A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.     

Signature of optimal doping in Hall-effect measurements on a high-temperature superconductor

High-temperature superconductivity is achieved by doping copper oxide insulators with charge carriers. The density of carriers in conducting materials can be determined from measurements of the Hall voltage--the voltage transverse to the flow of the electrical current that is proportional to an applied magnetic field. In common metals, this proportionality (the Hall coefficient) is robustly temperature independent. This is in marked contrast to the behaviour seen in high-temperature superconductors when in the 'normal' (resistive) state; the departure from expected behaviour is a key signature of the unconventional nature of the normal state, the origin of which remains a central controversy in condensed matter physics. Here we report the evolution of the low-temperature Hall coefficient in the normal state as the carrier density is increased, from the onset of superconductivity and beyond (where superconductivity has been suppressed by a magnetic field). Surprisingly, the Hall coefficient does not vary monotonically with doping but rather exhibits a sharp change at the optimal doping level for superconductivity. This observation supports the idea that two competing ground states underlie the high-temperature superconducting phase.     

Visualizing pair formation on the atomic scale in the high-Tc superconductor Bi2Sr2CaCu2O8+delta

Pairing of electrons in conventional superconductors occurs at the superconducting transition temperature T(c), creating an energy gap Delta in the electronic density of states (DOS). In the high-T(c) superconductors, a partial gap in the DOS exists for a range of temperatures above T(c) (ref. 2). A key question is whether the gap in the DOS above T(c) is associated with pairing, and what determines the temperature at which incoherent pairs form. Here we report the first spatially resolved measurements of gap formation in a high-T(c) superconductor, measured on Bi2Sr2CaCu2O8+delta samples with different T(c) values (hole concentration of 0.12 to 0.22) using scanning tunnelling microscopy. Over a wide range of doping from 0.16 to 0.22 we find that pairing gaps nucleate in nanoscale regions above T(c). These regions proliferate as the temperature is lowered, resulting in a spatial distribution of gap sizes in the superconducting state. Despite the inhomogeneity, we find that every pairing gap develops locally at a temperature T(p), following the relation 2Delta/k(B)T(p) = 7.9 +/- 0.5. At very low doping (< or =0.14), systematic changes in the DOS indicate the presence of another phenomenon, which is unrelated and perhaps competes with electron pairing. Our observation of nanometre-sized pairing regions provides the missing microscopic basis for understanding recent reports of fluctuating superconducting response above T(c) in hole-doped high-T(c) copper oxide superconductors.     

Superconductivity in doped cubic silicon

Although the local resistivity of semiconducting silicon in its standard crystalline form can be changed by many orders of magnitude by doping with elements, superconductivity has so far never been achieved. Hybrid devices combining silicon's semiconducting properties and superconductivity have therefore remained largely underdeveloped. Here we report that superconductivity can be induced when boron is locally introduced into silicon at concentrations above its equilibrium solubility. For sufficiently high boron doping (typically 100 p.p.m.) silicon becomes metallic. We find that at a higher boron concentration of several per cent, achieved by gas immersion laser doping, silicon becomes superconducting. Electrical resistivity and magnetic susceptibility measurements show that boron-doped silicon (Si:B) made in this way is a superconductor below a transition temperature T(c) approximately 0.35 K, with a critical field of about 0.4 T. Ab initio calculations, corroborated by Raman measurements, strongly suggest that doping is substitutional. The calculated electron-phonon coupling strength is found to be consistent with a conventional phonon-mediated coupling mechanism. Our findings will facilitate the fabrication of new silicon-based superconducting nanostructures and mesoscopic devices with high-quality interfaces.     

How Cooper pairs vanish approaching the Mott insulator in Bi2Sr2CaCu2O8+delta

The antiferromagnetic ground state of copper oxide Mott insulators is achieved by localizing an electron at each copper atom in real space (r-space). Removing a small fraction of these electrons (hole doping) transforms this system into a superconducting fluid of delocalized Cooper pairs in momentum space (k-space). During this transformation, two distinctive classes of electronic excitations appear. At high energies, the mysterious 'pseudogap' excitations are found, whereas, at lower energies, Bogoliubov quasi-particles-the excitations resulting from the breaking of Cooper pairs-should exist. To explore this transformation, and to identify the two excitation types, we have imaged the electronic structure of Bi(2)Sr(2)CaCu(2)O(8+delta) in r-space and k-space simultaneously. We find that although the low-energy excitations are indeed Bogoliubov quasi-particles, they occupy only a restricted region of k-space that shrinks rapidly with diminishing hole density. Concomitantly, spectral weight is transferred to higher energy r-space states that lack the characteristics of excitations from delocalized Cooper pairs. Instead, these states break translational and rotational symmetries locally at the atomic scale in an energy-independent way. We demonstrate that these unusual r-space excitations are, in fact, the pseudogap states. Thus, as the Mott insulating state is approached by decreasing the hole density, the delocalized Cooper pairs vanish from k-space, to be replaced by locally translational- and rotational-symmetry-breaking pseudogap states in r-space.     

Imaging the granular structure of high-Tc superconductivity in underdoped Bi2Sr2CaCu2O8+delta.

Granular superconductivity occurs when microscopic superconducting grains are separated by non-superconducting regions; Josephson tunnelling between the grains establishes the macroscopic superconducting state. Although crystals of the copper oxide high-transition-temperature (high-Tc) superconductors are not granular in a structural sense, theory suggests that at low levels of hole doping the holes can become concentrated at certain locations resulting in hole-rich superconducting domains. Granular superconductivity arising from tunnelling between such domains would represent a new view of the underdoped copper oxide superconductors. Here we report scanning tunnelling microscope studies of underdoped Bi2Sr2CaCu2O8+delta that reveal an apparent segregation of the electronic structure into superconducting domains that are approximately 3 nm in size (and local energy gap <50 meV), located in an electronically distinct background. We used scattering resonances at Ni impurity atoms as 'markers' for local superconductivity; no Ni resonances were detected in any region where the local energy gap Delta > 50 +/- 2.5 meV. These observations suggest that underdoped Bi2Sr2CaCu2O8+delta is a mixture of two different short-range electronic orders with the long-range characteristics of a granular superconductor.     

Fluctuating stripes at the onset of the pseudogap in the high-T(c) superconductor Bi(2)Sr(2)CaCu(2)O(8+x)

Doped Mott insulators have a strong propensity to form patterns of holes and spins often referred to as stripes. In copper oxides, doping also gives rise to the pseudogap state, which can be transformed into a high-temperature superconducting state with sufficient doping or by reducing the temperature. A long-standing issue has been the interplay between the pseudogap, which is generic to all hole-doped copper oxide superconductors, and stripes, whose static form occurs in only one family of copper oxides over a narrow range of the phase diagram. Here we report observations of the spatial reorganization of electronic states with the onset of the pseudogap state in the high-temperature superconductor Bi(2)Sr(2)CaCu(2)O(8+x), using spectroscopic mapping with a scanning tunnelling microscope. We find that the onset of the pseudogap phase coincides with the appearance of electronic patterns that have the predicted characteristics of fluctuating stripes. As expected, the stripe patterns are strongest when the hole concentration in the CuO(2) planes is close to 1/8 (per copper atom). Although they demonstrate that the fluctuating stripes emerge with the onset of the pseudogap state and occur over a large part of the phase diagram, our experiments indicate that the stripes are a consequence of pseudogap behaviour rather than its cause.     

Critical thickness for ferroelectricity in perovskite ultrathin films

The integration of ferroelectric oxide films into microelectronic devices, combined with the size reduction constraints imposed by the semiconductor industry, have revived interest in the old question concerning the possible existence of a critical thickness for ferroelectricity. Current experimental techniques have allowed the detection of ferroelectricity in perovskite films down to a thickness of 40 A (ten unit cells), ref. 3. Recent atomistic simulations have confirmed the possibility of retaining the ferroelectric ground state at ultralow thicknesses, and suggest the absence of a critical size. Here we report first-principles calculations on a realistic ferroelectric-electrode interface. We show that, contrary to current thought, BaTiO3 thin films between two metallic SrRuO3 electrodes in short circuit lose their ferroelectric properties below a critical thickness of about six unit cells (approximately 24 A). A depolarizing electrostatic field, caused by dipoles at the ferroelectric-metal interfaces, is the reason for the disappearance of the ferroelectric instability. Our results suggest the existence of a lower limit for the thickness of useful ferroelectric layers in electronic devices.     

A coherent three-dimensional Fermi surface in a high-transition-temperature superconductor

All conventional metals are known to possess a three-dimensional Fermi surface, which is the locus in reciprocal space of the long-lived electronic excitations that govern their electronic properties at low temperatures. These excitations should have well-defined momenta with components in all three dimensions. The high-transition-temperature (high-T(c)) copper oxide superconductors have unusual, highly two-dimensional properties above the superconducting transition. This, coupled with a lack of unambiguous evidence for a three-dimensional Fermi surface, has led to many new and exotic models for the underlying electronic ground state. Here we report the observation of polar angular magnetoresistance oscillations in the overdoped superconductor Tl2Ba2CuO6+delta in high magnetic fields, which firmly establishes the existence of a coherent three-dimensional Fermi surface. Analysis of the oscillations reveals that at certain symmetry points, however, this surface is strictly two-dimensional. This striking form of the Fermi surface topography, long-predicted by electronic band structure calculations, provides a natural explanation for a wide range of anisotropic properties both in the normal and superconducting states. Our data reveal that, despite their extreme electrical anisotropy, the high-T(c) materials at high doping levels can be understood within a framework of conventional three-dimensional metal physics.     

Nodal quasiparticle in pseudogapped colossal magnetoresistive manganites

A characteristic feature of the copper oxide high-temperature superconductors is the dichotomy between the electronic excitations along the nodal (diagonal) and antinodal (parallel to the Cu-O bonds) directions in momentum space, generally assumed to be linked to the 'd-wave' symmetry of the superconducting state. Angle-resolved photoemission measurements in the superconducting state have revealed a quasiparticle spectrum with a d-wave gap structure that exhibits a maximum along the antinodal direction and vanishes along the nodal direction. Subsequent measurements have shown that, at low doping levels, this gap structure persists even in the high-temperature metallic state, although the nodal points of the superconducting state spread out in finite 'Fermi arcs'. This is the so-called pseudogap phase, and it has been assumed that it is closely linked to the superconducting state, either by assigning it to fluctuating superconductivity or by invoking orders which are natural competitors of d-wave superconductors. Here we report experimental evidence that a very similar pseudogap state with a nodal-antinodal dichotomous character exists in a system that is markedly different from a superconductor: the ferromagnetic metallic groundstate of the colossal magnetoresistive bilayer manganite La1.2Sr1.8Mn2O7. Our findings therefore cast doubt on the assumption that the pseudogap state in the copper oxides and the nodal-antinodal dichotomy are hallmarks of the superconductivity state.     

Superinsulator and quantum synchronization

Synchronized oscillators are ubiquitous in nature, and synchronization plays a key part in various classical and quantum phenomena. Several experiments have shown that in thin superconducting films, disorder enforces the droplet-like electronic texture--superconducting islands immersed into a normal matrix--and that tuning disorder drives the system from superconducting to insulating behaviour. In the vicinity of the transition, a distinct state forms: a Cooper-pair insulator, with thermally activated conductivity. It results from synchronization of the phase of the superconducting order parameter at the islands across the whole system. Here we show that at a certain finite temperature, a Cooper--air insulator undergoes a transition to a superinsulating state with infinite resistance. We present experimental evidence of this transition in titanium nitride films and show that the superinsulating state is dual to the superconducting state: it is destroyed by a sufficiently strong critical magnetic field, and breaks down at some critical voltage that is analogous to the critical current in superconductors.     

Room-temperature ferroelectricity in strained SrTiO3

Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO(3), the material widely investigated for microwave devices in which the dielectric constant (epsilon(r)) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust T(c) in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase T(c) by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T(c) is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high epsilon(r) at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.     

Relaxor ferroelectricity and colossal magnetocapacitive coupling in ferromagnetic CdCr2S4

Materials in which magnetic and electric order coexist--termed 'multiferroics' or 'magnetoelectrics'--have recently become the focus of much research. In particular, the simultaneous occurrence of ferromagnetism and ferroelectricity, combined with an intimate coupling of magnetization and polarization via magnetocapacitive effects, holds promise for new generations of electronic devices. Here we present measurements on a simple cubic spinel compound with unusual, and potentially useful, magnetic and electric properties: it shows ferromagnetic order coexisting with relaxor ferroelectricity (a ferroelectric cluster state with a smeared-out phase transition), both having sizable ordering temperatures and moments. Close to the ferromagnetic ordering temperature, the magnetocapacitive coupling (characterized by a variation of the dielectric constant in an external magnetic field) reaches colossal values, approaching 500 per cent. We attribute the relaxor properties to geometric frustration, which is well known for magnetic moments but here is found to impede long-range order of the structural degrees of freedom that drive the formation of the ferroelectric state.     

强耦合超导体的热力学性质

基于Nozières-Schmitt-Rink(NSR)理论的强耦合系统,研究了高温超导体从电子预配对的形成到玻色-爱因斯坦凝聚的演变过程.首次利用NSR理论,在临界温度以上的温度区域,计算了电子熵、电子比热容等热力学量及线性比热系数,并相应地描绘出了各物理量随温度的变化曲线.由比热系数随温度的变化曲线可知,在大于临界温度时比热系数已随温度的减小而减小.这就意味着,在NSR理论框架下,强耦合系统中有赝隙现象产生.通过比热系数的变化趋势确定赝隙的存在是这篇文章得到的重要结果.     

Co-Ti共掺杂M型六角钡铁氧体磁电耦合研究

磁电多铁性材料兼具电极化及磁性，可用于构建新型传感器和高密度存储器件．但对于单相多铁性材料，大多工作温度低且所需磁场强度较高，无法满足实用化需求．近来发现六角铁氧体可明显提高这两方面特性，但还需提高其工作温度及电阻率．我们采用Co-Ti元素对M-型钡六角铁氧体进行大剂量共掺杂，制备一系列的铁氧体陶瓷BaFe12-2xCoxTixO19 (x=0~4)．同时利用物理性能综合测试仪（PPMS）及其他检测仪器搭建了一套磁电测试系统，并结合LabVIEW软件进行编程，对样品的磁性、电性、磁介电和磁电耦合特性进行系统表征．结果表明，Co-Ti共掺杂可显著改变M型钡六角铁氧体的矫顽场及饱和磁化强度．同时，这种掺杂可使漏电流降低到3个量级（掺杂量x=2）．值得一提的是，我们在掺杂量为x=2的样品中观测到室温下的磁介电效应，同时在100K以下观测到明显的磁致铁电极化，且其电极化方向可以被磁场反转．该结果在探索新型多铁六角铁氧体及推进其应用化进程具有一定的意义．     

Microscopic electronic inhomogeneity in the high-Tc superconductor Bi2Sr2CaCu2O8+x

The parent compounds of the copper oxide high-transition-temperature (high-Tc) superconductors are unusual insulators (so-called Mott insulators). Superconductivity arises when they are 'doped' away from stoichiometry. For the compound Bi2Sr2CaCu2O8+x, doping is achieved by adding extra oxygen atoms, which introduce positive charge carriers ('holes') into the CuO2 planes where the superconductivity is believed to originate. Aside from providing the charge carriers, the role of the oxygen dopants is not well understood, nor is it clear how the charge carriers are distributed on the planes. Many models of high-Tc superconductivity accordingly assume that the introduced carriers are distributed uniformly, leading to an electronically homogeneous system as in ordinary metals. Here we report the presence of an electronic inhomogeneity in Bi2Sr2CaCu2O8+x, on the basis of observations using scanning tunnelling microscopy and spectroscopy. The inhomogeneity is manifested as spatial variations in both the local density of states spectrum and the superconducting energy gap. These variations are correlated spatially and vary on the surprisingly short length scale of approximately 14 A. Our analysis suggests that this inhomogeneity is a consequence of proximity to a Mott insulator resulting in poor screening of the charge potentials associated with the oxygen ions left in the BiO plane after doping, and is indicative of the local nature of the superconducting state.     

n-type colloidal semiconductor nanocrystals

Colloidal semiconductor nanocrystals combine the physical and chemical properties of molecules with the optoelectronic properties of semiconductors. Their colour is highly controllable, a direct consequence of quantum confinement on the electronic states. Such nanocrystals are a form of 'artificial atoms' (ref. 4) that may find applications in optoelectronic systems such as light-emitting diodes and photovoltaic cells, or as components of future nanoelectronic devices. The ability to control the electron occupation (especially in n-type or p-type nanocrystals) is important for tailoring the electrical and optical properties, and should lead to a wider range of practical devices. But conventional doping by introducing impurity atoms has been unsuccessful so far: impurities tend to be expelled from the small crystalline cores (as observed for magnetic impurities), and thermal ionization of the impurities (which provides free carriers) is hindered by strong confinement. Here we report the fabrication of n-type nanocrystals using an electron transfer approach commonly employed in the field of conducting organic polymers. We find that semiconductor nanocrystals prepared as colloids can be made n-type, with electrons in quantum confined states.     

Electronic structure of the iron-based superconductor LaOFeP

The recent discovery of superconductivity in the iron oxypnictide family of compounds has generated intense interest. The layered crystal structure with transition-metal ions in planar square-lattice form and the discovery of spin-density-wave order near 130 K (refs 10, 11) seem to hint at a strong similarity with the copper oxide superconductors. An important current issue is the nature of the ground state of the parent compounds. Two distinct classes of theories, distinguished by the underlying band structure, have been put forward: a local-moment antiferromagnetic ground state in the strong-coupling approach, and an itinerant ground state in the weak-coupling approach. The first approach stresses on-site correlations, proximity to a Mott-insulating state and, thus, the resemblance to the high-transition-temperature copper oxides, whereas the second approach emphasizes the itinerant-electron physics and the interplay between the competing ferromagnetic and antiferromagnetic fluctuations. The debate over the two approaches is partly due to the lack of conclusive experimental information on the electronic structures. Here we report angle-resolved photoemission spectroscopy (ARPES) of LaOFeP (superconducting transition temperature, T(c) = 5.9 K), the first-reported iron-based superconductor. Our results favour the itinerant ground state, albeit with band renormalization. In addition, our data reveal important differences between these and copper-based superconductors.     

n型CaMnO3基氧化物热电材料研究进展

n型CaMnO3基氧化物是一种具有优异高温热电性能的n型热电材料体系,从CaMnO3基热电氧化物晶体结构、物性、电子结构、电热传输理论以及Ca位掺杂、Mn位掺杂、Ca和Mn位复合掺杂优化其电热输运性能的角度,综述了n型CaMnO3基热电氧化物的最新研究进展,给出了存在的问题和今后研究的方向.     

Superconductivity phase diagram of Na(x)CoO2*1.3H2O

The microscopic origin of superconductivity in the high-transition-temperature (high-T(c)) copper oxides remains the subject of active inquiry; several of their electronic characteristics are well established as universal to all the known materials, forming the experimental foundation that all theories must address. The most fundamental of those characteristics, for both the copper oxides and other superconductors, is the dependence of the superconducting T(c) on the degree of electronic band filling. The recent report of superconductivity near 4 K in the layered sodium cobalt oxyhydrate, Na(0.35)CoO2*1.3H2O, is of interest owing to both its triangular cobalt-oxygen lattice and its generally analogous chemical and structural relationships to the copper oxide superconductors. Here we show that the superconducting T(c) of this compound displays the same kind of behaviour on chemical doping that is observed in the high-T(c) copper oxides. Specifically, the optimal superconducting T(c) occurs in a narrow range of sodium concentrations (and therefore electron concentrations) and decreases for both underdoped and overdoped materials, as observed in the phase diagram of the copper oxide superconductors. The analogy is not perfect, however, suggesting that Na(x)CoO2*1.3H2O, with its triangular lattice geometry and special magnetic characteristics, may provide insights into systems where coupled charge and spin dynamics play an essential role in leading to superconductivity.