铜—二氧化硅体系巨霍耳效应研究

研究了体积比为 0 .45≤x≤ 0 .8的Cux(SiO2 ) 1 -x 样品的霍耳系数与成份的关系 ,随着金属体积比的降低 ,霍耳系数R迅速增加 ,并在x=0 .51时达到最大 ,其值为x =0 .8的样品霍耳系数的 70 0倍 ,远超过经典渗流理论计算数值 .本研究表明 ,这种非磁性金属系统中的巨霍耳效应 (GHE)是由界观尺度的量子干涉效应引起的     

铜——二氧化硅体系巨霍耳效应研究

研究了体积比为0.45≤x≤0.8的Cux(SiO2)1-x样品的霍耳系数与成份的关系，随着金属体积比的降低，霍耳系数R迅速增加，并在x=0.51时达到最大，其值为x=0.8的样品霍耳系数的700倍，远超过经典渗流理论计算数值。本研究表明，这种非磁性金属系统中的巨霍耳效应（GHE）是由界观尺度的量子干涉效应引起的。     

量子霍耳效应探讨

本文从线性响应理论的久保公式出发，用正则系综求统计平均的方法，导出了整数量子霍耳电导。从而解释了整数量子霍耳效应。     

磁颗粒复合体系中的反常霍耳效应

巨磁阻和反常霍耳效应都是与电子自旋相关散射有关的磁输运现象,应用扩展的有效介质近似方法和双通道模型,研究了磁颗粒复合体系中的反常霍耳效应,它源于旋轨耦合作用引起的电子非对称自旋相关散射。从理论上计算了反常霍耳效应与磁性颗粒尺寸关系,得到与实验基本相符的结果。在反常霍耳效应与磁颗粒浓度关系的研究中,发现在巨磁阻峰值浓度附近出现最佳的反常霍耳效应。     

霍耳效应实验分析

对霍耳效应测量磁感应强度的实验原理作了分析,讨论了外界定向干扰磁场对实验的影响、指出在实验教学中,相邻霍耳效应测量仪摆放距离宜大于等于2.5m才能忽略相互干扰.     

评霍耳效应的物理模型

本文从理论上证明了传统的霍耳效应物理模型中霍耳电荷分布和电流线的分布是不正确的。     

霍耳效应理论研究发展历程

自1879年霍尔效应发现以来,反常霍尔效应、自旋霍耳效应以及量子霍尔效应相继取得了突破性的进展,但是关于霍尔效应的部分理论机制还处于争论之中,迄今仍是科学研究的热点。本文从经典的霍尔效应开始,系统地介绍霍尔效应的发展历程。     

双交流法霍耳效应测量仪的研制

介绍双交流法霍耳效应测量的原理，并说明制作的仪器的结构和样品架制作技术。电磁铁截面积为８．０ｃｍ×５．５ｃｍ，间隙为１．３ｃｍ，磁感应强度Ｂ可达０．１５Ｔ，如缩小间隙，Ｂｍａｘ可达１．５Ｔ。样品电流从５ｍＡ到２ｕＡ分６个量程。测试表明，仪器的灵敏度、稳定度优于ＦＳ－５型锁相放大器的指标。最后分别对砷化镓材料条形样品和方形样品做了２种方法的测量。     

量子霍耳效应的半经典分析

霍耳效应的解释是以电场、磁场等基本经典概念为基础；而量子霍耳效应的本质是一种量子力学效应．本文避开量子力学高深的数学语言，以经典分析的手法对量子霍耳效应的一些基本概念及实验结果给出较园满的解释．     

（Ni79Fe21）0．48-（Al2O3）0．52纳米颗粒膜的巨霍尔效应

采用磁控溅射法,在玻璃基片上制备了一系列不同Ni79Fe21含量的(Ni79Fe21)x-(Al2O3)1-x纳米颗粒膜样品,并对样品的巨霍尔效应进行了研究.在(Ni79Fe21)0.48-(Al2O3)0.52颗粒膜样品中,透射电镜(TEM)照片清晰地显示出纳米Ni79Fe21颗粒包裹于Al2O3中,且电子间的量子相干效应明显,这可能是导致霍尔效应增强的主要原因.室温下测出了最大的巨霍尔效应值达到4.5 μΩ*cm.改变基片温度,发现巨霍尔效应值变化不大,说明该颗粒膜具有良好的热稳定性,因而在磁传感器上有良好的应用前景.     

(Ni79Fe21)0.48-(Al2O3)0.52纳米颗粒膜的巨霍尔效应

采用磁控溅射法 ,在玻璃基片上制备了一系列不同Ni79Fe2 1含量的 (Ni79Fe2 1) x (Al2 O3 ) 1-x纳米颗粒膜样品 ,并对样品的巨霍尔效应进行了研究。在 (Ni79Fe2 1) 0 .48 (Al2 O3 ) 0 .52 颗粒膜样品中 ,透射电镜 (TEM )照片清晰地显示出纳米Ni79Fe2 1颗粒包裹于Al2 O3 中 ,且电子间的量子相干效应明显 ,这可能是导致霍尔效应增强的主要原因。室温下测出了最大的巨霍尔效应值达到 4 .5 μΩ·cm。改变基片温度 ,发现巨霍尔效应值变化不大 ,说明该颗粒膜具有良好的热稳定性 ,因而在磁传感器上有良好的应用前景     

Hall Effect in Quasicrystals

The relations between Hall effect and symmetry are discussed for all 2- and 3-dimensional quasicrystals with crystallographical|y forbidden symmetries. The results show that the numbers of independent components of the Hall coefficient (R11) are one for 3-dimensional quasicrystals, two for those 2-dimensional quasicrystals whose symmetry group is non-Abelian, and three for those 2-dimensional quasicrystals whose symmetry group is Abelian. respectively. The quasicrysta[s with the same number of independent components have the same form of the components of R11.     

量子霍尔电阻作为电阻自然基准的研究

本文介绍了量子霍尔效应（ＱＨＥ）作为电阻自然基准的前景．并研制了一种量子霍尔电阻（ＱＨＲ）的测量系统，在４．２Ｋ的温度下对ＱＨＲ进行了精密测量，测试了多个ＧａＡｓ－ＡｌＧａＡｓ异质结的ＱＨＲ，其量值为２５８１２．８４６Ω，测量不确定度约为１×１０－６。     

Checkerboard模型中的磁振子霍尔效应

在一些铁磁绝缘体中,由于Dzyaloshinskii–Moriya(DM)相互作用的存在,会出现磁振子霍尔效应,即如果在横向施加一个温度梯度,在纵向上会有热流产生.对Checkerboard模型中可能存在的磁振子霍尔效应做了讨论,通过对角化沿横向取周期边界条件,纵向自由边界条件的体系的哈密顿量确定了该体系中存在受拓扑保护的边缘态,并且根据磁振子的半经典运动方程,计算了纵向热导率随温度的变化曲线.这些结果对于实验上寻找新的具有磁振子霍尔效应的体系及其在自旋电子学上的应用具有一定的积极贡献.     

Direct electronic measurement of the spin Hall effect

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics. Among the different approaches for spin generation and manipulation, spin-orbit coupling--which couples the spin of an electron to its momentum--is attracting considerable interest. In a spin-orbit-coupled system, a non-zero spin current is predicted in a direction perpendicular to the applied electric field, giving rise to a spin Hall effect. Consistent with this effect, electrically induced spin polarization was recently detected by optical techniques at the edges of a semiconductor channel and in two-dimensional electron gases in semiconductor heterostructures. Here we report electrical measurements of the spin Hall effect in a diffusive metallic conductor, using a ferromagnetic electrode in combination with a tunnel barrier to inject a spin-polarized current. In our devices, we observe an induced voltage that results exclusively from the conversion of the injected spin current into charge imbalance through the spin Hall effect. Such a voltage is proportional to the component of the injected spins that is perpendicular to the plane defined by the spin current direction and the voltage probes. These experiments reveal opportunities for efficient spin detection without the need for magnetic materials, which could lead to useful spintronics devices that integrate information processing and data storage.     

霍尔传感器测速系统的设计

文章介绍了霍尔传感器的工作原理及其在工程应用中的种类,举例说明霍尔传感器在测速系统中的应用,提出了霍尔传感器应用电路的设计方法,即电路框图设计、元件参数设置和测量电路仿真,把非电量信号检测来出并转换成便于传输、处理和显示的可用电信号,再利用信号处理和显示电路测出数据。通过实验和理论数据比对,表明该测速系统符合实际应用。     

The microscopic nature of localization in the quantum Hall effect

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties owing to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated with a single-particle drift motion of electrons along contours of constant disorder potential. Transport experiments that probe the extended states in the transition regions between quantum Hall phases have been used to test both the theory and its implications for quantum Hall phase transitions. Although several experiments on highly disordered samples have affirmed the validity of the single-particle picture, other experiments and some recent theories have found deviations from the predicted universal behaviour. Here we use a scanning single-electron transistor to probe the individual localized states, which we find to be strikingly different from the predictions of single-particle theory. The states are mainly determined by Coulomb interactions, and appear only when quantization of kinetic energy limits the screening ability of electrons. We conclude that the quantum Hall effect has a greater diversity of regimes and phase transitions than predicted by the single-particle framework. Our experiments suggest a unified picture of localization in which the single-particle model is valid only in the limit of strong disorder.     

Giant magneto-optical Faraday effect of nanometer Fe-In_2O_3 granular films

The giant magneto-optical Faraday effect of nanometer ferromagnetic metal-semiconductor matrix Fe-In2O3 granular films prepared by the radio frequency sputtering are studied. The result shows that the Faraday rotation angle θF value of the granular film samples with Fe volume fraction x = 35% is of the order of 105(°)/cm at room temperature. Temperature dependence of the Faraday rotation angle θF of Fe0.35(In2O3)0.65 granular films shows that θF value below 10 K increases rapidly with the decrease of the temperature, and when T = 4.2 K, θF value is 106(°)/cm. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that when the temperature decreases to a critical point TP = 10 K, the transformation of state from ferro- magnetic to spin-glass-like occurs in Fe0.35(In2O3)0.65 granular films. The remarkable increase of the Faraday rotation angle θF value of Fe0.35(In2O3)0.65 granular films below 10 K seems to arise from the sp-d exchange interaction of the granular film samples in the spin-glass-like state.