磁控溅射表面镀膜对Nd2Fe14B稀土永磁体抗腐蚀性能的影响

在Nd₂Fe₁₄B稀土永磁体基体表面,采用磁控溅射（直流+射频）技术制备了Ti/Ni,Ti/Al和Al/Ni等二元合金薄膜和Ti/Al/Ni三元合金薄膜。并通过中性盐雾试验、腐蚀失重计算、电化学腐蚀试验、金相观察等方式,对比研究了不同表面处理对Nd₂Fe₁₄B稀土永磁体基体抗腐蚀性能的影响,并构建了腐蚀模型。研究发现：Ti/Ni,Ti/Al和Al/Ni等二元合金薄膜和Ti/Al/Ni三元合金薄膜均有效地提高了Nd₂Fe₁₄B稀土永磁体基体耐中性盐雾腐蚀和电化学腐蚀的能力;Ti/Al/Ni三元合金薄膜较Ti/Ni,Ti/Al和Al/Ni等二元合金薄膜有更优良的综合耐腐蚀性能,其磁控溅射工艺参数为：Ar流量60 sccm,基片温度常温,Ni,Al,Ti的溅射功率都为250 W,基片转速20 r·min^-1,镀膜均速0.3 nm·s^-1,总计溅射时间1 h。     

铌铁酸铅-钛酸铅铁电陶瓷的结构相变

 通过钨锰铁矿预合成法制备了铌铁酸铅-钛酸铅(1-x)Pb(Fe_1/2Nb_1/2)O₃-xPbTiO₃ (PFN-PT)铁电陶瓷。X-ray衍射（XRD）测量和密度测试表明,1150 ℃烧结2.5 h制备的PFN-PT陶瓷呈现纯钙钛矿结构和较高的致密度。随着PbTiO₃（PT）质量含量的增加,PFN-PT的晶体结构从三方相向四方相转变,伴随着晶胞体积的减小和钙钛矿结构四方性因子（c/a）的增大。PFN-PT陶瓷呈现明显的介电频率色散现象,随着PT含量的增加,介电常数最大值温度T_m/T_C升高,介电响应从弥散、宽化的介电峰变得相对尖锐,介电损耗减小,频率色散现象减弱。MnO₂掺杂有效地改善了PFN-PT陶瓷的介电性能。w=0.25% MnO₂掺杂的0.66PFN-0.34PT陶瓷100 kHz的最大介电常数ε_m为13254,室温介电损耗tanδ为0.003 63,饱和极化强度P_s为6.18μC/cm2,矫顽场E_c为1.1 kV/mm,压电应变常量d₃₃为98pC/N。     

Dielectric properties of low dielectric constant Ba0.60Sr0.40Mg0.15Ti0.85O3-Mg2TiO4 composite thin films for tunable applications

Ba0.60Sr0.40Mg0.15Ti0.85O3-xmol%Mg2TiO4 （x = 0-40 mol%） （BSTM-MT） composite thin films were fabricated by sol-gel method. The precursor solution of these composite thin films was prepared through mixing the Ba0.80Sr0.40Mg0.15Ti0.85O3 and Mg2TiO4 solution. The microstructures and dielectric tunability of composite thin films were investigated. The dielectric constant of composite thin films can be tailored from 155 to 55 by changing the concentration of Mg2TiO4. The dielectric loss of these composite thin films were still kept below 0.01 and the tunability was above 20% at a dc-applied electric field of 500 kV/cm. Suitable dielectric constant, low dielectric loss, and high tunability of this kind of composite thin films can be useful for potential microwave tunable applications.     

Bi_(1.6)La_(0.4)Ti_2O_7薄膜的制备及性能研究

采用化学溶液沉积法在ITO基片上制备不同退火温度的掺镧钛酸铋Bi1.6La0.4Ti2O7(BLT)薄膜。研究了其结构、介电性能、漏电流密度与外加电压I-V关系曲线和光学带隙。XRD射线衍射测试结果表明,经500、550、600℃1 h退火后的薄膜的主晶相为烧绿石结构,无杂相生成,600℃时BLT薄膜衍射峰比其他两种温度的强。在1 kHz频率下测得的介电常数、损耗因子分别为114,3%;129,3%;194,6%。BLT薄膜的漏电流密度与外加电压关系曲线表明,BLT薄膜600℃的漏电流比550和500℃稍微减小。通过透射谱分析得到BLT薄膜的光学带隙几乎不受温度影响,均为3.7 eV。这些结果表明制备BLT固溶体薄膜较佳为退火温度600℃,具有较好的性能,在光电器件有良好的应用前景。     

I-V andC-V properties of TiO2 thin film by pulsed-laser reactive deposition

TiO-2 thin films have bee deposited on p-Si(111) substrates by pulsed-laser ablation of metallic Ti target in the O-3 ambient. The current-voltage and capacitance-voltage of the Al/TiO-2/Si capacitors are measured. The results show that the dielectric constant of thin film after being annealed at 700℃ is found to be 46, and the border trap density and the interface state density at the TiO-2/p-Si interface are 1.8×10 12 cm -2 and 2×10 12 eV -1·cm -2, respectively. The conduction mechanisms of as-deposited films are also discussed.     

Mn掺杂PBST薄膜的溶胶-凝胶工艺制备及介电调谐性能

采用溶胶-凝胶工艺在Pt/Ti/SiO2/Si衬底上制备了Mn掺杂的钛酸锶铅钡PBST铁电薄膜.探讨了掺杂后PBST薄膜的微观结构及其铁介电性能.实验结果表明:随着Mn的掺杂量的增加,PBST薄膜的晶化质量变好,介电常数、介电损耗和调谐量均有减小的趋势,其优值因子有显著的提高.在测定频率为1 MHz下,掺杂后的PBST薄膜介电常数和介电损耗呈下降趋势,薄膜的介电常数从未掺杂的1 250降低至掺杂后的610,同时介电损耗由0.095减小到0.033,当Mn为J4 mol％时,有最小的介电损耗0.033,虽然调谐量不是最高的,但有最大的优值因子(FOM),其微波介电综合性能有所改善.     

Dielectric properties of spinel ceramic Fe1.8V1.2O4

Spinel vanadates possess rich physics arising from the interaction among spin,orbital and lattice degrees of freedom.We report the dielectric properties of polycrystalline Fe1.8V1.2O4.A thermally activated dielectric relaxation appeared in low temperature due to the inhomogeneous conductivity between grains and grain boundaries.We found an artificial ferroelecticity in this sample.An abnormal frequency-independent dielectric peak appeared at room temperature when the samples were measured during warming in ambient air.However,this peak disappeared in the following cooling process.By dielectric frequency spectrum and equivalent circuit analysis in detail,we found the sample had a surface layer in warming but not in cooling process.We also confirmed that this surface layer was induced by the adsorption of water,which is responsible for the dielectric peak.     

Out-of-plane and In-plane piezoelectric behaviors of [Ba(Zr0.2Ti0.8)O3]–0.5(Ba0.7Ca0.3TiO3) thin films

The piezoelectric properties of [Ba(Zr_(0.2)Ti_(0.8))O_3]–0.5(Ba_(0.7)Ca_(0.3)TiO_3)(abbreviated as BZT-0.5BCT) thin films deposited on Pt/Ti/SiO_2/Si substrates are reported in the present investigation. The effect of the distances between the target and substrate(d) on the morphology and out-of-plane piezoelectric properties was investigated.The experimental results showed that the ferroelectric domains size was dependent on the distance between the substrate and target and the ferroelectric domain growth was constrained by the grains. The samples exhibited well-defined out-of-plane butterfly loops and hysteresis loops and the one with d of 6.5 cm possessed the optimal ferroelectric properties and it exhibited good in-plane piezoelectric properties.     

热处理温度对溶胶-凝胶法制备的Ce_(0.97)Co_(0.03)O_2薄膜结构和光学性能的影响

采用溶胶-凝胶法,在Si(100)衬底上制备了3%Co掺杂CeO2薄膜,研究了不同热处理温度对Ce0.97Co0.03O2薄膜结构和光学性质的影响。X射线衍射(XRD)表明,3%Co掺杂CeO2薄膜为多晶薄膜,且未破坏CeO2原有的结构,随着退火温度的升高,晶粒尺寸逐渐增大。椭偏光谱法研究表明,Ce0.97Co0.03O2薄膜的光学常数(折射率n、消光系数k)随着退火温度增加而增大,光学带隙Eg随退火温度增加而减小,这是薄膜结构随退火温度增加发生变化所致。     

High-pressure polymorph of TiO2-II from the Xiuyan crater of China

Abundant TiO2-II, a high-pressure polymorph of titanium dioxide, was found in the gneiss fragments of impact-produced breccias from the Xiuyan crater. Rutile in the gneiss was severely fragmented and fine-grained clasts less than 2 ~tm in size had been transformed to TiO2-II. Irregular thin layered TiO2-II is also observed in coarse-grained ruffle fragments, where the TiO2-II layers distributes along fractures and cracks in rutile, About 30 percent of rutile in the gneiss had been transformed to TiO2-II. Fine grains of TiO2-II display light bluish grey to light yellow brown in plane-polarized reflected light. Crystallographic investigation shows that TiO2-II has an orthorhombic structure with space group Pbcn. The cell parameters are a=4.543（1）/~, b=5.491（9）/~ and c=4.895（2） ,~. Its empirical formula calculated on the basis of two oxygen atoms can be written as （Tio.985Feo.oosNbo.oor- Si0.003Zr0.0Ol）l.0O302, or simply formula TiO2. According to the shock effects of quartz and feldspars, the peak shock pressure and post-shock temperature in the TiO2-II-bearing gneiss are estimated to be between 35 and 43 GPa and 300-900~C, respectively. The finding of TiO2-II in the shock-metamorphosed gneiss provides another mineral physics evidence for shock origin of the Xiuyan crater.     

Preparation and characterization of barium strontium titanate/silicon nanoporous pillar array composite thin films by a sol-gel method

Barium strontium titanate (Ba_0.5Sr_0.5TiO₃, BST)/silicon nanoporous pillar array (Si-NPA) thin films were prepared by a spin-coating/annealing technique based on Si-NPA with micro/nano-structure. Both the isomer conversion of acetylacetone and the network structure combined by enol and Ti-alkoxide facilitate the formation of the BST sol and the subsequent crystallization. Before the perovskite BST begins to form, the intermediate phase (Ba,Sr)Ti₂O₅CO₃ is found. The boundary between BST and Si-NPA is of clarity and little interface diffusion, disclosing that Si-NPA is an ideal template substrate in the preparation of multifunctional composite films.     

蓝宝石衬底上酞菁铜薄膜的生长及相变研究

 采用真空蒸发沉积方法在Al₂O₃衬底上生长CuPc薄膜,用X射线衍射、扫描电子显微镜、紫外-可见光分光光度计多种测试手段表征薄膜的结构,研究不同沉积速率、不同膜厚和衬底温度对CuPc薄膜结构的影响.研究结果表明：CuPc薄膜的晶粒尺寸随沉积速率的增大而减小,薄膜越厚,结晶度越高,CuPc薄膜退火温度约为250℃时发生相变,由原来的亚稳态α-CuPc晶型结构转变为稳定的β-CuPc晶型结构.
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Enhanced microwave absorption properties of rod-shaped Fe2O3/Fe3O4/ MWCNTs composites

A novel type of composite absorber,i.e.Fe_2O_3/Fe_3O_4/MWCNTs composites(0%,1.7%and 5%MWCNTs),with microwave absorption properties was successfully fabricated by a facile hydrothermal method.The preparedα-Fe_2O_3/Fe_3O_4nanoparticles displayed rod-shaped morphology.The complex permittivity and permeability of the Fe_2O_3/Fe_3O_4/MWCNTs composites distinctly increased,furthermore,with the introduction of MWCNTs,the Fe_2O_3/Fe_3O_4/MWCNTs composites exhibited fine microwave absorption performance with strong absorption and wide absorption band.In particular,for Fe_2O_3/Fe_3O_4/1.7%MWCNTs composite with an absorber thickness of 2.5 mm,the reflection loss(RL)reached a minimum of-44.1 d B at 10.4 GHz and the effective absorption bandwidth(RL-10 d B)covered 3.3 GHz.The enhanced microwave absorption performance of the Fe_2O_3/Fe_3O_4/MWCNTs composites was attributed to the high dielectric loss and improved impedance matching which was closely related to the rod-shaped morphology of Fe_2O_3,Fe_3O_4and the introduction of MWCNTs.     

Mg掺杂Ba（Zr0．25Ti0．75）O3薄膜的介电调谐性能

采用溶胶凝胶工艺,在Pt／Ti／SiO2／Si衬底制备了Mg掺杂Ba（Zr0．25Ti0．75）O3（BZT）薄膜．利用X射线衍射（XRD）和原子力显微镜（AFM）分析测定了物相微结构和薄膜表面形貌,研究了Mg掺杂含量对BZT微结构和介电调谐性能的影响．结果表明Mg掺杂BZT使薄膜表面粗糙度、晶粒尺寸、介电常量、介电损耗和调谐量都降低;5mol％Mg掺杂BZT薄膜有最大的优值因子为16．3,其介电常数、介电损耗和调谐量分别为289．5、0．016和26．8％．     

Structure and 57Fe conversion electron Mössbauer spectroscopy study of Mn-Zn ferrite nanocrystal thin films by electroless plating in aqueous solution

Mn1-xZnxFe2O4thin films with various Zn contents and of different thickness were synthesized on glass substrates directly by electroless plating in aqueous solution at 90℃ without heat treatment. The Mn-Zn ferrite films have a single spinel phase structure and well-crystallized columnar grains growing per- pendicularly to the substrates. The results of conversion electron ^57Fe Mossbauer spectroscopy （CEMS） Indicate that the cation distribution of Mn1-xZnxFe204 ferrite nanocrystal thin films fabricated by electroless plating is different from the bulk materials＇ and a great quantity of Fe^3＋ ions are still present on A sites for x〉0.5. When the Zn content of the films increases, Fe^3＋ ions in the films transfer from A sites to B sites and the hyperfine magnetic field reduces, suggesting that Zn2. has strong chemical affinity towards the A sites. On the other side, with the increase of the thickness of the films, Fe3＋ ions, at B sites in the spinel structure, increase and the array of magnetic moments no longer lies in the thin film plane completely. At x = 0.5, Hc and Ms of Mn1-xZnxFe204thin films show a minimum of 3.7 kA/m and a maximum of 419.6 kA/m, respectively.     

衬底温度对InxGa1-xN薄膜结构特性的影响

本文采用MOCVD工艺,通过调整衬底温度(固定其它工艺参数)来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)、扫描电子显微镜(SEM)和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.     

Single-negative properties of Ba2Co1.8Cu0.2Fe12O22 and Ba3Co2Fe23.4Zn0.6O41 hexagonal ferrites

The electromagnetic properties of Ba₂Co_1.8Cu_0.2Fe₁₂O₂₂ (Co₂Y) and Ba₃Co₂Fe_23.4Zn_0.6O₄₁ (Co₂Z) were studied by measuring microwave scattering parameters. In the transmission spectra of Ba₂Co_1.8Cu_0.2Fe₁₂O₂₂, a forbidden band emerges due to ferromagnetic resonance, and the permeability will turn to negative in the vicinity of the ferromagnetic resonance frequency. In the complex permittivity spectra of Ba₃Co₂Fe_23.4Zn_0.6O₄₁, the negative permittivity can be obtained due to dielectric resonance. Therefore, Co₂Y and Co₂Z can be used to construct left-handed materials possessing negative permeability and negative permittivity simultaneously.     

Structural and magnetic properties of ZnFe2O4 films deposited by low sputtering power

To validate the correctness of the Hartman-Perdok Theory (HPT), which indicates that the {111} planes have the lowest surface energy in spinel ferrites, the {111} plane orientated ZnFe₂O₄ thin films on Si(100), Si(111), and SiO₂(500 nm)/Si(111) substrates were obtained through a radio frequency (RF) magnetron sputtering method with a low sputtering power of 80 W. All of the experiments prove that the atom energy determined by sputtering power plays an important role in the orientated growth of the ZnFe₂O₄ thin films, and it matches well with HPT. The ZnFe₂O₄ thin films exhibit ferromagnetism with a magnetization of 84.25 kJ/mol at room temperature, which is different from the bulk counterpart (antiferromagnetic as usual). The ZnFe₂O₄ thin films can be used as high-quality oriented inducing buffer layers for other spinel (Ni, Mn)Zn ferrite thin films and may have high potential in magnetic thin films-based devices.     

Research on effects of hydrostatic pressure on the dielectric property of Pb(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3−</Subscript>BaTiO<Subscript>3−</Subscript> PbTiO<Subscript>3</Subscript> relaxor ferroelectric ceramics

The dielectric properties of Pb(Zn1_1/3Nb_2/3)O₃₋ BaTiO₃₋PbTiO₃ relaxor ferroelectric ceramics near the rhombohedral and tetragonal phase boundary were investigated under hydrostatic pressure. It was found that hydrostatic pressure made their phase transition temperature T _c and the peak temperature T _m decreased, and the frequency dispersion and relaxor behavior enhanced. In these disorder systems of composite pervoskite structures, there appeared polar clusters or nanodomains. The unique physical characteristics, which made the relaxor behavior enhanced, is that the correlation length among these nanodomains decreases greatly with the pressure increasing.     

化学计量对Ba1-xSrxTiO3薄膜介电性能的影响

采用脉冲激光沉积法，在Pt／Ti／SiO2／Si衬底上制备了Ba1-xSrxTiO3薄膜，通过改变Sr化学计量，研究了其介电性质．实验结果发现：随着Sr化学计量的增加，薄膜的介电系数明显增大，而损耗仍然保持在较低的水平．研究表明：薄膜介电系数的增大是由于薄膜中颗粒尺寸的减小，导致了居里温度的降低．另外，C-V特性研究发现：随着Sr化学计量的增加，薄膜的电容调谐度也有所提高．