单晶碳化硅磁流变抛光工艺实验研究

针对传统光学加工中碳化硅表面质量精度低和难于加工的特点,提出用磁流变直接加工碳化硅表面的工艺流程。采用自行研制的磁流变抛光机对Φ40×2mm的6H-SiC进行了抛光实验研究。结果表明,直径为40mm的碳化硅材料圆柱体,硅面经过20min的磁流变粗抛,表面粗糙度Ra提升至5.9nm,亚表面破坏层深度降至35.764nm,经过磁流变精抛和超精抛,表面粗糙度最终提升至0.5nm,亚表面破坏层深度降至1.4893nm,表面变得非常平坦,无划痕。由此表明,所采用的工艺流程可以实现碳化硅表面的纳米级抛光和非常小的亚表面破坏层深度。     

剪切增稠抛光加工Si_3N_4陶瓷的试验研究

基于剪切增稠抛光(STP)的加工原理分析Si3N4陶瓷超精密加工的控制策略,考察所制备的含有立方氮化硼(CBN)磨粒的剪切增稠抛光液的流变行为,分析工件抛光前后表面形貌变化及表层应力状态,研究其抛光特性.结果表明:抛光液具有可逆的剪切增稠与稀化效应,可达到STP加工工艺用抛光液的要求;改变磨粒粒径,可以控制Si3N4加工效率与表面质量,且材料去除量和表面粗糙度的理论值能够反映试验值的变化;STP加工Si3N4为持续微切削的"柔性抛光",初期为脆性剪切、粘着磨损去除,后期为塑性去除;当磨粒粒径达到纳米级时,表层应力状态由初始残余拉应力变为压应力,说明STP不仅能高效去除原有表面损伤层而且新引入的损伤小;随着抛光时间的延长,去除量先快速增大而后趋缓;抛光90 min后,去除率由初期的5.00~2.40μm/h降至3.24~2.04μm/h,表面粗糙度Ra由108.9~111.1nm降至22.0~10.7nm;抛光150min后,Ra可降至9.6~7.2 nm,实现了Si3N4陶瓷粗抛后的精密抛光.     

光学元件磁性复合流体抛光特性研究

采用磁性复合流体(MCF)对BK7玻璃进行定点抛光实验,对抛光斑进行三维模型重构,并对磁场空间分布进行仿真与实验分析,阐明抛光材料去除机理,确定材料去除率、表面粗糙度及硬度随抛光时间的变化规律,建立了材料去除量与磁通密度的关系曲线。实验结果表明:抛光形成的抛光斑表面轮廓为蝶形,其沿抛光轮轴向的截面轮廓呈"W"形;材料去除量与磁场强弱及抛光时间密切相关,抛光深度去除率最高可达553 nm/min;表面粗糙度随抛光时间的增加先上升后下降,MCF抛光可获得表面粗糙度Ra6 nm的光滑表面,且粗糙度与硬度呈现一定的正相关关系。     

超声椭圆振动-化学机械复合抛光硅片实验研究

在研制超声椭圆振动-化学机械复合抛光硅片实验装置基础上,进一步开展了抛光压力P,抛光点速度v及抛光液供给量Q等可控工艺参数对硅片抛光表面粗糙度、表面形貌和材料去除率影响的有无超声椭圆振动辅助抛光的对比实验研究.实验结果表明:抛光工具的超声椭圆振动有利于抛光垫保持良好的表面形貌和抛光区获得良好的工作状况,提高硅片材料的去除率;抛光压力对抛光质量的影响最大,抛光速度次之,抛光液供给量影响最小;在最佳抛光效果情况下,可使硅片抛光表面粗糙度值由传统抛光法所获得的Ra0.077ìm降到超声辅助抛光法的Ra0.042 ìm,材料去除率最多可提高18%,并且工件表面形貌有明显改善.     

软质印章石抛光工艺

为了提升软质印章石的加工质量,在不同型号砂纸和溶胶-凝胶(SG)抛光膜上磨抛巴林石、高山石、芙蓉石3种印章石,探讨研磨盘和载物盘的转动方向、转速,加工压力,加工时间等工艺参数及工艺路线,并确定每道工序的最大光泽度值,以及印章石表面形貌和粗糙度之间的关系.结果表明:最终优化工艺的研磨盘、载物盘分别以300,120 r·min^-1同向转动,加工压力为15 MPa;最佳工艺路线是通过在400#砂纸半精磨、在2 000#砂纸的精磨和在SG抛光膜上抛光,使印章石表面光泽度达到50以上,粗糙度在100 nm左右,表面形貌在放大100倍时无明显划痕.     

硬质合金麻花钻的剪切增稠抛光试验研究

针对硬质合金钻削刀具曲面加工效率低的问题,提出了用剪切增稠抛光（Shear Thickening Polishing, STP）方法实现硬质合金钻削刀具的复杂双螺旋曲面的低成本、高效率整体高质量抛光加工. 配制具备剪切增稠特性的非牛顿抛光流体,使用MCR302旋转流变仪测试其流变特性. 基于剪切增稠抛光液的流变特性,对硬质合金麻花钻的刃背、刃带和螺旋槽曲面进行整体抛光. 采用控制变量法分析抛光槽转速和工件转速对硬质合金麻花钻表面粗糙度与材料去除率的影响规律. 试验结果表明,加工后的麻花钻整体表面粗糙度随抛光槽转速的增大先减小再增大,在抛光槽转速为90 r/min时,加工效果最好. 随着工件转速的增加,其整体表面粗糙度先减小后基本不变或略有增加,在工件转速为3 500 r/min时,加工效果最好. 麻花钻材料去除率与抛光槽转速及工件转速呈正相关. 在较优加工参数抛光槽转速90 r/min、工件转速3 500 r/min下,麻花钻经STP 60 min后,其刃背、刃带和螺旋槽表面粗糙度分别从原始的310 nm、450 nm、270 nm降低至10 nm、243 nm、15 nm,刃背和螺旋槽磨削痕迹几乎消失,螺旋槽刃口处缺陷明显减少.     

微槽的超声振动辅助磁性复合流体抛光工艺研究

针对微通道制氢反应器的微槽底部光整加工难题,开展超声振动辅助磁性复合流体(UMCF)抛光工艺研究。根据表面接触理论分析微槽底部气膜对磁性复合流体(MCF)抛光的影响,引入超声振动改善MCF抛光微槽底部的表面质量;通过试验探究UMCF抛光对微槽底部的抛光效果;研究不同参数下MCF抛光和UMCF抛光对微槽的表面形貌、表面粗糙度和去除率的变化规律,获得最佳的抛光参数。研究结果表明：当羰基铁粉粒径为48 μm,抛光时间为5 min,抛光轮转速为500 r/min,抛光间隙为2 mm,振幅为5 μm时抛光效果最佳,微槽顶部表面粗糙度Ra达到0.217 μm;槽底表面粗糙度Ra达到0.403 μm,去除率为4.74 mg/min。     

医用钛合金海尔贝克磁场阵列化学磁流变抛光研究

为了提高医用钛合金（TC4）抛光中的精度以及效率,采用基于海尔贝克磁场阵列的化学磁流变抛光方法加工医用钛合金. 利用海尔贝克磁场阵列强化磁场强度,将过氧化氢溶液作为氧化剂来进行抛光加工. 通过仿真模拟对比海尔贝克磁场阵列与常规N-S磁场阵列,改变羰基铁粉的活性来验证实验可行性,研究了加工间隙、主轴转速以及磨粒粒径对工件表面粗糙度以及接触角的影响规律. 结果表明,海尔贝克磁场阵列比常规N-S磁场阵列有更高的磁场强度;采用本文方法抛光的医用钛合金表面粗糙度比单一纯磁流变抛光降低80%;当加工间隙为0.8 mm,主轴转速为400 rad/min,磨粒粒径为1 μm时,可使工件表面达到光滑效果,表面粗糙度最优可达15.5 nm,同时测量出实验组钛合金表面接触角数值多数小于90°. 应用该方法抛光医用钛合金可以得到超光滑表面,表面具有亲水性,符合医用钛合金标准.     

小振幅兆声对硅片化学机械抛光效果的影响

为了改善硅片化学机械抛光效果,提高硅片表面质量,一小振幅兆声振子引入化学机械抛光系统,通过对比表面粗糙度大小和分布,发现该振子对改善硅片化学机械抛光效果有明显促进作用。测试表明:振子频率为1.7 MHz,中心最大振幅约为70 nm;硅片表面振动频率为1.7 MHz,中心最大振幅小于10 nm;该振子独立抛光时,未发现硅片表面粗糙度明显降低,但它能引起抛光液微流动,使储存在抛光垫窠室中更多的抛光液进入接触区参与抛光。无振动抛光时,硅片中心区域抛光液供给不足,造成该区抛光效果较差;兆声致微流动能有效缓解这种不足,改善硅片中心区域抛光效果,不仅如此,它还能有效降低其他区域的表面粗糙度。与无振动抛光的硅片相比,经过兆声辅助抛光的硅片,表面粗糙度更小,分布更均匀。     

镍铬合金钢脉冲电流电化学抛光工艺研究

机械零件的表面质量直接影响其使用寿命.采用电化学机械复合抛光,可以大大提高机械零件的抛光效率,但对于深小孔等抛光工具(磨头)很难深入的小结构,采用此方法工艺上很难实现.脉冲电流电化学抛光可以经济有效地对复杂形状的零件型腔进行抛光.对镍铬合金材料试件进行了脉冲电流电化学抛光的工艺试验,讨论并分析了实验结果,得出了加工参数对表面粗糙度的影响规律,以及各加工参数影响表面粗糙度的经验公式.     

Surface roughness and removal rate in magnetorheological finishing of a subsurface damage free surface

Based on computer-controlled optical surfacing, a new technique called magnetorheological finishing (MRF), is presented. The new technique combines the features of conventional loose abrasive machining with a wheel shaped polishing tool. The tool incorporates a host of features and has unprecedented fabricating versatility. The pre-polishing and fine polishing processes can be performed only by adjusting different parameters. The material removal function is studied theoretically and the results of simulation present a Gaussian distribution feature. Based on the established theoretical model, material removal rate experiments involving a parabolic mirror are designed and carried out to determine the effect of controllable parameters on size of the gap between the workpiece and the polishing wheel, rotating speed of the polishing wheel, concentration of volume fraction of non-magnetic particles and polishing time. Further experiments are carried out on the surface microstructure of the workpiece, the final surface roughness with an initial value of 10.98 nm reaches 1.22 nm root mean square (RMS) after 20 min of polishing. The subsurface damage experiment and the atomic force microscopy (AFM) measurement on the polished surface can also verify the feasibility of the MRF technique.     

Surface roughness and removal rate in magnetorheological finishing of a subsurface damage free surface

Asphericalopticalcomponentsareimportantin modernopticalsystems[1].Thereexistmanytypesof aspheres.Thecommonlyusedonesincludeparabola,ellipsoid,etc.[2]Recently,increasingrequirements forasphericalopticalcomponents(e.g.forlithogra phy)togetherwithgrowingfieldsoftheirapplication(e.g.conformalandfreeformoptics)resultina strongneedforopticalfinishingmethodsthatcanbe appliedlocallytopolishcomplexshapedaspheresin brittlematerials(e.g.glass)[3].However,making high precisionaspheresisstillprimarilyanard…     

磨粒和抛光垫对铝合金化学机械抛光性能

磨粒和抛光垫为化学机械抛光(CMP)提供了重要的机械磨削作用。为了探讨磨粒和抛光垫对铝合金化学机械抛光的磨削作用,研究了不同种类磨粒和抛光垫对材料去除率和表面形貌的影响。结果表明：在pH=12-13时,氧化铝抛光液去除率(MRR)为910nm/min,远大于二氧化硅与氧化铈抛光液,且获得较为理想光滑表面。3种不同抛光垫抛光后的铝合金表面,呢子抛光垫表面将不会出现划痕与腐蚀点,表面粗糙度较低为10.9nm。随着氧化铝浓度的增加,材料去除率(MRR)和表面粗糙度(Ra)均增加。当氧化铝含量为4wt%时,抛光垫使用呢子抛光垫适宜铝合金化学机械抛光,在获得高去除率的同时铝合金表面精度高。     

LC4表面纳米SiC和PTFE双颗粒复合阳极氧化膜的制备

以250g/L硫酸+15g/L草酸为基础电解液,通过添加2g/L表面改性的纳米SiC颗粒和15ml/LPTFE乳液,组成双颗粒复合阳极氧化电解液,利用脉冲电源在LC4铝合金表面制备双颗粒复合的阳极氧化膜.结果表明:在脉冲电源频率80Hz、占空比80%、电流密度3A/dm2、温度0℃、氧化时间40min等条件下,在LC4铝合金表面成功制备出厚度为20μm,硬度为4340MPa的双颗粒复合的Al2O3-SiC-PTFE阳极氧化膜;复合氧化膜结构中存在着大量的微米级的孔隙缺陷为复合沉积双颗粒提供了复合场所,形成了具有纳米SiC颗粒增强膜的硬度和PTFE颗粒增强膜的自润滑性能的双颗粒复合氧化膜.     

单晶蓝宝石的摩擦化学机械抛光

为揭示抛光过程中SiO_2磨粒与蓝宝石的摩擦化学反应机理,结合摩擦化学理论和纳米压痕试验方法,采用有限元法模拟纳米压头压入与卸载后蓝宝石表面的应力分布情况.数值模拟结果表明:当SiO_2磨粒与蓝宝石的接触应力为5~15GPa时,发生固相反应所需活化能约为14.46kJ/mol,反应速率常数约为0.07~0.23μm/min;在摩擦化学反应过程中,SiO_2磨粒与蓝宝石的接触半径为15~21nm,其变形量为6.88~10.22nm.低载荷纳米压痕试验结果表明:忽略压头与SiO_2磨粒的硬度、几何形状等影响因素,单颗SiO_2磨粒上的作用力小于0.7 mN,其微观表面粗糙度R_t=38.19nm及R_a=3.62nm.     

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25℃ and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.     

预处理对PAA膜制备的影响

利用两步阳极氧化法制备多孔氧化铝膜,以膜的孔直径、孔密度和膜厚等作为膜质量指标,探讨预处理膜制备的影响;利用扫描电镜,X—射线衍射观察不同条件下氧化膜的微观结构。结果表明:经过高温退火和电化学抛光等预处理,能够得到质量较高的膜,孔直径为55~60 nm,孔间距为90~95 nm,膜厚度为8.5~9μm,孔密度高达1.28×1010个/cm2。     

Compound machining of silicon carbide ceramics by high speed end electrical discharge milling and mechanical grinding

A compound process that integrates end electrical discharge (ED) milling and mechanical grinding to machine silicon carbide (SiC) ceramics is developed in this paper. The process employs a turntable with several uniformly-distributed cylindrical copper electrodes and abrasive sticks as the tool, and uses a water-based emulsion as the machining fluid. End electrical discharge milling and mechanical grinding happen alternately and are mutually beneficial, so the process is able to effectively machine a large surface area on SiC ceramic with a good surface quality. The machining principle and characteristics of the technique are introduced. The effects of polarity, pulse duration, pulse interval, open-circuit voltage, discharge current, diamond grit size, emulsion concentration, emulsion flux, milling depth and tool stick number on performance parameters such as the material removal rate, tool wear ratio, and surface roughness have been investigated. In addition, the microstructure of the machined surface under different machining conditions is examined with a scanning electron microscope and an energy dispersive spectrometer. The SiC ceramic was mainly removed by end ED milling during the initial rough machining mode, whereas it is mainly removed by mechanical grinding during the later finer machining mode; moreover, the tool material can transfer to the workpiece surface during the compound process.