模板法合成Ag纳米线阵列

以多孔阳极氧化铝为模板,用乙二醇作还原剂,将Ag 在模板的纳米孔道内还原并进行限域生长,制得了Ag纳米线.用X-射线衍射光谱(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)等检测手段对产物进行了表征,结果表明所得Ag纳米线具有面心立方晶体结构,纳米线阵列排列整齐,长度可达10μm,单体纳米线的直径约为60 nm,与所用模板的孔径相当.     

一类半导体器件模拟的Galerkin-MMOCAA方法

用MMOCAA格式（调整对流的特征线修正方法）处理半导体器件模拟的对流占优扩散问题,通过对对流项进行调整,仅增加少童计算量,使该问题既保持了全局质量守恒性质,又具有MMOC格式（特征线修正技术）的所有优点．进行了理论分析,得到了最优阶L^2模误差估计结果．     

二维金纳米微粒有序阵列的制备

对于用十二烷基硫醇包覆的金纳米微粒,用Langmuir-Blodgett(LB)技术制备了二维金纳米微粒有序阵列．在单纯的硫醇包覆的金纳米微粒形成的LB膜中,由于硫醇分子之间的疏水相互作用,容易导致金纳米微粒的自组织而在LB膜中形成缺陷．为了改善金纳米微粒的成膜性能和提高金纳米微粒阵列的有序性,正十二醇作为添加剂和润滑剂加入到金纳米微粒的氯仿溶液中与金纳米微粒一起形成LB膜．用透射电子显微镜对金纳米微粒的二维阵列进行了表征．结果表明,正十二醇的加入可以有效地减少用LB技术制备的二维金纳米微粒阵列中的缺陷,提高金纳米微粒阵列的有序性．     

使用连接池和预编译技术提高JSP系统的性能

首先介绍连接池技术和预编译技术的基本概念及优点,然后通过具体实例分别介绍JSP系统中连接池 和预编译的实现方法,最后通过实验测试得出使用连接池、预编译可提高JSP系统性能的结论．     

便携式半导体激光器特性参数测试仪的研制

研制一种基于单片机控制的便携式半导体激光器特性参数测试仪.该仪器由硬件测试电路和上层软件测试系统组成,能够测试各种封装形式的LD电特性参数和特性曲线.包括自动电流控制(ACC)、自动电压控制(AvC)、自动功率控制(APC)和自动背向光电流控制(AMC)四种驱动方式;包括集成的温控电路,能够快速精确控制LD工作温度;保护电路可以使LD免受浪涌冲击等损害;上层软件系统可以很直观绘制LD的各种特性曲线.测试系统还具有体积小、携带方便、操作简单等优点.     

SnO2纳米线阵列的制备及纳米器件的制作

采用简单的溶胶-凝胶方法在多孔阳极氧化铝模板(AAM)的微孔中制备了高度有序的SnO2纳米线阵列。XRD,SEM和TEM对样品进行了结构和形貌的表征,结果表明,高度有序的SnO2纳米线具有四方相的多晶结构,纳米线连续均匀;并对SnO2纳米线阵列的生长机理进行了探讨;最后用聚焦离子束沉积设备制作了单根SnO2纳米线器件。     

An integrated semiconductor device enabling non-optical genome sequencing

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.     

溶胶—凝胶模板法制备有序Mn3O4纳米线阵列

通过模板法制备的一维金属氧化物纳米结构在材料科学领域具有潜在的应用前景。以醋酸锰为前驱体,利用多孔阳极氧化铝膜(anodic aluminum oxide,AAO)为模板,通过溶胶—凝胶法成功制备出Mn3O4纳米线阵列。利用扫描电子显微镜(SEM)、X射线衍射(XRD)、热重分析技术等手段分析合成条件与产物的结构、形貌之间的关系。结果表明,所得产物为四方尖晶石结构,纳米线直径约80 nm,长度约几微米。通过测试产物的磁滞回线,发现其在常温下呈顺磁性。     

The role of long range forces in ordered arrays of tobacco mosaic virus.

We examine the role of electrostatic repulsion and van der Waals' attraction in determining interviral spacings in 'equilibrium' gels of tobacco mosaic virus. The observed spacings are inconsistent with a force-balance model. Experimental probes of the role of forces are suggested.     

用于高功率半导体激光器列阵散热的微通道热沉的研制

理论分析了微通道热沉的热阻的组成,采用微机械加工技术和铜直接粘接技术(DBC)制作了冷却大功率半导体激光器列阵的5层结构的无氧铜微通道热沉;通过测试,用其封装的808 nm线阵二极管激光器准连续输出功率达38.5 W,无氧铜微通道热沉热阻为0.645℃/W,热沉的表面温度均匀性好,能有效散热,满足散热要求.     

数字式电动机综合性能测试装置

根据我国电动机维修量相当大的情况,提出解决维修后带载及空载检测的问题。研制出由电动机、皮带增速装置、发动机及89C55单片机构成的测试系统。用功率变送器、电压电流变送器、1024线光电脉冲发生器及6505转矩测试仪采集各种信号,通过多路开关、A／D转换器送给89C55单片机。单片机在程序的控制下,将各种信号进行分析、计算及综合,将检测结果显示和打印,得到各种检测结果。以便观察电动机维修情况。     

基于仿真模型的太阳能光伏电池阵列特性的分析

为了寻找更好的实现光伏发电系统最大功率点跟踪控制方法,基于仿真模型,研究了太阳能光伏电池阵列的特性。采用Matlab/Simulink模块,基于单个光伏电池的物理特性建立了太阳能光伏电池阵列的仿真模型。模型不但能分析太阳能光伏电池阵列所具有的随着光照强度和温度不同而变化的P-V和I-V非线性特性,而且可仿真太阳能光伏电池阵列工作在最大功率点以及稳定工作区域内时具有线性关系,并进行了理论推导。该模型简单明了,计算速度快。仿真结果表明:仿真与实验结果相符合,当光伏阵列工作在稳定区域内的情况下,dP/dV与I存在线性关系,模型具有通用性与实用性。     

基于仿真模型的太阳能光伏电池阵列特性的分析

为了寻找更好的实现光伏发电系统最大功率点跟踪控制方法,基于仿真模型,研究了太阳能光伏电池阵列的特性。采用Matlab/Simulink模块,基于单个光伏电池的物理特性建立了太阳能光伏电池阵列的仿真模型。模型不但能分析太阳能光伏电池阵列所具有的随着光照强度和温度不同而变化的P-U和I-U非线性特性,而且可仿真太阳能光伏电池阵列工作在最大功率点以及稳定工作区域内时具有线性关系,并进行了理论推导。该模型简单明了,计算速度快。仿真结果表明:仿真与实验结果相符合,当光伏阵列工作在稳定区域内的情况下,dP/dU与I存在线性关系,模型具有通用性与实用性。     

高能中子诱发半导体器件产生单粒子翻转的模拟计算

随着半导体及电子工艺技术的迅速发展,器件向着小尺度、低电压、低电荷、高集成度迈进,大气中子对航空及地面的电子系统造成的单粒子效应越来越显著.本文采用PHITS2.24蒙特卡罗程序及其事件发生器功能,借助于核反应模型与截面数据,验算了描述器件发生单粒子翻转能力的MBGR参数,并采用大气高能中子能谱,对SRAM器件的单粒子翻转率进行了计算与分析.这为我们今后模拟大气中子产生的各类单粒子效应提供了基本方法,也为将来开展相应的辐照实验提供了理论基础.     

Topologically protected quantum bits using Josephson junction arrays

All physical implementations of quantum bits (or qubits, the logical elements in a putative quantum computer) must overcome conflicting requirements: the qubits should be manipulable through external signals, while remaining isolated from their environment. Proposals based on quantum optics emphasize optimal isolation, while those following the solid-state route exploit the variability and scalability of nanoscale fabrication techniques. Recently, various designs using superconducting structures have been successfully tested for quantum coherent operation, however, the ultimate goal of reaching coherent evolution over thousands of elementary operations remains a formidable task. Protecting qubits from decoherence by exploiting topological stability is a qualitatively new proposal that holds promise for long decoherence times, but its physical implementation has remained unclear. Here we show how strongly correlated systems developing an isolated twofold degenerate quantum dimer liquid ground state can be used in the construction of topologically stable qubits; we discuss their implementation using Josephson junction arrays. Although the complexity of their architecture challenges the technology base available today, such topological qubits greatly benefit from their built-in fault-tolerance.     

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).     

用CPLD器件扩展单片机的接口

CPLD器件和EDA技术的出现改变了传统的数字系统的设计思路.介绍了在智能仪表设计中,使用CPLD器件来扩展单片机接口的方法,包括CPLD逻辑功能的设计和单片机接口程序的编写等内容.     

用CPLD器件扩展单片机的接口

CPLD器件和EDA技术的出现改变了传统的数字系统的设计思路.介绍了在智能仪表设计中,使用CPLD器件来扩展单片机接口的方法,包括CPLD逻辑功能的设计和单片机接口程序的编写等内容.     

Optically programmable electron spin memory using semiconductor quantum dots

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.