A simple Fourier transform spectrometer for terahertz applications

A simple Fourier transform spectrometer was designed and constructed for the measurement of detectors,sources,passive devices and materials in the terahertz(THz) range.It can be operated at frequencies between 0.3 and 1.5 THz,using a 50-μm-thick Mylar-film beam splitter.The spectral range can be changed by altering the thickness of the beam splitter.The highest frequency resolution is 750 MHz.We studied the properties of heterodyne detectors including superconductor mixers and semiconductor harmonic mixers,direct detectors including an InSb semiconductor bolometer,superconducting tunnel junctions and the Golay cell,and sources including Gunn oscillators and a microwave source with its multipliers,as well as various materials and passive devices including Si wafers and metal mesh filters.     

Singlebeam two-photon three-dimensional optical storage in a pyrryl-substituted fulgide photochromic material

We introduce a high-density three-dimensional optical data storage approach by using a pyrryl-substituted fulgide photochromic material with a method of single-beam two-photon recording and fluorescence confocal readout. The detailed information about the photochromic material and the experimental setup are presented. The experiments about multi-layered recording and readout are carried out with a 100-μm-thick transparent photochromic material film. The results show that the lateral resolution is better than 1 μm, and the longitudinal resolution is about 3 μm. Besides, the readout times for the recorded data are desirable when using a readout laser power smaller than 5 mW.     

硅锗合金氧化层中纳米结构的量子受限分析

在硅锗合金氧化层中发现锗纳米表层结构，并分析了其时应的PL谱结构。提出相对应的量子受限模型计算公式和算法，理论分析结果与实验结果拟合较好。     

Polishing technology of surface for diamond film using the method of laser ablation

Conclusion Good unity in thickness and a smooth surface of diamond film are obtained by using the methods of laser ablation and machine grind to the surface of diamond film. Compared with the machine polishing method, the polishing rate increased by over 10 times. After laser ablation and machine polishing, the thickness change and the roughness of a diamond film with 400 μm thickness and 1 cm² area are 10–15 μm and 0.05 μm, and this film is basically suitable to using in electronics.     

Effect of thickness on structures of ultrathin diamond-like carbon films

Diamond-like carbon (DLC) films with different thickness were deposited by filtered cathode vacuum arc (FCVA). Vis-Raman and spectroscopic ellipsometry were employed to analyze the structure of DLC films. The wavelength of Vis-Raman is 514.5 nm. Experimental results show that structures of DLC films are affected by film thicknesses. When the film thickness increases from 2 to 30 nm, the G-peak position (G-pos) shifts to higher wavelength, the intensity ratio I_D/I_G and the extinction coefficient Ks decrease. It is indicated that the content of sp3 bond increases with film thickness. However, when the film thickness increases from 30 nm to 50 nm, I_D/I_G and Ks increase. The content of sp³ bonds decreases with film thickness.     

Molecular dynamics study on thermal conductivity of nanoscale thin films

A simple and effective model of heat conduction across thin films is set up and molecular dynamics simulations are implemented to explore the thermal conductivity of nanoscale thin dielectric films in the direction perpendicular to the film plane. Solid argon is selected as the model system due to its reliable experimental data and potential function. Size effects of the thermal conductivity across thin films are found by computer simulations: in a film thickness range of 2–10 nm, the conductivity values are remarkably lower than the corresponding bulk experimental data and increase as the thickness increases. The consistency between the approximate solution of the phonon Boltzmann transport equation and the simulation results ascribes the thermal conductivity size effect to the phonon scattering at film boundaries.     

(Ba,Pb)TiO3铁电薄膜的制备及其光学性质研究

采用溶胶-凝胶(Sol-Gel)技术在(100)Si及石英衬底上制备了Ba0.95Pb0.05TiO3(BPT)铁电薄膜。利用X射线衍射(XRD)、原子力显微术(AFM)对薄膜的物相结构、结晶性和表面形貌进行表征,结果表明晶化完整的BPT薄膜呈多晶钙钛矿结构,薄膜表面均匀致密.用紫外-可见分光光度计在190～1000nm波长范围内,测量了不同温度退火的BPT薄膜的光学透射率,并通过透射光谱计算了薄膜折射率和消光系数的色散关系.     

TM polarization characteristics on thermal radiation of a negative refractive index thin film

Thermal radiation TM polarization characteristics of a negative refractive index thin film was studied based on the transmit matrix method and Kirchhoff radiation law. The influence of the thin film parameters on the thermal radiation directional characteristics and spectral property were discussed. And the influence of the evanescent waves was also discussed. The results show that two factors play important roles in the thermal radiation of negative index thin film: one is the interference effect of the thin film structure to the electromagnetic waves; the other is the photon tunneling effect of the negative refractive index material, which was caused by the amplifying evanescent wave. These indicate that spectral and directional characteristics of the thermal emissivity can be modulated by modifying the structure and the physics parameters of the negative refraction index thin film. Supported by the National Natural Science Foundation of China (Grant No. 50606003) and Aeronautic Science Foundation of China (Grant No. 2007ZA51006)     

Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature

ELECTRON FIELD EMISSION IS ONE OF THE INTERESTING PER- FORMANCES OF NANO-SCALE MATERIALS [1-3]. CARBON NANO- TUBES HAVE BEEN DEMONSTRATED TO BE THE MOST FASCINAT- ING MATERIAL OF ELECTRON FIELD EMISSION, BUT THEIR INSTA- BILITY OF EMISSION DUE TO THE AGING EFFECT LIMITS THEIR APPLICATION IN VACUUM ELECTRONICS [4]. SI TIPS HAVE MORE FAVORITE GEOMETRIC FEATURE AND MORE STABLE C…     

碳涂层对硅基薄膜激光微等离子体光谱强度的影响

为了降低薄膜样品表面对激光的反射率,提高等离子体的辐射强度,改善谱线质量,提出了一种在薄膜表面涂覆碳层的方法,并研究了不同涂层厚度对等离子体谱线强度的影响.实验结果表明,薄膜表面涂覆碳层,可有效减少表面对激光束的反射,提高热耦合效率.当碳涂层厚度15 μm左右时热耦合效率最高,激光等离子体的辐射强度明显增强.     

基于反射光谱的InxGa1-xN半导体薄膜厚度测量

氮化镓薄膜是制造蓝紫光光电子器件的理想半导体材料之一。三元合金InGaN薄膜是优良的全光谱材料而且不同In组分的InGaN薄膜叠层可用于研制高效率薄膜太阳电池。精确测量InGaN薄膜的厚度有利于研制高效率的光伏器件。本文利用分光光度计实验研究了蓝宝石衬底金属有机物化学气相沉积（MOCVD）技术生长的铟镓氮（InGaN）半导体薄膜的反射光谱。基于薄膜干涉原理,计算分析了InxGa1-xN薄膜的厚度;结果发现利用反射光谱中不同波峰、波谷确定的薄膜厚度相对偏差度的平均值为4．42％。结果表明用反射光谱的方法测量InxGa1-xN薄膜的厚度是可行的。     

Growth of graphite film over the tops of vertical carbon nanotubes using Ni/Ti/Si substrate

A substrate with Ni/Ti/Si structure was used to grow vertical carbon nanotubes (CNTs) with a graphite fihn over CNT tops by thermal chemical vapor deposition with CH₄ gas as carbon source. The carbon nanotubes and the substrate were characterized by a field emission scanning electron microscope for the morphologies, a transmission electron microscope for the microstructures, a Raman spectrograph for the ctystallinity, and an Auger electron spectrometer for the depth distribution of elements. The result shows that when the thickness ratio of Ni layer to Ti layer in substrate is about 1, a graphite film with relatively good quality can be formed on the CNT tops.     

氧化生成的锗纳米结构的量子受限分析

研究了硅锗合金的氧化行为，首次发现快氧化生成的锗纳米膜复盖在氧化层上。在PL谱中，我们发现与锗纳米结构相关的一些新的谱峰。量子受限模型和新的算法被给出，较好地解释了PL谱的分布和形成机理。     

不同退火条件对纳米Ge/Al2O3相嵌薄膜中纳米Ge颗粒的氧化态影响

采用脉冲激光沉积法制备了纳米Ge/Al2O3相嵌薄膜.用X射线光电子谱(XPS)研究了薄膜的热稳定性.结果表明纳米Ge颗粒的氧化态与已经发表的结果不同,而与Si的氧化态的结果相似.用纯高斯函数拟合可以得到Ge的四种不同的氧化态,分别为:Ge 1,Ge 2,Ge 3,Ge 4.这种大的差别来自纳米Ge颗粒的不同环境的影响.在真空退火条件下,由于缺少外部氧的供给和供给速度慢,很奇妙地,在薄膜表层的Ge 2,Ge 4氧化态不如其他氧化态和未氧化态(Ge0)稳定.而在清洁的大气环境退火条件下,外部氧的供给充分和供给速度快,在薄膜表层最稳定的氧化态是Ge 4.     

Si83Ge17／Si压应变衬底上HfO2栅介质薄膜的电学性能

本文用射频磁控溅射方法在p-si83Ge17／Si压应变衬底上沉积制备Hf02栅介质薄膜,研究其后退火处理前后的电学性能,并与相同条件沉积在无应变p-Si衬底上Hf02薄膜的电学性能进行对比研究．物性测试分析结果表明,沉积Hf02薄膜为单斜相（m-Hf02）多晶薄膜,薄膜介电常数的频率依赖性较小,1MHz时薄膜介电常数k约为23．8．在相同的优化制备条件下,沉积在si83Ge17／si衬底上的Hf02薄膜电学性能明显优于沉积在Si衬底上的薄膜样品：薄膜累积态电容增加;平带电压‰骤减至-0．06V;电容．电压滞后回线明显减小;-1V栅电压下漏电流密度,减小至2．51 x 10-5A·cm-2．实验对比结果表明Si83Ge17应变层能有效地抑制Hf02与si之间的界面反应,改善HfO2／Si界面性质,从而提高薄膜的电学性能．     

磁控溅射Cu膜之Cu/SiO2/Si结构的应力

采用红外光弹测量法用磁控溅射淀积在SiO2/Si晶片表面的Cu膜在Si衬底中引入的应力。结果表明：SiO2在Si衬氏中引和张应力，而Cu在Si衬氏中引入压应力，在Cu/SiO2/Si结构中，随SiO2膜厚减小和Cu膜厚增大，Si衬底中张应力逐渐减小，最终转为压应力。同时比较、分析了理论估算值和实验结果的差异，预示和分析了Cu引线的可靠性。     

记忆合金/Si复合膜驱动性能的力学建模与仿真

在考虑记忆合金材料非线性的基础上,按照材料力学的方法联立静力学、变形几何及物理的三者关系,建立了热载荷作用下记忆合金薄膜与Si基底相互耦合作用的力学模型.通过对一个完整的热循环过程中NiTi记忆合金/Si复合膜驱动性能的模拟和讨论,结果表明,由于相变的作用,以Si为基底的记忆合金薄膜能在较窄的温度范围内产生大的驱动力及位移.通过对不同厚度比情况下复合膜最大挠度的研究发现,随着Si基底与记忆合金薄膜厚度比的增大,复合膜的最大挠度逐渐减小;当两者厚度比大于5时,本模型对记忆合金/Si复合膜驱动性能的描述和预测更精确.     

Si_（83）Ge_（17）/Si压应变衬底上HfAlO_x栅介质薄膜微结构、界面反应和介电性能研究

本文研究了射频磁控溅射沉积在p-Si83Ge17/Si（100）压应变衬底上HfAlOx栅介质薄膜的微结构及其界面反应,表征了其各项电学性能,并与相同制备条件下沉积在p-Si（100）衬底上薄膜的电学性能进行了对比研究.高分辨透射电子显微镜观测与X射线光电子能谱深度剖析表明600°C高温退火处理后,HfAlOx薄膜仍保持非晶态,但HfOx纳米微粒从薄膜中分离析出,并与扩散进入膜内的Ge,Si原子发生界面反应生成了富含Ge原子的HfSiOx和HfSix的混合界面层.相比在相同制备条件下沉积在Si（100）衬底上的薄膜样品,Si83Ge17/Si（100）衬底上薄膜的电学性能大幅提高：薄膜累积态电容增加,有效介电常数增大（～17.1）,平带电压减小,？1V栅电压下漏电流密度J减小至1.96×10？5A/cm2,但电容-电压滞后回线有所增大.Si83Ge17应变层抑制了低介电常数SiO2界面层的形成,从而改善了薄膜大部分电学性能;但混合界面层中的缺陷导致薄膜界面捕获电荷有所增加.     

Dynamical decoupling of electron spins in phosphorus-doped silicon

Quantum coherence is an important enabling feature underpinning quantum computation. However, because of couplings with its noisy surrounding environment, qubits suffer from the decoherence effects. The dynamical decoupling (DD) technique uses pulse-induced qubit flips to effectively mitigate couplings between qubits and environment. Optimal DD eliminates dephasing up to a given order with the minimum number of pulses. In this paper, we first introduce our recent work on prolonging electron spin coherence in γ-irradiated malonic acid crystals and analyze different decoherence mechanisms in this solid system. Then we focus on electron spin relaxation properties in another system, phosphorous-doped silicon (Si:P) crystals. These properties have been investigated by pulse electron paramagnetic resonance (EPR). We also investigate the performance of the dynamical decoupling technique on this system. Using 8-pulse periodic DD, the coherence time can be extended to 296 μs compared with 112 μs with one-pulse control.     

厚度对ZnS薄膜结构和应力的影响

用射频磁控溅射法在单晶Si基片上制备了4种不同厚度的ZnS膜,采用XRD和光学干涉相移法对薄膜的微结构和应力进行研究。结构分析表明,不同厚度的ZnS膜均呈多晶状态,并有明显的(220)晶面择优取向,晶体结构为立方晶型(闪锌矿)结构;随着薄膜厚度的增加,平均晶粒尺寸随之增大;薄膜的晶格常数在不同厚度下均比标准值稍大。应力分析表明,随着膜厚的增加,ZnS膜的应力差减小,在厚度为768 nm时的选区范围内应力差最小,应力分布较均匀。