电子回旋共振加热系统中功率监测用高速高精度放大器的设计

设计了高速高精度低噪声放大器用于磁约束核聚变中电子回旋共振加热系统中入射和反射功率的实时监测。提出了模块化的高速高精度放大器设计方案。给出了放大器的稳定性、响应速度、噪声、失调等特性的分析方法和仿真方法。基于Labview构建了放大器自动测试系统,测试了实际放大器的响应速度和精度并对实际测量结果给出分析。在常用配置(三级放大器放大倍数分别为10~20倍、30~50倍、2~20倍)情况下,级联放大器的响应时间小于10μs,等效输入噪声电压小于60μV,等效输入失调电压最大不超过32μV。放大器的性能、稳定性和可靠性在电子回旋实验中得到了验证。     

HL-2A装置中的电子回旋波电流驱动

 通过将相对论Fokker Planck方程与波迹方程联合求解,对HL-2A装置中的电子回旋波电流驱动进行了数值模拟,研究了在HL-2A单零偏滤器条件下,中平面弱场侧发射的电子回旋波寻常波电流驱动。结果表明,HL-2A中的电子回旋波电流驱动效率较低并且受温度影响较为明显。     

电子回旋共振等离子体特性的数值模拟

以电子作为流体、离子作为粒子这一混合模型，研究了电子回旋共振（ＥＣＲ）等离子体微波放电的热现象及离子沿偏离轴向磁力线的输运．结果表明气压对ＥＣＲ等离子体影响很大     

电子回旋共振等离子体特性的数值模拟

以电子作为流体，离子作为粒子这一混合模型，研究了电子回旋共振等离子体微波放电的热现象及离子沿偏离轴向磁力线的输运。结果表明气压对ＥＣＲ等离子体影响很大。     

电子回旋共振（ECR）离子源的研制

介绍了一种电子回旋共振离子源的设计和结构，为了获得了长寿命，高等离子密度以及高效传输微波功率，作者通过实验研究发现，利用合适的微波输入三层复合 很有 ，而且采用两个囊 磁轭的螺线和线圈能够产生满足共振条件。     

电子元器件热输运方法研究

随着科技日新月异的发展,电子元器件高频、高速、高集成化的要求及高温的工作环境势必会影响电子元器件的性能,这就要求对其进行更加高效的热控制来满足其要求。因此有效解决电子元器件的散热问题已成为当前电子元器件和电子设备制造的关键技术。本文对电子元器件热输运方法进行了综合的阐述和适当分析,并对热输运的设计进行预期展望。     

电子回旋共振（ECR）等离子体技术在材料科学中的应用

电子回旋共振（ＥＣＲ）微波放电等离子体是当今大规模和超大规模集成电路制作中的高新技术．它具有大面积均匀，高密度，低电位的等离子体，是沉积各种薄膜和刻蚀的重要工具．本文简要评述了ＥＣＲ等离子体在材料科学中进行沉积镀膜和刻蚀的情况，简介了ＥＣＲ等离子体发生器的装置工作原理．     

微波等离子体电子回旋共振放电粒子模拟分析

电子回旋共振放电产生的等离子体在微电子工业中材料加工、空间电推进方面有着广泛的应用。为了研究微波等离子体电子回旋共振的放电特性,使电子回旋共振放电产生的等离子体密度和能量转换效率更高,建立了微波等离子体电子回旋共振放电的1D3V模型,描述了带电粒子在外加静磁场、微波场共同作用下的微观运动。结果表明:微波频率为2.45 GHz时,随着静磁场磁感应强度的增加,平均电子能量先持续增大达到峰值,随后又不断地减小,且在0.087 5 T时电子加速效果最明显,结果符合电子的回旋频率公式,验证了该模型的正确性;共振区域内,发现在0.087 5 T磁感应强度下,微波频率为2.45 GHz下拟合的电子速度分布才与微波电场分布趋势相似,说明微波电场推动了电子运动。这为进一步研究微波等离子体放电的粒子模拟-蒙特卡罗碰撞模拟奠定了基础,也为进一步研究微波等离子体源中粒子产生效率及微波等离子体源的物理性质提供了重要参考。     

能量可变的回旋加速器引出束流输运系统设计

设计了100MeV回旋加速器引出质子的输运系统,其能量可变范围为70～100MeV．在该设计中,为了将从负氢回旋加速器引出的质子束传输到实验室和厂房,对输运线元件选用、物理参数匹配计算等问题进行了探讨,其中主要包括引出段、周期场和输出段3个部分的设计．对引出段的设计中,使其适用于不同能量不同初始束流的各种情况;在周期场的设计中,使其在不同能量中均实现腰腰传输;在输出段的设计中,为了满足民用束流的高强度要求和实验用束流的高品质要求,分别采用了消色散和增大色散降低流强的方法．该系统能满足能量在70～100MeV时质子的传输要求．     

Electronic transport in nanometre-scale silicon-on-insulator membranes

The widely used 'silicon-on-insulator' (SOI) system consists of a layer of single-crystalline silicon supported on a silicon dioxide substrate. When this silicon layer (the template layer) is very thin, the assumption that an effectively infinite number of atoms contributes to its physical properties no longer applies, and new electronic, mechanical and thermodynamic phenomena arise, distinct from those of bulk silicon. The development of unusual electronic properties with decreasing layer thickness is particularly important for silicon microelectronic devices, in which (001)-oriented SOI is often used. Here we show--using scanning tunnelling microscopy, electronic transport measurements, and theory--that electronic conduction in thin SOI(001) is determined not by bulk dopants but by the interaction of surface or interface electronic energy levels with the 'bulk' band structure of the thin silicon template layer. This interaction enables high-mobility carrier conduction in nanometre-scale SOI; conduction in even the thinnest membranes or layers of Si(001) is therefore possible, independent of any considerations of bulk doping, provided that the proper surface or interface states are available to enable the thermal excitation of 'bulk' carriers in the silicon layer.     

有机分子电子输运性质的研究

利用从头计算理论和弹性散射格林函数的方法,对有机分子1,4-苯二硫酚（benzene-1,4-dithiol）和对苯二甲氰（1,4-phenylene diisocyanide）的电子输运性质进行了理论研究．结果显示两种分子都具有电导的平台效应和电流的线性响应,但分子与电极的耦合程度不同,电流的开启位置和电导平台的宽度与高度也有明显的区别．     

Electronic measurement and control of spin transport in silicon

The spin lifetime and diffusion length of electrons are transport parameters that define the scale of coherence in spintronic devices and circuits. As these parameters are many orders of magnitude larger in semiconductors than in metals, semiconductors could be the most suitable for spintronics. So far, spin transport has only been measured in direct-bandgap semiconductors or in combination with magnetic semiconductors, excluding a wide range of non-magnetic semiconductors with indirect bandgaps. Most notable in this group is silicon, Si, which (in addition to its market entrenchment in electronics) has long been predicted a superior semiconductor for spintronics with enhanced lifetime and transport length due to low spin-orbit scattering and lattice inversion symmetry. Despite this promise, a demonstration of coherent spin transport in Si has remained elusive, because most experiments focused on magnetoresistive devices; these methods fail because of a fundamental impedance mismatch between ferromagnetic metal and semiconductor, and measurements are obscured by other magnetoelectronic effects. Here we demonstrate conduction-band spin transport across 10 mum undoped Si in a device that operates by spin-dependent ballistic hot-electron filtering through ferromagnetic thin films for both spin injection and spin detection. As it is not based on magnetoresistance, the hot-electron spin injection and spin detection avoids impedance mismatch issues and prevents interference from parasitic effects. The clean collector current shows independent magnetic and electrical control of spin precession, and thus confirms spin coherent drift in the conduction band of silicon.     

激光等离子体中电子热输运现象的数值模拟

利用Fokker-Planck模拟并结合我们的数值模拟研究工作,对激光等离子体中电子非局域热输运现象进行了模拟计算与讨论.简要介绍了电子的非局域热输运的基本特性以及激光加热过程中温度烧蚀前沿稠密等离子体子区的预热效应、临界面附近的限流效应,以及冕区的反扩散与限流效应.结合Fokker-Planck模拟与相应流体模拟对比研究,探讨了限流因子的取值以及高强度激光作用下局域限流模型的局限性.     

拓扑绝缘体与低维超导体的电输运特性

拓扑绝缘体这种具有新奇量子特性的物质和具有百余年研究历史的超导体都是当前凝聚态物理学领域的研究热点．本文简要介绍了拓扑绝缘体、超导体的研究背景和基本特性,重点回顾了拓扑绝缘体、超导薄膜及纳米桥、超导纳米线以及纳米尺度下拓扑绝缘体．超导异质结构的电输运特性．并对该领域的进一步发展做出了展望．     

In-Sn20合金熔体电输运性质的研究

文章以直流四电极法和微差法分别测量了In-Sn20合金熔体的电导率σ和热电势S随温度的变化,并对不同温度下的熔体进行了X射线衍射实验。结果表明,合金熔体的电导率和热电势均在远高于液相线几百度的温区内发生了突变,且2种电子输运性质的突变温度一致,表明合金熔体在升温过程中可能发生了某种结构转变。利用Fiber-Ziman理论及赝势模型,计算并分析了合金熔体的电子状态密度N(EF)及其随能量的变化率dN(EF)/dE,发现N(EF)和dN(EF)/dE在一定温度范围内也随温度发生了突变。     

Synergistically optimizing electrical and thermal transport properties of ntype PbSe

In this paper,we report that the thermoelectric performance of n-type Pb Se could be improved through synergistically optimizing electrical and thermal transport properties via Sb doping and Mg alloying.The carrier concentration was firstly optimized through Sb doping,resulting in a maximum power factor of~15.4μW cm~(-1)K~(-2)and maximum ZT of~0.9 at 873 K in Pb_(0.99)Sb_(0.01)Se.Then,Mg was selected for alloying in Pb sites to produce point defects,which can largely intensify the phonon scattering and lower thermal conductivity.After Mg alloying,the thermal conductivity at 300 K(873 K)was significantly suppressed from~4.6 Wm~(-1)K~(-1)(1.5 Wm~(-1)K~(-1))for Pb_(0.99)Sb_(0.01)Se to~2.9 Wm~(-1)K~(-1)(1.1 Wm~(-1)K~(-1))for Pb_(0.99)Sb_(0.01)Se-6%Mg Se.Through combining Sb doping and Mg alloying,a maximum ZT of~1.1 was achieved at 873 K for Pb_(0.99)Sb_(0.01)Se-6%Mg Se,and the average ZT(ZT_(ave))was increased by 28.6%from~0.42 for Pb_(0.99)Sb_(0.01)Se to~0.54 for Pb_(0.99)Sb_(0.01)Se-6%Mg Se.The results indicate that Pb Se is a robust candidate for medium-temperature thermoelectric applications.     

基于电子鼻技术的化学热处理气氛测控

采用气体传感器阵列和虚拟仪器(VI)软件Labview构成的电子鼻系统，对化学热处理过程进行炉外软测量与控制，有效地解决了在渗碳等高温环境下，氧探头等传感器使用不便、寿命较短的问题．虚拟仪器软件内嵌入数据处理功能强大的Matlab软件包，彻底摆脱了根据气体成分和化学平衡方程计算碳势、氮势的传统数学模型，建立起以动力学特征提取为基础的神经网络识别模型．灵活的动态模型辨识与仿真机制，虚拟仪器特有的功能重定义特点使其更有广泛的适应性．这种方法完全不改变原有炉体结构，只是在炉外附加测量系统，使旧设备改造方便快捷．     

Microstructural evolution and thermal conductivity of diamond/Al composites during thermal cycling

The microstructural evolution and performance of diamond/Al composites during thermal cycling has rarely been investigated. In the present work, the thermal stability of diamond/Al composites during thermal cycling for up to 200 cycles was explored. Specifically, the thermal conductivity(λ) of the composites was measured and scanning electron microscopy of specific areas in the same samples was carried out to achieve quasi-in situ observations. The interface between the(100) plane of diamond and the Al matrix was well bonded with a zigzag morphology and abundant needle-like Al_4C_3 phases. By contrast, the interface between the(111) plane of diamond and the Al matrix showed weak bonding and debonded during thermal cycling. The debonding length increased rapidly over the first 100 thermal cycles and then increased slowly in the following 100 cycles. The λ of the diamond/Al composites decreased abruptly over the initial 20 cycles, increased afterward, and then decreased monotonously once more with increasing number of thermal cycles. Decreases in the λ of the Al matrix and the corresponding stress concentration at the diamond/Al interface caused by thermal mismatch, rather than interfacial debonding, may be the main factors influencing the decrease in λ of the diamond/Al composites, especially in the initial stages of thermal cycling.