悬臂梁的谐振进行有限元模拟的方法，及与振动实验结果的比较。     

真空栅介质场效应晶体管自热效应模型

针对纳米尺度金属氧化物半导体场效应晶体管(MOSFET)热传输尺度效应对自热效应影响加剧的问题,提出一种考虑尺度影响的真空栅介质垂直堆叠硅纳米线(SiNWs)环栅场效应晶体管(GAA FET)自热效应模型。首先,分析硅薄膜与SiNWs内声子散射自由程之间的关系,量化用于衡量声子边界散射的SiNW热导率衰减因子;然后,根据国际上现阶段关于纳米硅薄膜热导率的解析模型,推导得到考虑尺度效应影响的SiNW热导率解析模型;最后,结合纳尺度器件热传输的关键路径,建立起考虑尺度影响的GAA SiNWs FET自热效应模型。在TCAD软件中采用所提自热效应模型实现了GAA SiNWs FET自热效应的数值计算。仿真结果表明:低热导率真空栅介质、垂直堆叠多热源与热传输尺度效应将导致真空栅介质GAA SiNWs FET热生成与扩散过程更加复杂,加剧器件自热效应;通过真空栅介质间隙与环绕气体压强之间的折中设计能够最大化栅极热传输能力,达到抑制器件自热效应以改善器件性能及其可靠性的目的;与传统自热效应模型估算的热点温度值相比,所提出的自热效应模型预测的真空栅器件内热点温度提高了30%,表明该自热效应模型能够有效的揭示GAA FET内SiNW热传输尺度效应对自热效应的影响机制。     

非平衡分子动力学法模拟计算SiC材料的热导率

为了探究更高效的碳化硅(SiC)材料热导率的模拟方法,应用逆非平衡分子动力学(rNEMD)法及传统非平衡分子动力学(NEMD)法对β晶型SiC(β-SiC)材料的热导率进行模拟计算和对比; 2种方法的模拟过程均先建立横截面尺度小而轴向尺度大的棒状模型,采用周期性边界条件、应用修正嵌入原子法(MEAM)势函数,先后进行正则系综(NVT)的弛豫和微正则系综(NVE)内的动态沿轴向生成温度梯度的过程,分别利用傅里叶定律模拟计算得到SiC材料的热导率。结果表明:2种方法的计算结果均出现热导率随生成温度梯度的材料轴向尺度增加而增大的有限尺度效应,应用倒数拟合的外推法可以计算模拟体系沿轴向为无穷大时的宏观体相β-SiC材料的热导率; r NEMD法具有较高的计算效率,更适合热导率的模拟计算。     

Some effects of interface on fluid flow and heat transfer on micro- and nanoscale

The interfacial effects on flow and heat transfer on micro/nano scale are discussed in this paper. Different from bulk cases where interfaces can be simply treated as a boundary, the interfacial effects are not limited to the interface on a microscale but could extend into a significant, even the whole domain of the flow and heat transfer field when the characteristic size of the domain is close to the mean free path （MFP） of the carriers inside an object. Most of microscale thermal phenomena result from interfacial interactions. Any changes in the interactions between the object and boundary particles, such as the force between fluid and solid wall particles, microstructure of interfaces, could affect thermal properties, flow and heat transfer characteristics and hence change thermal conductivity, velocity and temperature profiles, friction coefficient and thermal radiative properties, etc. The properties of nanostructure or flow and heat transfer features of fluid in micro/nanostructures not only depend on themselves, but also on the interaction with the interface because the interface impact can go deep inside the flow. The same fluid, same channel geometry but different wall materials could have different flow and heat transport characteristics on microscale.     

Preparation and performance of novel LLTO thin film electrolytes for thin film lithium batteries

We prepared a series of lithium lanthanum titanate(LLTO) thin film electrolytes by radio frequency(RF) magnetron sputtering using LLTO targets in a N2 atmosphere.We also deposited the LLTO thin films in an Ar atmosphere under a same condition as references for comparison.The microstructure morphology and the composition of the thin films were investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy(XPS),respectively.Results show that the thin film has an amorphous structure with a uniform surface and it is free of pinholes and cracks.Impedance measurements reveal that the ionic conductivity of the electrolytes is beneficial for all solid lithium batteries dependent on the lithium content at room temperature.We found that the amorphous LLTO thin film performs well and it has potential application in microbatteries for use in microelectronic devices.     

Molecular dynamics study on thermal conductivity of nanoscale thin films

A simple and effective model of heat conduction across thin films is set up and molecular dynamics simulations are implemented to explore the thermal conductivity of nanoscale thin dielectric films in the direction perpendicular to the film plane. Solid argon is selected as the model system due to its reliable experimental data and potential function. Size effects of the thermal conductivity across thin films are found by computer simulations: in a film thickness range of 2–10 nm, the conductivity values are remarkably lower than the corresponding bulk experimental data and increase as the thickness increases. The consistency between the approximate solution of the phonon Boltzmann transport equation and the simulation results ascribes the thermal conductivity size effect to the phonon scattering at film boundaries.     

Thermal conductivity of nanoscale thin nickel films

The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T=300 K, which is lower than the Debye temperature ΘD=450 K, the results show that in a film thickness range of about 1?11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.     

现代技术中的微量级热现象

近年来，在制造具有新颖结构的微型器件和材料（例如微电子器件、微机电系统和各种先进材料）方面取得了巨大的进展。这种发展使得热科学领域中的热现象。从发生在大量级结构中转移到发生在级结构中。对于更好地理解和控制能量传递而言，这种转移既提出了挑战又提供了机遇。本文从微尺寸、微结构和微时间三方面说明了上述微量级热现象。     

功率型发光二极管芯片的温度场与应力场

发光二极管(LED)的结点温度和应力分布对它的发光效率、可靠性和寿命有着至关重要的影响。为了优化器件的性能,该文利用有限元方法对功率型LED芯片在不同输入功率、基板材料、换热条件下的温度和热应力进行了模拟与分析。结果表明,目前广泛应用的Sapphire基板效果不是很好,如果能减小晶格不匹配的影响,采用硅基板是较好的选择。当基板导热系数、换热系数大于一定值后,单纯的改进基板的导热系数或强化基板换热,对提高器件的性能已经没有明显的效果。     

功率型发光二极管芯片的温度场与应力场

发光二极管(LED)的结点温度和应力分布对它的发光效率、可靠性和寿命有着至关重要的影响。为了优化器件的性能,该文利用有限元方法对功率型LED芯片在不同输入功率、基板材料、换热条件下的温度和热应力进行了模拟与分析。结果表明,目前广泛应用的Sapphire基板效果不是很好,如果能减小晶格不匹配的影响,采用硅基板是较好的选择。当基板导热系数、换热系数大于一定值后,单纯的改进基板的导热系数或强化基板换热,对提高器件的性能已经没有明显的效果。     

掺杂非醚聚苯基喹嗯啉(PPQ)薄膜的光致发光和电致发光

用具有强蓝光发射的1,3,5-三芳基-2-吡唑啉化合物TPL对非醚聚苯基喹嗯啉（PPQ）进行掺杂,测量掺杂PPQ薄膜的光致发光和电致发光谱,根据掺杂前后PPQ薄膜的荧光谱变化,表明掺杂PPQ薄膜发光存在着基质分子和掺杂分子间的能量传递或电荷转移,掺杂PPQ薄膜的电致发光谱随外加电压变化,说明外加电压对PPQ具有调制作用。     

膜厚与硅含量对硅基铜膜的电导率和残余应力的影响

与铝相比铜膜具有电导率高,抗电迁移能力大而代替铝膜作为集成电路的内连线和地线,其残余应力和电导率是两个重要的参数．本文对硅片上铜膜的残余应力和电导率进行了研究．结果表明,膜中的残余应力随膜厚的增加而增加;硅含量越多,残余应力越小;电导率随膜厚的增加而增加直到趋于最大值;硅含量越大,其导电率越小．     

Adjustable thermal expansion in La(Fe,Si)_(13)-based conductive composites by high-pressure synthesis

Providing a suitable contact interface, where a high conductivity material with a desirable coefficient of thermal expansion(CTE) adjoins the target micro-electric devices, is very crucial to optimize the properties and service life of the relevant instruments. Regrettably, a high conductivity, low thermal expansion and relatively inexpensive material is very rare. Composites, fortunately, can offer a method to design materials with adjustable properties by mixing two or more diverse constituents. In this paper, high conductivity composites with adjustable thermal expansion were successfully prepared by a high-pressure synthesis. The composites are based on combining La(Fe,Si)_(13)-based compounds, the materials showing a giant, isotropic negative thermal expansion(NTE) properties, within Cu matrix. The La(Fe,Si)_(13)-based compounds were used to adjust the CTE of the composites, while the Cu phase is in charge of tuning the thermal conductivity properties. Thus, by changing the relative amount of the two components, the composites with high conductivities and adjustable CTE were achieved. Furthermore, the thermal expansion and magnetic properties of the composites were investigated by a physical property measurement system. The present results highlight the potential applications of the Cu-based high conductivity composites with room-temperature NTE properties in the thermal contacts to various semiconductor and microelectronic devices.