与铁磁电极耦合的双量子点中近藤效应的研究

研究了与铁磁电极耦合的串连双量子点中的平衡和非平衡近藤效应,同时考虑了两侧电极中自旋极化的态密度为平行和反平行的情况。结果表明,每个量子点的平衡态密度在平行情况下只有一个尖峰,当有外加偏压的时候,这个尖峰将分裂为两个;在反平行情况下,每个量子点的平衡态密度有两个尖峰,分别对应与电子的两种不同自旋取向,自旋向下和向上的态密度双峰之间的距离将在外加偏压的影响下分别增大和减少。在反平行情况下,每一种自旋成份的微分电导只有一个尖峰,并且分别在费米面之上和之下;而在平行情况下,每种自旋成份的微分电导都有两个尖峰,其中自旋朝下的微分电导尖峰较高。     

与铁磁引线耦合的垂直双量子点中的自旋极化输运

研究与左右两个铁磁引线耦合的垂直双量子点系统中自旋极化流和自旋积累的性质。发现他们可以用外加偏压或两引线的磁化方向充分调节。在平行磁化方向时,电流的自旋极化率始终为正,并且敏感地依赖引线磁化率取值的相对大小。当磁化方向为反平行时,流的自旋极化率可正可负,在偏压等于正负库伦相互作用强度时分别出现谷和峰。自旋积累有相似的行为。尤其是在一个引线的磁化率为零时,会出现自旋二极管效应。     

量子点半导体光放大器的自发辐射特性研究

从导带、价带和浸润层的能级跃迁出发,采用分段模型对量子点半导体光放大器的增益和自发辐射进行了数值研究．物理模型包括自发辐射行波方程和各能级栽流子与光子数速率方程．经过大量数值计算,得到基态电子占用概率随注入光脉冲的变化,以及增益动态过程（饱和与恢复）和输出光脉冲的时域波形畸变．进一步研究了量子点光放大器自发辐射谱和增益平坦性,结果表明自发辐射功率随输入信号功率增大而减小,引入合适的钳制光,可在20nm带宽内获得小于0．3dB的增益平坦度,或者40nm带宽内小于1．0dB．     

GaN基量子点的制备与光致发光特性的研究

由于GaN基量子点具有较强的量子效应,有望获得比其他量子阱器件更优异的性能。目前GaN基量子点的制备及其光学特性已经成为Ⅲ-Ⅴ族半导体器件研究的热点。探讨了GaN基量子点的生长及其结构特性,重点研究了GaN基量子点的S-K生长模式及其影响量子点生长的因素,并讨论了GaN基量子点的光致发光特性及其影响因素。     

Quantum Size-Dependent Third-Order Nonlinear Optical Susceptibility in Semiconductor Quantum Dots

The density matrix approach has been employed to investigate the optical nonlinear polarization in a single semiconductor quantum dot(QD). Electron states are considered to be confined within a quantum dot with infinite potential barriers. It is shown, by numerical calculation, that the third-order nonlinear optical susceptibilities for a typical Si quantum dot is dependent on the quantum size of the quantum dot and the frequency of incident light.     

激子效应对抛物量子点中光电导的影响

利用记忆函数方法研究了抛物量子点中的光电导,并导出了光电导的解析表达式.以典型的GaAs/Ga1-xAlxAs抛物量子点为例作了数值计算,结果表明,在弱耦合区域,随着抛物势频率的增加,光电导会随之增强,而在强耦合区域,光电导会随之减弱;在弱耦合区域,随着抛物势频率的增加,光电导峰会向左漂移,而且抛物势频率越大,光电导曲线越不对称;考虑了激子效应后的光电导比未考虑激子效应的光电导大了10%以上.     

非对称耦合量子阱中的光学克尔效应研究

详细研究了GaAs/AlxCa1-xAs非对称耦合量子阱的光学克尔效应,并利用紧束缚密度矩阵方法及迭代法导出了光学克尔效应的解析表达式.数值结果表明,入射光强、弛豫率和结构参数(如势垒宽度和右阱宽度)对光学克尔效应有明显的影响;通过优化入射光强、弛豫率和结构参数,可以获得比量子盘模型的克尔系数大四个数量级的克尔系数,其...     

椭球量子点中施主杂质的三阶非线性光学极化率

在有效质量近似下,采用变分方法,研究椭球量子点中施主杂质的非线性光学性质.基于计算能量和波函数,以典型的半导体材料砷化镓为例,讨论椭球量子点的几何尺寸和各向异性度对施主杂质的三阶非线性极化率的影响.结果显示这些因素对椭球量子点中施主杂质的非线性光学性质有强烈的影响.     

Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots

Photoluminescence blinking--random switching between states of high (ON) and low (OFF) emissivities--is a universal property of molecular emitters found in dyes, polymers, biological molecules and artificial nanostructures such as nanocrystal quantum dots, carbon nanotubes and nanowires. For the past 15 years, colloidal nanocrystals have been used as a model system to study this phenomenon. The occurrence of OFF periods in nanocrystal emission has been commonly attributed to the presence of an additional charge, which leads to photoluminescence quenching by non-radiative recombination (the Auger mechanism). However, this 'charging' model was recently challenged in several reports. Here we report time-resolved photoluminescence studies of individual nanocrystal quantum dots performed while electrochemically controlling the degree of their charging, with the goal of clarifying the role of charging in blinking. We find that two distinct types of blinking are possible: conventional (A-type) blinking due to charging and discharging of the nanocrystal core, in which lower photoluminescence intensities correlate with shorter photoluminescence lifetimes; and a second sort (B-type), in which large changes in the emission intensity are not accompanied by significant changes in emission dynamics. We attribute B-type blinking to charge fluctuations in the electron-accepting surface sites. When unoccupied, these sites intercept 'hot' electrons before they relax into emitting core states. Both blinking mechanisms can be electrochemically controlled and completely suppressed by application of an appropriate potential.     

Quantum nature of a strongly coupled single quantum dot-cavity system

Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is strongly coupled to a cavity mode, it is possible to realize important quantum information processing tasks, such as controlled coherent coupling and entanglement of distinguishable quantum systems. Realizing these tasks in the solid state is clearly desirable, and coupling semiconductor self-assembled quantum dots to monolithic optical cavities is a promising route to this end. However, validating the efficacy of quantum dots in quantum information applications requires confirmation of the quantum nature of the quantum-dot-cavity system in the strong-coupling regime. Here we find such confirmation by observing quantum correlations in photoluminescence from a photonic crystal nanocavity interacting with one, and only one, quantum dot located precisely at the cavity electric field maximum. When off-resonance, photon emission from the cavity mode and quantum-dot excitons is anticorrelated at the level of single quanta, proving that the mode is driven solely by the quantum dot despite an energy mismatch between cavity and excitons. When tuned to resonance, the exciton and cavity enter the strong-coupling regime of cavity QED and the quantum-dot exciton lifetime reduces by a factor of 145. The generated photon stream becomes antibunched, proving that the strongly coupled exciton/photon system is in the quantum regime. Our observations unequivocally show that quantum information tasks are achievable in solid-state cavity QED.     

An elementary quantum network of single atoms in optical cavities

Quantum networks are distributed quantum many-body systems with tailored topology and controlled information exchange. They are the backbone of distributed quantum computing architectures and quantum communication. Here we present a prototype of such a quantum network based on single atoms embedded in optical cavities. We show that atom-cavity systems form universal nodes capable of sending, receiving, storing and releasing photonic quantum information. Quantum connectivity between nodes is achieved in the conceptually most fundamental way-by the coherent exchange of a single photon. We demonstrate the faithful transfer of an atomic quantum state and the creation of entanglement between two identical nodes in separate laboratories. The non-local state that is created is manipulated by local quantum bit (qubit) rotation. This efficient cavity-based approach to quantum networking is particularly promising because it offers a clear perspective for scalability, thus paving the way towards large-scale quantum networks and their applications.     

Supercurrent reversal in quantum dots

When two superconductors are electrically connected by a weak link--such as a tunnel barrier--a zero-resistance supercurrent can flow. This supercurrent is carried by Cooper pairs of electrons with a combined charge of twice the elementary charge, e. The 2e charge quantum is clearly visible in the height of voltage steps in Josephson junctions under microwave irradiation, and in the magnetic flux periodicity of h/2e (where h is Planck's constant) in superconducting quantum interference devices. Here we study supercurrents through a quantum dot created in a semiconductor nanowire by local electrostatic gating. Owing to strong Coulomb interaction, electrons only tunnel one-by-one through the discrete energy levels of the quantum dot. This nevertheless can yield a supercurrent when subsequent tunnel events are coherent. These quantum coherent tunnelling processes can result in either a positive or a negative supercurrent, that is, in a normal or a pi-junction, respectively. We demonstrate that the supercurrent reverses sign by adding a single electron spin to the quantum dot. When excited states of the quantum dot are involved in transport, the supercurrent sign also depends on the character of the orbital wavefunctions.     

量子点中极化子的速率对光学声子平均数的影响

研究了量子点中极化子的性质.采用Tokuda改进的线性组合算符法、拉格朗日乘子法和变分法,导出了量子点中极化子的振动频率和声子平均数,讨论了在强弱耦合情况下极化子的速率对光学声子平均数的影响.研究结果表明,光学声子平均数随极化子的速率增加而增大.     

近红外高分散球形CdTe量子点合成及光学性质

以十六胺(HDA)为表面修饰剂,通过快速简单的溶剂热法制备近红外发光球形CdTe量子点。通过X线衍射仪(XRD)、傅里叶变换红外光谱仪(FT-IR)、透射电子显微镜(TEM)等表征方法对试样的形貌及结构进行研究。使用紫外-可见吸收光谱(UV-Vis)和荧光光谱(PL)研究CdTe量子点的光学性质。结果表明:制得的均匀球形CdTe量子点为立方闪锌矿结构相,具有高结晶度及高分散性,并且量子点的粒径分布较窄。随反应时间延长量子点尺寸变大,吸收峰与荧光发射峰红移,两者的斯托克位移较大,且均具有优良的近红外荧光性能。     

量子点中极化子的速率对光学声子平均数的影响

研究了量子点中极化子的性质。采用Tokuda改进的线性组合算符法、拉格朗日乘子法和变分法，导出了量子点中极化子的振动频率和声子平均数，讨论了在强弱耦合情况下极化子的速率对光学声子平均数的影响。研究结果表明，光学声子平均数随极化子的速率增加而增大。     

准对称耦合量子阱与光开关结构优化设计

根据光开关对量子阱材料的要求,提出了具体的量子阱结构优化原则。以准对称耦合量子阱为蓝本,利用此优化原则,对其结构进行优化。通过对优化后的准对称耦合量子阱电光特性的分析,发现该量子阱结构在低工作电压(F=40 kV/cm)、低吸收系数(α<100 cm-1)的情况下仍有一很大的场致折射率变化(对TE模入射光,(Δn)max=0.021 6;对TM模入射光,(Δn)max=0.033),从而验证了优化程序的正确性。     

平行双量点中的Fano-Kondo

通过么正变换得到了平行双量子点有间库仑作用时的Fano—Anderson哈密顿量,并用格林函数运动方程的方法济南市出了与实验观测量密切相关的推迟和量子分布格林函数。借助于新得到的哈密顿量和格林函数,可以研究Kondo和Fano共振的关联效应。     

量子点中电子态的能谱结构

本文研究二维三电子系统的能谱随禁闭势变化的特征，发现禁闭势很强时，能谱成为独立粒子运动谱。当禁闭势较弱时，电子之间的强关联导致了魔角动量的出现，而系统的结构主要由内禀节面决定。